BCX53(SOT 89)

WILLAS
FM120-M+
BCX53
SOT-89
Plastic-Encapsulate Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
THRU
FM1200-M
Pb Free Produ
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
TRANSISTOR
(PNP)
• Low profile surface mounted application in order to
SOD-123H
optimize board space.
FEATURES
• Low power loss, high efficiency.
current capability,
low forward voltage drop.
• High
package
is available
z Pb-Free
• High surge capability.
RoHS product for packing code suffix ”G”
• Guardring for overvoltage protection.
Halogen
free
product switching.
for packing code suffix “H”
high-speed
• Ultra
• Silicon epitaxial planar chip, metal silicon junction.
z Low Voltage
• Lead-free parts meet environmental standards of
z High Current
MIL-STD-19500 /228
product for packing
code
Sensitivity
Level
1 suffix "G"
• RoHS
z Moisture
0.146(3.7)
0.130(3.3)
SOT-89
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
1. BASE
2. COLLECTOR
Halogen free product for packing code suffix "H"
APPLICATIONS
Mechanical data
z Medium Power General Purposes
• Epoxy : UL94-V0 rated flame retardant
z Driver •Stages
of Audio Amplifiers
Case : Molded plastic, SOD-123H
,
MARKING:BCX53:AH, BCX53-10:AK, BCX53-16:AL
• Terminals :Plated terminals, solderable per MIL-STD-750
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
3. EMITTER
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
by cathode band
Symbol • Polarity : Indicated
Parameter
VCBO
VCEO
Value
Unit
-100
-80
V
V
-5
V
-1
A
500
mW
250
℃/W
PositionVoltage
: Any
• Mounting
Collector-Base
• Weight
: Approximated
0.011 gram
Collector-Emitter
Voltage
VEBO
Emitter-Base Voltage
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Current
IRatings
C
at Collector
25℃ ambient
temperature unless otherwise specified.
Collector
Power
Dissipation
PSingle
phase
half wave,
60Hz,
resistive of inductive load.
C
load, derate
currentFrom
by 20%
Thermal
Resistance
Junction To Ambient
RFor capacitive
θJA
Tj
Junction
Marking Code
RATINGS
Temperature
SYMBOL FM120-MH FM130-MH
150 FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
Maximum RMS Voltage
VRMS
14
Tstg
Storage Temperature
13
14
-55~+150
30
40
21
℃
15
℃50
28
16
60
18
80
42
60
35
otherwise
specified)
ELECTRICAL
CHARACTERISTICS (Ta=25℃ Vunless
Maximum DC Blocking Voltage
20
30
40
50
DC
Maximum Average Forward Rectified Current
Parameter
IO
Symbol T est
conditions
Collector-base breakdown voltage
superimposed on rated load (JEDEC method)
Collector-emitter breakdown voltage
V(BR)CBOIFSM IC=-100µA,IE=0
IC=-10mA,IB=0
V(BR)CEO*
-100
-80
Emitter-base
breakdown
voltage
Typical Junction
Capacitance
(Note 1)
V(BR)EBO CJ IE=-100µA,IC=0 -5
Typical Thermal Resistance (Note 2)
RΘJA
Operating
Temperature
Collector
cut-off
currentRange
ICBO
Emitter cut-off current
IEBO
Storage Temperature Range
CHARACTERISTICS
to +125
TJ VCB=-30V,I-55
E=0
TSTG
@T A=125℃
VCE(sat)*
IC=-0.5A,IB=-50mA
Base -emitter voltage
VBE*
VCE=-2V, IC=-0.5A
Transition frequency
fT
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
70
105
140
80
100
150
200
40
120
Max
Unit
V
V
V
-55 to +150
-0.1
µA
-0.1
µA
hFE(1)*SYMBOLVCE
=-2V, ICFM130-MH
=-5mA FM140-MH FM150-MH
63FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
FM120-MH
0.70
63
hFE(3)* IR VCE=-2V, IC=-0.5A
Rated DC Blocking Voltage
56
- 65 to +175
VEB=-5V,IC=0
Maximum Average Reverse Current at @T A=25℃
Collector-emitter
saturation voltage
120
200
0.50
hFE(2)* VF VCE=-2V, IC=-150mA
Maximumgain
Forward Voltage at 1.0A DC
DC current
115
150
1.0
Typ
30
Min
Peak Forward Surge Current 8.3 ms single half sine-wave
10
100
40
VCE=-5V,IC=-10mA, f=100MHz
0.9
0.85
250
0.5
10
50
0.92
-0.5
V
-1
V
MHz
Test
* Pulse
CLASSIFICATION OF hFE(2)
RANK
BCX53
BCX53-10
RANGE
63–250
63–160
2012-06
2012-0
BCX53-16
100–250
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
WILLAS
BCX53
SOT-89 Plastic-Encapsulate Transistors
Features
Static Characteristic
• Batch process design, excellent power dissipation offers
hFE —— IC
1000
VCE= -2V
better
reverse leakage current and thermal resistance.
COMMON
SOD-123H
EMITTER
profile surface mounted application in order to
• Low
T =25℃
(mA)
-350
o
Ta=100 C
hFE
a
optimize
board space.
-2.0mA
-1.8mA
efficiency.
• Low power loss, high
-250
low forward voltage drop.
• High current capability,-1.6mA
-1.4mA
High
surge
capability.
•
-1.2mA
-200
• Guardring for overvoltage protection.
-1.0mA
-150
• Ultra high-speed switching.
-0.8mA
Silicon epitaxial planar chip, metal silicon
junction.
•
-0.6mA
-100
of
• Lead-free parts meet environmental standards
-0.4mA
-50MIL-STD-19500 /228
• RoHS product for packing code suffix "G" IB=-0.2mA
-0
Halogen
free product
for packing
code
suffix
-0
-1
-2
-3
-4
-5 "H"
-6
COLLECTOR-EMITTER
Mechanical
data VOLTAGE
VCE
DC CURRENT GAIN
COLLECTOR CURRENT
IC
-300
0.146(3.7)
0.130(3.3)
100
o
0.071(1.8)
0.056(1.4)
10
-1
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
-10
COLLECTOR CURRENT
(V)
-800
Method
2026
T =25℃
a
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
-400
-600
Ta=100℃
VCEsat ——
β=10
Marking Code
IC
(mA)
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
-200
a
12
20
Maximum RMS Voltage
VRMS
Maximum DC Blocking Voltage
VDC
Maximum
100Average Forward Rectified Current
IO
IFSM
IC
fT
TRANSITION FREQUENCY
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal
Resistance (Note 2)
50
CJ
Typical Junction Capacitance (Note 1)
VCE=-5V
Storage Temperature Range
13
30
14
40
14
21
28
20
30
40
Cob /15
Cib
-100
-1000
——16 VCB / VEB18
50
10
100
60
80
35
42
56
f=1MHz
70
IE=0 / IC=0
50
60
80
Ta=25 C
o
100
115
150
120
200
105
140
150
200
1.0
Cib
30
100
40
120
Cob
10
-55 to +150
- 65 to +175
TSTGo
T =25 C
a
0
-40
CHARACTERISTICS
-60
COLLECTOR CURRENT
Maximum Forward Voltage at 1.0A DC
IC ——
-80
IC
(mA)
VF
VBE
Maximum
Average Reverse Current at @T A=25℃
-1000
-1
0.50
IR
@T A=125℃
Rated DC Blocking Voltage
1
-0.1
-100
-10
-20
REVERSE FM160-MH
VOLTAGE FM180-MH
V (V)
FM1100-MH FM1150-MH FM1200-MH
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH
Pc
0.75
COLLECTOR POWER DISSIPATION
Pc (W)
-20
-10
-55 to +125
TJ
Operating Temperature Range
-0
-1
1000
CAPACITANCE
——
(MHz)
fT
Ta=25℃
C
VRRM
IC (mA)
0.040(1.0)
0.024(0.6)
IC
(mA)
FM150-MHCURRENT
FM160-MHIC FM180-MH
FM1100-MH FM1150-MH FM1200-MH
SYMBOL FM120-MH FM130-MH FM140-MHCOLLECTOR
150
Maximum
Recurrent Peak Reverse Voltage
-100
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
COLLECTOR CURRENT
-1000
(mA)
-300
-0
-0.1
(pF)
COLLECTOR CURRENT
RATINGS
IC
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
-100
T =100℃
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
-0
For capacitive
load, derate
current-10by 20%
-0.1
-1
-100
-1000
NOTES:
-100
0.031(0.8) Typ.
-200
0.012(0.3) Typ.
Ta=25 C
flameI retardant
• Epoxy : UL94-V0 rated
VBEsat ——
C
-400
-1000
:
Molded
plastic,
SOD-123H
• Case
β=10
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Pb Free Produc
Typical Characteristics
Package outline
-400
THRU
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
FM120-M+
2- Thermal Resistance From Junction
to Ambient
o
Ta=100 C
-10
Ta=25℃
-1
0.70
——
0.9
0.85
Ta
0.92
0.5
10
0.50
0.25
VCE=-2V
-0.1
2012-06
-0
0.00
-200
-400
-600
BASE-EMITTER VOLTAGE
2012-0
-800
VBE(mV)
-1000
0
25
50
75
WILLAS ELECTRONIC COR
AMBIENT TEMPERATURE
100
Ta
125
150
(℃ )
WILLAS ELECTRONIC CORP.
WILLAS
BCX53
SOT-89 Plastic-Encapsulate Transistors
FM120-M+
THRU
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Produc
Package outline
Features
• Batch process design, excellent power dissipation offers
Outline Drawing
SOT-89
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
.181(4.60)
Mechanical data
retardant
• Epoxy : UL94-V0 rated flame.173(4.39)
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
.061REF
Method 2026
0.040(1.0)
0.024(0.6)
.063(1.60)
0.031(0.8) Typ.
0.031(0.8) Typ.
.055(1.40)
(1.55)REF
• Polarity : Indicated by cathode
band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
.167(4.25)
Marking Code
.154(3.91)
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
12
20
V
RRM
.023(0.58)
13
30
14
VRMS
.016(0.40)
21
28
20
30
40
Maximum DC Blocking Voltage
VDC
Maximum Average Forward Rectified Current
IO
IFSM
.047(1.2)
Peak Forward
Surge Current 8.3 ms single half sine-wave
superimposed
on rated load (JEDEC method)
.031(0.8)
RΘJA
Typical Thermal Resistance (Note 2)
CJ
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
TJ
.060TYP
(1.50)TYP
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
TSTG
40
16
60
18
80
35
42
50
60
50
10
100
115
150
120
200
56
70
105
140
80
100
150
200
1.0
30
40
120
-55 to +125
-55 to +150
- 65 to +175
.197(0.52)
.013(0.32)
.017(0.44)
FM180-MH FM1100-MH FM1150-MH FM1200-MH
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH.014(0.35)
.118TYP
(3.0)TYP
VF
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
.102(2.60)
.091(2.30)
14
15
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
@T A=125℃
0.50
0.70
0.85
0.9
0.5
IR
0.92
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
Dimensions in inches and (millimeters)
2012-06
2012-0
Rev.C COR
WILLAS ELECTRONIC
WILLAS ELECTRONIC CORP.
WILLAS
SOT-89
Plastic-Encapsulate Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
BCX53
THRU
FM1200-M
Pb Free Produc
SOD-123+ PACKAGE
Features
FM120-M+
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
SOD-123H
optimize board space.
loss, high efficiency.
• Low power
Ordering
Information:
0.146(3.7)
0.130(3.3)
• High current capability, low forward voltage drop.
Packing capability.
• High surge Device PN (3)
(1)
(2)
Guardring
for
overvoltage
protection.
•
Part Number –SOT89 G ‐WS Tape& Reel: 1 Kpcs/Reel • Ultra high-speed switching.
Note: (1)
CASE:SOT‐89 epitaxial planar chip, metal silicon junction.
• Silicon
Lead-free parts meet environmental standards of
• (2) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” 0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
RoHS
product for packing code
suffix "G"
• (3)
CLASSIFICATION OF h
FE RANK Halogen free product for packing code suffix "H"
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ***Disclaimer***
ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
WILLAS reserves the right to make changes without notice to any product Single phase
half wave, 60Hz, resistive of inductive load.
For capacitive
load, derate current by 20%
specification herein, to make corrections, modifications, enhancements or other SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
RATINGS
changes. WILLAS or anyone on its behalf assumes no responsibility or liability Marking Code
12
13
14
15
16
18
10
115
120
for any errors or inaccuracies. Data sheet specifications and its information 20
30
40
50
60
80
100
150
200
Maximum
Recurrent Peak Reverse Voltage
VRRM
14
21
28
35
42
56
70
105
140
Maximum
RMS Voltage
VRMS
contained are intended to provide a product description only. "Typical" parameters Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
which may be included on WILLAS data sheets and/ or specifications can Maximum Average Forward Rectified Current
IO
1.0
and do vary in different applications and actual performance may vary over time. Peak Forward Surge Current 8.3 ms single half sine-wave
30
IFSM
WILLAS does not assume any liability arising out of the application or superimposed
on rated load (JEDEC method)
40
Typical Thermal Resistance (Note 2)
RΘJA
use of any product or circuit. 120
Typical Junction Capacitance (Note 1)
CJ
-55
to
+125
-55 to +150
Operating Temperature Range
TJ
65
to
+175
Storage Temperature Range
TSTG
WILLAS products are not designed, intended or authorized for use in medical, life‐saving implant or other applications intended for life‐sustaining or other related CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
0.9
0.92
VF
0.50
0.70
0.85
applications where a failure or malfunction of component or circuitry may directly 0.5
Maximum Average Reverse Current at @T A=25℃
IR
or indirectly cause injury or threaten a life without expressed written approval 10
@T A=125℃
Rated DC Blocking Voltage
of WILLAS. Customers using or selling WILLAS components for use in NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
such applications do so at their own risk and shall agree to fully indemnify WILLAS 2- Thermal Resistance From Junction to Ambient
Inc and its subsidiaries harmless against all claims, damages and expenditures. Maximum Forward Voltage at 1.0A DC
2012-06
2012-0
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
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