PHILIPS PBYR620CTD

Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
FEATURES
PBYR625CTD series
SYMBOL
• Low forward volt drop
• Fast switching
• Reverse surge capability
• High thermal cycling performance
• Low thermal resistance
QUICK REFERENCE DATA
VR = 20 V/ 25 V
a2
3
a1
1
IO(AV) = 6 A
VF ≤ 0.44 V
k 2
GENERAL DESCRIPTION
PINNING
Dual schottky rectifier diodes
intended for use as output rectifiers
in low voltage, high frequency
switched mode power supplies.
The PBYR625CTD series is
supplied in the SOT428 surface
mounting package.
PIN
SOT428
DESCRIPTION
1
anode 1
2
cathode1
3
anode 2
tab
cathode
tab
2
1
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
PBYR6
VRRM
VRWM
VR
IO(AV)
IFRM
IFSM
IRRM
Tj
Tstg
Peak repetitive reverse
voltage
Working peak reverse
voltage
Continuous reverse voltage
Average rectified forward
current (both diodes
conducting)
Repetitive peak forward
current per diode
Non-repetitive peak forward
current per diode
Peak repetitive reverse
surge current per diode
Operating junction
temperature
Storage temperature
MAX.
UNIT
-
20CTD
20
25CTD
25
V
-
20
25
V
Tmb ≤ 124 ˚C
-
20
25
V
square wave; δ = 0.5; Tmb ≤ 138 ˚C
-
6
A
square wave; δ = 0.5; Tmb ≤ 138 ˚C
-
6
A
t = 10 ms
t = 8.3 ms
sinusoidal; Tj = 125 ˚C prior to
surge; with reapplied VRRM(max)
pulse width and repetition rate
limited by Tj max
-
65
70
A
A
-
1
A
-
150
˚C
- 65
175
˚C
1 it is not possible to make connection to pin 2 of the SOT428 package
March 1998
1
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
PBYR625CTD series
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
Rth j-mb
per diode
both diodes
pcb mounted, minimum footprint, FR4
board
Rth j-a
Thermal resistance junction
to mounting base
Thermal resistance junction
to ambient
MIN.
-
TYP. MAX. UNIT
50
4
3.5
-
K/W
K/W
K/W
ELECTRICAL CHARACTERISTICS
All characteristics are per diode at Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
VF
Forward voltage
IR
Reverse current
Cd
Junction capacitance
March 1998
CONDITIONS
MIN.
IF = 3 A; Tj = 125˚C
IF = 6 A; Tj = 125˚C
IF = 6 A
VR = VRWM
VR = VRWM; Tj = 100˚C
VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C
2
-
TYP. MAX. UNIT
0.38
0.50
0.61
0.05
5
160
0.44
0.59
0.68
3
10
-
V
V
V
mA
mA
pF
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
2.5
PBYR625CTD series
Forward dissipation, PF (W) PBYR625CTD Tmb(max) / C
Vo = 0.31 V
Rs = 0.046 Ohms
100mA
142
10mA
BYV116
IR / A
D = 1.0
150 C
2
0.5
125 C
0.2
1.5
140
0.1
144
1mA
146
100uA
100 C
75 C
1
tp
I
D=
tp
T
50 C
148
0.5
T
0
0
10uA Tj = 25 C
t
150
5
1
2
3
4
Average forward current, IF(AV) (A)
1uA
Fig.1. Maximum forward dissipation PF = f(IF(AV)) per
diode; square current waveform where
IF(AV) =IF(RMS) x √D.
2
Forward dissipation, PF (W)
PBYR625CTD Tmb(max) / C
Vo = 0.31 V
Rs = 0.046 Ohms
0
5
10
VR / V
15
20
25
Fig.4. Typical reverse leakage current per diode;
IR = f(VR); parameter Tj
1000
142
BYV116
Cd / pF
a = 1.57
2.2
1.5
1.9
144
2.8
4
1
146
0.5
148
0
0
0.5
1
1.5
2
Average forward current, IF(AV) (A)
2.5
100
150
3
10
Fig.2. Maximum forward dissipation PF = f(IF(AV)) per
diode; sinusoidal current waveform where a = form
factor = IF(RMS) / IF(AV).
10
10
VR / V
100
Fig.5. Typical junction capacitance per diode;
Cd = f(VR); f = 1 MHz; Tj = 25˚C to 125 ˚C.
BYV116
IF / A
1
10
Transient thermal impedance, Zth j-mb (K/W)
Tj = 25 C
Tj = 125 C
8
1
6
typ
max
0.1
4
PD
0.01
tp
D=
2
0
0
0.2
0.4
VF / V
0.6
0.8
0.001
1us
1
Fig.3. Typical and maximum forward characteristic
IF = f(VF); parameter Tj
March 1998
T
10us
tp
T
t
100us 1ms
10ms 100ms
1s
10s
pulse width, tp (s)
PBYR325CTD
Fig.6. Transient thermal impedance; per diode;
Zth j-mb = f(tp).
3
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
PBYR625CTD series
MECHANICAL DATA
Dimensions in mm : Net Mass: 1.4 g
seating plane
6.73 max
1.1
tab
2.38 max
0.93 max
5.4
4 min
6.22 max
10.4 max
4.6
2
1
0.5
0.5 min
3
0.3
0.5
0.8 max
(x2)
2.285 (x2)
Fig.7. SOT428 : centre pin connected to mounting base.
MOUNTING INSTRUCTIONS
Dimensions in mm
7.0
7.0
2.15
1.5
2.5
4.57
Fig.8. SOT428 : soldering pattern for surface mounting.
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Epoxy meets UL94 V0 at 1/8".
March 1998
4
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
PBYR625CTD series
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
March 1998
5
Rev 1.000