INFINEON BGF121

D a t a S h e e t , V 2 . 2 , J u n e 2 00 9
B G F 12 1
T r a n s i e n t V o l t ag e S u p p r es s o r
S m a l l S i g n a l D i s c r et e s
Edition 2009-06-16
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2009.
All Rights Reserved.
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The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values
stated herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com).
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Due to technical requirements components may contain dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies Office.
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of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support
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BGF121
BGF121
Revision History: 2009-06-16, V2.2
Previous Version: 2009-02-25, V2.1
Page
Subjects (major changes since last revision)
7
Figure 5 updated for 2mm component pitch
Data Sheet
3
V2.2, 2009-06-16
BGF121
Transient Voltage Suppressor
Transient Voltage Suppressor
Features
• 1 channel TVS diode designed for portable application
• ESD protection according to IEC61000-4-2
for ±15 kV contact discharge on all IOs
• Wafer Level Package with SnAgCu solder balls
• RoHS and WEEE compliant package
• Very small form factor
TVS
• High peak pulse power
• Stand-off voltage up to 10 V
• Low clamping voltage factor Vcl/Vbr
• Fast response time
WLP-4-1-3D
Description
The BGF121 is a single line TVS diode designed for transient voltage and power overstress suppression. All pins
are protected against ESD pulses of ±15 kV contact discharge according to IEC61000-4-2. The wafer level
package is a green package with a size of only 0.75 mm x 0.75 mm and a total height of 0.60 mm.
A2
A1
B1 ( GND)
Figure 1
B 2 ( GND)
Schematic
Type
Package
Marking
Chip
BGF121
WLP-4-1
21
N0743
Data Sheet
4
V2.2, 2009-06-16
BGF121
Transient Voltage Suppressor
Table 1
Maximum Ratings
Parameter
Symbol
Voltage at all pins to GND
Operating temperature range
Storage temperature range
Electrostatic Discharge According to
IEC61000-4-2
Table 2
VP
TOP
TSTG
VESD
Values
Unit
Note /
Test Condition
Min.
Typ.
Max.
0
–
10
V
–
-30
–
+85
°C
–
-55
–
+150
°C
–
-15
–
15
kV
–
Unit
Note /
Test Condition
pF
VR = 0 V
IF = 850 mA
IR = 15 mA
TA= -30 °C
TA= 25 °C
IR = 1 A,
TA= 85 °C
VR = 10 V
TA= -30 °C
TA= 25 °C
TA= 85 °C
Electrical Characteristics1)
Parameter
Symbol
Values
Min.
Line capacitance to GND
Forward voltage
Break down voltage
CT
VF2)
VBR
VCL3)
Leakage current of line to GND
IR
Max.
160
1.1
1.3
V
V
16
Clamping voltage during transient
Typ.
16.9
17.7
18.7
20
V
nA
1
10
100
800
1) Otherwise specified at TA = 25 °C
2) To avoid high temperature and possible disassembling of component from the board, DC current operation to be limited to
few seconds
3) 8/20 µs pulse waveform according to IEC61000-4-5
Data Sheet
5
V2.2, 2009-06-16
BGF121
Transient Voltage Suppressor
Line Capacitance BGF121
Line Capacitance [pF]
200
150
100
50
0
0
2
4
6
8
10
Voltage [V]
Figure 2
Line Capacitance vs reverse voltage (typical values) at 25°C
BGF121 Peak pulse current vs clamping voltage
Reverse Current IR [A]
100.0
10.0
1.0
17
19
21
23
25
27
29
Clamping Voltage VCL [V]
Figure 3
Data Sheet
Peak pulse reverse current (IEC61000-4-5) versus clamping voltage (typical values) at 25°C
6
V2.2, 2009-06-16
BGF121
Transient Voltage Suppressor
Package Outline
Solder balls face down
Solder balls face up
0.75 ±0.05
A2
A1
B2
B1
4x
0.25 ±0.04 1)
ø0.05 M A B
C
0.08 C
4x
COPLANARITY
A
0.75 ±0.05
0.4
(0.175 ±0.05 )
(0.175 ±0.05 )
(0.175 ±0.05 )
0.1 C
(0.175 ±0.05 )
0.2 ±0.05
STANDOFF
SEATING PLANE 3)
Pin A1
Corner Index Area 2)
B
0.4
0.6 ±0.05
1) Dimension is measured at the maximum solder ball diameter, parallel to primary datum C
2) A1 corner identified by marking
3) Primary datum C and seating plane are defined by the domed crowns of the balls
WLP-4-1-PO-N V02
Figure 4
Package WLP-4-1 (dimension in mm)
Tape and reel specification
0.25
Pin 1
Corner Index Area
Figure 5
0.85
8
0.85
4
0.65
WLP-4-1-TP-N V05
Tape for WLP-4-1 (dimension in mm)
You can find all of our packages, sorts of packing and others in our Infineon Internet Page “Products”:
http://www.infineon.com/products
Data Sheet
7
V2.2, 2009-06-16