1N4150(DO 35)

WILLAS
FM120-M+
THRU
1N4150
200mA SMALL SIGNAL SWITCHING DIODE - 50V
1.0A SURFACE MOUNT SCHOTTKY
BARRIER
RECTIFIERS -20V- 200V
DO-35
PACKAGE
SOD-123+ PACKAGE
FM1200-M+
Pb Free Product
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
1N4150 SIGNAL DIODE
• Guardring for overvoltage protection.
• Ultra high-speed switching.
Dimensions (DO-35 )
Absolute Maximum Ratings (Ta=25°C)
• Silicon epitaxial planar chip, metal silicon junction.
Items
Symbol
Ratings
Unit
• Lead-free parts meet environmental standards of
Reverse
Voltage /228 VR
50
V
MIL-STD-19500
Reverse
trrcode suffix "G"
4
ns
product for packing
• RoHSRecovery
TimeHalogen free product for packing code suffix "H"
Power
Dissipation data
P
500
mW
Mechanical
3.33mW /°C (25°C)
• Epoxy : UL94-V0 rated flame retardant
Forward Current
IF
200
mA
: Molded plastic,Tj
SOD-123H
• CaseTemp.
Junction
-55 to 150 °C
,
Operating/Storage
• Terminals :Plated terminals,
Tstg solderable
-55 to 150per MIL-STD-750
°C
0.146(3.7)
0.130(3.3)
0.071(1.8)
0.056(1.4)
.022(0.55)
.018(0.45)
1.02(26.0)
MIN.
0.040(1.0)
0.024(0.6)
.153(3.6)Typ.
0.031(0.8)
.132(3.0)
0.031(0.8) Typ.
Method 2026
.087(2.2)
Mechanical
• Polarity :Data
Indicated by cathode band
.067(1.7)
Dimensions in inches and (millimeters)
Items
Materials
1.02(26.0)
: Any
• Mounting Position
MIN.
Package
DO-35
•
Weight
:
Approximated
0.011
gram
Case
Hermetically sealed glass
Lead/Finish
Double stud/Solder Plating
Chip
Glass Passivated
MAXIMUM
RATINGS AND ELECTRICAL CHARACTERISTICS
Moisture Sensitivity Level 1
Ratings
Dimensions in millimeters
Polarity: Color band denotes cathode end
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For
capacitive load,
derate current by
20%
Electrical
Characteristics
(Ta=25°C)
Breakdown
Marking
Code
0.012(0.3) Typ.
Symbol
Ratings
FM150-MH FM160-MH
FM180-MH FM1100-MHUnit
FM1150-MH FM1200-MH UNIT
SYMBOL FM120-MH FM130-MH FM140-MH
RATINGS
Voltage
IR=Recurrent
5.0uA Peak Reverse Voltage
Maximum
VRRM
Peak
Forward
Surge
Current
PW
=
1sec.
Maximum RMS Voltage
VRMS
Maximum Forward Voltage
Maximum DC Blocking Voltage
VDC
IF= 200mA
Maximum
AverageReverse
Forward Rectified
Current
IO
Maximum
Current
VR= 50V
Peak Forward Surge Current 8.3 ms single half sine-wave
IFSM
VR= 20V, Tj= 150°C
superimposed on rated load (JEDEC method)
Maximum Junction Capacitance
TypicalVR=
Thermal
Resistance
RΘJA
0, f=
1 MHz(Note 2)
Typical
Junction
Capacitance
(Note
1)
CJ
Max Reverse Recovery Time
IF=Temperature
-IR= 10-200mA,
Operating
Range to 0.1 IF
TJ
Storage Temperature Range
12
20
14BV
40
13
30
14
21
20
30
15
50
16
60
IFsurge
28
35
VF
40
50
Cj
-55 to +125
42
60
80
1.0
10
100
70
100
1.0
0.10
30100
IR
18
50 80
1.0 56
402.5
120
trr
4
V 115
150
A 105
V
150
120
200
Volts
140
Volts
200
Volts
Amps
uA
Amps
-55 to +150
pF
℃/W
PF
ns
℃
- 65 to +175
TSTG
℃
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.50
0.70
0.85
0.9
0.5
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2010-03
WILLAS ELECTRONIC CORP.
0.92
Volts
mAmps
WILLAS
FM120-M+
THRU
1N4150
FM1200-M+
200mA SMALL SIGNAL SWITCHING DIODE - 50V
1.0A SURFACE MOUNT SCHOTTKY
BARRIER
RECTIFIERS -20V- 200V
DO-35
PACKAGE
Pb Free Product
SOD-123+ PACKAGE
Package
Electrical characteristic curves (Ta = 25°C unless specified otherwise)
Features
outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Marking Code
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
14
40
15
50
16
60
18
80
10
100
115
150
120
200
Volts
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140
Volts
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
Volts
Maximum Average Forward Rectified Current
IO
IFSM
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Storage Temperature Range
1.0
30
40
120
-55 to +125
Amps
Amps
℃/W
PF
-55 to +150
℃
- 65 to +175
TSTG
℃
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
2010-03
@T A=125℃
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
IR
0.50
0.70
0.85
0.9
0.5
10
WILLAS
ELECTRONIC CORP.
0.92
Volts
mAmps
WILLAS
FM120-M+
1N4150
200mA SMALL SIGNAL SWITCHING DIODE - 50V
1.0A SURFACE MOUNT SCHOTTKY
BARRIER
RECTIFIERS -20V- 200V
DO-35
PACKAGE
SOD-123+ PACKAGE
THRU
FM1200-M+
Pb Free Product
Package outline
Features
design, excellent power dissipation offers
• Batch process
Ordering
Information:
better reverse leakage current and thermal resistance.
Device PN mounted application in order to
• Low profile surface
optimize board space.
(1) (2)
SOD-123H
Packing Tape & Ammo Pack box:5Kpcs/box 0.146(3.7)
1N4150‐F
G ‐WS loss, high efficiency.
• Low power
0.130(3.3)
Note: (1)
Packing code, Tape & Ammo Pack box
capability, low forward voltage drop.
• High current
• High surge capability.
(2) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” for overvoltage protection.
• Guardring
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per
MIL-STD-750
***Disclaimer***
Method 2026
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
WILLAS reserves the right to make changes without notice to any product Dimensions in inches and (millimeters)
• Polarity : Indicated by cathode band
specification herein, to make corrections, modifications, enhancements or other • Mounting Position : Any
• changes. WILLAS or anyone on its behalf assumes no responsibility or liability Weight : Approximated 0.011 gram
for any errors or inaccuracies. Data sheet specifications and its information MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at
25℃
ambient temperature unless otherwise specified.
contained are intended to provide a product description only. "Typical" parameters Single phase half wave, 60Hz, resistive of inductive load.
which may be included on WILLAS data sheets and/ or specifications can For capacitive load, derate current by 20%
and do vary in different applications and actual performance may vary over time. SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
RATINGS
Marking Code
12
13
14
15
16
18
10
115
120
WILLAS does not assume any liability arising out of the application or 20
30
40
50
60
80
100
150
200
Maximum Recurrent Peak Reverse Voltage
Vo
VRRM
Vo
14
21
28
35
42
56
70
105
140
Maximumuse of any product or circuit. RMS Voltage
VRMS
Vo
Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
Am
Maximum Average Forward Rectified Current
IO
1.0
WILLAS products are not designed, intended or authorized for use in medical, Peak Forward Surge Current 8.3 ms single half sine-wave
30
IFSM
Am
life‐saving implant or other applications intended for life‐sustaining or other related superimposed on rated load (JEDEC method)
applications where a failure or malfunction of component or circuitry may directly ℃
40
Typical Thermal
Resistance (Note 2)
RΘJA
P
120
Typical Junction Capacitance (Note 1)
C
J
or indirectly cause injury or threaten a life without expressed written approval -55 to +125
-55 to +150
Operating Temperature Range
TJ
℃
of WILLAS. Customers using or selling WILLAS components for use in - 65 to +175
Storage Temperature
Range
TSTG
℃
such applications do so at their own risk and shall agree to fully indemnify WILLAS CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
. 0.85
Vo
0.9
MaximumInc and its subsidiaries harmless against all claims, damages and expenditures
Forward Voltage at 1.0A DC
0.92
VF
0.50
0.70
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.5
10
mA
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2010-03
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
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