ETC LNA2701L(LN159)

Infrared Light Emitting Diodes
LNA2701L (LN159)
GaAs Bi-directional Infrared Light Emitting Diode
Unit : mm
8˚
8˚
26
26
.5
˚
For light source of VCR (VHS System)
.5˚
0.5 max.
Two-way directivity
2.8±0.2
2-C0.5
8˚
ø1.4±0.2
2-R0.7
1.0
Light source for tape end sensor of VCR and video camera
recorder of VHS system
Light source for 2-bit photo sensor
0.8
0.15
2-0.7 max.
0.5±0.1
2-0.5±0.1
(1.5)
Applications
16.9±1.0
Not soldered 2.0
Thin type package modified from LN59
8˚
Long lifetime, high reliability
8˚
Small resin package
2.8±0.2
1.3±0.2
8˚
3.8±0.2
2.4±0.2
0.8
High-power output, high-efficiency : PO = 1.8 mW (min.)
8˚
Features
2
1
2.0
1: Anode
2: Cathode
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Symbol
Ratings
Unit
PD
75
mW
Forward current (DC)
IF
50
mA
Pulse forward current
IFP*
1
A
Power dissipation
*
Reverse voltage (DC)
VR
3
V
Operating ambient temperature
Topr
–25 to +65
˚C
Storage temperature
Tstg
– 30 to +85
˚C
f = 100 Hz, Duty cycle = 0.1 %
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
*
Symbol
Conditions
min
typ
max
Unit
Ie*
IF = 50mA
Peak emission wavelength
λP
IF = 20mA
940
nm
Spectral half band width
∆λ
IF = 20mA
50
nm
Forward voltage (DC)
VF
IF = 50mA
1.3
Reverse current (DC)
IR
VR = 3V
Capacitance between pins
Ct
VR = 0V, f = 1MHz
Radiant intensity at center
1.2
mW/sr
35
1.5
V
10
µA
pF
Radiant intensity Ie shows each value of intensity I1 and I2 in two directions.
I1
I2
Note) The part number in the parenthesis shows conventional part number.
1
Infrared Light Emitting Diodes
LNA2701L
∆IF — Ta
tw = 10µs
Ta = 25˚C
Ta = 25˚C
30
20
Forward current ∆IF (mA)
IFP (A)
40
Pulse forward current
10
1
10 –1
60
50
40
30
20
10
10
0
20
40
60
80
10 –2
10 –1
100
1
Ta (˚C )
(2)
10 –1
1
10 2
10
Pulse forward current
VF (V)
1.2
10mA
1mA
0.8
0.4
0
– 40
10 3
IFP (mA)
0
40
80
Ambient temperature
λP — Ta
120
100
10 2
10
– 25
0
20
Relative radiant intensity (%)
960
940
920
60˚
60
100
90
80
70
60
50
40
30
20
0
40
2
80
Ta (˚C )
120
120˚
20
900
940
980
1020 1060 1100
Wavelength λ (nm)
60˚
90˚
40
0
860
100
30˚
90˚
20
30 Relative radiant
40 intensity (%)
50
60
70
80
90
150˚
100
180˚
Ambient temperature
80
Ta (˚C )
0˚
80
150˚
900
– 40
60
θ Direction light
distribution characteristics
30˚
980
40
Ambient temperature
IF = 20mA
Ta = 25˚C
IF = 20mA
1.6
IF = 20mA
Ta (˚C )
Spectral characteristics
1000
1.2
VF (V)
10 3
IF = 50mA
Forward voltage
(1)
0.8
∆Ie — Ta
VF — Ta
10
10 –2
0.4
Forward voltage
1.6
(1) tw = 10µs
f = 100Hz
(2) DC
Ta = 25˚C
1
0
Duty cycle (%)
∆Ie — IFP
10 2
0
10 2
10
Relative radiant intensity ∆Ie
Allowable forward current ∆IF (mA)
50
Ambient temperature
Relative radiant intensity ∆Ie
80
70
0
– 25
Peak emission wavelength λP (nm)
∆IF — VF∆
IFP — Duty cycle
10 2
60
120˚
Caution for Safety
Gallium arsenide material (GaAs) is used
in this product.
DANGER
Therefore, do not burn, destroy, cut, crush, or chemically decompose the product, since gallium arsenide
material in powder or vapor form is harmful to human
health.
Observe the relevant laws and regulations when disposing of the products. Do not mix them with ordinary industrial waste or household refuse when disposing of
GaAs-containing products.
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
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equipment (such as office equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
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(4) The products and product specifications described in this material are subject to change without notice for
reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements.
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range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for
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Due to modification or other reasons, any information contained in this material, such as available product
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2001 MAR