Infrared Light Emitting Diodes LNA2802L (LN68) GaAs Infrared Light Emitting Diode Unit : mm For optical control systems High-power output, high-efficiency : PO = 5 mW (typ.) Emitted light spectrum suited for silicon photodetectors : λP = 940 nm (typ.) Good radiant power output linearity with respect to input current 2-0.8 max. 2-0.5±0.1 1.0 Long lifetime, high reliability 15.0±1.0 4.5±0.3 5.0±0.2 0.6 Features Not soldered 2.0 max. ø3.8±0.2 ø3.0±0.2 ø3 plastic package 0.5±0.1 (1.5) 2.54 Parameter Symbol Ratings Unit PD 75 mW Forward current (DC) IF 50 mA Pulse forward current IFP* 1 A Power dissipation * 1.7 Absolute Maximum Ratings (Ta = 25˚C) Reverse voltage (DC) VR 3 V Operating ambient temperature Topr –25 to +85 ˚C Storage temperature Tstg – 40 to +100 ˚C 1 2 1: Anode 2: Cathode f = 100 Hz, Duty cycle = 0.1 % Electro-Optical Characteristics (Ta = 25˚C) Parameter Symbol Conditions min 2.5 typ max Unit Radiant power PO IF = 50mA Peak emission wavelength λP IF = 50mA 5 mW 940 nm Spectral half band width ∆λ IF = 50mA 50 Forward voltage (DC) VF IF = 50mA 1.3 Reverse current (DC) IR VR = 3V Capacitance between terminals Ct VR = 0V, f = 1MHz 35 pF Half-power angle θ The angle in which radiant intencity is 50% 20 deg. nm 1.5 V 10 µA Note) The part number in the parenthesis shows conventional part number. 1 LNA2802L Infrared Light Emitting Diodes IF — Ta IFP — Duty cycle 10 2 tw = 10µs Ta = 25˚C Ta = 25˚C 20 IF (mA) Pulse forward current 30 10 Forward current 50 40 Allowable forward current IF — V F 80 70 IFP (A) IF (mA) 60 1 10 –1 60 50 40 30 20 10 10 20 40 60 80 10 –2 10 –1 100 1 Ambient temperature Ta (˚C ) ∆PO — IFP 1.2 10mA (2) 10 –1 0.8 0.4 0 – 40 1 Pulse forward current IFP (A) λP — Ta 1000 0 40 80 120 10 2 10 1 – 40 0 40 Spectral characteristics Directivity characteristics 0˚ IF = 50mA Ta = 25˚C Relative radiant intensity (%) 940 920 80 80 70 60 60 50 40 40 30 20 20 10˚ 20˚ 100 90 960 120 Ambient temperature Ta (˚C ) 100 980 80 Ambient temperature Ta (˚C ) IF = 50mA Peak emission wavelength λP (nm) 1.6 ∆PO — Ta 1mA 10 –1 1.2 10 3 IF = 50mA (1) 10 –2 0.8 IF = 50mA VF (V) 10 10 –2 10 –3 0.4 VF — Ta (1) tw = 10µs f = 100Hz (2) DC Ta = 25˚C 1 0 Forward voltage VF (V) 1.6 Forward voltage Relative radiant power ∆PO 10 2 0 10 2 10 Duty cycle (%) Relative radiant intensity (%) 0 Relative radiant power ∆PO 0 – 25 30˚ 40˚ 50˚ 60˚ 70˚ 80˚ 90˚ 900 – 40 0 40 80 Ambient temperature Ta (˚C ) 2 120 0 860 900 940 980 1020 1060 1100 Wavelength λ (nm) Caution for Safety Gallium arsenide material (GaAs) is used in this product. DANGER Therefore, do not burn, destroy, cut, crush, or chemically decompose the product, since gallium arsenide material in powder or vapor form is harmful to human health. Observe the relevant laws and regulations when disposing of the products. Do not mix them with ordinary industrial waste or household refuse when disposing of GaAs-containing products. Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. 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