INFINEON Q62702

BC 807-16W
PNP Silicon AF Transistor
• For general AF applications
• High collector current
• High current gain
• Low collector-emitter saturation voltage
• Complementary types: BC817W, BC818W (NPN)
Type
Marking Ordering Code
Pin Configuration
Package
BC 807-16W
5As
Q62702-C2325
1=B
2=E
3=C
SOT-323
BC 807-25W
5Bs
Q62702-C2326
1=B
2=E
3=C
SOT-323
BC 807-40W
5Cs
Q62702-C2327
1=B
2=E
3=C
SOT-323
BC 808-16W
5Es
Q62702-C2328
1=B
2=E
3=C
SOT-323
BC 808-25W
5Fs
Q62702-C2329
1=B
2=E
3=C
SOT-323
BC 808-40W
5Gs
Q62702-C2330
1=B
2=E
3=C
SOT-323
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
VCEO
Values
Unit
V
BC 807 W
45
BC 808 W
25
VCBO
Collector-base voltage
BC 807 W
50
BC 808 W
30
Emitter-base voltage
VEBO
5
DC collector current
IC
500
mA
Peak collector current
ICM
1
A
Base current
IB
100
mA
Total power dissipation, TS = 130°C
Ptot
250
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
- 65 ... + 150
Thermal Resistance
Junction ambient
1)
Junction - soldering point
RthJA
≤ 215
RthJS
≤ 80
K/W
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu
Semiconductor Group
1
Dec-19-1996
BC 807-16W
Electrical Characteristics at TA=25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
DC Characteristics
Collector-emitter breakdown voltage
V(BR)CEO
V
IC = 10 mA, IB = 0 , BC 807 W
45
-
-
IC = 10 mA, IB = 0 , BC 808 W
25
-
-
IC = 10 µA, IB = 0 , BC 807 W
50
-
-
IC = 10 µA, IB = 0 , BC 808 W
30
-
-
5
-
-
VCB = 25 V, TA = 25 °C
-
-
100
nA
VCB = 25 V, TA = 150 °C
-
-
50
µA
Collector-base breakdown voltage
Base-emitter breakdown voltage
V(BR)CBO
V(BR)EBO
IE = 10 µA, IC = 0
Collector-base cutoff current
Emitter cutoff current
ICBO
IEBO
VEB = 4 V, IC = 0
DC current gain
nA
-
-
100
hFE
-
IC = 100 mA, VCE = 1 V, BC ... 16 W
100
160
250
IC = 100 mA, VCE = 1 V, BC ... 25 W
160
250
400
IC = 100 mA, VCE = 1 V, BC ... 40 W
250
350
630
IC = 300 mA, VCE = 1 V, BC ... 16 W
60
-
-
IC = 300 mA, VCE = 1 V, BC ... 25 W
100
-
-
IC = 300 mA, VCE = 1 V, BC ... 40 W
170
-
-
Collector-emitter saturation voltage 1)
VCEsat
IC = 500 mA, IB = 50 mA
Base-emitter saturation voltage 1)
-
-
0.7
-
-
1.2
VBEsat
IC = 500 mA, IB = 50 mA
1) Pulse test: t < 300µs; D < 2%
Semiconductor Group
V
2
Dec-19-1996
BC 807-16W
PNP Silicon AF Transistor
Electrical Characteristics at TA=25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
AC Characteristics
Transition frequency
fT
IC = 50 mA, VCE = 5 V, f = 100 MHz
Collector-base capacitance
-
pF
-
10
-
-
60
-
Ceb
VEB = 0.5 V, f = 1 MHz
Semiconductor Group
200
Ccb
VCB = 10 V, f = 1 MHz
Emitter-base capacitance
MHz
3
Dec-19-1996
BC 807-16W
Total power dissipation Ptot = f (TA*;TS)
* Package mounted on epoxy
Permissible Pulse Load RthJS = f(tp)
10 3
300
K/W
mW
Ptot
RthJS
TS
10 2
200
TA
150
10 1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
100
10 0
50
0
0
20
40
60
80
100
10 -1
-6
10
120 °C 150
TA ,TS
10
-5
10
-4
10
-3
10
-2
-1
10
s 10
tp
0
Permissible Pulse Load Ptotmax / PtotDC = f(tp) Collectot cutoff current ICBO = f (TA)
VCB = 60V
10 3
-
Ptotmax/PtotDC
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 2
10 1
10 0
-6
10
10
-5
Semiconductor Group
10
-4
10
-3
10
-2
-1
10
s 10
tp
0
4
Dec-19-1996
BC 807-16W
DC current gain hFE = f (IC)
VCE = 1V
Transition frequency fT = f (IC)
VCE = 5V
Base-emitter saturation voltage
IC = f (VBEsat), hFE = 10
Collector-emitter saturation voltage
IC = f (VCEsat), hFE = 10
Semiconductor Group
5
Dec-19-1996