1N4151(DO 35)

WILLAS
FM120-M+
THRU
1N4151
300mA SMALL SIGNAL SWITCHING DIODE - 50V
1.0A SURFACE MOUNT SCHOTTKY
BARRIER
RECTIFIERS -20V- 200V
DO-35
PACKAGE
SOD-123+ PACKAGE
FM1200-M+
Pb Free Product
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
1N4151 SIGNAL DIODE
optimize board space.
• Low power loss, high efficiency.
capability,
low forward
voltage
• High current
Absolute
Maximum
Ratings
(Ta=25
°C) drop.
High
surge
capability.
•
Items
Symbol Ratings Unit
• Guardring for overvoltage protection.
Reverse Voltage
VR
50
V
• Ultra high-speed switching.
Reverse
Recovery
trr
2
ns
• Silicon epitaxial planar chip, metal silicon junction.
Time
• Lead-free parts meet environmental standards of
MIL-STD-19500
Power
Dissipation/228 P
500
mW
for
packing
code
suffix
"G"
• RoHS product
3.33mW/
C
(25
C)
°
°
Halogen Current
free product for packing
suffix "H" mA
Forward
IF code 300
Mechanical
data
Junction Temp.
Tj
-55 to 150 °C
flame retardant
• Epoxy : UL94-V0 rated Tstg
-55 to 150 °C
Operating/Storage
• Case : Molded plastic, SOD-123H
,
Mechanical
Data terminals, solderable per MIL-STD-750
• Terminals :Plated
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
Dimensions (DO-35)
.022(0.55)
.018(0.45)
0.071(1.8)
0.056(1.4)
1.02(26.0)
MIN.
.153(3.6)
.132(3.0)
0.040(1.0)
0.024(0.6)
.087(2.2)
0.031(0.8) Typ.
0.031(0.8) Typ.
.067(1.7)
Items
Materials
Method
2026
Package
DO-35by cathode band
• Polarity : Indicated
Case
Hermetically sealed glass
• Mounting Position : Any
Lead/Finish Double stud/Solder Plating
• Weight : Approximated
0.011 gram
Chip
Glass Passivated
1.02(26.0)
MIN.
Dimensions in inches and (millimeters)
Dime nsions in mi llime ters
Moisture Sensitivity Level 1
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Polarity: Color band denotes cathode end
Ratings at 25℃ ambient temperature unless otherwise specified.
Characteristics
°C) load.
SingleElectrical
phase half wave,
60Hz, resistive(Ta=25
of inductive
Ratings
For capacitive load, derate current by 20%
Symbol
Ratings
Unit
Breakdown Voltage
BVFM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH
V
SYMBOL FM120-MH FM130-MH FM140-MH
FM1200-MH UNIT
RATINGS
IR= 5.0uA
75
Marking Code
12
13
14
15
16
18
10
115
120
Peak
Forward
Surge Current
IFsurge50
1.0 80
A 150
20
30
40
60
100
200
Maximum
Recurrent
Peak Reverse
Voltage PW= 1sec.
Volts
VRRM
Maximum
Forward
Voltage
VF
V
Volts
14
21
28
35
42
56
70
105
140
Maximum RMS Voltage
VRMS
IF= 50mA
1.0 80
Volts
Maximum DC Blocking Voltage
20
30
40
50
60
100
150
200
VDC
Maximum Reverse Current
IR
uA
Amps
Maximum Average Forward Rectified Current
IO
1.0
VR= 50V
0.050
VR=
20V,
Tj=8.3
150
C half sine-wave IFSM
50
Peak Forward
Surge
Current
ms°single
30
Amps
superimposed
on ratedJunction
load (JEDEC
method)
Maximum
Capacitance
Cj
pF
℃/W
VR= Resistance
0, f= 1 MHz
40 2
Typical Thermal
(Note 2)
RΘJA
PF
120
Max Reverse
Recovery
trr
ns
Typical Junction
Capacitance
(Note 1) Time
CJ
-55
to
+125
-55
to
+150
10mA, Range
VR= 6V, IRR= 1mA, RL= 100
2
Operating IF=
Temperature
TJ Ω
℃
Storage Temperature Range
- 65 to +175
TSTG
℃
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.50
0.70
0.85
0.5
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2010-03
WILLAS ELECTRONIC CORP.
0.9
0.92
Volts
mAmps
WILLAS
FM120-M+
THRU
1N4151
300mA SMALL SIGNAL SWITCHING DIODE - 50V
1.0A SURFACE MOUNT SCHOTTKY
BARRIER
RECTIFIERS -20V- 200V
DO-35
PACKAGE
SOD-123+ PACKAGE
FM1200-M+
Pb Free Product
Package outline
FeaturesRITING AND CHARACTERISTIC CURVES (1N4151)
• Batch process design, excellent power dissipation offers
betterElectrical
reverse characteristic
leakage current
and(Ta
thermal
curves
= 25°Cresistance.
unless specified otherwise)
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Marking Code
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
14
40
15
50
16
60
18
80
10
100
115
150
120
200
Volts
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140
Volts
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
Volts
IO
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
IFSM
RΘJA
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Storage Temperature Range
1.0
30
40
120
-55 to +125
Amps
Amps
℃/W
PF
-55 to +150
℃
- 65 to +175
TSTG
℃
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VF
Maximum Forward Voltage at 1.0A DC
Maximum
Average Reverse Current at @T A=25℃
2010-03
Rated DC Blocking Voltage
@T A=125℃
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
IR
0.50
0.70
0.85
WILLAS0.5
ELECTRONIC
10
0.9
CORP.
0.92
Volts
mAmps
WILLAS
FM120-M+
1N4151
300mA SMALL SIGNAL SWITCHING DIODE - 50V
1.0A SURFACE MOUNT SCHOTTKY
BARRIER
RECTIFIERS
-20V- 200V
DO-35
PACKAGE
SOD-123+ PACKAGE
THRU
FM1200-M+
Pb Free Product
Package outline
Features
design, excellent
• Batch process
Ordering
Information:
power dissipation offers
better reverse leakage current and thermal resistance.
Device PN mounted application in order to
• Low profile surface
optimize board space.
(1) (2)
SOD-123H
Packing Tape & Ammo Pack box:5Kpcs/box 0.146(3.7)
1N4151‐F
G ‐WS loss, high efficiency.
• Low power
0.130(3.3)
High
current
capability,
low forward voltage drop.
•
Note: (1) Packing code, Tape & Ammo Pack box
• High surge capability.
(2) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” for overvoltage protection.
• Guardring
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per
MIL-STD-750
***Disclaimer***
Method 2026
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
WILLAS reserves the right to make changes without notice to any product Dimensions in inches and (millimeters)
• Polarity
: Indicated by cathode band
Mounting Position : Any
•specification herein, to make corrections, modifications, enhancements or other •changes. WILLAS or anyone on its behalf assumes no responsibility or liability Weight : Approximated 0.011 gram
for any errors or inaccuracies. Data sheet specifications and its information MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratingscontained are intended to provide a product description only. "Typical" parameters at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
which may be included on WILLAS data sheets and/ or specifications can For capacitive load, derate current by 20%
and do vary in different applications and actual performance may vary over time. SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
RATINGS
Marking Code
12
13
14
15
16
18
10
115
120
WILLAS does not assume any liability arising out of the application or 20
30
40
50
60
80
100
150
200
Maximum Recurrent Peak Reverse Voltage
V
VRRM
V
14
21
28
35
42
56
70
105
140
Maximumuse of any product or circuit. RMS Voltage
VRMS
V
Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
A
Maximum Average Forward Rectified Current
IO
1.0
WILLAS products are not designed, intended or authorized for use in medical, Peak Forward Surge Current 8.3 ms single half sine-wave
30
IFSM
A
life‐saving implant or other applications intended for life‐sustaining or other related superimposed on rated load (JEDEC method)
℃
applications where a failure or malfunction of component or circuitry may directly 40
Typical Thermal
Resistance (Note 2)
RΘJA
120
Typical Junction Capacitance (Note 1)
CJ
or indirectly cause injury or threaten a life without expressed written approval -55 to +125
-55 to +150
Operating Temperature Range
TJ
of WILLAS. Customers using or selling WILLAS components for use in - 65 to +175
Storage Temperature
Range
TSTG
such applications do so at their own risk and shall agree to fully indemnify WILLAS CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
V
0.9
MaximumInc and its subsidiaries harmless against all claims, damages and expenditures
Forward Voltage at 1.0A DC
. 0.85
0.92
VF
0.50
0.70
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.5
10
m
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2010-03
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
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