SPD30N08S2-22 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS • Enhancement mode R DS(on) 75 ID • 175°C operating temperature V 21.5 mΩ 30 • Avalanche rated A P- TO252 -3-11 • dv/dt rated Type SPD30N08S2-22 Package Ordering Code P- TO252 -3-11 Q67060-S7413 Marking 2N0822 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current1) ID Value Unit A 30 TC=25°C 30 ID puls 120 EAS 240 Repetitive avalanche energy, limited by Tjmax 2) EAR 14 Reverse diode dv/dt dv/dt 6 Gate source voltage VGS ±20 V Power dissipation Ptot 136 W -55... +175 °C Pulsed drain current TC=25°C Avalanche energy, single pulse mJ ID=30 A , V DD=25V, RGS=25Ω kV/µs IS=30A, VDS=60, di/dt=200A/µs, Tjmax=175°C TC=25°C Operating and storage temperature T j , Tstg IEC climatic category; DIN IEC 68-1 55/175/56 Page 1 2003-05-09 SPD30N08S2-22 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - 0.7 1.1 Thermal resistance, junction - ambient, leaded RthJA - - 100 SMD version, device on PCB: RthJA - - 75 - - 50 @ min. footprint @ 6 cm2 cooling area 3) K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS 75 - - VGS(th) 2.1 3 4 Static Characteristics Drain-source breakdown voltage V V GS=0V, ID=1mA Gate threshold voltage, VGS = V DS ID=80µA Zero gate voltage drain current µA IDSS V DS=75V, VGS=0V, Tj=25°C - 0.01 1 V DS=75V, VGS=0V, Tj=125°C - 1 100 IGSS - 1 100 nA RDS(on) - 16.7 21.5 mΩ Gate-source leakage current V GS=20V, VDS=0V Drain-source on-state resistance V GS=10V, I D=25A 1Current limited by bondwire ; with an RthJC = 1.1K/W the chip is able to carry ID= 52A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not subject to production test. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2003-05-09 SPD30N08S2-22 Electrical Characteristics Parameter Symbol Conditions Values Unit min. typ. max. 17 34 - Dynamic Characteristics Transconductance gfs VDS ≥2*ID *RDS(on)max, S ID =30A Input capacitance Ciss VGS =0V, VDS =25V, - 1466 1950 pF Output capacitance Coss f=1MHz - 320 425 Reverse transfer capacitance Crss - 125 188 Turn-on delay time td(on) VDD =40V, VGS =10V, - 10 15 Rise time tr ID =30A, - 29 44 Turn-off delay time td(off) RG =7.5Ω - 36 54 Fall time tf - 28 42 - 6.5 8.6 - 24 36 - 43 57 V(plateau) VDD =60V, ID =30A - 5.3 - V IS - - 30 A - - 120 ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD =60V, ID =30A VDD =60V, ID =30A, nC VGS =0 to 10V Gate plateau voltage Reverse Diode Inverse diode continuous TC=25°C forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage VSD VGS =0V, IF =30A - 0.9 1.3 V Reverse recovery time trr VR =40V, IF =lS , - 57 71 ns Reverse recovery charge Qrr diF /dt=100A/µs - 130 163 nC Page 3 2003-05-09 SPD30N08S2-22 1 Power dissipation 2 Drain current Ptot = f (TC) ID = f (T C) parameter: VGS≥ 6 V parameter: VGS≥ 10 V SPD30N08S2-22 SPD30N08S2-22 32 150 W A 120 24 100 ID P tot 110 90 80 20 16 70 60 12 50 40 8 30 20 4 10 0 0 20 40 60 80 0 100 120 140 160 °C 190 0 20 40 60 80 100 120 140 160 °C 190 TC TC 3 Safe operating area 4 Max. transient thermal impedance ID = f ( VDS ) Z thJC = f (t p) parameter : D = 0 , TC = 25 °C parameter : D = t p/T 10 3 SPD30N08S2-22 10 1 SPD30N08S2-22 K/W A 10 0 2 10 -1 10 -2 = V DS /I D ID 10 Z thJC t = 10.0µs p D = 0.50 0.20 R DS (on ) 100 µs 10 1 0.10 0.05 1 ms 10 0.02 -3 0.01 single pulse 10 0 10 -1 10 0 10 1 V 10 2 10 -4 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 tp VDS Page 4 2003-05-09 0 SPD30N08S2-22 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (V DS); T j=25°C RDS(on) = f (I D) parameter: tp = 80 µs parameter: VGS SPD30N08S2-22 75 mΩ V [V] GS a i ID 60 b 4.8 c 5.0 50 h d 5.3 e 5.5 f 5.8 g 6.0 h 6.3 i 10.0 40 g 35 f 30 e f g h 60 55 45 d 4.5 55 R DS(on) A SPD30N08S2-22 70 Ptot = 136W 50 45 40 35 30 25 25 e 20 20 15 10 10 V [V] = GS c 5 i 15 d d 5.3 5 b e 5.5 f 5.8 g 6.0 h i 6.3 10.0 20 30 a 0 0 1 2 3 4 0 V 5.5 0 10 A 40 60 ID VDS 7 Typ. transfer characteristics 8 Typ. forward transconductance ID= f ( V GS ); V DS≥ 2 x ID x RDS(on)max g fs = f(I D); T j=25°C parameter: tp = 80 µs parameter: g fs 60 40 A S 50 30 40 g fs ID 45 25 35 30 20 25 15 20 15 10 10 5 5 0 0 1 2 3 4 5 0 V 7 0 VGS Page 5 5 10 15 20 25 30 35 40 A 50 ID 2003-05-09 SPD30N08S2-22 9 Drain-source on-state resistance 10 Typ. gate threshold voltage RDS(on) = f (Tj) VGS(th) = f (T j) parameter : ID = 25 A, VGS = 10 V parameter: VGS = VDS SPD30N08S2-22 85 4 mΩ V 400 µA V GS(th) R DS(on) 70 60 3 80 µA 2.5 50 2 40 1.5 30 98% 1 20 typ 0.5 10 0 -60 -20 20 60 140 °C 100 0 -60 200 -20 20 60 °C 100 180 Tj Tj 11 Typ. capacitances 12 Forward character. of reverse diode C = f (V DS) IF = f (V SD) parameter: VGS=0V, f=1 MHz parameter: T j , tp = 80 µs 10 4 10 3 SPD30N08S2-22 A pF 10 10 2 10 1 IF C C iss 3 C oss T j = 25 °C typ T j = 175 °C typ T j = 25 °C (98%) C rss T j = 175 °C (98%) 10 2 0 10 5 10 15 20 V 30 0 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD V DS Page 6 2003-05-09 SPD30N08S2-22 13 Typ. avalanche energy 14 Typ. gate charge E AS = f (T j) VGS = f (QGate) par.: I D = 30 A , V DD = 25 V, R GS = 25 Ω parameter: ID = 30 A pulsed 240 SPD30N08S2-22 16 mJ V 200 12 VGS E AS 180 160 0,2 VDS max 10 0,8 VDS max 140 120 8 100 6 80 60 4 40 2 20 0 25 45 65 85 105 125 145 °C 185 Tj 0 0 10 20 30 40 50 nC 65 QGate 15 Drain-source breakdown voltage V(BR)DSS = f (Tj) parameter: ID=10 mA 92 SPD30N08S2-22 V V(BR)DSS 88 86 84 82 80 78 76 74 72 70 68 -60 -20 20 60 100 140 °C 200 Tj Page 7 2003-05-09 SPD30N08S2-22 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Further information Please notice that the part number is BSPD30N08S2-22, for simplicity the device is referred to by the term SPD30N08S2-22 throughout this documentation. Page 8 2003-05-09