WILLAS FM120-M SE2303 THRU FM1200-M SOT-23 Plastic-Encapsulate MOSFETS 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produ SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. P-Channel 30-V(D-S) MOSFET protection. for overvoltage • Guardring • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. FEATURE • Lead-free parts meet environmental standards of TrenchFET Power MOSFET MIL-STD-19500 /228 • RoHS product for packing code suffix "G" 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) SOT-23 Halogen free product for packing code suffix "H" Mechanical data APPLICATIONS • Epoxy : UL94-V0 rated flame retardant z Load• Case Switch for Portable Devices : Molded plastic, SOD-123H , z DC/DC Converter • Terminals :Plated terminals, solderable per MIL-STD-750 z 1. GATE 0.040(1.0) 0.024(0.6) 2. SOURCE 3. DRAIN 0.031(0.8) Typ. Method is 2026 Pb-Free package available • Polarity : Indicated by cathode band RoHS product for packing code suffix ”G” 0.031(0.8) Typ. Dimensions in inches and (millimeters) • Mounting Position : Any Halogen free product for packing code suffix “H” • Weight : Approximated 0.011 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ MARKING: S3 ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200- Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 Maximum RMS Voltage VRMS 14 21 28 VDC 20 30 40 Maximum DC Blocking Voltage 14 40 15 50 16 60 18 80 35 42 50 60 IO Maximum Average Forward Rectified Current superimposed on rated load (JEDEC method) Parameter IFSM RΘJA Typical Thermal Resistance (Note 2) Drain-Source Voltage Typical Junction Capacitance (Note 1) Operating Temperature Gate-Source Voltage Range Storage Temperature Range VDS TJ VGS TSTG Continuous Drain Current Continuous Source-Drain Diode Current CHARACTERISTICS Maximum Average Reverse Current at @T A=25℃ Thermal Resistance from Junction to Ambient(t≤5s)IR Rated DC Blocking Voltage Junction Temperature @T A=125℃ NOTES: Storage Temperature 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 120 200 56 70 105 140 80 100 150 200 Value -55 to +125 ID -30 ±20 -1.9 40 120 Unit V -55 to +150 - 65 to +175 A IS FM130-MH FM140-MH FM150-MH -0.83 FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M SYMBOL FM120-MH VF Maximum Power Forward Dissipation Voltage at 1.0A DC Maximum Symbol CJ 115 150 1.0 30 noted) Maximum ratings (Ta=25℃ unless otherwise Peak Forward Surge Current 8.3 ms single half sine-wave 10 100 PD 0.50 0.70 0.35 RθJA 357 TJ 150 TSTG -50 ~+150 0.85 0.5 10 W 0.9 ℃/W 0.92 ℃ 2- Thermal Resistance From Junction to Ambient 2012-06 2012-10 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M SE2303 SOT-23 Plastic-Encapsulate MOSFETS 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Package outline Electrical characteristics Features (Ta=25℃ unless otherwise noted) • Batch process design, excellent power dissipation offers Static FM1200-M Pb Free Prod SOD-123+ PACKAGE Parameter THRU better reverse leakage current and thermal resistance. Symbol Test Condition Min • Low profile surface mounted application in order to TypSOD-123H Max Units optimize board space. • Low power loss, high efficiency. Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID =-250µA • High current capability, low forward voltage drop. Gate-Source Threshold Voltage VGS(th) VDS =VGS, ID =-250µA capability. • High surge • Guardring for overvoltage protection. Gate-Source Leakage I VDS =0V, VGS =±20V • Ultra high-speed switching. GSS Zero Gate Voltage Drain Current IDSS silicon VDS =-30V, VGS =0V epitaxial planar chip, metal junction. • Silicon • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) -30 -1 V -3 ±100 nA 0.071(1.8) -1 µA VGS =-10V, ID = -1.9A 0.158 0.190 • RoHS product for packing code suffix "G" VGS =-4.5V, ID = -1.4A 0.275 0.330 MIL-STD-19500 /228a Drain-Source On-State Resistance RDS(on) Halogen free product for packing code suffix "H" a Forward Transconductance Mechanical b gfs data 1 VDS =-5V, ID =-1.9A Method 2026 Reverse Transfer Capacitance S Gate-Source Charge Gate-Drain Charge 0.040(1.0) 0.024(0.6) Qgs 155 0.031(0.8) Typ. 25 Dimensions in inches and (millimeters) VDS =-15V,VGS =-10V,ID =-1.9A VDS =-15V,VGS =-4.5V,ID=-1.9A Qgd Ratings at 25℃ ambient temperature unless otherwise specified. Gate Resistance = f 1MHz g Single phase half wave, 60Hz, resistive of R inductive load. capacitive Turn-On Timeload, derate current by 20%td(on) ForDelay Rise Time tr Marking Code Turn-Off Delay Recurrent Time Maximum Peak Reverse Voltage td(off) Fall Time Maximum RMS Voltage tf Maximum Blocking Voltage Turn-On Delay DC Time td(on) Maximum Average Forward Rectified Current Rise Time tr Peak Forward Surge Current 8.3 ms single half sine-wave Turn-Off Delay Time td(off) superimposed on rated load (JEDEC method) Fall Time tf Typical Thermal Resistance (Note 2) Typical Junction (Note 1) Drain-source Body Capacitance diode characteristics IS a CHARACTERISTICS Pulse Diode Forward Current ISM Body Diode Voltage VSD Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Notes : Rated DC Blocking Voltage @T A=125℃ 2 4 nC 1 1.7 RL=10Ω, ID12=-1.5A,13 14 40 20 30 VRRM=-10V,Rg=1Ω V 8.5 17 4 8 Ω GEN 11 15 50 18 16 11 60 18 18 80 10 100 115 150 120 200 VRMS 14 21 28 35 428 56 16 70 105 140 VDC 20 30 40 50 60 36 80 44 100 150 200 37 45 VDD IO =-15V, 1.0 1230 R L=10Ω, ID =-1.5A, IFSM VGEN=-4.5V,Rg=1Ω RΘJA TJ Storage Temperature Range Current 8 VDD=-15V, SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200 CJ Operating Temperature Range Continuous Source-Drain Diode 4 0.6 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATINGS 0.031(0.8) Typ. pF 35 Crss • Polarity : Indicated by cathode band Mounting Position : Any • Total Gate Charge Qg • Weight : Approximated 0.011 gram 0.056(1.4) Ω Dynamic • Epoxy : UL94-V0 rated flame retardant Input Capacitance Ciss • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per =-15V,VGS =0V,f =1MHz VDSMIL-STD-750 Output Capacitance Coss 0.012(0.3) Typ. 9 40 ns 18 14 120 -55 to +125 -55 to +150 - 65 to +175 -1.75 TSTG T C=25℃ A SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH -10 FM1100-MH FM1150-MH FM1200 VF IS=-1.5A IR 0.50 0.70 -0.8 0.5 0.85 -1.2 V 0.9 0.92 10 a. Pulse Test : Pulse Width ≤300µs, Duty Cycle ≤2%. NOTES: b. Guaranteed by at design, notapplied subject to production 1- Measured 1 MHZ and reverse voltage of 4.0testing. VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-10 WILLAS ELECTRONIC CO WILLAS ELECTRONIC CORP. WILLAS FM120-M SE2303 THRU FM1200-M SOT-23 Plastic-Encapsulate MOSFETS 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Prod SOD-123+ PACKAGE Package outline Typical Characteristics Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to optimize board space. Output Characteristics -1.0 Low power loss, • -10V high efficiency. -8.0V -6.0V Ta=25℃ High current capability, low forward voltage drop. • Pulsed -4.5V • High surge capability. -0.8 • Guardring for overvoltage protection. • Ultra high-speed switching. -4.0V • Silicon epitaxial planar chip, metal silicon junction. -0.6 • Lead-free parts meet environmental standards of MIL-STD-19500 /228 -3.5V • RoHS product for packing code suffix "G" -0.4 Halogen free product for packing code suffix "H" -20 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. Pulsed Mechanical data DRAIN CURRENT -8 -0 0.071(1.8) 0.056(1.4) ID ID DRAIN CURRENT -12 VGS=-3.0V 0.040(1.0) 0.024(0.6) -0.2 • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 -0.0 -4 -0 -1 -2 -3 -4 Method 2026 DRAIN TO SOURCE VOLTAGE VDS -5 Ta=25℃ 0.031(0.8) Typ. -0 0.031(0.8) Typ. -1 -2 GATE TO SOURCE VOLTAGE (V) • Polarity : Indicated by cathode band • Mounting Position : Any RDS(ON) —— ID 0.011 gram • Weight : Approximated 300 -3 VGS (V) Dimensions in inches and (millimeters) RDS(ON) —— 500 VGS Ta=25℃ MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Pulsed Pulsed Ratings at 25℃ ambient temperature unless otherwise specified.400 Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% 200 RATINGS Marking Code VGS=-4.5V VRRM Maximum Recurrent Peak Reverse Voltage 150 VRMS Maximum RMS Voltage VGS=-10V Maximum DC Blocking Voltage 100 Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave 50 -0 -4 -8 -12 superimposed on rated load (JEDEC method) DRAIN CURRENT ID Typical Thermal Resistance (Note 2) -16 (A) VDC IO IFSM -20 RΘJA Typical Junction Capacitance (Note 1) CJ Operating Temperature Range IS —— VSD Storage Temperature Range -10 TJ IS (A) 12 20200 13 30 14 21 20 30 100 0 -0 14 40 16 60 18 80 10 100 115 150 120 200 28 35 42 56 70 105 140 40 50 60 80 100 150 200 ID=-1.9A -4 15 50 -8 1.0 30 -12 -16 VGS 40 (V) GATE TO SOURCE VOLTAGE 120 -55 to +125 -20 -55 to +150 - 65 to +175 TSTG Ta=25℃ Pulsed CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200- VF Maximum Forward Voltage at 1.0A DC SOURCE CURRENT 300 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200 ON-RESISTANCE RDS(ON) (mΩ) (mΩ) 250 ON-RESISTANCE RDS(ON) Transfer Characteristics Ta=25℃ (A) (A) -16 SOD-123H -3 Maximum Average Reverse Current at @T A=25℃ IR @T A=125℃ Rated DC Blocking Voltage 0.50 0.70 0.85 0.9 0.5 0.92 10 NOTES: -1 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient -0.3 -0.1 -0.4 -0.6 -0.8 -1.0 SOURCE TO DRAIN VOLTAGE 2012-06 2012-10 -1.2 -1.4 VSD (V) WILLAS ELECTRONIC CO WILLAS ELECTRONIC CORP. WILLAS FM120-M SE2303 THRU FM1200-M SOT-23 Plastic-Encapsulate MOSFETS 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produ SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Outline Drawing SOT-23 • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) Halogen free product for packing code suffix "H" .122(3.10) • Epoxy : UL94-V0 rated flame retardant .106(2.70) Mechanical data .063(1.60) .047(1.20) 0.071(1.8) 0.056(1.4) .006(0.15)MIN. MIL-STD-19500 /228 • RoHS product for packing code suffix "G" • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.012(0.3) Typ. 0.031(0.8) Typ. 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200- Marking Code .080(2.04) Maximum RMS Voltage .070(1.78) Maximum DC Blocking Voltage Maximum Recurrent Peak Reverse Voltage Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) 13 30 14 40 15 50 16 60 VRMS 14 21 28 35 42 VDC 20 30 40 50 60 IO IFSM RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range VRRM 12 20 CHARACTERISTICS 80 100 80 100 .003(0.08) 56 70 115 150 120 200 105 140 150 200 40 120 -55 to +125 -55 to +150 - 65 to +175 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage TSTG .004(0.10)MAX. .008(0.20) 18 10 1.0 30 @T A=125℃ IR NOTES: .020(0.50) 2- Thermal Resistance From Junction to Ambient .012(0.30) 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 0.50 0.70 0.85 0.9 0.5 .055(1.40) .035(0.89) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% .083(2.10) .110(2.80) Dimensions in inches and (millimeters) 0.92 10 Dimensions in inches and (millimeters) 2012-06 2012-10 WILLAS ELECTRONIC CO Rev.D WILLAS ELECTRONIC CORP. SE2303 SOT-23 Plastic-Encapsulate MOSFETS Ordering Information: Device PN SE2303‐T(1)G(2)‐WS Packing Tape&Reel: 3 Kpcs/Reel Note: (1) Packing code, Tape & Reel (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. WILLAS or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" parameters which may be included on WILLAS data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. WILLAS does not assume any liability arising out of the application or use of any product or circuit. WILLAS products are not designed, intended or authorized for use in medical, life‐saving implant or other applications intended for life‐sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of WILLAS. Customers using or selling WILLAS components for use in such applications do so at their own risk and shall agree to fully indemnify WILLAS Inc and its subsidiaries harmless against all claims, damages and expenditures. 2012-10 WILLAS ELECTRONIC CORP.