Supertex inc. VN3205 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ►► Free from secondary breakdown ►► Low power drive requirement ►► Ease of paralleling ►► Low CISS and fast switching speeds ►► Excellent thermal stability ►► Integral source-drain diode ►► High input impedance and high gain Applications ►► Motor controls ►► Converters ►► Amplifiers ►► Switches ►► Power supply circuits ►► Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Ordering Information Part Number This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Product Summary Package Option Packing VN3205N3-G 3-Lead TO-92 VN3205N3-G P002 1000/Bag VN3205N3-G P003 VN3205N3-G P005 3-Lead TO-92 2000/Reel RDS(ON) BVDSS/BVDGS VGS(th) (V) (max) (Ω) (max) (V) 50 0.3 2.4 Pin Configuration VN3205N3-G P013 VN3205N3-G P014 DRAIN VN3205N8-G 3-Lead TO-243AA (SOT-89) 2000/Reel VN3205NW Die in wafer form --- VN3205NJ Die on adhesive tape --- VN3205ND Die in waffle pack --- SOURCE GATE TO-92 (N3) DRAIN For packaged products, -G indicates package is RoHS compliant (‘Green’). TO-92 taping specifications and winding styles per EIA-468 Standard. Devices in Wafer / Die form are RoHS compliant (‘Green’). Refer to Die Specification VF32 for layout and dimensions. SOURCE DRAIN GATE TO-243AA (SOT-89) (N8) Absolute Maximum Ratings Parameter Value Drain-to-source voltage BVDSS Drain-to-gate voltage BVDGS Gate-to-source voltage ±20V Operating and storage temperature -55 C to +150OC O Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. Typical Thermal Resistance Package θja 3-Lead TO-92 132 C/W 3-Lead TO-243AA (SOT-89) 133OC/W Doc.# DSFP-VN3205 C101612 Product Marking SiVN 3 2 0 5 YYWW YY = Year Sealed WW = Week Sealed = “Green” Packaging Package may or may not include the following marks: Si or TO-92 (N3) VN2LW W = Code for week sealed = “Green” Packaging Package may or may not include the following marks: Si or TO-243AA (SOT-89) (N8) O Supertex inc. www.supertex.com VN3205 Thermal Characteristics (continuous)* (A) ID ID Power Dissipation (pulsed) (A) @TC = 25OC (W) TO-92 1.2 8.0 1.0 TO-243AA 1.5 8.0 Package 1.6 (TA = 25 ) O Notes: * ID (continuous) is limited by max rated Tj, Ta = 25OC. † Total for package. ‡ Mounted on FR5 board, 25mm x 25mm x 1.57mm. IDR† (A) IDRM (A) 1.2 8.0 1.5 8.0 Electrical Characteristics (T = 25 C unless otherwise specified) O j Sym Parameter BVDSS VGS(th) ΔVGS(th) IGSS Min Typ Max Units Drain-to-Source breakdown voltage 50 - - V VGS = 0V, ID = 10mA Gate threshold voltage 0.8 - 2.4 V VGS = VDS, ID = 10mA Change in VGS(th) with temperature - -4.3 -5.5 O mV/ C VGS = VDS, ID = 10mA Gate body leakage current - 1.0 100 nA VGS = ±20V, VDS = 0V - - 10 µA VGS = 0V, VDS = Max Rating - - 1.0 mA VDS = 0.8 Max Rating, VGS = 0V, TA = 125OC 3.0 14 - A VGS = 10V, VDS = 5.0V TO-92 - - 0.45 TO-243AA - - 0.45 TO-92 - - 0.3 TO-243AA - - 0.3 IDSS Zero Gate voltage drain current ID(ON) ON-state Drain current RDS(ON) ΔRDS(ON) Static Drain-to-Source ON-state resistance Change in RDS(ON) with temperature Conditions VGS = 4.5V, ID = 1.5A Ω VGS = 4.5V, ID = 0.75A VGS = 10V, ID = 3.0A VGS = 10V, ID = 1.5A - 0.85 1.2 %/ C VGS = 10V, ID = 3.0A 1.0 1.5 - mho VDS = 25V, ID = 2.0A Input capacitance - 220 300 COSS Common Source output capacitance - 70 120 CRSS Reverse transfer capacitance - 20 30 td(ON) Turn-on delay time - - 10 Rise time - - 15 Turn-off delay time - - 25 Fall time - - 25 Diode forward voltage drop - - Reverse recovery time - 300 GFS Forward transconductance CISS tr td(OFF) tf VSD trr O pF VGS = 0V, VDS = 25V, f = 1.0MHz ns VDD = 25V, ID = 2.0A, RGEN = 10Ω 1.6 V VGS = 0V, ISD = 1.5A - ns VGS = 0V, ISD = 1.0A Notes: 1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 10V INPUT 0V Pulse Generator 10% t(ON) td(ON) VDD OUTPUT 0V Doc.# DSFP-VN3205 C101612 VDD 90% t(OFF) tr td(OFF) OUTPUT RGEN tf 10% 10% 90% RL INPUT D.U.T. 90% 2 Supertex inc. www.supertex.com VN3205 Typical Performance Curves Output Characteristics 16 VGS = 10V 12 8V 8.0 6V 4.0 Saturation Characteristics 20 ID (amperes) ID (amperes) 20 4V 16 VGS = 10V 12 8V 8.0 6V 4.0 4V 3V 3V 0 0 10 20 30 40 VDS (volts) 00 50 Transconductance vs. Drain Current 5.0 3.2 4.0 6.0 8.0 VDS (volts) 10 Power Dissipation vs. Case Temperature VDS = 25V 4.0 GFS (seimens) 2.0 2.4 PD (watts) 3.0 TA = -55OC 25OC 2.0 TO-243AA (TA = 25°C) 1.6 125OC TO-92 0.8 1.0 0 2.0 4.0 6.0 8.0 ID (amperes) 0 10 Maximum Rated Safe Operating Area 10 1.0 1.0 TO-243AA (pulsed) TO-92 (pulsed) ID (amperes) TO-243AA (DC) TO-92 (DC) 0.1 TC = 25OC 0.01 Doc.# DSFP-VN3205 C101612 0 1.0 VDS (volts) 10 0 25 50 75 100 125 150 TC (OC) Thermal Resistance (normalized) 0 Thermal Response Characteristics 0.8 0.6 0.4 0.2 0 0.001 100 TO-243AA TA = 25OC PD = 1.6W TO-92 TC = 25OC PD = 1.0W 0.01 0.1 1.0 10 tp (seconds) 3 Supertex inc. www.supertex.com VN3205 Typical Performance Curves (cont.) BVDSS Variation with Temperature 1.1 On-Resistance vs. Drain Current 1.0 VGS = 4.5V RDSS(ON) (ohms) BVDSS (normalized) 0.8 1.0 VGS = 10V 0.6 0.4 0.2 0 50 100 0 150 0 4.0 8.0 TA = -55OC 25OC VGS(th) (normalized) ID (amperes) 1.6 RDS(ON) @ 10V, 3.0A 6.0 125OC 4.0 1.1 1.4 1.0 1.2 0.9 1.0 VGS(th) @ 1.0mA 0.8 2.0 0 0 2.0 4.0 6.0 8.0 VGS (volts) 0.7 -50 10 0 50 Capacitance vs. Drain-to-Source Voltage VDS = 10V 8.0 VDS = 40V CISS VGS (volts) C (picofarads) 300 200 COSS 6.0 325 pF 4.0 2.0 CRSS 0 10 20 0.6 150 100 Gate Drive Dynamic Characteristics 10 f = 1MHz 100 0.8 Tj (OC) 400 Doc.# DSFP-VN3205 C101612 20 1.2 VDS =25V 8.0 0 16 V(th) and RDS Variation with Temperature Transfer Characteristics 10 12 ID (amperes) Tj ( C) O RDS(ON) (normalized) 0.9 -50 VDS (volts) 215 pF 30 0 40 4 0 1.0 2.0 3.0 QG (nanocoulombs) 4.0 5.0 Supertex inc. www.supertex.com VN3205 3-Lead TO-92 Package Outline (N3) D A Seating Plane 1 2 3 L c b e1 e Side View Front View E1 E 1 3 2 Bottom View Symbol Dimensions (inches) A b c D E E1 e e1 L MIN .170 .014† .014† .175 .125 .080 .095 .045 .500 NOM - - - - - - - - - MAX .210 .022† .022† .205 .165 .105 .105 .055 .610* JEDEC Registration TO-92. * This dimension is not specified in the JEDEC drawing. † This dimension differs from the JEDEC drawing. Drawings not to scale. Supertex Doc.#: DSPD-3TO92N3, Version E041009. Doc.# DSFP-VN3205 C101612 5 Supertex inc. www.supertex.com VN3205 3-Lead TO-243AA (SOT-89) Package Outline (N8) D D1 C E H L 1 2 E1 3 b b1 e A e1 Top View Symbol Dimensions (mm) Side View A b b1 C D D1 E E1 MIN 1.40 0.44 0.36 0.35 4.40 1.62 2.29 2.00† NOM - - - - - - - - MAX 1.60 0.56 0.48 0.44 4.60 1.83 2.60 2.29 e 1.50 BSC e1 3.00 BSC H L 3.94 0.73† - - 4.25 1.20 JEDEC Registration TO-243, Variation AA, Issue C, July 1986. † This dimension differs from the JEDEC drawing Drawings not to scale. Supertex Doc. #: DSPD-3TO243AAN8, Version F111010. (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.) Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. (website: http//www.supertex.com) Supertex inc. ©2013 Supertex inc. All rights reserved. Unauthorized use or reproduction is prohibited. Doc.# DSFP-VN3205 C101612 6 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com