BFG590; BFG590/X NPN 5 GHz wideband transistors Rev. 04 — 12 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. http://www.philips.semiconductors.com use http://www.nxp.com http://www.semiconductors.philips.com use http://www.nxp.com (Internet) [email protected] use [email protected] (email) The copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) - © Koninklijke Philips Electronics N.V. (year). All rights reserved is replaced with: - © NXP B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or phone (details via [email protected]). Thank you for your cooperation and understanding, NXP Semiconductors NXP Semiconductors Product specification NPN 5 GHz wideband transistors BFG590; BFG590/X FEATURES PINNING • High power gain DESCRIPTION PIN • Low noise figure BFG590 • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS BFG590/X 1 collector collector 2 base emitter 3 emitter base 4 emitter emitter • MATV/CATV amplifiers and RF communications subscriber equipment in the GHz range • Ideally suitable for use in class-A, (A)B and C amplifiers with either pulsed or continuous drive. handbook, 2 columns 4 3 DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143B plastic package. 1 2 Top view MARKING TYPE NUMBER MSB014 CODE BFG590 %MH BFG590/X %MN Fig.1 Simplified outline SOT143B. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter − − 20 V VCEO collector-emitter voltage open base − − 15 V IC collector current (DC) − − 200 mA Ptot total power dissipation Ts ≤ 60 °C − − 400 mW hFE DC current gain IC = 35 mA; VCE = 8 V 50 90 280 Cre feedback capacitance IC = 0; VCE = 8 V; f = 1 MHz − 0.7 − pF fT transition frequency IC = 80 mA; VCE = 4 V; f = 1 GHz − 5 − GHz GUM maximum unilateral power gain IC = 80 mA; VCE = 4 V; f = 900 MHz; Tamb = 25 °C − 13 − dB |S21|2 insertion power gain IC = 80 mA; VCE = 4 V; f = 900 MHz; Tamb = 25 °C − 11 − dB Rev. 04 - 12 November 2007 2 of 11 NXP Semiconductors Product specification NPN 5 GHz wideband transistors BFG590; BFG590/X LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 20 V VCEO collector-emitter voltage open base − 15 V VEBO emitter-base voltage open collector − 3 V IC collector current (DC) − 200 mA Ptot total power dissipation Ts ≤ 60 °C; see Fig.2; note 1 − 400 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 175 °C Note 1. Ts is the temperature at the soldering point of the collector pin. THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER CONDITIONS thermal resistance from junction to soldering point Ts ≤ 60 °C; note 1 VALUE UNIT 290 K/W Note 1. Ts is the temperature at the soldering point of the collector pin. MBG249 600 handbook, halfpage Ptot (mW) 400 200 0 0 50 100 150 200 Ts ( o C) Fig.2 Power derating curve. Rev. 04 - 12 November 2007 3 of 11 NXP Semiconductors Product specification NPN 5 GHz wideband transistors BFG590; BFG590/X CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER V(BR)CBO collector-base breakdown voltage CONDITIONS IC = 0.1 mA; IE = 0 MIN. TYP. MAX. UNIT 20 − − V V(BR)CEO collector-emitter breakdown voltage IC = 10 mA; IB = 0 15 − − V V(BR)EBO emitter-base breakdown voltage IE = 0.1 mA; IC = 0 3 − − V ICBO collector-base leakage current VCB = 10 V; IE = 0 − − 100 nA hFE DC current gain IC = 70 mA; VCE = 8 V; see Fig.3 60 120 250 fT transition frequency IC = 80 mA; VCE = 4 V; f = 1 GHz; see Fig.5 − 5 − GHz Cre feedback capacitance IC = 0; VCB = 8 V; f = 1 MHz; see Fig.4 − 0.7 − pF GUM maximum unilateral power gain; note 1 IC = 80 mA; VCE = 4 V; f = 900 MHz; Tamb = 25 °C − 13 − dB IC = 80 mA; VCE = 4 V; f = 2 GHz; Tamb = 25 °C − 7.5 − dB IC = 80 mA; VCE = 4 V; f = 900 MHz; Tamb = 25 °C − 11 − dB |S21|2 insertion power gain Note S 21 2 dB. 1. GUM is the maximum unilateral power gain, assuming S12 is zero and G UM = 10 log -------------------------------------------------------------( 1 – S 11 2 ) ( 1 – S 22 2 ) Rev. 04 - 12 November 2007 4 of 11 NXP Semiconductors Product specification NPN 5 GHz wideband transistors MRA749 250 BFG590; BFG590/X MLC057 1.2 handbook, halfpage handbook, halfpage hFE C re (pF) 200 0.8 150 100 0.4 50 0 10−2 10−1 1 10 IC (mA) 102 VCE = 8 V. Fig.3 0 0 2 4 6 8 10 VCB (V) IC = 0; f = 1 MHz. DC current gain as a function of collector current; typical values. Fig.4 Feedback capacitance as a function of collector-base voltage; typical values. MLC058 8 handbook, halfpage fT (GHz) 6 4 2 0 10 I C (mA) 102 VCE = 4 V; f = 1 GHz. Fig.5 Transition frequency as a function of collector current; typical values. Rev. 04 - 12 November 2007 5 of 11 NXP Semiconductors Product specification NPN 5 GHz wideband transistors BFG590; BFG590/X MLC059 30 handbook, halfpage MLC060 12 handbook, halfpage gain gain (dB) (dB) 20 G max 8 G UM G max G UM 10 4 0 0 0 20 40 100 80 I C (mA) 60 f = 900 MHz; VCE = 4 V. Fig.6 0 Gain as a function of collector current; typical values. Fig.7 MLC061 50 100 80 I C (mA) 60 Gain as a function of collector current; typical values. MLC062 50 handbook, halfpage gain gain (dB) G UM 40 40 f = 2 GHz; VCE = 4 V. handbook, halfpage (dB) 20 40 G UM MSG MSG 30 30 20 20 10 10 G max 0 G max 0 102 10 103 f (MHz) 104 IC = 20 mA; VCE = 4 V. Fig.8 102 10 103 f (MHz) 104 IC = 80 mA; VCE = 4 V. Gain as a function of frequency; typical values. Fig.9 Rev. 04 - 12 November 2007 Gain as a function of frequency; typical values. 6 of 11 NXP Semiconductors Product specification NPN 5 GHz wideband transistors BFG590; BFG590/X 90 o 1.0 handbook, full pagewidth 1 135 o 45 o 2 0.5 0.8 0.6 3 GHz 0.2 0.4 5 0.2 180 o 0.2 0 0.5 1 2 5 0o 0 5 0.2 40 MHz 0.5 2 135 o 45 o 1 MGC882 1.0 90 o IC = 80 mA; VCE = 4 V; Zo = 50 Ω. Fig.10 Common emitter input reflection coefficient (S11); typical values. 90 o handbook, full pagewidth 135 o 45 o 40 MHz 180 o 3 GHz 50 40 30 20 0o 10 135 o 45 o 90 o MGC805 IC = 80 mA; VCE = 4 V. Fig.11 Common emitter forward transmission coefficient (S21); typical values. Rev. 04 - 12 November 2007 7 of 11 NXP Semiconductors Product specification NPN 5 GHz wideband transistors BFG590; BFG590/X 90 o handbook, full pagewidth 3 GHz 135 o 45 o 40 MHz 180 o 0.25 0.20 0.15 0.10 0o 0.05 135 o 45 o 90 o MGC803 IC = 80 mA; VCE = 4 V. Fig.12 Common emitter reverse transmission coefficient (S12); typical values. 90 o 1.0 handbook, full pagewidth 1 135 o 45 o 2 0.5 0.8 0.6 0.2 0.4 5 0.2 180 o 0.2 0 0.5 1 2 5 0o 0 3 GHz 0.2 40 MHz 0.5 2 135 o 5 45 o 1 MGC804 1.0 90 o IC = 80 mA; VCE = 4 V; Zo = 50 Ω. Fig.13 Common emitter output reflection coefficient (S22); typical values. Rev. 04 - 12 November 2007 8 of 11 NXP Semiconductors Product specification NPN 5 GHz wideband transistors BFG590; BFG590/X PACKAGE OUTLINE Plastic surface mounted package; 4 leads SOT143B D B E A X y HE v M A e bp w M B 4 3 Q A A1 c 1 2 Lp b1 e1 detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp b1 c D E e e1 HE Lp Q v w y mm 1.1 0.9 0.1 0.48 0.38 0.88 0.78 0.15 0.09 3.0 2.8 1.4 1.2 1.9 1.7 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 SOT143B Rev. 04 - 12 November 2007 9 of 11 BFG590; BFG590/X NXP Semiconductors NPN 5 GHz wideband transistors Legal information Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. 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Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: [email protected] Rev. 04 - 12 November 2007 10 of 11 BFG590; BFG590/X NXP Semiconductors NPN 5 GHz wideband transistors Revision history Revision history Document ID Release date Data sheet status Change notice Supersedes BFG590_X_N_4 20071112 Product data sheet - BFG590_X_3 Modifications: • Fig. 1 and 2 on page 2; Figure note changed BFG590_X_3 (9397 750 04346) 19981002 Product specification - BFG590XR_2 BFG590XR_2 19950919 Product specification - BFG590XR_1 BFG590XR_1 19921101 Preliminary specification - - Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2007. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 12 November 2007 Document identifier: BFG590_X_N_4