PHILIPS PHD2N60E

Philips Semiconductors
Product specification
PowerMOS transistors
Avalanche energy rated
FEATURES
PHP2N60E, PHB2N60E, PHD2N60E
SYMBOL
• Repetitive Avalanche Rated
• Fast switching
• Stable off-state characteristics
• High thermal cycling performance
• Low thermal resistance
QUICK REFERENCE DATA
d
VDSS = 600 V
ID = 1.9 A
g
RDS(ON) ≤ 6 Ω
s
GENERAL DESCRIPTION
N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies,
T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching
applications.
The PHP2N60E is supplied in the SOT78 (TO220AB) conventional leaded package.
The PHB2N60E is supplied in the SOT404 surface mounting package.
The PHD2N60E is supplied in the SOT428 surface mounting package.
PINNING
PIN
SOT78 (TO220AB)
DESCRIPTION
1
gate
2
drain1
3
source
SOT404
SOT428
tab
tab
tab
2
tab
drain
1 23
1
2
3
1
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDSS
VDGR
VGS
ID
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Tj = 25 ˚C to 150˚C
Tj = 25 ˚C to 150˚C; RGS = 20 kΩ
IDM
PD
Tj, Tstg
Pulsed drain current
Total dissipation
Operating junction and
storage temperature range
- 55
600
600
± 30
1.9
1.2
7.6
50
150
V
V
V
A
A
A
W
˚C
Tmb = 25 ˚C; VGS = 10 V
Tmb = 100 ˚C; VGS = 10 V
Tmb = 25 ˚C
Tmb = 25 ˚C
1 It is not possible to make connection to pin 2 of the SOT428 or SOT404 packages.
August 1998
1
Rev 1.100
Philips Semiconductors
Product specification
PowerMOS transistors
Avalanche energy rated
PHP2N60E, PHB2N60E, PHD2N60E
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
EAS
EAR
IAS, IAR
CONDITIONS
MIN.
MAX.
UNIT
-
144
mJ
-
4
mJ
-
1.9
A
Non-repetitive avalanche
energy
Unclamped inductive load, IAS = 1 A;
tp = 0.32 ms; Tj prior to avalanche = 25˚C;
VDD ≤ 50 V; RGS = 50 Ω; VGS = 10 V; refer
to fig:17
Repetitive avalanche energy2 IAR = 1.9 A; tp = 1 µs; Tj prior to
avalanche = 25˚C; RGS = 50 Ω; VGS = 10 V;
refer to fig:18
Repetitive and non-repetitive
avalanche current
THERMAL RESISTANCES
SYMBOL PARAMETER
Rth j-mb
Rth j-a
Thermal resistance junction
to mounting base
Thermal resistance junction
to ambient
CONDITIONS
MIN.
SOT78 package, in free air
SOT404 and SOT428 packages, pcb
mounted, minimum footprint
TYP. MAX. UNIT
-
-
2.5
K/W
-
60
50
-
K/W
K/W
2 pulse width and repetition rate limited by Tj max.
August 1998
2
Rev 1.100
Philips Semiconductors
Product specification
PowerMOS transistors
Avalanche energy rated
PHP2N60E, PHB2N60E, PHD2N60E
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN.
V(BR)DSS
VGS = 0 V; ID = 0.25 mA
600
-
-
V
VDS = VGS; ID = 0.25 mA
-
0.1
-
%/K
2.0
0.5
-
4.6
3.0
1.4
1
50
10
6
4.0
100
500
200
Ω
V
S
µA
µA
nA
Drain-source breakdown
voltage
∆V(BR)DSS / Drain-source breakdown
∆Tj
voltage temperature
coefficient
RDS(ON)
Drain-source on resistance
VGS(TO)
Gate threshold voltage
Forward transconductance
gfs
IDSS
Drain-source leakage current
TYP. MAX. UNIT
IGSS
VGS = 10 V; ID = 1 A
VDS = VGS; ID = 0.25 mA
VDS = 30 V; ID = 1 A
VDS = 600 V; VGS = 0 V
VDS = 480 V; VGS = 0 V; Tj = 125 ˚C
Gate-source leakage current VGS = ±30 V; VDS = 0 V
Qg(tot)
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
ID = 2 A; VDD = 480 V; VGS = 10 V
-
20
2
9
25
3
15
nC
nC
nC
td(on)
tr
td(off)
tf
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
VDD = 300 V; RD = 150 Ω;
RG = 24 Ω
-
10
20
60
20
-
ns
ns
ns
ns
Ld
Ld
Internal drain inductance
Internal drain inductance
-
3.5
4.5
-
nH
nH
Ls
Internal source inductance
Measured from tab to centre of die
Measured from drain lead to centre of die
(SOT78 package only)
Measured from source lead to source
bond pad
-
7.5
-
nH
Ciss
Coss
Crss
Input capacitance
Output capacitance
Feedback capacitance
VGS = 0 V; VDS = 25 V; f = 1 MHz
-
236
34
20
-
pF
pF
pF
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
IS
Tmb = 25˚C
-
-
1.9
A
Tmb = 25˚C
-
-
7.6
A
VSD
Continuous source current
(body diode)
Pulsed source current (body
diode)
Diode forward voltage
IS = 2 A; VGS = 0 V
-
-
1.2
V
trr
Qrr
Reverse recovery time
Reverse recovery charge
IS = 2 A; VGS = 0 V; dI/dt = 100 A/µs
-
360
2.4
-
ns
µC
ISM
August 1998
MIN.
3
TYP. MAX. UNIT
Rev 1.100
Philips Semiconductors
Product specification
PowerMOS transistors
Avalanche energy rated
Normalised Power Derating
PD%
120
PHP2N60E, PHB2N60E, PHD2N60E
10
Zth j-mb / (K/W)
110
D=
100
90
80
1
70
0.5
0.2
60
50
0.1
0.05
40
0.1
30
0.02
20
10
tp
PD
D=
tp
T
0
t
T
0
0.01
0
20
40
60
80
100
Tmb / C
120
140
10us
Fig.1. Normalised power dissipation.
PD% = 100⋅PD/PD 25 ˚C = f(Tmb)
0.1s
10ms
Fig.4. Transient thermal impedance.
Zth j-mb = f(t); parameter D = tp/T
Normalised Current Derating
ID%
120
1ms
t/s
ID, Drain current (Amps)
4
PHP1N60A
20 V
Tj = 25 C
110
10 V
100
90
3
6.5 V
80
6V
70
60
50
2
5.5 V
40
30
1
5V
20
10
VGS = 4.5 V
0
0
20
40
60
80
Tmb / C
100
120
0
140
0
5
Fig.2. Normalised continuous drain current.
ID% = 100⋅ID/ID 25 ˚C = f(Tmb); conditions: VGS ≥ 10 V
10
D
S/I
Tmb = 25 C
)=
Drain-Source on resistance, RDS(ON) (Ohms)
5V
5.5 V
12
tp =
10 us
VD
N
S(O
25
30
Fig.5. Typical output characteristics.
ID = f(VDS); parameter VGS
PHP1N60
Drain current, ID (Amps)
10
15
20
VDS, Drain-Source voltage (Volts)
PHP1N60A
Tj = 25 C
10
RD
6V
100us
1
8
1 ms
DC
0.1
6.5 V
6
10 V
VGS = 20 V
10 ms
4
100ms
2
0.01
10
100
Drain-source voltage, VDS (Volts)
0
1000
Fig.3. Safe operating area. Tmb = 25 ˚C
ID & IDM = f(VDS); IDM single pulse; parameter tp
August 1998
0
1
2
3
Drain current, ID (Amps)
4
Fig.6. Typical on-state resistance.
RDS(ON) = f(ID); parameter VGS
4
Rev 1.100
Philips Semiconductors
Product specification
PowerMOS transistors
Avalanche energy rated
5
PHP2N60E, PHB2N60E, PHD2N60E
Drain current, ID (A)
VGS(TO) / V
PHP1N60A
VDS > ID x RDS(on)max
max.
4
4
typ.
3
3
min.
2
2
150 C
1
1
Tj = 25 C
0
0
0
2
4
6
Gate-source voltage, VGS (V)
8
-60
10
Transconductance, gfs (S)
-20
0
20
40
60
Tj / C
80
100
120
140
Fig.10. Gate threshold voltage.
VGS(TO) = f(Tj); conditions: ID = 0.25 mA; VDS = VGS
Fig.7. Typical transfer characteristics.
ID = f(VGS); parameter Tj
2
-40
PHP1N60A
1E-01
SUB-THRESHOLD CONDUCTION
ID / A
VDS > ID x RDS(on)max
1E-02
1.5
2%
1E-03
Tj = 25 C
typ
98 %
150 C
1
1E-04
0.5
0
1E-05
1E-06
0
1
2
3
Drain current, ID (A)
4
0
5
Fig.8. Typical transconductance.
gfs = f(ID); parameter Tj
2
VGS / V
3
4
Fig.11. Sub-threshold drain current.
ID = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS
Normalised RDS(ON) = f(Tj)
a
1
1000
PHP1N60A
Capacitances, Ciss, Coss, Crss (pF)
Ciss
2
100
Coss
1
10
Crss
0
-60
-40
-20
0
20
40 60
Tj / C
80
1
100 120 140
Fig.9. Normalised drain-source on-state resistance.
a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 1 A; VGS = 10 V
August 1998
1
10
100
Drain-source voltage, VDS (V)
1000
Fig.12. Typical capacitances, Ciss, Coss, Crss.
C = f(VDS); conditions: VGS = 0 V; f = 1 MHz
5
Rev 1.100
Philips Semiconductors
Product specification
PowerMOS transistors
Avalanche energy rated
20
PHP2N60E, PHB2N60E, PHD2N60E
Gate-Source voltage, VGS (Volts)
ID = 2 A
PHP1N60A
10
120 V
15
PHP1N60A
Source-drain diode current, IF(A)
VGS = 0 V
240 V
8
VDD = 480 V
150 C
Tj = 25 C
6
10
4
5
2
0
0
10
20
Gate charge, Qg (nC)
30
0
40
Switching times, td(on), tr, td(off), tf (ns)
0.5
1
Source-Drain voltage, VSDS (V)
1.5
Fig.16. Source-Drain diode characteristic.
IF = f(VSDS); parameter Tj
Fig.13. Typical turn-on gate-charge characteristics.
VGS = f(QG); parameter VDS
1000
0
PHP1N60A
VDD = 300 V
RD = 150 Ohms
Tj = 25 C
Non-repetitive Avalanche current, IAS (A)
10
100
Tj prior to avalanche = 25 C
td(off)
1
tr
tf
10
125 C
VDS
tp
td(on)
ID
1
0.1
1E-06
0
20
40
60
Gate resistance, RG (Ohms)
80
1E-05
100
1E-04
1E-03
1E-02
Avalanche time, tp (s)
Fig.14. Typical switching times; td(on), tr, td(off), tf = f(RG)
1.15
PHP2N60E
Fig.17. Maximum permissible non-repetitive
avalanche current (IAS) versus avalanche time (tp);
unclamped inductive load
Normalised Drain-source breakdown voltage
V(BR)DSS @ Tj
Maximum Repetitive Avalanche Current, IAR (A)
V(BR)DSS @ 25 C
10
1.1
1.05
Tj prior to avalanche = 25 C
1
1
125 C
0.1
0.95
0.9
0.85
-100
PHP2N60E
0.01
1E-06
-50
0
50
Tj, Junction temperature (C)
100
150
1E-04
1E-03
1E-02
Avalanche time, tp (s)
Fig.15. Normalised drain-source breakdown voltage;
V(BR)DSS/V(BR)DSS 25 ˚C = f(Tj)
August 1998
1E-05
Fig.18. Maximum permissible repetitive avalanche
current (IAR) versus avalanche time (tp)
6
Rev 1.100
Philips Semiconductors
Product specification
PowerMOS transistors
Avalanche energy rated
PHP2N60E, PHB2N60E, PHD2N60E
MECHANICAL DATA
Dimensions in mm
4,5
max
Net Mass: 2 g
10,3
max
1,3
3,7
2,8
5,9
min
15,8
max
3,0 max
not tinned
3,0
13,5
min
1,3
max 1 2 3
(2x)
0,9 max (3x)
2,54 2,54
0,6
2,4
Fig.19. SOT78 (TO220AB); pin 2 connected to mounting base.
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Refer to mounting instructions for SOT78 (TO220) envelopes.
3. Epoxy meets UL94 V0 at 1/8".
August 1998
7
Rev 1.100
Philips Semiconductors
Product specification
PowerMOS transistors
Avalanche energy rated
PHP2N60E, PHB2N60E, PHD2N60E
MECHANICAL DATA
Dimensions in mm
4.5 max
1.4 max
10.3 max
Net Mass: 1.4 g
11 max
15.4
2.5
0.85 max
(x2)
0.5
2.54 (x2)
Fig.20. SOT404 : centre pin connected to mounting base.
MOUNTING INSTRUCTIONS
Dimensions in mm
11.5
9.0
17.5
2.0
3.8
5.08
Fig.21. SOT404 : soldering pattern for surface mounting.
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Epoxy meets UL94 V0 at 1/8".
August 1998
8
Rev 1.100
Philips Semiconductors
Product specification
PowerMOS transistors
Avalanche energy rated
PHP2N60E, PHB2N60E, PHD2N60E
MECHANICAL DATA
Dimensions in mm : Net Mass: 1.4 g
seating plane
6.73 max
1.1
tab
2.38 max
0.93 max
5.4
4 min
6.22 max
10.4 max
4.6
2
1
0.5
0.5 min
3
0.3
0.5
0.8 max
(x2)
2.285 (x2)
Fig.22. SOT428 : centre pin connected to mounting base.
MOUNTING INSTRUCTIONS
Dimensions in mm
7.0
7.0
2.15
1.5
2.5
4.57
Fig.23. SOT428 : soldering pattern for surface mounting.
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Epoxy meets UL94 V0 at 1/8".
August 1998
9
Rev 1.100
Philips Semiconductors
Product specification
PowerMOS transistors
Avalanche energy rated
PHP2N60E, PHB2N60E, PHD2N60E
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
August 1998
10
Rev 1.100