2SC1623xLT1(SOT 23)

WILLAS
FM120-M+
2SC1623xLT1
THRU
General Purpose Transistors
FM1200-M+
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
We declare that the material of product compliance with RoHS requirements.
• High current capability, low forward voltage drop.
Pb-Free
package
is available
capability.
• High surge
RoHS
product
for
packing
code
suffix ”G”
protection.
• Guardring for overvoltage
Ultra
high-speed
switching.
•
Halogen free product for packing code suffix “H”
epitaxial planar
metal silicon junction.
• SiliconSensitivity
Moisture
Levelchip,
1
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
MAXIMUM
RATINGS
• RoHS product for packing code suffix "G"
HalogenRating
free product for packing code
suffix "H"
Symbol
Value
Unit
VCEO
50
V
• Epoxy : UL94-V0
Collector-Base
Voltagerated flame retardant
VCBO
60
V
Mechanical
data
Collector-Emitter
Voltage
• Case : Molded plastic, SOD-123H
VEBO
7
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Emitter-Base Voltage
Collector current-continuoun
Method 2026
IC
0.012(0.3) Typ.
SOT– 23
0.040(1.0)
30.024(0.6)
COLLECTOR
0.031(0.8) Typ.
V
0.031(0.8) Typ.
1
150
mAdc
BASE
THERMAL
• Polarity : CHARATEERISTICS
Indicated by cathode band
Dimensions in inches and (millimeters)
2
Characteristic
: Any
• Mounting Position
Total
Device
Dissipation
FR-5
Board,
• Weight : Approximated
0.011
gram(1)
Symbol
Max
Unit
225
mW
EMITTER
PD
o
TA=25 C
MAXIMUM
RATINGS AND ELECTRICAL CHARACTERISTICS
o
Derate
above
25
C
1.8
mW/oC
Ratings at 25℃ ambient temperature unless otherwise specified.
Thermal
Junction
to Ambient
Single
phase Resistance,
half wave, 60Hz,
resistive
of inductive load.
ForTotal
capacitive
load,
derate current by 20%
Device
Dissipation
RATINGS
Alumina Substrate,
(2) TA=25 oC
Marking Code
o
VRRM
Maximum RMS Voltage
Thermal Resistance, Junction to Ambient
VRMS
Junction
and Storage
Maximum
DC Blocking
VoltageTemperature
VDC
DEVICE
Maximum
AverageMARKING
Forward Rectified Current
IO
2SC1623QLT1=L5
2SC1623RLT1 =L6
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
556
o
C/W
PD
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
Derate above 25 C
Maximum Recurrent Peak Reverse Voltage
R θJA
IFSM
12
20
13
30
R
14θJA
Tj 20
,Tstg
21
300
14
2.4 40
41728
-55 to +150
30
40
mW
15
16
o
C 60
mW/
50
o
C/W 42
35
o
50C
60
18
80
10
100
115
150
120
200
Vo
56
70
105
140
Vo
80
100
150
200
Vo
1.0
30
2SC1623SLT1=L7
o
ELECTRICAL CHARACTERISTICS (TA=25 C unless
otherwise noted)
Typical Thermal Resistance (Note 2)
Characteristic
Typical Junction Capacitance (Note
1)
CJ
TJ
Operating
Range
OFFTemperature
CHARACTERISTICS
RΘJA
Storage
Temperature
Collector
CutoffRange
Current (VCB=60V)
TSTG
Emitter Cutoff Current (VBE=5V)
CHARACTERISTICS
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
-55 to +125
I
I
CBO
40
Typ
120
Min
Max
℃
Unit
P
-55 to +150
-
Am
- 65 to +175
-
EBO
0.1
0.1
℃
µA
µA
℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
VF
Maximum Forward Voltage at 1.0A DC
Symbol
Am
@T A=125℃
IR
0.50
0.70
0.85
0.5
0.9
0.92
Vo
10
mA
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
2SC1623xLT1THRU
General Purpose Transistors
FM1200-M+
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
ON CHARACTERISTICS
• Low power loss, high efficiency.
0.146(3.7)
0.130(3.3)
DC Current
current capability, low forward voltage drop.
• HighGain
CE=6V)capability.
(IC=1.0mA,
• HighVsurge
Collector-Emitter
Voltage
for overvoltage
protection.
• GuardringSaturation
high-speed switching.
• UltraB=10mA)
(IC=100mA,I
epitaxial planar
chip, metal silicon junction.
• SiliconSaturation
Base-Emitter
Voltage
Lead-free parts meet environmental standards of
•
B=10mA)
(IC=100mA,I
MIL-STD-19500 /228
120
hFE
for packing code suffix "G"
Base -Emitter
On Voltage
• RoHS product
CE=6.0V)
IC=1mA,V
Halogen
free product for packing code suffix "H"
0.012(0.3) Typ.
560
V CE(sat)
-
0.15
0.3
0.071(1.8)
0.056(1.4)
VBE(sat)
-
0.86
1.0
V
0.55
0.62
0.65
V
V BE
Mechanical data
-
V
0.040(1.0)
0.024(0.6)
rated flame retardant
• Epoxy : UL94-V0CHARACTERISTICS
SMALL-SIGNAL
SOD-123H
• Case : Molded plastic,
Current-Gain-Bandwidth
Product
,
• Terminals
:Plated terminals, solderable per MIL-STD-750
E =1.0MHz)
(VCE=6.0V,I
Method
2026
CE = 6V,
Output Capacitance(V
IE=0, f=1.0MHz)
Ft
-
0.031(0.8) Typ.
Cob
-
3
-
-
• Polarity : Indicated by cathode band
hFE• Values
classified
Mountingare
Position
: Any as followes
• Weight : Approximated 0.011 gram
NOTE:
250
MHz
0.031(0.8) Typ.
Pf
Dimensions in inches and (millimeters)
*
Q
R
S
120~270
180~390 CHARACTERISTICS
270~560
hFE RATINGS
MAXIMUM
AND ELECTRICAL
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phaseMARKING
half wave, 60Hz,
resistive
of inductive INFORMATION
load.
DEVICE
AND
ORDERING
For capacitive load, derate current by 20%
Shipping
Device
Marking
RATINGS
2SC1623QLT1
Marking Code
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
3000/Tape&Reel
L5
L6
2SC1623RLT1
Maximum
Recurrent Peak Reverse Voltage
Maximum RMS Voltage
2SC1623SLT1
Maximum DC Blocking Voltage
12
13
20
30
VRRM 3000/Tape&Reel
14
40
14
21
VRMS 3000/Tape&Reel
20
30
VDC
L7
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
CJ
Typical Junction Capacitance (Note 1)
TJ
Operating Temperature Range
Storage Temperature Range
16
60
18
80
10
100
115
150
120
200
V
28
35
42
56
70
105
140
V
40
50
60
80
100
150
200
V
IO
IFSM
RΘJA
Typical Thermal Resistance (Note 2)
15
50
1.0
30
40
120
-55 to +125
A
A
℃
-55 to +150
- 65 to +175
TSTG
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.50
0.70
0.85
0.9
0.92
0.5
10
V
m
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
2SC1623xLT1
THRU
General Purpose Transistors
FM1200-M+
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
Package outline
Features
Fig.1
Grounded
emitterexcellent
propagation
process design,
powercharacteristics
dissipation offers
• Batch
SOD-123H
I C, COLLECTOR CURRENT (mA)
25°C
Fig.2 Grounded emitter output characteristics( )
100
– 55°C
T A = 100°
C
I C, COLLECTOR CURRENT (mA)
better reverse leakage current and thermal resistance.
50 profile surface mounted application in order to
• Low
VCE= 6 V
optimize board space.
20 power loss, high efficiency.
• Low
current capability, low forward voltage drop.
• High
10
• High surge capability.
50
for overvoltage protection.
• Guardring
• Ultra high-speed switching.
2
• Silicon epitaxial planar chip, metal silicon junction.
1
parts meet environmental standards of
• Lead-free
MIL-STD-19500 /228
0.5
product for packing code suffix "G"
• RoHS
Halogen free product for packing code suffix "H"
0.50mA
T A = 25°C
0.146(3.7)
0.130(3.3)
80
0.012(0.3) Typ.
60
0.071(1.8)
0.056(1.4)
40
20
0.2
Mechanical
data
0.1
0
: UL94-V0
rated
flame
retardant
• Epoxy
0
–0.2
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
–1.6
plastic,
SOD-123H
• Case : Molded
V BE , BASE TO EMITTER VOLTAGE(V)
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0
V
Method 2026
Fig.3 Grounded
emitter output characteristics( )
h FE, DC CURRENT GAIN
I C, COLLECTOR CURRENT (mA)
, COLLECTOR TO EMITTER VOLTAGE (V)
RATINGS
0
4
Maximum DC Blocking
Voltage
200
100
50
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
12
20
VRRM
8
13
30
VRMS
14
21
VDC16
2020
30
12
14
40
20
15
50
28
10
0.240
superimposed on rated load (JEDEC method)
Operating 500
Temperature Range
TJ
Storage Temperature Range
TSTG
CHARACTERISTICS
VF
100
Maximum Average
Reverse Current at @T A=25℃
IR
@T A=125℃
50
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
20
2- Thermal Resistance
From Junction to Ambient
10
0.2
0.5
1
2
5
10
20
50
I C, COLLECTOR CURRENT (mA)
2012-06
70
8020
50100100
Vo
105
140
Vo
200150
200
Vo
Am
Am
℃/
120
P
-55 to +150
℃
- 65 to +175
℃
0.2
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
Maximum Forward Voltage at 1.0A DC
Rated DC Blocking Voltage
56
120
200
Fig.6 Collector-emitter saturation voltage vs.
40current collector
0.5
-55 to +125
200
V CE(sat), COLLECTOR SATURATION VOLTAGE(V)
CJ
10
115
150
30
RΘJA
Typical Junction Capacitance (Note 1)
42
60 5
2
10
100
Fig.5 DC current gain vs. collector current ( )
Typical Thermal Resistance (Note 2)
1
50
18
80
I C, COLLECTOR
CURRENT (mA)
1.0
IFSM
Peak Forward Surge Current 8.3 ms single half sine-wave
16
60
35
0.5
V CE , COLLECTOR
TO EMITTER VOLTAGE
Maximum Average Forward
Rectified Current
IO (V)
h FE, DC CURRENT GAIN
0.031(0.8) Typ.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Maximum RMS
Voltage
0
2012-
0.040(1.0)
0.024(0.6)2.0
Dimensions in inches and (millimeters)
Maximum Recurrent Peak Reverse Voltage
1.6
500
Marking Code2
NOTES:
1.2
Fig.4 DC current gain vs. collector current ( )
6
Ratings at 25℃
ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive
4 load, derate current by 20%
0.8
CE
0.031(0.8)
Typ.
• Polarity : Indicated by cathode band
10
• Mounting Position : Any
• Weight
: Approximated 0.011 gram
8
0.4
100
200
0.50
0.1
0.70
0.9
0.85
0.5
0.92
mA
10
0.05
Vo
0.02
0.01
0.2
0.5
1
2
5
10
20
50
100
200
I C, COLLECTOR CURRENT (mA)
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
2SC1623xLT1THRU
General Purpose Transistors
FM1200-M+
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
optimize boardcollector
space. current ( )
power loss, high efficiency.
• Low
0.5
• High current capability, low forward voltage drop.
• High surge capability.
0.2
for overvoltage protection.
• Guardring
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
0.1
• Lead-free parts meet environmental standards of
•
MIL-STD-19500 /228
0.05
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical
data
0.02
• Epoxy : UL94-V0 rated flame retardant
0.01
: Molded plastic, SOD-123H
• Case
,
0.2
0.5:Plated
1
2
5
10
20
50 MIL-STD-750
100
200
• Terminals
terminals,
solderable
per
V CE(sat), COLLECTOR SATURATION VOLTAGE(V)
V CE(sat), COLLECTOR SATURATION VOLTAGE(V)
Fig.7
Collector-emitter saturation voltage vs.
profile surface mounted application in order to
• Low
Fig.8 Collector-emitter saturation voltage vs.
collector current ( )
0.146(3.7)
0.130(3.3)
0.5
0.2
0.071(1.8)
0.056(1.4)
0.1
0.05
0.02
0.040(1.0)
0.024(0.6)
0.01
0.031(0.8) Typ.
0.2
0.5
I C, COLLECTOR
Method
2026 CURRENT (mA)
C ob , COLLECTOR OUTPUT CAPACITANCE( pF)
C ib , EMITTER INPUT CAPACITANCE (pF)
f r , TRANSITION FREQUENCY(MHz)
RATINGS
200
12
20
13
30
100 Voltage
Maximum RMS
VRMS
14
21
Maximum DC Blocking Voltage
VDC
20
30
Maximum Average Forward Rectified Current
IO
IFSM
50
–0.5 Current
–1
–10
–20
Peak Forward Surge
8.3–2ms single–5half sine-wave
superimposed on rated load I(JEDEC
method)
, EMITTER
CURRENT (mA)
E
–50
–100
50
100
10
15
50
16
60
18
80
10
100
115
150
120
200
V
28
35
42
56
70
105
140
V
50
60
80
100
150
200
V
2
1.0
1 30
1
0.2
0.5
A
2
5
10
20
A
50
V CB, COLLECTOR TO BASE VOLTAGE (V)
Typical Junction
(Note 1)time constant vs.emitter
CJ
Fig.11 Capacitance
Base-collector
current
-55 to +125
Operating Temperature Range
TJ
Storage Temperature Range
14
40
40
RΘJA
Typical Thermal Resistance (Note 2)
C c-r bb, BASE COLLECTOR TIME CONSTANT( ps)
20
SYMBOL FM120-MH FM130-MH FM140-MH 5FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
VRRM
℃
40 TO BASE VOLTAGE (V)
V EB, EMITTER
120
P
-55 to +150
- 65 to +175
TSTG
200
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
VF
100
Maximum Forward
Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
@T A=125℃
Rated DC Blocking Voltage
NOTES:
10
20
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
5
Dimensions in inches and (millimeters)
500
Marking Code
2
Fig.10 Collector output capacitance vs.collector-base voltage
Emitter inputcapacitance vs. emitter-base voltage
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
0.031(0.8) Typ.
1
I C, COLLECTOR CURRENT (mA)
• Polarity : Indicated by cathode band
GainPosition
bandwidth
Mounting
: Any product vs. emitter current
•Fig.9
• Weight : Approximated 0.011 gram
0.012(0.3) Typ.
50
0.50
0.70
0.85
0.5
IR
0.9
0.92
V
10
m
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
20
2- Thermal Resistance From Junction to Ambient
10
–0.2
–0.5
–1
–2
–5
–10
I E, EMITTER CURRENT (mA)
2012-06
2012-
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
2SC1623xLT1
THRU
General Purpose Transistors
FM1200-M+
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Features
SOT-23
offers
• Batch process design, excellent power dissipation
Pb Free Product
Package outline
better reverse leakage current and thermal resistance.
SOD-123H
.006(0.15)MIN.
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection. .122(3.10)
• Ultra high-speed switching.
junction.
• Silicon epitaxial planar chip, metal silicon.106(2.70)
• Lead-free parts meet environmental standards of
.063(1.60)
.047(1.20)
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
.110(2.80)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
.008(0.20)
.080(2.04)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
.070(1.78)
Ratings at 25℃ ambient temperature unless otherwise specified.
.003(0.08)
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Marking Code
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
14
40
15
50
16
60
18
80
10
100
115
150
120
200
Volts
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140
Volts
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
Volts
Maximum Average Forward Rectified Current
IO
IFSM
.004(0.10)MAX.
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
CJ
Typical Junction Capacitance (Note 1)
.020(0.50)
TJ
TSTG
.012(0.30)
Operating Temperature Range
Storage Temperature Range
CHARACTERISTICS
-55 to +125
40
120
Amp
Amp
℃/W
PF
-55 to +150
℃
- 65 to +175
℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
1.0
30
.055(1.40)
.035(0.89)
.083(2.10)
Halogen free product for packing code suffix "H"
Mechanical data
0.50
0.70
Dimensions
in inches and (millimeters)
IR
@T A=125℃
0.85
0.5
0.9
0.92
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-
Volts
WILLAS ELECTRONIC CORP.
mAmp
WILLAS
FM120-M+
2SC1623xLT1THRU
General Purpose Transistors
FM1200-M+
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
0.146(3.7)
high efficiency.
• Low power loss,
Device PN Packing 0.130(3.3)
forward voltage drop.
• High current capability,
(2) low (1)
2SC1623 x
Tape&Reel: 3 Kpcs/Reel capability.LT1 G ‐WS • High surge
Guardring
for
overvoltage
protection.
•
Note: (1) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” • Ultra high-speed switching.
• Silicon
(2) CLASSIFICATION OF h
RANK epitaxial planar chip, FE metal
silicon junction.
Lead-free parts meet environmental standards of
•
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Ordering Information: 0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
• Polarity : Indicated
by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
***Disclaimer*** WILLAS reserves the right to make changes without notice to any product MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
specification herein, to make corrections, modifications, enhancements or other Ratings at 25℃ ambient temperature unless otherwise specified.
changes. WILLAS or anyone on its behalf assumes no responsibility or liability Single phase
half wave, 60Hz, resistive of inductive load.
For
capacitive
load, derate current by 20%
for any errors or inaccuracies. Data sheet specifications and its information SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
RATINGS
contained are intended to provide a product description only. "Typical" parameters Marking Code
12
13
14
15
16
18
10
115
120
20
30
40
50
60
80
100
150
200
Maximumwhich may be included on WILLAS data sheets and/ or specifications can Recurrent Peak Reverse Voltage
Vo
VRRM
Vo
14
21
28
35
42
56
70
105
140
Maximumand do vary in different applications and actual performance may vary over time. RMS Voltage
VRMS
Vo
Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
WILLAS does not assume any liability arising out of the application or Am
Maximum Average Forward Rectified Current
IO
1.0
use of any product or circuit. Peak Forward Surge Current 8.3 ms single half sine-wave
30
IFSM
Am
on rated load (JEDEC method)
superimposed
℃
40
Typical Thermal Resistance (Note 2)
RΘJA
WILLAS products are not designed, intended or authorized for use in medical, P
120
Typical Junction Capacitance (Note 1)
CJ
-55 to +125
-55 to +150
Operatinglife‐saving implant or other applications intended for life‐sustaining or other related Temperature Range
TJ
℃
- 65 to +175
Storage Temperature Range
TSTG
℃
applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
Vo
0.9
Maximum Forward Voltage at 1.0A DC
0.92
VF
0.50
0.70
0.85
of WILLAS. Customers using or selling WILLAS components for use in 0.5
Maximum Average Reverse Current at @T A=25℃
IR
mA
10
@T A=125℃
Rated DCsuch applications do so at their own risk and shall agree to fully indemnify WILLAS Blocking Voltage
NOTES: Inc and its subsidiaries harmless against all claims, damages and expenditures. 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
Similar pages