TVS Diodes Transient Voltage Suppressor Diodes ESD0P2RF Series Bi-directional Ultra-low Capacitance ESD / Transient Protection Diode ESD0P2RF-02LS ESD0P2RF-02LRH Data Sheet Rev. 1.2, 2012-10-01 Final Power Management & Multimarket Edition 2012-10-01 Published by Infineon Technologies AG 81726 Munich, Germany © 2012 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. 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ESD0P2RF Series Revision History: Rev. 1.1,.2012-04-27 Page or Item Subjects (major changes since previous revision) Rev. 1.2, 2012-10-01 Page Nr.8 Package name corrected (mismatch) 10 Table 2-4 updated Trademarks of Infineon Technologies AG AURIX™, BlueMoon™, C166™, CanPAK™, CIPOS™, CIPURSE™, COMNEON™, EconoPACK™, CoolMOS™, CoolSET™, CORECONTROL™, CROSSAVE™, DAVE™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™, ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OmniTune™, OptiMOS™, ORIGA™, PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SMARTi™, SmartLEWIS™, SOLID FLASH™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™, X-GOLD™, X-PMU™, XMM™, XPOSYS™. Other Trademarks Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™, PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. Mifare™ of NXP. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited. Last Trademarks Update 2010-10-26 Final Data Sheet 3 Rev. 1.2, 2012-10-01 ESD0P2RF Series Bi-directional Ultra-low Capacitance ESD / Transient Protection Diode 1 Bi-directional Ultra-low Capacitance ESD / Transient Protection Diode 1.1 Features • • • • • • • ESD / transient protection of RF signal lines according to: – IEC61000-4-2 (ESD): ±20 kV (air/contact) – IEC61000-4-4 (EFT): 40 A (5/50 ns) – IEC61000-4-5 (surge): 3 A (8/20 μs) Maximum working voltage: VRWM ±5.3 V Extremely low capacitance: CL = 0.2 pF (typical) Low clamping voltage: VCL = 29 V at IPP = 16 A (typical) Very low reverse current IR < 1 nA typ. Very small form factor down to 0.62 x 0.32 x 0.31 mm3 Pb-free (RoHS compliant) and halogen free package 1.2 • • Application Examples ESD protection of sensitive RF signal lines, Bluetooth Class 2, Automated Meter Reading RF antenna protection, frontend module, GPS, mobile TV, FM radio, UWB 1.3 Product Description Pin 1 Pin 2 Pin 1 marking (lasered) Pin 1 TSLP-2 Pin 1 Pin 2 Pin 2 TSSLP-2 a) Pin configuration b) Schematic diagram P G-TS (S)LP -2_Dual_Diode_S erie_P inConf_and_S c hematic Diag. v s d Figure 1-1 Pin Configuration and Schematic Diagram Table 1-1 Ordering Information Type Package Configuration Marking code ESD0P2RF-02LS PG-TSSLP-2-1 1 line, bi-directional T ESD0P2RF-02LRH PG-TSLP-2-17 1 line, bi-directional T Final Data Sheet 4 Rev. 1.2, 2012-10-01 ESD0P2RF Series Characteristics 2 Characteristics Table 2-1 Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Symbol Values Unit Min. Typ. Max. VESD – – 20 kV IPP – – 3 A Operating temperature range TOP -55 – 125 °C Storage temperature 1) VESD according to IEC61000-4-2 2) IPP according to IEC61000-4-5 Tstg -65 – 150 °C ESD air / contact discharge 1) Peak pulse current (tp = 8/20 μs) 2) Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. 2.1 Electrical Characteristics at TA=25°C, unless otherwise specified ! ! ! Figure 2-1 Definitions of electrical characteristics Final Data Sheet 5 Rev. 1.2, 2012-10-01 ESD0P2RF Series Characteristics Table 2-2 DC Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values Unit Min. Typ. Max. Reverse working voltage VRWM –5.3 – 5.3 V Breakdown voltage 7 – – V VBR Note / Test Condition IR = 1 mA, from pin 1 to pin 2, from pin 2 to pin 1 Reverse current Table 2-3 IR <1 50 nA VR = 5.3 V Unit Note / Test Condition RF Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Diode capacitance Table 2-4 – CL Values Min. Typ. Max. – 0.23 0.4 pF VR = 0 V, f = 1 MHz – 0.2 0.4 pF VR = 0 V, f = 1 GHz Unit Note / Test Condition V ITLP = 16 A ESD Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Clamping voltage2) Min. Typ. Max. – 29 – – 38 – ITLP = 30 A – 11 17 IPP = 1 A – 15 21 IPP = 3 A RDYN – 1 – Ω LS – 0.2 – nH ESD0P2RF-02LS 0.4 – nH ESD0P2RF-02LRH VCL 1) Clamping voltage Dynamic resistance Series inductance 2) Values – 1)IPP according to IEC61000-4-5 (tp = 8/20 µs) 2) Please refer to Application Note AN210 [4]. TLP parameter: Z0 = 50 Ω , tp = 100ns, tr = 300ps, averaging window: t1 = 30 ns to t2 = 60 ns, extraction of dynamic resistance using least squares fit of TLP charactertistics between ITLP1 = 10 A and ITLP2 = 40 A. Final Data Sheet 6 Rev. 1.2, 2012-10-01 ESD0P2RF Series Characteristics Typical Characteristics at TA = 25 °C, unless otherwise specified 10 -7 10 -8 +125°C 10-9 IR [A] 2.2 10 -10 10 -11 10-12 +85°C +25°C 0 1 2 3 VR [V] 4 5 6 5 6 Figure 2-2 Reverse current: IR = f(VR), TA = parameter 0.4 CL [pF] 0.3 0.2 0.1 0 0 1 2 3 VR [V] 4 Figure 2-3 Line capacitance: CL = f(VR), f = 1 MHz Final Data Sheet 7 Rev. 1.2, 2012-10-01 ESD0P2RF Series Characteristics 0.26 0.25 5.3V CL [pF] 0.24 3.3V 0.23 0V 0.22 0.21 0.2 0 500 1000 1500 2000 2500 3000 f [MHz] Figure 2-4 Line capacitance: CL = f(f), VR = parameter 1 0.9 0.8 CL [pF] 0.7 0.6 5.3V 0.5 0.4 3.3V 0.3 0V 0.2 0.1 0 -50 -25 0 25 50 TA [°C] 75 100 125 Figure 2-5 Line capacitance: CL = f(TA), VR = parameter Final Data Sheet 8 Rev. 1.2, 2012-10-01 ESD0P2RF Series Characteristics 120 100 VCL-max-peak = 112 [V] VCL [V] 80 VCL-30ns-peak = 24.8 [V] 60 40 20 0 -20 -100 0 100 200 300 400 500 tp [ns] 600 700 800 900 700 800 900 Figure 2-6 IEC61000-4-2 VCL = f(t), 8 kV positiv pulse from pin 1 to pin 2 20 0 VCL [V] -20 -40 -60 VCL-max-peak = -116 [V] -80 VCL-30ns-peak = -25.0 [V] -100 -120 -100 0 100 200 300 400 500 tp [ns] 600 Figure 2-7 IEC61000-4-2 VCL = f(t), 8 kV negativ pulse from pin 1 to pin 2 Final Data Sheet 9 Rev. 1.2, 2012-10-01 ESD0P2RF Series Characteristics 180 160 140 VCL [V] 120 100 VCL-max-peak = 162 [V] 80 VCL-30ns-peak = 37.4 [V] 60 40 20 0 -20 -100 0 100 200 300 400 500 tp [ns] 600 700 800 900 700 800 900 Figure 2-8 IEC61000-4-2 VCL = f(t), 15 kV positiv pulse from pin 1 to pin 2 20 0 -20 VCL [V] -40 -60 VCL-max-peak = -169 [V] -80 VCL-30ns-peak = -37.6 [V] -100 -120 -140 -160 -180 -100 0 100 200 300 400 500 tp [ns] 600 Figure 2-9 IEC61000-4-2 VCL = f(t), 15 kV negativ pulse from pin 1 to pin 2 Final Data Sheet 10 Rev. 1.2, 2012-10-01 ESD0P2RF Series Characteristics 20 ESD0P2RF-02xx RDYN ITLP [A] 30 15 RDYN=1.0Ω 20 10 10 5 0 0 5 10 15 20 25 30 35 40 45 50 55 60 VTLP [V] Equivalent VIEC [kV] 40 0 Figure 2-10 Clamping voltage : ITLP = f(VTLP) [4] 17 16 15 VCL [V] 14 13 12 11 10 9 8 7 0 1 2 IPP [A] 3 4 Figure 2-11 Clampine voltage: VCL = f(IPP), tp = 8/20 μs Final Data Sheet 11 Rev. 1.2, 2012-10-01 ESD0P2RF Series Application Information Application Information Connector 3 Protected signal line ESD I/O sensitive device 1 2 The protection diode should be placed very close to the location where the ESD or other transients can occur to keep loops and inductances as small as possible . Pin 2 (or pin 1) should be connected directly to a ground plane on the board . A pplic ation_E S D0P 2RF -02x x .v s d Figure 3-1 Single line, bi-directional ESD / Transient protection [1], [2] Final Data Sheet 12 Rev. 1.2, 2012-10-01 ESD0P2RF Series Ordering Information Scheme (Examples) 4 ESD Ordering Information Scheme (Examples) 0P1 RF - XX YY Package XX = Pin number (i.e.: 02 = 2 pins; 03 = 3 pins) YY = Package family: LS = TSSLP LRH = TSLP For Radio Frequency Applications Line Capacitance CL in pF: (i.e.: 0P1 = 0.1pF) ESD 5V3 U n U - XX YY Package or Application XX = Pin number (i.e.: 02 = 2 pins; 03 = 3 pins) YY = Package family: LS = TSSLP LRH = TSLP S = SOT363 U = SC74 XX = Application family: LC = Low Clamp HDMI Uni- / Bi-directional or Rail to Rail protection Number of protected lines (i.e.: 1 = 1 line; 4 = 4 lines) Capacitance: Standard (>10pF), Low (<10pF), Ultra-low (<1pF) Maximum working voltage VRWM in V: (i.e.: 5V3 = 5.3V) Figure 4-1 Ordering information scheme Final Data Sheet 13 Rev. 1.2, 2012-10-01 ESD0P2RF Series Package Information 5 Package Information 5.1 PG-TSLP-2-17 (mm) [5] Top view Bottom view 0.39 +0.01 -0.03 0.6 ±0.05 0.05 MAX. 1±0.05 0.65 ±0.05 2 0.25 ±0.035 1) 1 0.5 ±0.035 1) Cathode marking 1) Dimension applies to plated terminal TSLP 2 7 PO V02 0.45 Copper Solder mask 0.375 0.35 0.275 1 0.925 0.3 0.35 0.6 0.275 Figure 5-1 PG-TSLP-2-17: Package overview Stencil apertures TSLP-2-7-FP V01 Figure 5-2 PG-TSLP-2-17: Footprint 0.5 1.16 Orientation marking 8 4 0.76 TSLP-2-7-TP V03 Figure 5-3 PG-TSLP-2-17: Packing Figure 5-4 PG-TSLP-2-17: Marking (example) Final Data Sheet 14 Rev. 1.2, 2012-10-01 ESD0P2RF Series Package Information 6 Package Information 6.1 PG-TSSLP-2-1 (mm) [5] Top view Bottom view 0.31 +0.01 -0.02 0.62 ±0.035 2 1 0.2 ±0.025 1) 0.355 ±0.025 0.32 ±0.035 0.26 ±0.025 1) Cathode marking 1) Dimension applies to plated terminal TSSLP-2-1,-2-PO V05 Figure 6-1 PG-TSSLP-2-1: Package overview 0.19 0.24 Solder mask 0.19 0.57 0.14 0.62 Copper 0.19 0.27 0.24 0.32 Stencil apertures TSSLP-2-1,-2-FP V02 Figure 6-2 PG-TSSLP-2-1: Footprint 0.35 8 Ey 4 Cathode marking Ex Figure 6-3 PG-TSSLP-2-1: Packing Figure 6-4 PG-TSSLP-2-1: Marking (example) Final Data Sheet 15 Rev. 1.2, 2012-10-01 ESD0P2RF Series References References [1] Infineon AG - Application Note AN167: ESD Protection for Broadband LNA BGA728L7 for Portable and Mobile TV Applications [2] Infineon AG - Application Note AN178: ESD Protection for RF Antennas using Infineon ESD0P4RFL and ESD0P2RF-xx [3] Infineon AG - Application Note AN200: Low Cost FM Radio LNA using BFR340F for Mobile Phone Applications [4] Infineon AG - Application Note AN210: Effective ESD Protection Design at System Level using VF-TLP Characterization Methodology [5] Infineon AG - Recommendations for PCB Assembly of Infineon TSLP and TSSLP Packages Final Data Sheet 16 Rev. 1.2, 2012-10-01 w w w . i n f i n e o n . c o m Published by Infineon Technologies AG