2N7000 DATA SHEET (09/10/2008) DOWNLOAD

Supertex inc.
2N7000
N-Channel Enhancement-Mode
Vertical DMOS FETs
Features
General Description
►► Free from secondary breakdown
►► Low power drive requirement
►► Ease of paralleling
►► Low CISS and fast switching speeds
►► Excellent thermal stability
►► Integral source-drain diode
►► High input impedance and high gain
The Supertex 2N7000 is an enhancement-mode (normallyoff) transistor that utilizes a vertical DMOS structure and
Supertex’s well-proven silicon-gate manufacturing process.
This combination produces a device with the power handling
capabilities of bipolar transistors, and the high input impedance
and positive temperature coefficient inherent in MOS devices.
Characteristic of all MOS structures, this device is free from
thermal runaway and thermally-induced secondary breakdown.
Applications
Supertex’s vertical DMOS FETs are ideally suited to a wide
range of switching and amplifying applications where very
low threshold voltage, high breakdown voltage, high input
impedance, low input capacitance, and fast switching speeds
are desired.
►► Motor controls
►► Converters
►► Amplifiers
►► Switches
►► Power supply circuits
►► Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.)
Ordering Information
Product Summary
Part Number
Package Option
Packing
2N7000-G
TO-92
1000/Bag
2N7000-G P002
TO-92
2000/Reel
2N7000-G P003
TO-92
2000/Reel
2N7000-G P005
TO-92
2000/Reel
2N7000-G P013
TO-92
2000/Reel
2N7000-G PO14
TO-92
2000/Reel
BVDSX/BVDGS
ID(ON)
5.0Ω
75mA
(max)
60V
(min)
Pin Configuration
DRAIN
-G denotes a lead (Pb)-free / RoHS compliant package.
Contact factory for Wafer / Die availablity.
Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.
SOURCE
TO-92
Absolute Maximum Ratings
Parameter
Value
Drain-to-Source voltage
BVDSS
Drain-to-Gate voltage
BVDGS
Gate-to-Source voltage
±30V
Operating and storage temperature
RDS(ON)
-55°C to +150°C
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
GATE
Product Marking
Si2N
7 0 0 0
YYWW
YY = Year Sealed
WW = Week Sealed
= “Green” Packaging
Package may or may not include the following marks: Si or
TO-92
Typical Thermal Characteristics
Package
θja
TO-92
132OC/W
* Mounted on FR4 board; 25mm x 25mm x 1.57mm
Doc.# DSFP-2N7000
C062813
Supertex inc.
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2N7000
Thermal Characteristics
ID
Package
(continuous)†
ID
Power Dissipation
(pulsed)
@TC = 25OC
200mA
500mA
1.0W
TO-92
IDR†
IDRM
200mA
500mA
Notes:
† ID (continuous) is limited by max rated Tj.
Electrical Characteristics (T = 25°C unless otherwise specified)
A
Sym
Parameter
BVDSS
VGS(th)
IGSS
Min
Typ
Max
Units
Drain-to-Source breakdown voltage
60
-
-
V
VGS = 0V, ID = 10µA
Gate threshold voltage
0.8
-
3.0
V
VGS = VDS, ID = 1.0mA
-
-
10
nA
VGS = ±15V, VDS = 0V
-
-
1.0
µA
VGS = 0V, VDS = 48V
-
-
1.0
mA
VGS = 0V, VDS = 48V,
TA = 125OC
mA
VGS = 4.5V, VDS = 10V
Gate body leakage current
IDSS
Zero Gate voltage drain current
ID(ON)
On-state drain current
75
-
-
RDS(ON)
Static Drain-to-Source
on-state resistance
-
-
5.3
-
-
5.0
100
-
-
GFS
Forward transconductance
CISS
Input capacitance
-
-
60
COSS
Common Source output capacitance
-
-
25
CRSS
Reverse transfer capacitance
-
-
5
t(ON)
Turn-on time
-
-
10
t(OFF)
Turn-off time
-
-
10
VSD
Diode forward voltage drop
-
0.85
-
Ω
mmho
Conditions
VGS = 4.5V, ID = 75mA
VGS = 10V, ID = 500mA
VDS = 10V, ID = 200mA
pF
VGS = 0V, VDS = 25V,
f = 1.0MHz
ns
VDD = 15V, ID = 500mA,
RGEN = 25Ω
V
VGS = 0V, ISD = 200mA
Notes:
1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
10V
INPUT
0V
Pulse
Generator
10%
t(ON)
td(ON)
VDD
OUTPUT
0V
Doc.# DSFP-2N7000
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VDD
90%
t(OFF)
tr
td(OFF)
OUTPUT
RGEN
tf
10%
10%
90%
RL
INPUT
D.U.T.
90%
2
Supertex inc.
www.supertex.com
2N7000
Typical Performance Curves
Output Characteristics
2.5
Saturation Characteristics
2.5
VGS = 10V
8V
VGS = 10V
2.0
2.0
1.5
ID (amperes)
ID (amperes)
8V
6V
1.0
4V
10
20
30
6V
1.0
4V
0.5
0.5
0 0
1.5
40
0
50
0
2
4
Transconductance vs. Drain Current
1.0
6
8
10
VDS (volts)
VDS (volts)
2.0
VDS = 25V
Power Dissipation vs. Case Temperature
0.6
PD (watts)
GFS (seimens)
0.8
TA = -55OC
0.4
25OC
TO-92
1.0
125OC
0.2
0
0
0.2
0.4
0.6
0.8
0
1.0
0
25
50
ID (amperes)
1.0
1.0
Thermal Resistance (normalized)
TO-92 (DC)
ID (amperes)
0.1
0.01
Doc.# DSFP-2N7000
C0628213
TC = 25OC
1.0
VDS (volts)
125
150
TC ( C)
Maximum Rated Safe Operating Area
0.1
100
O
TO-92 (pulsed)
0.001
75
10
0.8
0.6
0.4
TO-92
PD = 1.0W
TC = 25OC
0.2
0
100
Thermal Response Characteristics
0.001
0.01
0.1
1.0
10
tp (seconds)
3
Supertex inc.
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2N7000
Typical Performance Curves (cont.)
BVDSS Variation with Temperature
On-Resistance vs. Drain Current
5.0
1.1
VGS = 4.5V
RDSS(ON) (ohms)
BVDSS (normalized)
4.0
1.0
VGS = 10V
3.0
2.0
1.0
0.9
0
50
100
0
150
0
0.5
1.0
Transfer Characteristics
2.5
1.4
TA = -55OC
2.0
25 C
1.5
VGS(th) (normalized)
ID (amperes)
O
125OC
1.0
0.5
0
0
2
4
6
8
1.2
1.9
1.6
1.3
V(th) @ 1.0mA
1.0
1.0
0.8
0.7
0
VGS (volts)
100
2.5
RDS @ 10V, 1.0A
0.6
-50
10
2.0
V(th) and RDS Variation with Temperature
1.6
VDS = 25V
1.5
ID (amperes)
TJ (OC)
50
RDS(ON) (normalized)
-50
0.4
150
100
Tj ( C)
O
Capacitance vs. Drain-to-Source Voltage
Gate Drive Dynamic Characteristics
10
f = 1MHz
8
VDS = 10V
VGS (volts)
C (picofarads)
75
50
CISS
40V
6
80 pF
4
25
2
COSS
0
0
CRSS
10
20
30
0
40
VDS (volts)
Doc.# DSFP-2N7000
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40 pF
0
0.2
0.4
0.6
0.8
1.0
QG (nanocoulombs)
4
Supertex inc.
www.supertex.com
2N7000
3-Lead TO-92 Package Outline (N3)
D
A
Seating
Plane
1
2
3
L
c
b
e1
e
Side View
Front View
E1
E
1
3
2
Bottom View
Symbol
Dimensions
(inches)
A
b
c
D
E
E1
e
e1
L
MIN
.170
.014†
.014†
.175
.125
.080
.095
.045
.500
NOM
-
-
-
-
-
-
-
-
-
MAX
.210
.022†
.022†
.205
.165
.105
.105
.055
.610*
JEDEC Registration TO-92.
* This dimension is not specified in the JEDEC drawing.
† This dimension differs from the JEDEC drawing.
Drawings not to scale.
Supertex Doc.#: DSPD-3TO92N3, Version E041009.
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline
information go to http://www.supertex.com/packaging.html.)
Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives
an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability
to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and
specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. (website: http//www.supertex.com)
Supertex inc.
©2013 Supertex inc. All rights reserved. Unauthorized use or reproduction is prohibited.
Doc.# DSFP-2N7000
C062813
5
1235 Bordeaux Drive, Sunnyvale, CA 94089
Tel: 408-222-8888
www.supertex.com