BUP 302 IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 Pin 2 G Type VCE IC BUP 302 1000V 12A Pin 3 C E Package Ordering Code TO-218 AB Q67078-A4205-A2 Maximum Ratings Parameter Symbol Collector-emitter voltage VCE Collector-gate voltage VCGR RGE = 20 kΩ Values Unit 1000 V 1000 Gate-emitter voltage VGE DC collector current IC ± 20 A TC = 25 °C 12 TC = 90 °C 8 Pulsed collector current, tp = 1 ms ICpuls TC = 25 °C 24 TC = 90 °C 16 EAS Avalanche energy, single pulse mJ IC = 5 A, VCC = 24 V, RGE = 25 Ω L = 3.3 mH, Tj = 25 °C 10 Ptot Power dissipation TC = 25 °C W 125 Chip or operating temperature Tj -55 ... + 150 Storage temperature Tstg -55 ... + 150 Semiconductor Group 1 °C Jul-30-1996 BUP 302 Maximum Ratings Parameter Symbol DIN humidity category, DIN 40 040 - IEC climatic category, DIN IEC 68-1 - Values Unit E - 55 / 150 / 56 Thermal Resistance ≤1 RthJC Thermal resistance, chip case K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Gate threshold voltage VGE(th) VGE = VCE, IC = 0.3 mA V 4.5 5.5 6.5 VGE = 15 V, IC = 5 A, Tj = 25 °C - 2.8 3.3 VGE = 15 V, IC = 5 A, Tj = 125 °C - 3.8 4.3 VGE = 15 V, IC = 5 A, Tj = 150 °C - 4 4.5 Collector-emitter saturation voltage Zero gate voltage collector current VCE(sat) ICES µA VCE = 1000 V, VGE = 0 V, Tj = 25 °C - 1 100 VCE = 1000 V, VGE = 0 V, Tj = 125 °C - - 300 Gate-emitter leakage current IGES VGE = 20 V, VCE = 0 V nA - 0.1 100 AC Characteristics Transconductance gfs VCE = 20 V, IC = 1.5 A Input capacitance 1.7 pF - 650 870 - 50 80 - 20 30 Crss VCE = 25 V, VGE = 0 V, f = 1 MHz Semiconductor Group - Coss VCE = 25 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance 2.5 Ciss VCE = 25 V, VGE = 0 V, f = 1 MHz Output capacitance S 2 Jul-30-1996 BUP 302 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Switching Characteristics, Inductive Load at Tj = 125 °C Turn-on delay time td(on) ns VCC = 600 V, VGE = 15 V, IC = 5 A RGon = 68 Ω Rise time - 30 50 - 20 30 - 180 270 - 15 25 tr VCC = 600 V, VGE = 15 V, IC = 5 A RGon = 68 Ω Turn-off delay time td(off) VCC = 600 V, VGE = -15 V, IC = 5 A RGoff = 68 Ω Fall time tf VCC = 600 V, VGE = -15 V, IC = 5 A RGoff = 68 Ω Total turn-off loss energy Eoff mWs VCC = 600 V, VGE = -15 V, IC = 5 A RGoff = 68 Ω Semiconductor Group - 3 0.7 - Jul-30-1996 BUP 302 Power dissipation Ptot = ƒ(TC) parameter: Tj ≤ 150 °C Collector current IC = ƒ(TC) parameter: VGE ≥ 15 V , Tj ≤ 150 °C 130 12 W A 110 Ptot 10 IC 100 90 9 8 80 7 70 6 60 5 50 4 40 3 30 20 2 10 1 0 0 0 20 40 60 80 100 120 °C 160 0 20 40 60 80 100 120 °C TC 160 TC Safe operating area IC = ƒ(VCE) parameter: D = 0, TC = 25°C , Tj ≤ 150 °C Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T IGBT 10 1 10 2 K/W A t = 30.0µs p IC ZthJC 10 0 10 1 100 µs 10 -1 D = 0.50 0.20 10 0 0.10 1 ms 0.05 10 -2 0.02 0.01 single pulse 10 ms 10 -1 0 10 10 1 10 2 DC 3 V 10 10 -3 -5 10 VCE Semiconductor Group 10 -4 10 -3 10 -2 10 -1 s 10 0 tp 4 Jul-30-1996 BUP 302 Typ. output characteristics Typ. transfer characteristics IC = f(VCE) IC = f (VGE) parameter: tp = 80 µs, Tj = 125 °C parameter: tP = 80 µs, VCE = 20 V, Tj = 25 °C Typ. saturation characteristics Typ. saturation characteristics VCE(sat) = f (VGE) VCE(sat) = f (VGE) parameter: Tj = 25 °C parameter: Tj = 125 °C Semiconductor Group 5 Jul-30-1996 BUP 302 Typ. capacitances Typ. gate charge VGE = ƒ(QGate) parameter: IC puls = 6 A C = f (VCE) parameter: VGE = 0 V, f = 1 MHz 20 V VGE 16 400 V 800 V 14 12 10 8 6 4 2 0 0 10 20 30 40 50 nC 65 Q Gate Typ. switching time t = f (RG), inductive load, Tj = 125 °C parameter: VCE = 600 V, VGE = ± 15 V, IC = 5 A Semiconductor Group 6 Jul-30-1996 BUP 302 Package Outlines Dimensions in mm Weight: 8 g Semiconductor Group 7 Jul-30-1996