WILLAS FM120-M+ MMBT2222ADW1T1 THRU Dual General Purpose Transistor 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V FM1200-M+ Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to power loss, high efficiency. • Low Silicon NPN optimize board space. 0.146(3.7) 0.130(3.3) • High current capability, low forward voltage drop. capability. • High surge We declare that material of product compliance • Guardring for overvoltage protection. with •ROHS requirements. Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. Pb-Free package is available parts meet environmental standards of • Lead-free MIL-STD-19500 /228 RoHS product for packing code suffix ”G” • RoHS product for packing code suffix "G" Halogen free product product for packing code suffix code "H" Halogen free for packing suffix Mechanical data 6 0.012(0.3) Typ. 5 0.071(1.8) 0.056(1.4) 1 2 3 SOT-363 “H” Moisture Sensitivity Level 1 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant : Molded plastic, SOD-123H • CaseRATINGS MAXIMUM , • Terminals :Plated terminals, solderable Rating Symbol per MIL-STD-750 Value Unit Method 2026 Collector–Emitter Voltage VCEO • Polarity : Indicated by cathode band Collector–Base Voltage VCBO • Mounting Position : Any Emitter–Base Voltage VEBO • Weight : Approximated 0.011 gram Collector Current – Continuous IC 4 40 Vdc 75 Vdc 6.0 Vdc 600 mAdc 0.031(0.8) Typ. 0.031(0.8) Typ. Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS THERMAL CHARACTERISTICS Unit 13 30 mW 14 40 21 28 RJA VDC 833 20 Junction to Ambient Maximum Average Forward Rectified Current IO Junction and Storage Temperature TJ, Tstg –55 to +150 Peak Forward Surge Current 8.3 ms single half sine-wave IFSM 30 °C/W 40 Maximum TA = RMS 25°CVoltage Symbol PD Maximum DC Blocking Voltage Thermal Resistance, 15 50 10 100 35 18 80 (5) 56 50 60 80 100 Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 40 120 -55 to +125 CHARACTERISTICS Device Maximum Average Reverse Current at @T A=25℃ MMBT2222ADW1T1 @T A=125℃ Volts 105 140 Volts 150 200 Volts Amps Amps ℃/W PF ℃ - 65 to +175 ℃ SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Shipping VF Maximum Forward Voltage at 1.0A DC (6) 120 200 -55 to +150 TSTG ORDERING INFORMATION 70 115 150 1.0 30 °C RΘJA Typical Thermal Resistance (Note 2) Rated DC Blocking Voltage (1) 16 60 (4)42 superimposed on rated load (JEDEC method) (2) FM180-MH FM1100-MHQFM1150-MH QFM160-MH SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM1200-MH UNIT 1 2 Max 12 VRRM 150 20 14 VRMS Marking Code Characteristic Maximum Recurrent Peak Reverse Total Package Dissipation (NoteVoltage 1) (3) 3000/Tape & Reel IR 0.50 0.70 0.85 0.5 0.9 0.92 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-0 Volts WILLAS ELECTRONIC CORP. mAmp WILLAS FM120-M+ MMBT2222ADW1T1 THRU Dual General Purpose Transistor 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V FM1200-M+ Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) • Silicon epitaxial planar chip, metal silicon junction. Characteristicstandards of • Lead-free parts meet environmental 0.146(3.7) 0.130(3.3) 0.071(1.8) 0.056(1.4) Symbol Min Max Unit V(BR)CEO 40 – Vdc V(BR)CBO 75 – V(BR)EBO 6.0 – ICEX – 10 – – 0.01 10 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS I EBO – 100 nAdc IBL – 20 nAdc MIL-STD-19500 /228 OFF CHARACTERISTICS • RoHS product for packing code suffix "G" Collector–Emitter Voltage HalogenBreakdown free product for packing code suffix "H" (IC = 10 mAdc, IB = 0) Mechanical data Collector–Base : UL94-V0Voltage rated flame retardant • EpoxyBreakdown (IC = 10 Adc, IE = 0) • Case : Molded plastic, SOD-123H Emitter–Base Breakdown Voltage , • Terminals :Plated terminals, solderable per MIL-STD-750 (IE = 10 Adc, IC = 0) Method 2026 Collector Cutoff Current Polarity Indicated cathode band (VCE =• 60 Vdc, V:EB(off) = 3.0 by Vdc) • Mounting Position : Any Collector Cutoff Current Weight 0.011 gram (VCB =• 60 Vdc, I:EApproximated = 0) (VCB = 60 Vdc, IE = 0, TA = 125°C) DC Current Gain Maximum Recurrent Peak Reverse Voltage (IC = 0.1 mAdc, VCE = 10 Vdc) Maximum Voltage (IC = 1.0RMS mAdc, VCE = 10 Vdc) (IC = 10 DC mAdc, VCE =Voltage 10 Vdc) Maximum Blocking (IC = 10 mAdc, VCE = 10 Vdc, TA = –55°C) Maximum Average Current (IC = 150 mAdc, Forward VCE = 10Rectified Vdc) (Note 2) (IC = 150 mAdc, VCE = 1.0 Vdc) (Note 2) Peak Forward Surge Current 8.3 ms single half sine-wave (IC = 500 mAdc, VCE = 10 Vdc) (Note 2) Vdc 0.031(0.8) Typ. Vdc nAdc Dimensions in inches and (millimeters) ICBO VRRM 12 20 13 30 14 40 15 hFE 50 VRMS 14 21 28 35 VDC 20 30 40 50 Collector–Emitter Saturation Voltage (Note 2) Typical Thermal Resistance (Note 2) (IC = 150 mAdc, IB = 15 mAdc) Typical Junction Capacitance (Note 1) (IC = 500 mAdc, IB = 50 mAdc) RΘJA CJ TJ Operating Temperature Range Base–Emitter Saturation Voltage (Note 2) Storage Temperature Range (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) CHARACTERISTICS 35 42 50 60 75 35 1.0 100 50 30 40 VCE(sat) -55 to +125 TSTG Adc VBE(sat) 18 80 10 100 – 70 – 80 – 100 – 300 – – – 56 40 – 120 – - 65 to +175 0.6 – 115 150 120 200 Volts 105 140 Volts 150 200 Volts Amp Amp Vdc 0.3 1.0 -55 to +150 Vdc 1.2 2.0 ℃/W PF ℃ ℃ SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT 2. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%. Maximum Forward Voltage at 1.0A DC 16 60 IO IFSM superimposed on rated load (JEDEC method) VF Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage 0.040(1.0) 0.024(0.6) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Marking Code 0.031(0.8) Typ. Emitter Cutoff Current Ratings (VEB = at 3.025℃ Vdc, ambient IC = 0) temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. Base Cutoff Current For capacitive load, derate current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) by 20% RATINGS ON CHARACTERISTICS 0.012(0.3) Typ. @T A=125℃ IR 0.50 0.70 0.85 0.5 0.9 0.92 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-0 Volts WILLAS ELECTRONIC CORP. mAmp WILLAS FM120-M+ MMBT2222ADW1T1 THRU Dual General Purpose Transistor FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to SMALL–SIGNAL CHARACTERISTICS optimize board space. loss, high efficiency. • Low power Current–Gain – Bandwidth Product (Note 3) current forward (IC •= High 20 mAdc, VCEcapability, = 20 Vdc, f low = 100 MHz) voltage drop. • High surge capability. Output Capacitance • Guardring for overvoltage protection. (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) • Ultra high-speed switching. Input •Capacitance Silicon epitaxial planar chip, metal silicon junction. (VEB = 0.5 Vdc, Iparts f = 1.0environmental MHz) C = 0, meet standards of • Lead-free MIL-STD-19500 /228 Input Impedance RoHS product for packing code suffix "G" (IC •= 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) for fpacking code suffix "H" (I = Halogen 10 mAdc,free V product = 10 Vdc, = 1.0 kHz) C Collector Base Time Constant MAXIMUM RATINGS AND (IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz) – 8.0 Cibo – 25 2.0 0.25 8.0 1.25 – – 8.0 4.0 50 75 300 375 hre 0.031(0.8) Typ. hfe RATINGS Delay Time Marking Code Rise Time Maximum Recurrent Peak Reverse Voltage StorageRMS TimeVoltage Maximum Maximum DC Blocking Voltage Fall Time MHz 0.012(0.3) Typ. pF 0.071(1.8) 0.056(1.4) pF kΩ X 10–4 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. Dimensions in inches and (millimeters) hoe 5.0 25 35 200 – 150 – 4.0 rb, Cc ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Noise Figure Single phase half wave, resistive of inductive load. (IC = 100 Adc, VCE =60Hz, 10 Vdc, RS = 1.0 kΩ, f = 1.0 kHz) For capacitive load, derate current by 20% SWITCHING CHARACTERISTICS – Cobo CE Mechanical data Small–Signal Current Gain terminals, solderable per MIL-STD-750 , • Terminals :Plated (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Method 2026 (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) • Polarity : Indicated by cathode band Output Admittance Position : Any (IC •= Mounting 1.0 mAdc, V CE = 10 Vdc, f = 1.0 kHz) (IC •= Weight 10 mAdc, VCE = 10 Vdc, f0.011 = 1.0 kHz) : Approximated gram 300 0.130(3.3) hie Voltage Feedback Ratio : UL94-V0 (IC •= Epoxy 1.0 mAdc, VCE = 10rated Vdc, flame f = 1.0 retardant kHz) (IC •= Case 10 mAdc, V = 10 Vdc, f = 1.0 kHz) CE plastic, SOD-123H : Molded 0.146(3.7) fT NF – mhos ps dB SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT (VCC = 30 Vdc, VBE(off) = –0.5 0.5 Vdc, 12 13 14 IC = 150 mAdc, IB1 = 15 mAdc) 20 30 40 VRRM td 15 50 tr 21 VRMS (VCC = 30 Vdc, IC14 = 150 mAdc, IB1 =VIDC B2 = 15 mAdc) 20 30 28 35 ts 40 50 tf Maximum Average Rectified Current|hfe| extrapolates IO to unity. 3. fT is defined asForward the frequency at which Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range – 10 18 80 10 25 100 42 – 56 225 70 60 – 80 60 100 ns115 150 105 ns 150 120 200 Volts 140 Volts 200 Volts 1.0 30 IFSM RΘJA Typical Thermal Resistance (Note 2) – 16 60 40 120 -55 to +125 Amps Amps ℃/W PF -55 to +150 ℃ - 65 to +175 TSTG ℃ CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.5 0.9 0.92 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-0 Volts WILLAS ELECTRONIC CORP. mAmps WILLAS FM120-M+ MMBT2222ADW1T1 THRU Dual General Purpose Transistor FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Package outline hFE , DC CURRENT GAIN Features • Batch process design, excellent power dissipation offers 1000 better reverse leakage current and thermal resistance. Low profile surface mounted application in order to •700 optimize board space. 500 Low power loss, high efficiency. •300 • High current capability, low forward voltage drop. 200 • High surge capability. • Guardring for overvoltage protection. Ultra high-speed switching. •100 Silicon epitaxial planar chip, metal silicon junction. • 70 Lead-free parts meet environmental standards of • 50 MIL-STD-19500 /228 30 RoHS product for packing code suffix "G" • 20 Halogen free product for packing code suffix "H" Mechanical data 10 0.1 0.2 Pb Free Product 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 SOD-123H 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) 10 20 30 • Epoxy : UL94-V0 rated flame retardant IC, COLLECTOR CURRENT (mA) • Case : Molded plastic, SOD-123H 0.031(0.8) Typ. , Current Gain Figure 1. DC • Terminals :Plated terminals, solderable per MIL-STD-750 50 70 100 200 300 500 700 1.0 k 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Method 2026 •1.0 Polarity : Indicated by cathode band • Mounting Position : Any •0.8 Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 0.6 Ratings at 25℃ ambient temperature unless otherwise specified. RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT 0.2 Marking Code VRRM Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage 0 0.005 0.01 Maximum DC Blocking Voltage 0.02 0.03 0.05 IO Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave 200 on rated load (JEDEC method) superimposed 100 Typical Junction Capacitance (Note 1) 70 Operating50Temperature Range t, TIME (ns) 30 20 CHARACTERISTICS Maximum Forward Voltage at 1.0A DC 10 7.0 Rated DC5.0Blocking Voltage @T A=125℃ 1- Measured 2.0 at 1 MHZ and applied reverse voltage of 4.0 VDC. IC/IB = 10 TJ = 25°C 10 18 80 10 100 115 150 120 200 Volts 35 2.0 50 42 56 70 20 100 105 140 Volts 200 Volts 3.0 60 5.0 80 10 30 150 50 1.0 30 40 t′s = ts - 1/8 tf 120 300 200 -55 to +125 Amps Amps VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25°C -55 to +150 ℃/W PF ℃ Figure 3. Turn–On Time 0.5 20 IR 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 2- Thermal Resistance From Junction to Ambient 2012-0 16 60 500 mAmps 10 NOTES: 3.0 5.0 7.0 15 50 100 - 65 to +175 ℃ 70 t 50 FM140-MH FM150-MHf FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT SYMBOL FM120-MH FM130-MH Volts 0.9 0.92 30 VF 0.50 0.70 0.85 Maximum Average Reverse Current at @T A=25℃ 14 40 14 21 28 0.2 0.3 0.5 1.0 20 30 40 IB, BASE CURRENT (mA) IFSM CJ tr @ VCC = 30 V TJ td @ VEB(off) = 2.0 V TSTG td @ VEB(off) = 0 Storage Temperature Range 13 30 Figure 2. Collector Saturation Region RΘJA Typical Thermal Resistance (Note 2) VRMS 0.1 VDC 12 20 t, TIME (ns) Single phase half wave, 60Hz, resistive of inductive load. 0.4 For capacitive load, derate current by 20% 500 10 7.0 5.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) 300 500 Figure 4. Turn–Off Time WILLAS ELECTRONIC CORP. WILLAS FM120-M+ MMBT2222ADW1T1 THRU Dual General Transistor 1.0A SURFACE MOUNTPurpose SCHOTTKY BARRIER RECTIFIERS -20V- 200V FM1200-M+ Pb Free Product SOD-123+ PACKAGE 10 Package outline Features dissipation offers • Batch process design, excellent power R = OPTIMUM 500 µA, RS = 200 Ω optimize board space. S 2.0 kΩ µA,high RS = efficiency. loss, • Low power 100 50 µA, R = 4.0 S 6.0• High current capability, kΩ low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. 4.0 • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. 2.0 • Lead-free parts meet environmental standards of MIL-STD-19500 /228 • RoHS product for packing code suffix "G" 0 Halogen free product for packing code suffix "H" 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 Mechanical data f = 1.0 kHz 8.0 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) S better reverse leakage current and thermal resistance. R = SOURCE S I = 1.0 mA, RS = 150 Ωapplication in order to 8.0 • Low profile Csurface mounted R = RESISTANCE 10 IC = 50 µA 100 µA 500 µA 1.0 mA 6.0 0.071(1.8) 0.056(1.4) 0 50 100 200 50 k 100 k 0.040(1.0) 0.024(0.6) Figure 6. Source Resistance Effects0.031(0.8) Typ. 0.031(0.8) Typ. 500 Dimensions in inches and (millimeters) VCE = 20 V TJ = 25°C 300 200 Ratings 7.0 at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. 5.0 100 For capacitive load, derate current by 20% Ccb SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT RATINGS 3.0 70 Marking Code 12 13 14 15 16 18 10 115 120 20 30 40 50 60 80 100 150 200 Maximum Volts VRRM 2.0 Recurrent Peak Reverse Voltage 50 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 0.1 Volts 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA) Volts Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC Peak 1.0 Forward Surge Current 8.3 ms single half sine-wave superimposed rated load (JEDEC method) T on = 25°C J Typical Thermal Resistance (Note 2) 0.8 +0.5 RΘJA CJ BE(sat) C B Range Operating Temperature TJ 1.0 V V, VOLTAGE (VOLTS) Typical Junction Capacitance (Note 1) V @ I /I = 10 0.6 Temperature Range Storage CHARACTERISTICS Maximum Average Reverse Current at @T A=25℃ Rated0.2 DC Blocking Voltage NOTES: 0 @T A=125℃ IR 1- Measured 4.0 100 VDC. 200 0.1 at 0.21 MHZ 0.5 and 1.0applied 2.0 reverse 5.0 10voltage 20 of50 2012-0 Figure 9. “On” Voltages 0 Amps 40 RVC for VCE(sat) 120 -55 to +150 ℃/W PF ℃ - 65 to +175 ℃ -1.0 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT -1.50.50 0.70 500 1.0 k -2.5 0.85 0.9 0.5 0.92 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) Volts mAmps 10 RVB for VBE -2.0 VCE(sat) @ IC/IB = 10 2- Thermal Resistance From to Ambient IC,Junction COLLECTOR CURRENT (mA) 30 -55 to +125 -0.5 VF Maximum Forward Voltage at 1.0A DC Amps TSTG VBE(on) @ VCE = 10 V 0.4 Figure 8. Current–Gain 1.0 Bandwidth Product IO IFSM COEFFICIENT (mV/° C) Figure 7. Capacitances Maximum Average Forward Rectified Current 5.0 k 10 k 20 k MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS f T, CURRENT-GAIN BANDWIDTH PRODUCT (MHz) CAPACITANCE (pF) 10 500 1.0 k 2.0 k RS, SOURCE RESISTANCE (OHMS) • Figure 5. Frequency plastic, SOD-123HEffects • Case : Molded , • Terminals :Plated terminals, solderable per MIL-STD-750 Method 2026 0.012(0.3) Typ. 2.0 50 100 • Polarity : Indicated by cathode band 20 • Mounting Position : Any Ceb • Weight : Approximated 0.011 gram 0.146(3.7) 0.130(3.3) 4.0 f, FREQUENCY (kHz) Epoxy : UL94-V0 rated flame retardant 30 SOD-123H 500 Figure 10. Temperature Coefficients WILLAS ELECTRONIC CORP. WILLAS FM120-M+ MMBT2222ADW1T1 THRU Dual General Transistor 1.0A SURFACE MOUNTPurpose SCHOTTKY BARRIER RECTIFIERS -20V- 200V FM1200-M+ Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to SOT–363 optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. .087(2.20) • Silicon epitaxial planar chip, metal silicon junction. .071(1.80) of • Lead-free parts meet environmental standards 0.012(0.3) Typ. .004(0.10)MIN. .054(1.35) .045(1.15) MIL-STD-19500 /228 0.146(3.7) 0.130(3.3) • RoHS product for packing code suffix "G" 0.071(1.8) 0.056(1.4) Halogen free product for packing code suffix "H" • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any.030(0.75) .021(0.55) • Weight : Approximated 0.011 gram 0.040(1.0) 0.024(0.6) .096(2.45) .071(1.80) Mechanical data 0.031(0.8) Typ. Dimensions in inches and (millimeters) .010(0.25) .003(0.08) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS .056(1.40) RATINGS Marking Code SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT .004(0.10)MAX. VRRM Maximum Recurrent Peak Reverse Voltage 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Volts Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 Volts Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 Volts IO .016(0.40) Peak Forward Surge Current 8.3 ms single half sine-wave IFSM Maximum Average Forward Rectified Current 12 20 superimposed on rated load (JEDEC method) .004(0.10) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 1.0 30 .043(1.10) .032(0.80) Ratings at 25℃ ambient temperature unless otherwise specified. .047(1.20) Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% 40 120 -55 to +125 Amps Amps ℃/W PF -55 to +150 ℃ - 65 to +175 TSTG ℃ FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT SYMBOL Dimensions in inches and (millimeters) CHARACTERISTICS Maximum Forward Voltage at 1.0A DC VF Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.5 0.9 0.92 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-0 Volts WILLAS ELECTRONIC CORP. mAmps WILLAS FM120-M+ MMBT2222ADW1T1 Dual General Transistor 1.0A SURFACE MOUNTPurpose SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE THRU FM1200-M+ Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. 0.146(3.7) high efficiency. • Low power loss, Device PN Packing 0.130(3.3) voltage drop. • High current capability, low forward (1) MMBT2222ADW1T1 G ‐WS Tape&Reel: 3 Kpcs/Reel surge capability. • High • Guardring for overvoltage protection. Note: (1) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Ordering Information: 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS specification herein, to make corrections, modifications, enhancements or other Ratings at 25℃ ambient temperature unless otherwise specified. changes. WILLAS or anyone on its behalf assumes no responsibility or liability Single phase half wave, 60Hz, resistive of inductive load. load, derate current by 20% for any errors or inaccuracies. Data sheet specifications and its information For capacitive SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U RATINGS contained are intended to provide a product description only. "Typical" parameters Marking Code 12 13 14 15 16 18 10 115 120 which may be included on WILLAS data sheets and/ or specifications can 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage V VRRM V 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS and do vary in different applications and actual performance may vary over time. V Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC WILLAS does not assume any liability arising out of the application or A Maximum Average Forward Rectified Current IO 1.0 use of any product or circuit. Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM A on rated load (JEDEC method) superimposed ℃ 40 Typical Thermal Resistance (Note 2) RΘJA WILLAS products are not designed, intended or authorized for use in medical, 120 Typical Junction Capacitance (Note 1) CJ life‐saving implant or other applications intended for life‐sustaining or other related -55 to +125 -55 to +150 Operating Temperature Range TJ 65 to +175 Storage applications where a failure or malfunction of component or circuitry may directly Temperature Range TSTG or indirectly cause injury or threaten a life without expressed written approval CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U V 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 of WILLAS. Customers using or selling WILLAS components for use in 0.5 Maximum Average Reverse Current at @T A=25℃ IR m such applications do so at their own risk and shall agree to fully indemnify WILLAS 10 @T A=125℃ Rated DC Blocking Voltage Inc and its subsidiaries harmless against all claims, damages and expenditures. NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-0 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP.