INFINEON BUP300

BUP 300
IGBT
Preliminary data
• Low forward voltage drop
• High switching speed
• Low tail current
• Latch-up free
• Avalanche rated
Pin 1
Pin 2
G
Type
VCE
IC
BUP 300
1200V 3.6A
Pin 3
C
E
Package
Ordering Code
TO-218 AB
Q67078-A4203-A2
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
VCE
Collector-gate voltage
VCGR
RGE = 20 kΩ
Values
Unit
1200
V
1200
Gate-emitter voltage
VGE
DC collector current
IC
± 20
A
TC = 25 °C
3.6
TC = 90 °C
2.4
Pulsed collector current, tp = 1 ms
ICpuls
TC = 25 °C
7.2
TC = 90 °C
4.8
EAS
Avalanche energy, single pulse
mJ
IC = 1.5 A, VCC = 50 V, RGE = 25 Ω
L = 3.3 mH, Tj = 25 °C
3.5
Ptot
Power dissipation
TC = 25 °C
W
40
Chip or operating temperature
Tj
-55 ... + 150
Storage temperature
Tstg
-55 ... + 150
Semiconductor Group
1
°C
Jul-30-1996
BUP 300
Maximum Ratings
Parameter
Symbol
DIN humidity category, DIN 40 040
-
IEC climatic category, DIN IEC 68-1
-
Values
Unit
E
-
55 / 150 / 56
Thermal Resistance
≤ 3.1
RthJC
Thermal resistance, chip case
K/W
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
Static Characteristics
Gate threshold voltage
VGE(th)
VGE = VCE, IC = 0.1 mA
V
4.5
5.5
6.5
VGE = 15 V, IC = 1.5 A, Tj = 25 °C
-
2.8
3.3
VGE = 15 V, IC = 1.5 A, Tj = 125 °C
-
3.8
4.3
VGE = 15 V, IC = 1.5 A, Tj = 150 °C
-
4
4.5
Collector-emitter saturation voltage
Zero gate voltage collector current
VCE(sat)
ICES
µA
VCE = 1000 V, VGE = 0 V, Tj = 25 °C
-
1
25
VCE = 1000 V, VGE = 0 V, Tj = 125 °C
-
-
100
Gate-emitter leakage current
IGES
VGE = 20 V, VCE = 0 V
nA
-
0.1
100
AC Characteristics
Transconductance
gfs
VCE = 20 V, IC = 1.5 A
Input capacitance
-
pF
-
225
320
-
25
40
-
13
24
Crss
VCE = 25 V, VGE = 0 V, f = 1 MHz
Semiconductor Group
-
Coss
VCE = 25 V, VGE = 0 V, f = 1 MHz
Reverse transfer capacitance
0.6
Ciss
VCE = 25 V, VGE = 0 V, f = 1 MHz
Output capacitance
S
2
Jul-30-1996
BUP 300
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
Switching Characteristics, Inductive Load at Tj = 125 °C
Turn-on delay time
td(on)
ns
VCC = 600 V, VGE = 15 V, IC = 1.5 A
RGon = 100 Ω
Rise time
-
30
50
-
20
30
-
170
250
-
15
25
tr
VCC = 600 V, VGE = 15 V, IC = 1.5 A
RGon = 100 Ω
Turn-off delay time
td(off)
VCC = 600 V, VGE = -15 V, IC = 1.5 A
RGoff = 100 Ω
Fall time
tf
VCC = 600 V, VGE = -15 V, IC = 1.5 A
RGoff = 100 Ω
Total turn-off loss energy
Eoff
mWs
VCC = 600 V, VGE = -15 V, IC = 1.5 A
RGoff = 100 Ω
Semiconductor Group
-
3
0.25
-
Jul-30-1996
BUP 300
Power dissipation
Ptot = ƒ(TC)
parameter: Tj ≤ 150 °C
Ptot
Collector current
IC = ƒ(TC)
parameter: VGE ≥ 15 V , Tj ≤ 150 °C
45
4.5
W
A
IC
35
3.5
30
3.0
25
2.5
20
2.0
15
1.5
10
1.0
5
0.5
0
0
0.0
20
40
60
80
100
120
°C
160
0
20
40
60
80
100
120
°C
TC
Safe operating area
IC = ƒ(VCE)
parameter: D = 0, TC = 25°C , Tj ≤ 150 °C
10 1
160
TC
Transient thermal impedance
Zth JC = ƒ(tp)
parameter: D = tp / T
IGBT
10 1
t = 4.5µs
p
10 µs
A
K/W
IC
ZthJC
100 µs
10
0
10 0
1 ms
D = 0.50
0.20
10 ms
10
-1
10
-1
0.10
0.05
0.02
single pulse
DC
10 -2
0
10
10
1
10
2
10
3
10 -2
-5
10
V
VCE
Semiconductor Group
10
-4
0.01
10
-3
10
-2
10
-1
s 10
0
tp
4
Jul-30-1996
BUP 300
Typ. output characteristics
Typ. transfer characteristics
IC = f(VCE)
IC = f (VGE)
parameter: tp = 80 µs, Tj = 125 °C
parameter: tP = 80 µs, VCE = 20 V, Tj = 25 °C
Typ. saturation characteristics
Typ. saturation characteristics
VCE(sat) = f (VGE)
VCE(sat) = f (VGE)
parameter: Tj = 25 °C
parameter: Tj = 125 °C
Semiconductor Group
5
Jul-30-1996
BUP 300
Typ. capacitances
Typ. gate charge
VGE = ƒ(QGate)
parameter: IC puls = 1 A
C = f (VCE)
parameter: VGE = 0 V, f = 1 MHz
20
V
VGE
16
14
400 V
800 V
12
10
8
6
4
2
0
0
4
8
12
16
20
24
32
Q Gate
Semiconductor Group
6
Jul-30-1996
BUP 300
Package Outlines
Dimensions in mm
Weight: 8 g
Semiconductor Group
7
Jul-30-1996