BSP316P SIPMOS Small-Signal-Transistor Feature Product Summary • P-Channel VDS • Enhancement mode R DS(on) • Logic Level ID • dv/dt rated 1.8 Ω -0.68 A Drain pin 2/4 Gate pin1 • Halogenfree according to IEC61249221 BSP316P V PG-SOT223-4-1 • Qualified according to AEC Q101 Type -100 Source pin 3 Tape and Reel Information Package PG-SOT223-4-1 H6327: 1000 pcs/reel Marking Packaging BSP316P Non dry Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Value Unit A TA=25°C -0.68 TA=70°C -0.54 ID puls -2.72 dv/dt 6 Gate source voltage VGS ±20 V Power dissipation Ptot 1.8 W -55... +150 55/150/56 °C Pulsed drain current TA=25°C Reverse diode dv/dt kV/µs IS =-0.68A, VDS =-48V, di/dt=-200A/µs, Tjmax=150°C TA=25°C Tj , Tstg Operating and storage temperature IEC climatic category; DIN IEC 68-1 ESD Class JESD22-A114-HBM Rev.1.8 Class 1a Page 1 2012-11-26 BSP316P Thermal Characteristics Parameter Symbol Values Unit min. typ. max. - 15 25 @ min. footprint - 80 115 @ 6 cm 2 cooling area 1) - 48 70 Characteristics Thermal resistance, junction - soldering point RthJS K/W (Pin 4) SMD version, device on PCB: RthJA Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. -100 - - -1 -1.5 -2 Static Characteristics Drain-source breakdown voltage V(BR)DSS V VGS =0, ID=-250µA Gate threshold voltage, VGS = VDS VGS(th) ID =-170µA Zero gate voltage drain current µA IDSS VDS =-100V, VGS =0, Tj =25°C - -0.1 -0.2 VDS =-100V, VGS =0, Tj =150°C - -10 -100 IGSS - -10 -100 nA RDS(on) - 1.5 2.3 Ω RDS(on) - 1.4 1.8 Gate-source leakage current VGS =-20V, VDS =0 Drain-source on-state resistance VGS =-4.5V, ID =-0.61A Drain-source on-state resistance VGS =-10V, ID =-0.68A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev.1.8 Page 2 2012-11-26 BSP316P Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. 0.5 1 - S pF Dynamic Characteristics Transconductance gfs |VDS|≥2*|ID |*RDS(on)max , ID =-0.54A Input capacitance Ciss VGS =0, VDS =-25V, - 117 146 Output capacitance Coss f=1MHz - 27.7 34.5 Reverse transfer capacitance Crss - 12 15 Turn-on delay time td(on) VDD =-50V, VGS=-10V, - 4.7 7 Rise time tr ID =-0.68A, RG =6Ω - 7.5 11.2 Turn-off delay time td(off) - 67.4 101 Fall time tf - 25.9 38.9 - -0.2 -0.3 - -1.87 -2.8 - -5.1 -6.4 V(plateau) VDD =-80V, ID =-0.68A - -2.7 - IS - - -0.68 A - - -2.72 ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD =-80V, ID =-0.68A VDD =-80V, ID =-0.68A, nC VGS =0 to -10V Gate plateau voltage V Reverse Diode Inverse diode continuous TA=25°C forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage VSD Reverse recovery time trr VGS =0, IF =-0.68A - -0.85 -1.2 V VR =-50V, IF =lS , - 44.2 55.3 ns Reverse recovery charge diF /dt=100A/µs - 56.3 70.4 nC Rev.1.8 Qrr Page 3 2012-11-26 BSP316P 1 Power dissipation 2 Drain current Ptot = f (TA ) ID = f (TA ) parameter: |VGS | ≥ 10V 1.9 BSP 316 P BSP 316 P -0.75 A W 1.6 -0.6 -0.55 1.2 ID Ptot 1.4 -0.5 -0.45 -0.4 1 -0.35 0.8 -0.3 -0.25 0.6 -0.2 0.4 -0.15 -0.1 0.2 -0.05 0 0 20 40 60 80 100 °C 120 0 0 160 20 40 60 80 100 120 TA 3 Safe operating area 4 Transient thermal impedance ID = f ( VDS ) ZthJA = f (tp ) parameter : D = 0 , TA = 25°C parameter : D = tp /T -10 160 °C TA 10 2 1 BSP 316 P BSP 316 P K/W A tp = 250.0µs -10 0 Z thJA 10 1 =V DS ID /I D 1 ms 10 0 DS (on ) 10 ms R D = 0.50 0.20 -10 -1 0.10 10 -1 0.05 single pulse 0.02 0.01 DC -10 -2 -10 -1 -10 0 -10 1 -10 2 V -10 3 VDS Rev.1.8 10 -2 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10 s 10 tp Page 4 2012-11-26 4 BSP316P 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS ) RDS(on) = f (ID ) parameter: Tj =25°C, -VGS parameter: Tj =25°C, -VGS 7 A 10V 5V 4.4V 2 3.6V 3.2V 1.8 2.8V 1.6 2.4V 2.2V 2.2V 2.4V 2.8V 3.2V 3.6V 4.4V 5V 10V Ω RDS(on) -I D 2.4 1.4 5 4 1.2 3 1 0.8 2 0.6 0.4 1 0.2 0 0 0.5 1 1.5 2 2.5 3 3.5 4 0 0 V 5 -VDS 0.4 0.8 1.2 A 1.6 2.4 -ID 7 Typ. transfer characteristics 8 Typ. forward transconductance ID= f ( VGS ); |VDS|≥ 2 x |ID | x RDS(on)max gfs = f(ID) parameter: Tj = 25 °C parameter: Tj =25°C 3.5 1.8 A S g fs -I D 2.5 1.2 2 0.9 1.5 0.6 1 0.3 0.5 0 0 0.5 1 1.5 2 2.5 3 3.5 V 4.5 -VGS Rev.1.8 0 0 0.4 0.8 1.2 1.6 2 2.4 A 3.2 -ID Page 5 2012-11-26 BSP316P 9 Drain-source on-state resistance 10 Typ. gate threshold voltage RDS(on) = f (Tj ) VGS(th) = f (Tj) parameter : ID = -0.68 A, VGS = -10 V parameter: VGS = VDS 5 BSP 316 P 2.4 V Ω 98% 2 VGS(th) RDS(on) 4 3.5 3 1.8 typ. 1.6 1.4 2.5 1.2 98% 2 2% 1 0.8 1.5 typ 0.6 1 0.4 0.5 0.2 0 -60 -20 20 60 100 °C 0 -60 180 -20 20 60 100 Tj °C 160 Tj 11 Typ. capacitances 12 Forward character. of reverse diode C = f (VDS) IF = f (VSD ) parameter: VGS =0, f=1 MHz, Tj = 25 °C parameter: Tj 10 3 -10 1 pF BSP 316 P A Ciss IF -10 0 C 10 2 Coss Crss 10 1 -10 -1 Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 0 0 4 8 12 16 20 24 28 V 36 -VDS Rev.1.8 -10 -2 0 -0.4 -0.8 -1.2 -1.6 -2 -2.4 V -3 VSD Page 6 2012-11-26 BSP316P 13 Typ. gate charge 14 Drain-source breakdown voltage VGS = f (QGate) V(BR)DSS = f (Tj ) parameter: ID = -0.68 A pulsed, Tj = 25 °C -16 BSP 316 P BSP 316 P -120 V V(BR)DSS V VGS -12 -10 -114 -112 -110 -108 -106 -8 -104 -102 -6 -100 -4 -2 0.2 VDS max -98 0.5 VDS max -96 -94 0.8 VDS max -92 0 0 1 2 3 4 5 6 7 nC 8.5 |Q G| Rev.1.8 -90 -60 -20 20 60 100 °C 180 Tj Page 7 2012-11-26 BSP316P Rev.1.8 Page 8 201211-26