NE57810 Advanced DDR memory termination power with external reference voltage in Rev. 04 — 24 November 2008 Product data sheet 1. Introduction The NE57810 is designed to provide power for termination of a Double Data Rate (DDR) SDRAM memory bus. It significantly reduces parts count, board space, and overall system cost compared to previous solutions. 2. General description The NE57810 DDR termination regulator maintains an output voltage (DDR reference bus voltage) that is half the RAM supply voltage. It is capable of providing up to ± 3.5 A for sustained periods. Overcurrent limiting protects the NE57810 from inrush currents at start-up. Overtemperature shutdown protects the device in extreme temperature situations. The package is thermally robust for flexibility of thermal design. The NE57810 is a linear regulator so no external inductors or switching FETs are necessary. Fast response to load changes reduces the need for output capacitors. 3. Features n n n n n n n n n Fast transient response time Overtemperature protection Overcurrent protection Commercial (0 °C to +70 °C) temperature range Reduced need for external components (switching FETs, inductors, decoupling capacitors) Internal divider maintains termination voltage at half the memory supply voltage Reference out for other memory and control components Optional external voltage reference in for flexible application Compatible with DDR-I (VDD = 2.5 V) or DDR-II (VDD = 1.8 V) SDRAM systems 4. Applications n n n n n n Desktop microcomputer systems Workstations Servers Game machines Set top boxes Embedded systems NE57810 NXP Semiconductors Advanced DDR memory termination power with external reference voltage in n Digital video recorders 5. Ordering information Table 1. Ordering information Type number Package NE57810S Name Description Version - plastic single-ended surface-mounted package; 5 leads SOT756 6. Functional diagram DIMM0 DIMM1 ExtRefIn (optional) RefOut 0.1 µF Contrtol and address VTT Data MEMORY CONTROLLER RS 27 Ω (typical) NE57810 100 µF TERMINATOR POWER RT 27 Ω (typical) 014aaa407 Fig 1. Simplified system diagram 7. Pinning information 7.1 Pinning Table 2. Pinning Symbol Pin Description VTT 1 Regulated terminator voltage VDD 2 Power supply VSS 3 Circuit ground[1] ExtRefIn 4 External reference voltage in RefOut 5 Reference voltage out [1] mb 1 2 3 4 5 The thermal pad on the rear of the device (shown by dotted outline) is connected electrically to VSS internally and provides enhancement to thermal conductivity. It should not be used as the primary connection to ground as device specifications indicate the use of the VSS pin for this purpose. NE57810_4 Product data sheet Simplified outline © NXP B.V. 2008. All rights reserved. Rev. 04 — 24 November 2008 2 of 16 NE57810 NXP Semiconductors Advanced DDR memory termination power with external reference voltage in 8. Application design-in information The NE57810 can be used in a variety of DDR memory configurations. Its small footprint, fast transient response and reduced need for large bulk output capacitance, makes it highly adaptable. Some of examples methods of use are described in the following sections. 8.1 Normal operating mode (VTT = VDDR/2) The most common implementation of a DDR terminator regulator using the NE57810 is shown in Figure 2. The NE57810 has an internal resistor divider between the VDD (pin 2) and VSS (pin 3) pins which maintains the output voltage, VTT, at VDD/2. Typically, the VDD voltage is the DDR RAM supply voltage, which can range from 1.8 V to 2.5 V. The center node of this resistor divider is connected to ExtRefIn (pin 4). This node acts as the reference for the VTT output voltage and the buffered RefOut signal (pin 5). If the ExtRefIn pin is not connected to other voltage sources, two small bypass capacitors (0.01 µF) should be placed between the ExtRefIn pin and the VSS and VDD pins to improve the terminator’s noise performance. These two capacitors improve enable the terminator to better track any variations in the memory VDD voltage. This method can be seen in Figure 2. +VDD 2 1 VDD 0.01µF +VTT NE57810 CIN 4 RefOut ExtRefIn 5 COUT (LF) 0.01µF COUT (HF) VSS 3 GND GND VREF Fig 2. 014aaa409 Normal operating method (VTT = VDD/2) There are two components to the memory signal load: a high frequency component caused by the 266 MHz plus speed of the address, data and control buses, and a low frequency component caused by the time-average skew of all of the bus states away from an equal number of 1s and 0s. Electrolytic and tantalum capacitors show inductance at the high frequencies, so two types of capacitors are required for output filtering. A very good, low ESR bulk electrolytic capacitor of no less than 470 µF should be placed next to the terminator which, in turn, should be placed as close as possible to the memory array. Multiple high frequency ceramic filter capacitors are also needed for high speed transient filtering and output stability. These capacitors may be from VTT to VSS (shown in the diagrams) or one half from VTT to VDD and the other half from VTT to VSS so the output will better track any variations in the VDD voltage. NE57810_4 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 04 — 24 November 2008 3 of 16 NE57810 NXP Semiconductors Advanced DDR memory termination power with external reference voltage in For different memory sizes, the values of the recommended output filter capacitances will change. For a 256 MB memory space, for example, approximately 100 µF of ceramic surface mount chip capacitors should be evenly distributed across the physical memory layout. Depending upon the PCB noise environment, this can be 10 pieces of 10 µF, 20 pieces of 5 µF, and so on. 8.2 Externally programmed VTT output voltage The NE57810 enables use of an external reference voltage to set its VTT output voltage. This pin (ExtRefIn pin 4) is used for applications where the VTT voltage is not VDD divided by 2. This allows VTT voltage and current to be drawn from a power supply bus that is not the DDR RAM supply voltage. This has some advantages when you are attempting to better match the power being drawn from the outputs emerging from the main system power supply. This can be seen in Figure 3. The internal reference voltage is set by two matched 100 kΩ resistors connected in a resistor divider between the VDD and VSS pins of the NE57810 VREF External Reference In +VDD VDD +VTT VTT NE57810 RefOut ExtRefIn COUT (LF) CIN COUT (HF) VSS GND GND 014aaa419 Fig 3. Externally programmed VTT 8.3 Cascading the NE57810 For high-performance computer systems, sometimes memory banks are driven 180 degrees out of phase with one another in such a way that the apparent access time is halved (even and odd memory addresses). To do this, NXP recommends that two NE57810s are used, one to terminate each memory bank. Cascading NE57810 terminators offers two advantages, it improves the system noise performance by bringing the memory SIMMs closer to the terminator, and it distributes any heat generated by the terminator system. By using the RefOut pin from one NE57810 to the ExtRefIn pin for the other NE57810(s) used in the system, one can always guarantee that the VTT voltages are identical. Because of the very tight output voltage regulation of the NE57810, the VTT outputs should never be wired together. This is because the terminators would ‘fight’ one another if their output were different by only a few millivolts. This method can be used in either the normal operating mode and the externally programmed operating mode. This method of use can be seen in Figure 4. NE57810_4 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 04 — 24 November 2008 4 of 16 NE57810 NXP Semiconductors Advanced DDR memory termination power with external reference voltage in VREF +VDD Master VDD +VTT1 VTT NE57810 RefOut ExtRefIn COUT (LF) CIN COUT (HF) VSS GND GND (HF) VDD Slave VTT +VTT NE57810 RefOut ExtRefIn COUT (LF) CIN COUT (HF) VSS To other NE5781s GND 014aaa420 Fig 4. Cascading terminator systems for complex memory systems 9. Technical description The NE57810 supplies power to the DDR memory bus termination resistors at nominally half the voltage supplied to the memory ICs or DIMMs. DDR memory output drivers source and sink current into and out of their outputs. A typical DDR memory system is seen in Figure 1. Each input/output pin on the bus has a series 20 Ω resistor connected to it. The bus is terminated to the DDR terminator through a 27 Ω to 50 Ω resistance. The memory system then requires current from the VTT terminator bus only when the instantaneous values of the aggregate bus state are not equal amounts of 1s and 0s. When memory bus speeds are in the 200 MHz to 300 MHz region, the period of any single bus state is extremely small. This permits the DDR bus termination regulator to be a linear power operational amplifier that can source and sink current instantly to the DDR bus from the VDD supply voltage. Figure 6 models the VTT loading condition of each bus line equivalent circuit during operation and with terminating resistors. NE57810_4 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 04 — 24 November 2008 5 of 16 NE57810 NXP Semiconductors Advanced DDR memory termination power with external reference voltage in VDD VDD VDD VDD 100 kΩ OVERCURRENT OVERTEMPERATURE ExtRefIn VTT RefOut 100 kΩ a. '0' data b. '1' data VSS 014aaa424 Fig 5. VTT loading conditions Fig 6. 014aaa410 Block diagram This yields the worst case current loading Equation 1: N DDR V DD I O(max) = -------------------------2 ( RT + RS ) (1) Where: • NDDR is the total number of terminated control, address and data lines within the DDR memory system. (typically 192). • RT is the value of the terminating resistors. • RS is the value of the series resistors from the active output driver. Hence the worst case current loading condition, where there are either all 1s or all 0s for an instant, and RT is 27 Ω and RS is 20 Ω, produces an instantaneous output current of either +3.5 A or −3.5 A. 10. Thermal design Designing the proper thermal system for the NE57810 is important for its reliable operation. The NE57810 will be operating at an average power level less than the maximum rating of the part. In a typical DDR terminator system the average power dissipation is between 0.8 W and 1.5 W. The termination power will vary as the average number of 1s and 0s changes during normal operation of the DDR memory. The load current will assume a new value for each bus cycle at a 266 MHz rate, and will increase and decrease as the statistical average of bus states change. The terminator heat sink must be designed to accommodate the average power as a steady state condition and be able to withstand momentary periods of increased dissipation, typically 2 seconds to 5 seconds duration. For the typical NE57810 application, the power dissipated by the terminator can be calculated by Equation 2: P D = I DD × V TT W (2) NE57810_4 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 04 — 24 November 2008 6 of 16 NE57810 NXP Semiconductors Advanced DDR memory termination power with external reference voltage in The thermal resistance of a surface mount package is given as Rth(j-a), the thermal resistance from the junction to air. JESD51-7 specifies a 4-layer multilayer PCB (2 oz/1 oz/1 oz/2 oz copper) that is 4 inches on each side. This is probably the best (or lowest) thermal resistance you will see in any application. Most applications cannot afford the PCB area to create this situation, but the thermal performance of a multilayer PCB will still provide a significant heatsinking effect. The actual thermal resistance will be higher than the 16.5 °C/W given for the 4-layer JEDEC PCB. Figure 7 shows the thermal resistance you can expect for heatsinking PCB areas less than the JEDEC specification. The graph is for a 2 oz single-sided PCB with a square area of the side dimension as given on the X-axis. If you use a double-sided PCB with some plated-through holes to help transfer heat to the bottom side, the thermal resistance only improves by about 3 °C/W to 4 °C/W. 40.0 10 0.25 s 30.0 0.5 s Thermal resistance 20.0 (°C/W) DC IDD (A) 1 10.0 0.0 0 20 40 60 80 Length of side of 2 oz. copper area (mm) 0.1 100 1 2 014aaa425 Fig 7. PCB heat sink area versus thermal resistance Fig 8. 3 4 VDD (V) 5 6 7 8 9 10 014aaa426 Safe operating area for the NE57810 After the power is estimated, the minimum PCB area can be determined by calculating the worst case thermal resistance and, based on Figure 7, determine the PCB area. This is done by Equation 3: T j – T amb R qJA(min) = ----------------------PD (3) Where: • Tj is the maximum desired junction temperature. • Tamb is the highest expected local ambient temperature. • PD is the estimated average power The junction temperature should be kept well away from the overtemperature cut-off threshold temperature (+150 °C) in normal operation. Using the above power dissipation, the highest ambient temperature and a junction temperature of +125 °C, calculate the maximum thermal resistance using Equation 4, (1.5 W is used only as an example). 125°C – 70°C R th((j-a)(min)) = ----------------------------------- = 36.6°C/W 1.5W NE57810_4 Product data sheet (4) © NXP B.V. 2008. All rights reserved. Rev. 04 — 24 November 2008 7 of 16 NE57810 NXP Semiconductors Advanced DDR memory termination power with external reference voltage in Looking at Figure 7, you see that this power dissipation requires a minimum PCB island area of 225 mm2 (15 mm on each side). This is the smallest area you could use at this power dissipation. Of course, increasing this area will allow the NE57810 to operate at cooler temperatures, thus enhancing its long-term reliability. 11. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDD supply voltage VDD to VSS voltage −0.3 +3.6 V Tamb ambient temperature 0 +70 °C Tstg storage temperature −40 +165 °C Tj junction temperature - 160 °C - 3.3 W power dissipation PD [1] [1] Tested on a minimum footprint on a four-layer PCB per JEDEC specification JESD51-7 12. Thermal characteristics Table 4. Thermal characteristics Symbol Parameter Rth(j-a) thermal resistance from junction to ambient Conditions Typ Unit 16.5 °C/W 13. Characteristics Table 5. Characteristics Tamb = 0 °C to +70 °C, VDD = 2.5 V; ITT = –3.5 A to +3.5 A, unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit VTT output voltage ExtRefIn not connected - VDD/2 - V −15 - +15 mV 1.6 - 3.6 V [1] VACC output voltage accuracy VDD supply voltage IQ supply current ITT = 0 A - 14 30 mA ITT output current 2.5 V ≤ VDD ≤ 3.6 V −3.5 - +3.5 A VDD = 1.6 V −2.5 - +2.5 A ITT = ± 1.0 A - ±6 - mV −18 - +18 mV - 100 - µF 0.8 - VDD − 0.8 V ∆VTT load regulation CLOAD load capacitance ITT = ± 3.5 A stable operation [2] External reference in VTT output voltage swing Rin(ExtRefIn) input impedance output voltage accuracy ITT = 0 A line regulation ExtRefIn = 1.25 V; VDD = 2.25 – 3.6 V [3] NE57810_4 Product data sheet 35 50 - kΩ −15 - +15 mV −6 - +6 mV © NXP B.V. 2008. All rights reserved. Rev. 04 — 24 November 2008 8 of 16 NE57810 NXP Semiconductors Advanced DDR memory termination power with external reference voltage in Table 5. Characteristics …continued Tamb = 0 °C to +70 °C, VDD = 2.5 V; ITT = –3.5 A to +3.5 A, unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit −15 ExtRefIn +15 mV 2.2 3 - mA 0.1 - - µF Reference out RefOut voltage reference out IrefOut reference out current max CLOAD load capacitance IrefOut = 0 A; source or sink [4] stable operation Power stage IIlim current limit 3.6 4.5 6.5 A Tlim temperature shutdown - 150 - °C temperature shutdown hysteresis - 20 - °C [1] VACC = VTT − VDD/2. [2] Ceramic capacitors only. Low ESR electrolytic capacitors are not necessary. [3] Voltage accuracy refers to voltage at ExtRefIn pin. [4] RefOut voltage referenced to 0.5 VDD if ExtRefIn is not connected. 14. Typical performance curves Figure 9 through Figure 13 show the typical performance curves for the NE57810. NE57810_4 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 04 — 24 November 2008 9 of 16 NE57810 NXP Semiconductors Advanced DDR memory termination power with external reference voltage in +5 mV VTT 0.5 mV 2 −3 A 1 ITT +3 A CH3 Fig 9. 25.0 mV Ch4 10.0 mV M10.0 µs CH1 200 mV Ch2 200 mV M50.0 µs Ch2 −100 mV 014aaa427 VTT transient response (output filter 50 µF ceramic) 014aaa428 Fig 10. VDD to VTT response (output filter 50 µF ceramic) VTT VTT −35 A ITT VREF Input +35 A CH1 500 mv Ch2 500 mV M10.0 µs 014aaa421 Fig 11. VREF to VTT transient response (output filter 820 µF + 50 µF ceramic) CH3 25.0 mV Ch4 10.0 mV M10.0 µs Fig 12. VREF to VTT transient response (output filter 50 µF ceramic) NE57810_4 Product data sheet 014aaa422 © NXP B.V. 2008. All rights reserved. Rev. 04 — 24 November 2008 10 of 16 NE57810 NXP Semiconductors Advanced DDR memory termination power with external reference voltage in 1.300 Normal operating region 1.280 1.260 Volts 1.240 Output sink Output source 1.220 1.200 −6 −4 −2 0 Amps 2 4 6 014aaa429 Fig 13. Typical VTT versus output current (VDD = 2.5 V at 25 °C) 15. Test information Figure 14, Figure 15 and Figure 16 show the diagrams for the NE57810 test circuits. NE57810_4 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 04 — 24 November 2008 11 of 16 NE57810 NXP Semiconductors Advanced DDR memory termination power with external reference voltage in 2 VDD NE57810 VIN 820 µF Oscon 4 0.01 µF R (Load) 1 VTT ExtRefIn VSS (5 ea) 10 µF Ceramic 3 820 µF Oscon V Light load 014aaa411 Heavy load Fig 14. Load transient test (+3 A to –3 A) 2 VDD NE57810 4 VIN VTT ExtRefIn R (Load) 1 (5 ea) 10 µF Ceramic VSS 3 820 µF Oscon V Light load Heavy load 014aaa412 Fig 15. ExtRefIn to VTT transient test VIN 0.4 V 2 VDD NE57810 VIN 4 2.5 V 0.01µF VTT ExtRefIn 1 VSS V 3 014aaa423 Fig 16. VDD to VTT transient test NE57810_4 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 04 — 24 November 2008 12 of 16 NE57810 NXP Semiconductors Advanced DDR memory termination power with external reference voltage in 16. Package outline Plastic single-ended surface-mounted package; 5 leads SOT756 D A D1 A1 D2 mounting base E1 E E2 HE 1 2 3 4 5 e b 0 2.5 w c M 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b c D D1 D2 E E1 E2 e HE w mm 2.05 1.75 0.3 0.2 0.76 0.65 0.3 0.2 9.60 9.25 9.15 8.85 5.75 5.45 9.20 8.85 7.65 7.40 8.15 7.85 1.7 10.7 10.4 0.25 OUTLINE VERSION REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 08-02-08 08-02-15 SOT756 Fig 17. Package outline SOT756 NE57810_4 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 04 — 24 November 2008 13 of 16 NE57810 NXP Semiconductors Advanced DDR memory termination power with external reference voltage in 17. Revision history Table 6. Revision history Document ID Release date Data sheet status Change notice Supersedes NE57810_4 20081124 Product data sheet - NE57810_3 Modifications: • The values for IIlim in Table 5 has been updated. NE57810_3 20080702 Product data sheet - NE57810_2 NE57810_2 20030912 Product data sheet - NE57810_1 NE57810_1 20020716 Product data sheet - - NE57810_4 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 04 — 24 November 2008 14 of 16 NE57810 NXP Semiconductors Advanced DDR memory termination power with external reference voltage in 18. Legal information 18.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 18.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 18.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 18.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 19. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] NE57810_4 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 04 — 24 November 2008 15 of 16 NE57810 NXP Semiconductors Advanced DDR memory termination power with external reference voltage in 20. Contents 1 2 3 4 5 6 7 7.1 8 8.1 8.2 8.3 9 10 11 12 13 14 15 16 17 18 18.1 18.2 18.3 18.4 19 20 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Application design-in information . . . . . . . . . . 3 Normal operating mode (VTT = VDDR/2) . . . . . . 3 Externally programmed VTT output voltage . . . 4 Cascading the NE57810. . . . . . . . . . . . . . . . . . 4 Technical description . . . . . . . . . . . . . . . . . . . . 5 Thermal design . . . . . . . . . . . . . . . . . . . . . . . . . 6 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 8 Thermal characteristics. . . . . . . . . . . . . . . . . . . 8 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Typical performance curves . . . . . . . . . . . . . . . 9 Test information . . . . . . . . . . . . . . . . . . . . . . . . 11 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 14 Legal information. . . . . . . . . . . . . . . . . . . . . . . 15 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 15 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Contact information. . . . . . . . . . . . . . . . . . . . . 15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 24 November 2008 Document identifier: NE57810_4