SMG2300 6A, 20V,RDS(ON) 28mΩ N-Channel Enhancement Mode Power Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SC-59 A Description L * The SMG2300 provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness. S 2 3 Top View B 1 * The SMG2300 is universally used for all D commercial-industrial surface mount applications. G J C Features K H * Low on-resistance * Capable of 2.5V gate drive Drain Gate D Source * Small package outline Dim Min Max A 2.70 3.10 B 1.40 1.60 C 1.00 1.30 D 0.35 0.50 G 1.70 2.10 H 0.00 0.10 J 0.10 0.26 K 0.20 0.60 L 0.85 1.15 S 2.40 2.80 All Dimension in mm G S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1,2 Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Unit V V A A A W W/ Tj, Tstg Ratings 20 ±8 6 4.8 20 1.25 0.01 -55 ~ +150 Symbol Rthj-a Value 100 Unit /W Thermal Data Parameter Thermal Resistance Junction-ambient3 Max. http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 1 of 4 SMG2300 6A, 20V,RDS(ON) 28mΩ N-Channel Enhancement Mode Power Mos.FET Elektronische Bauelemente Electrical Characteristics (Tj = 25 Parameter unless otherwise specified) Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS 20 - - V Breakdown Voltage Temperature Coefficient BVDSS / Tj - 0.1 - Gate Threshold Voltage VGS(th) 0.5 - 1.0 V VDS=VGS, ID=250uA IGSS - - ±100 nA VGS= ±8V - - 1 uA VDS=20V, VGS=0 - - 25 uA VDS=16V, VGS=0 - - 28 - - 38 - 10 - Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=70 ) Static Drain-Source On-Resistance2 2 Total Gate Charge IDSS RDS(ON) Qg V/ m VGS=2.5V, ID=5.2A ns pF VGS=0V VDS=15V f=1.0MHz 3.6 - Gate-Drain (“Miller”) Change Qgd - 2 - Td(on) - 8 - Tr - 6 - Td(off) - 19 - Tf - 7 - Input Capacitance Ciss - 550 - Output Capacitance Coss - 120 - Reverse Transfer Capacitance Crss - 80 - Symbol Min. Typ. Max. Unit VSD - 0.7 1.3 V Fall Time VGS=4.5V, ID=6A VDD=10V ID=1A VGS=4.5V RG=0.2 - Turn-off Delay Time Reference to 25 , ID=1mA ID=6A VDS=10V VGS=4.5V Qgs Rise Time VGS=0, ID=250uA nC Gate-Source Charge Turn-on Delay Time2 Test Conditions Source-Drain Diode Parameter Forward On Voltage2 Test Conditions IS=1.25A, VGS=0V Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on FR4 board, t http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A 10sec. Any changing of specification will not be informed individual Page 2 of 4 SMG2300 Elektronische Bauelemente 6A, 20V,RDS(ON) 28mΩ N-Channel Enhancement Mode Power Mos.FET Characteristics Curve Fig 1. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 5. Forward Characteristics of Reverse Diode http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Fig 2. Typical Output Characteristics Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 6. Gate Threshold Voltage v.s. Junction Temperature Any changing of specification will not be informed individual Page 3 of 4 SMG2300 Elektronische Bauelemente Fig 7. Gate Charge Characteristics Fig 9. Transfer Characteristics 6A, 20V,RDS(ON) 28mΩ N-Channel Enhancement Mode Power Mos.FET Fig 8. Typical Capacitance Characteristics Fig 10. Single Pulse Power Fig 11. Normalized Thermal Transient Impedance, Junction to Ambient http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 4 of 4