Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2508DX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS VCESM VCEO IC ICM Ptot VCEsat ICsat VF tf Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Diode forward voltage Fall time VBE = 0 V PINNING - SOT399 PIN base 2 collector 3 emitter IF = 4.5 A ICsat = 4.5 A; IB(end) = 1.1 A PIN CONFIGURATION DESCRIPTION 1 Ths ≤ 25 ˚C IC = 4.5 A; IB = 1.12 A case isolated TYP. MAX. UNIT 4.5 1.6 0.4 1500 700 8 15 45 1.0 2.0 0.6 V V A A W V A V µs SYMBOL c case b Rbe e 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS VCESM VCEO IC ICM IB IBM -IB(AV) -IBM Ptot Tstg Tj Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature VBE = 0 V average over any 20 ms period Ths ≤ 25 ˚C MIN. MAX. UNIT -55 - 1500 700 8 15 4 6 100 5 45 150 150 V V A A A A mA A W ˚C ˚C 1 Turn-off current. July 1998 1 Rev 2.500 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2508DX THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Rth j-hs Junction to heatsink without heatsink compound - 3.7 K/W Rth j-hs Junction to heatsink with heatsink compound - 2.8 K/W Rth j-a Junction to ambient in free air 35 - K/W TYP. MAX. UNIT 2500 V ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS Visol Repetitive peak voltage from all three terminals to external heatsink R.H. ≤ 65 % ; clean and dustfree Cisol Capacitance from T2 to external f = 1 MHz heatsink MIN. - - 22 - pF MIN. TYP. MAX. UNIT - - 1.0 2.0 mA mA 7.5 700 227 13.5 33 - - mA V Ω V 4 - 13 5.5 1.6 1.0 1.1 7.0 2.0 V V TYP. MAX. UNIT 80 - pF 5.0 0.4 6.0 0.6 µs µs 4.7 0.25 5.7 0.35 µs µs STATIC CHARACTERISTICS Ths = 25 ˚C unless otherwise specified SYMBOL ICES ICES IEBO BVEBO Rbe VCEOsust VCEsat VBEsat hFE hFE VF PARAMETER Collector cut-off current CONDITIONS 2 VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 ˚C Emitter cut-off current VEB = 7.5 V; IC = 0 A Emitter-base breakdown voltage IB = 600 mA Base-emitter resistance VEB = 7.5 V Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; L = 25 mH Collector-emitter saturation voltages IC = 4.5 A; IB = 1.12 A Base-emitter saturation voltage IC = 4.5 A; IB = 1.7 A DC current gain IC = 1 A; VCE = 5 V IC = 4.5 A; VCE = 1 V Diode forward voltage IF = 4.5 A V DYNAMIC CHARACTERISTICS Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS Cc Collector capacitance IE = 0 A; VCB = 10 V; f = 1 MHz ts tf Switching times (16 kHz line deflection circuit) Turn-off storage time Turn-off fall time ICsat = 4.5 A; IB(end) = 1.1 A; LB = 6 µH; -VBB = 4 V; (-dIB/dt = 0.6 A/µs) ts tf Switching times (38 kHz line deflection circuit) Turn-off storage time Turn-off fall time ICsat = 4.0 A; IB(end) = 0.9 A; LB = 6 µH; -VBB = 4 V; (-dIB/dt = 0.6 A/µs) 2 Measured with half sine-wave voltage (curve tracer). July 1998 2 Rev 2.500 Philips Semiconductors Product specification Silicon Diffused Power Transistor ICsat TRANSISTOR IC BU2508DX 100 h FE BU2508DF DIODE Tj = 25 C t Tj = 125 C 5V IBend IB 10 t 20us 26us 1V 64us VCE 1 0.01 0.1 10 1 IC / A t Fig.1. 16kHz Switching times waveforms. Fig.4. Typical DC current gain. hFE = f (IC) parameter VCE ICsat VBESAT / V BU2508DF 1.2 90 % Tj = 25 C 1.1 Tj = 125 C IC 1 0.9 10 % 0.8 tf IC/IB= t ts 3 0.7 IB IBend 4 0.6 5 0.5 t 0.4 0.1 1 IC / A - IBM Fig.2. Switching times definitions. Fig.5. Typical base-emitter saturation voltage. VBEsat = f (IC); parameter IC/IB + 150 v nominal adjust for ICsat VCESAT / V IC/IB= 5 0.8 4 0.7 1mH 3 0.6 0.5 LB Tj = 125 C 0.3 12nF 0.2 0.1 Rbe 0 Fig.3. 16kHz Switching times test circuit. July 1998 Tj = 25 C 0.4 D.U.T. -VBB BU2508DF 1 0.9 IBend 10 0.1 1 IC / A 10 Fig.6. Typical collector-emitter saturation voltage. VCEsat = f (IC); parameter IC/IB 3 Rev 2.500 Philips Semiconductors Product specification Silicon Diffused Power Transistor VBESAT / V 1.2 BU2508DX BU2508AX Zth K/W BU2508DF 10 Tj = 25 C 1.1 Tj = 125 C 0.5 1 0.2 1 0.1 0.05 0.9 0.1 IC= 0.02 6A 0.8 4.5A 3A 2A 0.7 0 0.6 0 1 2 IB / A 3 0.001 4 VCESAT / V BU2508DF Tj = 125 C 6A 4.5A 1 3A IC=2A 0.1 1 IB / A Eoff / uJ 1E-02 1E+00 BU2508DF ts IC = 3.5A 4.5A tf 0.1 10 Fig.8. Typical collector-emitter saturation voltage. VCEsat = f (IB); parameter IC 1000 1E-04 tp / sec ts, tf / us 12 11 10 9 8 7 6 5 4 3 2 1 0 Tj = 25 C 0.1 t T 1.0E-06 Fig.10. Transient thermal impedance. Zth j-hs = f(t); parameter D = tp/T Fig.7. Typical base-emitter saturation voltage. VBEsat = f (IB); parameter IC 10 t D= p T tp P D 0.01 1 IB / A 10 Fig.11. Typical collector storage and fall time. ts = f (IB); tf = f (IB); parameter IC; Tj = 85˚C; f = 16 kHz BU2508DF 120 Normalised Power Derating PD% with heatsink compound 110 100 90 IC = 4.5A 80 70 3.5A 60 100 50 40 30 20 10 10 0 0.1 1 IB / A 10 0 40 60 80 Ths / C 100 120 140 Fig.12. Normalised power dissipation. PD% = 100⋅PD/PD 25˚C = f (Ths) Fig.9. Typical turn-off losses. Tj = 85˚C Eoff = f (IB); parameter IC; f = 16 kHz July 1998 20 4 Rev 2.500 Philips Semiconductors Product specification Silicon Diffused Power Transistor 100 BU2508DX IC / A 100 IC / A = 0.01 = 0.01 ICM max ICM max tp = IC max 10 II 10 us II Ptot max 10 us Ptot max 1 1 100 us 100 us 1 ms I 1 ms I 0.1 0.1 10 ms 10 ms DC DC 0.01 0.01 1 10 1000 100 1 VCE / V 10 1000 100 VCE / V Fig.13. Forward bias safe operating area. Ths = 25˚C I Region of permissible DC operation. II Extension for repetitive pulse operation. Fig.14. Forward bias safe operating area. Ths = 25˚C I Region of permissible DC operation. II Extension for repetitive pulse operation. NB: Mounted with heatsink compound and 30 ± 5 newton force on the centre of the envelope. July 1998 tp = IC max 10 NB: Mounted without heatsink compound and 30 ± 5 newton force on the centre of the envelope. 5 Rev 2.500 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2508DX MECHANICAL DATA Dimensions in mm 5.8 max 16.0 max Net Mass: 5.88 g 3.0 0.7 4.5 3.3 10.0 27 max 25 25.1 25.7 22.5 max 5.1 2.2 max 18.1 min 4.5 1.1 0.4 M 2 0.95 max 5.45 5.45 3.3 Fig.15. SOT399; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". July 1998 6 Rev 2.500 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2508DX DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. July 1998 7 Rev 2.500