WILLAS FM120-M+ MMBT2907ADW1T1 THRU Transistor Dual General 1.0A SURFACE MOUNT Purpose SCHOTTKY BARRIER RECTIFIERS -20V- 200V FM1200-M+ Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. Featrues • High current capability, low forward voltage drop. declare the material of product compliance with RoHS requirements. High surgethat capability. z•We Guardring for overvoltage protection. z•Pb-Free package is available Ultra high-speed switching. •RoHS product for packing code suffix ”G” • Silicon epitaxial planar chip, metal silicon junction. Halogen free product for packing code suffix “H” • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 6 z Moisture Sensitivity MIL-STD-19500 /228Level 1 MAXIMUM RATINGS • RoHS product for packing code suffix "G" Value Halogen free product for packing code suffix "H" Rating Symbol 2907 2907A Mechanical data Collector–Emitter Voltage V CEO –40 –60 retardant • Epoxy : UL94-V0 rated flame –60 Collector–Base Voltage V CBO plastic, SOD-123H • Case : Molded –600 1 2 Vdc 0.040(1.0) 0.024(0.6) Vdc 0.031(0.8) Typ. (3) (2) Q 1 in inches and (millimeters) Dimensions Q2 Unit Max • WeightCharacteristic : Approximated 0.011 gram Symbol 225 mW Total Device Dissipation FR– 5 Board, (1) PD (4) (5) (6) TA = 25°C MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Derate aboveambient 25°C temperature unless otherwise specified. 1.8 mW/°C Ratings at 25℃ Thermal Junction to Ambient RθJA 556 °C/W Single phaseResistance, half wave, 60Hz, resistive of inductive load. Total Device Dissipation PD 300 mW For capacitive load, derate current by 20% Alumina Substrate, (2) T A = 25°C SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U RATINGS ORDERING INFORMATION Derate above 25°C 2.4 mW/°C Marking Code 12 13 14 15 16 18 10 115 120 Thermal Resistance, Junction to Ambient RθJA 417 Device Shipping 20 30 °C/W 40 50 60 80 Marking 100 150 200 Maximum Recurrent Peak Reverse Voltage Vo VRRM Junction and Storage Temperature TJ , Tstg –55 to +150 °C Vo 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS 2F MMBT2907ADW1T1 3000 Units/Reel Vo Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC DEVICE MARKING IO Peak Forward Surge Current 8.3 ms single half sine-wave IFSM otherwise noted.) ELECTRICAL CHARACTERISTICS (TA = 25°C unless 1.0 30 MMBT2907ADW1T1 = 2F superimposed on rated load (JEDEC method) Characteristic Typical Thermal Resistance (Note 2) RΘJA Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage(3) Storage Temperature Range TSTG Symbol -55 to +125 V A A Max 40 Unit 120 ℃ P -55 to +150 ℃ - 65 to +175Vdc — (BR)CEO ℃ MMBT2907 –40 MMBT2907A –60FM150-MH — FM120-MH FM130-MH FM140-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN CHARACTERISTICS SYMBOL Vo 0.9 Maximum Forward Voltage at 1.0A DC Collector–Emitter Breakdown Voltage(I C = –10 µAdc, V (BR)CBO –60 Vdc 0.85 0.92 VF I E = 0) 0.50 0.70— IR Cutoff Current( V CB = –30Vdc, I BE(OFF) = –0.5Vdc) @T A=125℃ RatedCollector DC Blocking Voltage Collector Cutoff Current ( V CB = –50Vdc, I E = 0) NOTES: V (BR)EBO I CEX I CBO –5.0 — MMBT2907 MMBT2907A — — MMBT2907 MMBT2907A Base Current( V CE = –30Vdc, V EB(off)= –0.5Vdc ) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%. — — — 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. Min (I C = –10 mAdc, I B = 0) Emitter–Base Breakdown Voltage(I = –10 µAdc, I C = 0) Maximum Average Reverse Current at @TE A=25℃ (1) 0.031(0.8) Typ. mAdc Maximum Average Forward Rectified Current 4 0.071(1.8) 0.056(1.4) 3 THERMAL CHARACTERISTICS Position : Any • Mounting 5 SOT-363 Unit , Emitter–Base Voltage V EBO –5.0MIL-STD-750 Vdc • Terminals :Plated terminals, solderable per Method 2026 I C Collector Current — Continuous • Polarity : Indicated by cathode band 0.012(0.3) Typ. 2- Thermal Resistance From Junction to Ambient ( V CB = –50Vdc, I E = 0, T A =125°C ) 2012-06 2012-0 IB — 0.5 Vdc –50 10 nAdc µAdc –0.020 –0.010 –20 –10 –50 mA nAdc WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ MMBT2907ADW1T1 THRU Transistor Dual General Purpose 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V FM1200-M+ Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued) surface mounted application in order to • Low profile optimize boardCharacteristic space. Symbol • Low power loss, high efficiency. ON CHARACTERISTICS Min Max Unit 0.146(3.7) 0.130(3.3) High current capability, low forward voltage drop. •DC Current Gain surge capability. •(IHigh MMBT2907 C = –0.1mAdc, V CE = –10 Vdc) • Guardring for overvoltage protection. MMBT2907A • Ultra high-speed switching. (I C =–1.0mAdc, V CE = –10 Vdc) MMBT2907 • Silicon epitaxial planar chip, metal silicon junction. MMBT2907A of • Lead-free parts meet environmental standards hFE MMBT2907 MMBT2907A free product for packing code suffix "H"MMBT2907 (IHalogen C = –150mAdc, V CE =–10 Vdc)(3) Mechanical data MMBT2907A (I = –500mAdc, V =–10 Vdc)(3) MMBT2907 C : UL94-V0CErated flame retardant • Epoxy MMBT2907A • Case : Molded plastic, SOD-123H Collector–Emitter Saturation Voltage(3) , • Terminals :Plated terminals, solderable per MIL-STD-750 (I C = –150mAdc, I B = –15 mAdc) Method 2026 (I C = –500 mAdc, I B = –50 mAdc) •Base–Emitter Polarity : Indicated byVoltage(3) cathode band Saturation Position AnymAdc) •(IMounting I B = :–15 C = –150mAdc, (I = –500mAdc, I = –50 B C • Weight : Approximated mAdc) 0.011 gram –– 35 75 50 100 75 100 –– 100 30 50 (IMIL-STD-19500 = –10Vdc) C = –10 mAdc, V CE /228 • RoHS product for packing code suffix "G" –– –– –– –– –– –– –– 300 –– –– 0.071(1.8) 0.056(1.4) 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. VCE(sat) Vdc –– –– V 0.012(0.3) Typ. 0.031(0.8) Typ. –0.4 –1.6 Dimensions in inches and (millimeters) Vdc BE(sat) –– –– –1.3 –2.6 200 –– MHz –– 8.0 pF SMALL–SIGNAL CHARACTERISTICS MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Current–Gain — Bandwidth Product(3),(4) Ratings at 25℃ ambient temperature unless otherwise specified. (I C = –50mAdc, V CE= –20Vdc, f = 100MHz) Single phase half wave, 60Hz, resistive of inductive load. Output Capacitance For capacitive load, derate current by 20% (V CB = –10 Vdc, I E = 0, f = 1.0 MHz) RATINGS Input Capacitance f C obo SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Marking Code (V EB = –2.0Vdc, I C = 0, f = 1.0 MHz) Maximum Recurrent Peak Reverse Voltage SWITCHING CHARACTERISTICS Maximum RMS Voltage VRRM 12 20 13 30 VRMS 14 21 C 14 ibo 40 15 50 28 t40 on td tr 50 Turn–On TimeVoltage Maximum DC Blocking T 20 30 (V CC = –30 Vdc, VDC Delay Time Maximum Average Forward Rectified Current I C = –150 mAdc, I B1IO= –15 mAdc) Rise Time Peak Forward Surge Current 8.3 ms single half sine-wave Fall Time (V CC = –6.0 Vdc, IFSM superimposed on rated Storage Timeload (JEDEC method) I C = –150 mAdc,I B1 = I B2 = 15 mAdc) Turn–OffResistance Time Typical Thermal (Note 2) RΘJA CJ 3. Pulse Test: PulseRange Width < 300 µs, Duty Cycle < T 2.0%. Operating Temperature J Typical Junction Capacitance (Note 1) 35 tf ts t off -55 to +125 –– 30 16 60 18 80 42 56 — 60 45 80 — 10 1.0 — 40 — 30 30 — 80 40 100 — 120 pF 10 100 115 150 120 200 70 105 140 100 ns 150 200 ns -55 to +150 - 65 to +175 4. f T Temperature is defined asRange the frequency at which |h f e | extrapolates to unity. Storage TSTG CHARACTERISTICS Z o = 50 Ω Maximum Average Reverse Current at @T –30A=25℃ V PRF = 150 PPS Rated DC Blocking Voltage RISE TIME <2.0 ns NOTES: SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH INPUT VF INPUT Voltage at 1.0A DC Maximum Forward @T A=125℃ 200 P.W. <200 ns IR 1.0 k 1- Measured at 1 MHZ and applied reverse voltage of 4.0TO VDC. OSCILLOSCOPE 0 RISE TIME < 5.0 ns 2- Thermal Resistance From Junction to Ambient 50 –16 V 200 ns Figure 1. Delay and Rise Time Test Circuit 2012-06 2012-0 0.50 0.70 Z O= 50 Ω PRF = 150 PPS RISE TIME <2.0 ns P.W. < 200 ns +15 V 1.0 k 1.0 k 0 50 –30 V 0.85 0.5 10 0.9 0.92 –6.0 V 37 TO OSCILLOSCOPE RISE TIME < 5.0 ns 1N916 200 ns Figure 2. Storage and Fall Time Test Circuit WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ MMBT2907ADW1T1 THRU Transistor Dual General Purpose 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V FM1200-M+ Pb Free Produc SOD-123+ PACKAGE Package outline Features h FE , NORMALIZED CURRENT GAIN • Batch process design, excellent power dissipation offers better reverse leakage current and thermalTYPICAL resistance.CHARACTERISTICS • Low profile surface mounted application in order to optimize board space. 3.0 efficiency. • Low power loss, –1.0 V V CE =high 2.0 current capability, • High V CE = –10 V low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. 1.0 high-speed switching. • Ultra • Silicon epitaxial planar chip, metal silicon junction. 0.7 • Lead-free parts meet environmental standards of • 0.146(3.7) 0.130(3.3) T J = 125°C 25°C 0.071(1.8) 0.056(1.4) –55°C 0.3 Mechanical data : UL94-V0 rated flame retardant • Epoxy 0.2 –0.1 –0.2 –0.3 –0.5 –0.7 –1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 : Molded plastic, SOD-123H • Case 0.031(0.8) Typ. , I C , COLLECTOR CURREN (mA) • Terminals :Plated terminals, solderable per MIL-STD-750 VOLTAGE (VOLTS) V CE , COLLECTOR– EMITTER –0.8 0.040(1.0) 0.024(0.6) –50 –70 –100 –500 0.031(0.8) Typ. –100 mA mA I C = –1.0 mA RATINGS –10 MAXIMUM AND ELECTRICAL CHARACTERISTICS –500 mA Ratings –0.6 at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% –0.4 RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 Maximum RMS Voltage VRMS 14 21 28 35 Maximum DC Blocking Voltage –0.005–0.01 –0.02 –0.03 –0.05 –0.7 –0.1 30 –1.0 40 –2.0 –3.0 50 VDC –0.2 –0.320 –0.5 –0.7 –0.2 0 16 60 18 80 42 56 –5.0 60 –7.0 –10 80 IOI B , BASE CURRENT (mA) Figure 4. Collector Saturation Region Peak Forward Surge Current 8.3 ms single half sine-wave IFSM superimposed on rated load (JEDEC method) 300 CJ Typical Junction Capacitance (Note 1) 200 V CC = –30 TJ V Operating Temperature Range @T A=125℃ 100 70 50 IR 300.50 20 10 10 NOTES:7.0 7.0 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 5.0 2.0 V 5.0 2- Thermal 3.0 Resistance From Junction to Ambient 3.0 –5.0–7.0 –10 –20 –30 –50 –70 –100 I C , COLLECTOR CURRENT Figure 5. Turn–On Time 2012-06 2012-0 115 150 120 200 70 105 140 –50 150 200 –20 100 –30 - 65 to +175 tf V CCto = –30 V -55 +150 I C /I B = 10 I B1 = I B2 T J = 25°C SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF Maximum 20 Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage t d@ V BE(off) = 0 V 200 -55 to +125 t, TIME (ns) t, TIME (ns) CHARACTERISTICS Maximum Forward Voltage at 1.0A DC 30 40 120 300 I C /I B = 10 TSTG T J = 25°C 100Temperature Range tr Storage 70 50 RΘJA Typical Thermal Resistance (Note 2) 10 100 1.0 30 Maximum Average Forward Rectified Current –300 Dimensions in inches and (millimeters) Marking Code –200 Figure 3. DC Current Gain • Polarity : Indicated by cathode band Mounting Position : Any •–1.0 • Weight : Approximated 0.011 gram 0.012(0.3) Typ. MIL-STD-19500 /228 0.5 RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Method 2026 SOD-123H –200 –300 –500 –5.0–7.0 –10 0.70 0.85 0.9 0.92 t ’ s = t s – 1/8 t f0.5 10 –20 –30 –50 –70 –100 –200 –300 –500 I C , COLLECTOR CURRENT (mA) Figure 6. Turn–Off Time WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ MMBT2907ADW1T1 THRU Transistor Dual General Purpose 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V FM1200-M+ Pb Free Produc SOD-123+ PACKAGE Package outline Features TYPICAL SMALL–SIGNAL CHARACTERISTICS power dissipation offers • Batch process design, excellent better reverse leakage current and thermal resistance. NOISE FIGURE SOD-123H • Low profile surface mounted application in order V CE =to10 Vdc, T A = 25°C –500 µA, R = 560 Ω MIL-STD-19500 /228 S µA, R S= 2.7 k Ω code suffix "G" •4.0RoHS product for–50packing –100 µA, R S= 1.6 k Ω Halogen free product for packing code suffix "H" Mechanical data RS=OPTIMUM SOURCE RESISTANCE 2.0 0.146(3.7) 0.130(3.3) f=1.0 kHz 8.0 0.071(1.8) 0.056(1.4) I C = –50µA –100 µA –500 µA –1.0 mA 6.0 4.0 0.040(1.0) 0.024(0.6) 2.0 • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H 0 , • 0.01 Terminals solderable 0.02 0.05:Plated 0.1 0.2 terminals, 0.5 1.0 2.0 5.0 10 per 20 MIL-STD-750 50 100 0.031(0.8) Typ. 0 50 Method 2026 f, FREQUENCY (kHz) Polarity : Indicated byFrequency cathode band Figure 7. Effects f T , CURRENT– GAIN — BANDWIDTH PRODUCT (MHz) 7.0 Maximum Recurrent Peak Reverse Voltage VRRM Maximum 3.0RMS Voltage VRMS 14 Maximum DC Blocking Voltage VDC 20 2.0 Maximum Average Forward Rectified –0.1 –0.2 –0.3 –0.5 –1.0 Current –2.0 –3.0 –5.0 –10IO REVERSE VOLTAGE (VOLTS) Peak Forward Surge Current 8.3 ms single half sine-wave IFSM 13 30 21 30 –20 –30 V BE(sat) @ I C /I B = 10 CHARACTERISTICS Rated DC Blocking Voltage VF @T A=125℃ IR NOTES: –0.2 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. V CE(sat) @ I C /I B = 10 2- Thermal Resistance From Junction to Ambient –0.5 –1.0 –2.0 80 –5.0 –10 60 40 30 20 –1.0 T J15 = 25°C 16 50 60 14 40 18 80 10 100 115 150 120 200 28 35 42 56 70 105 140 40 50 60 80 100 150 200 –2.0 –5.0 –201.0 –50 –10 –100 –200 I C , COLLECTOR CURRENT (mA) 30 –500 –1000 40 120 -55 to +150 65for to V+175 R- θVC CE(sat) –0.5 V BE(on) @ V CESYMBOL = –10 V FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Maximum Average Reverse Current at @T A=25℃ – 0.4 100 0 TSTG Maximum Forward Voltage at 1.0A DC 2012-06 50 k 200 -55 to +125 COEFFICIENT (mV/ ° C) V, VOLTAGE (VOLTS) Storage –0.8Temperature Range 2012-0 20 k 300 +0.5 TJ T J = 25°C Range Operating Temperature 0 –0.1 –0.2 10 k Figure 10. Current–Gain — Bandwidth Product CJ –1.0 Typical Junction Capacitance (Note 1) 5.0 k 400 RΘJA Typical Thermal Resistance (Note 2) 2.0 k VCE=–20 V FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH RATINGS C cb 12 20 –0.6 1.0 k Dimensions in inches and (millimeters) superimposed on rated load Figure (JEDEC method) 9. Capacitances 500 C eb MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Marking 5.0 Code 200 Figure 8. Source Resistance Effects Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. 10 For capacitive load, derate current by 20% C, CAPACITANCE(pF) 100 0.031(0.8) Typ. R S, SOURCE RESISTANCE ( Ω ) • • Mounting Position : Any •30Weight : Approximated 0.011 gram 20 0.012(0.3) Typ. 10 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) optimize board space. • Low power loss, high efficiency. •10High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. 8.0 • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. I = –1.0 mA, R S= 430 Ω 6.0 standards of • Lead-free parts Cmeet environmental –20 –50 –100 –200 0.50 – 1.0 0.70 0.85 0.9 0.92 0.5 10 –1.5 R θVB for V BE –2.0 –2.5 –500 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 11. “On” Voltage Figure 12. Temperature Coefficients –500 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ MMBT2907ADW1T1 THRU Transistor Dual General Purpose 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V FM1200-M+ Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. to • Low profile surface mounted application in orderSOT-363 SOD-123H optimize board space. 0.146(3.7) 0.130(3.3) .054(1.35) .045(1.15) .004(0.10)MIN. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. .087(2.20) • Ultra high-speed switching. .071(1.80) junction. • Silicon epitaxial planar chip, metal silicon • Lead-free parts meet environmental standards of MIL-STD-19500 /228 • RoHS product for packing code suffix "G" 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Halogen free product for packing code suffix "H" 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any .030(0.75) • Weight : Approximated 0.011 gram 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. Dimensions in inches and (millimeters) .010(0.25) .003(0.08) .021(0.55) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% .056(1.40) .047(1.20) RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 Maximum RMS Voltage 14 40 15 50 16 60 18 80 10 100 115 150 120 200 VRMS 14 21 28 35 42 56 70 105 140 Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 Maximum Average Forward Rectified Current IO IFSM .004(0.10)MAX. Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) .016(0.40) CJ TJ .004(0.10) TSTG Typical Junction Capacitance (Note 1) Operating Temperature Range Storage Temperature Range CHARACTERISTICS Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage NOTES: 40 120 -55 to +125 -55 to +150 - 65 to +175 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF Maximum Forward Voltage at 1.0A DC 1.0 30 .043(1.10) .032(0.80) .071(1.80) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 .096(2.45) Mechanical data @T A=125℃ 0.50 0.70 0.85 0.9 0.92 0.5 IR 10 Dimensions in inches and (millimeters) 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-0 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ MMBT2907ADW1T1 THRU 1.0A SURFACE MOUNTPurpose SCHOTTKY BARRIER Transistor RECTIFIERS -20V- 200V Dual General SOD-123+ FM1200-M+ Pb Free Product PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. 0.146(3.7) high efficiency. • Low power loss, Device PN Packing 0.130(3.3) voltage drop. • High current capability, low forward (1) MMBT2907ADW1T1 G ‐WS Tape&Reel: 3 Kpcs/Reel surge capability. • High Guardring for overvoltage protection. • Note: (1) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Ordering Information: 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS specification herein, to make corrections, modifications, enhancements or other Ratings at 25℃ ambient temperature unless otherwise specified. changes. WILLAS or anyone on its behalf assumes no responsibility or liability Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% for any errors or inaccuracies. Data sheet specifications and its information SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U RATINGS contained are intended to provide a product description only. "Typical" parameters Marking Code 12 13 14 15 16 18 10 115 120 20 30 40 50 60 80 100 150 200 Maximumwhich may be included on WILLAS data sheets and/ or specifications can Recurrent Peak Reverse Voltage V VRRM Vo 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage V RMS and do vary in different applications and actual performance may vary over time. Vo Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC WILLAS does not assume any liability arising out of the application or A Maximum Average Forward Rectified Current IO 1.0 use of any product or circuit. Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM A on rated load (JEDEC method) superimposed ℃ 40 Typical Thermal Resistance (Note 2) RΘJA WILLAS products are not designed, intended or authorized for use in medical, P 120 Typical Junction Capacitance (Note 1) CJ -55 to +125 -55 to +150 Operatinglife‐saving implant or other applications intended for life‐sustaining or other related Temperature Range TJ - 65 to +175 Storage Temperature Range TSTG applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U V 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 of WILLAS. Customers using or selling WILLAS components for use in 0.5 Maximum Average Reverse Current at @T A=25℃ IR m 10 @T A=125℃ Rated DCsuch applications do so at their own risk and shall agree to fully indemnify WILLAS Blocking Voltage NOTES: Inc and its subsidiaries harmless against all claims, damages and expenditures. 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-0 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP.