SIEGET 25 BFP405 NPN Silicon RF Transistor 3 For low current applications 4 For oscillators up to 12 GHz Noise figure F = 1.25 dB at 1.8 GHz outstanding G ms = 23 dB at 1.8 GHz 2 Transition frequency f T = 25 GHz Gold metallization for high reliability 1 VPS05605 SIEGET 25 GHz f T - Line ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP405 ALs Pin Configuration 1=B 2=E 3=C Package 4=E SOT343 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 4.5 Collector-base voltage VCBO 15 Emitter-base voltage VEBO 1.5 Collector current IC 12 Base current IB 1 Total power dissipation Ptot 55 Value Unit V mA mW TS 120°C 1) Junction temperature Tj 150 Ambient temperature TA -65 ... 150 Storage temperature Tstg -65 ... 150 °C Thermal Resistance Junction - soldering point 2) RthJS 520 K/W 1T is measured on the emitter lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance thJA 1 Aug-20-2001 SIEGET 25 BFP405 Electrical Characteristics at TA = 25°C, unless otherwise specified. Symbol Values Parameter Unit min. typ. max. 4.5 5 - V ICBO - - 150 nA IEBO - - 15 µA hFE 50 90 150 - 18 25 - - 0.05 0.1 - 0.24 - - 0.29 - - 1.25 - - 23 - 14 18 - - 15 - - 5 - DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 1.5 V, IC = 0 DC current gain IC = 5 mA, VCE = 4 V V(BR)CEO AC characteristics (verified by random sampling) Transition frequency fT IC = 10 mA, VCE = 3 V, f = 2 GHz Collector-base capacitance Ccb VCB = 2 V, f = 1 MHz Collector-emitter capacitance Cce VCE = 2 V, f = 1 MHz Emitter-base capacitance Ceb VEB = 0.5 V, f = 1 MHz Noise figure F IC = 2 mA, VCE = 2 V, ZS = ZSopt , f = 1.8 GHz Gms Power gain 1) IC = 5 mA, VCE = 2 V, ZS = ZSopt , ZL = ZLopt , f = 1.8 GHz Insertion power gain |S21|2 IC = 5 mA, VCE = 2 V, f = 1.8 MHz, ZS = ZL = 50 Third order intercept point IP3 IC = 5 mA, VCE = 2 V, ZS=ZSopt , ZL=ZLopt , f = 1.8 GHz 1dB Compression point P-1dB IC = 5 mA, VCE = 2 V, f = 1.8 GHz, ZS=ZSopt , ZL =ZLopt 1G ms GHz pF dB dBm = |S21 / S12 | 2 Aug-20-2001 SIEGET 25 BFP405 SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 0.21024 fA BF = 83.23 - NF = 1.0405 - VAF = 39.251 V IKF = 0.16493 A ISE = 15.761 fA NE = 1.7763 - BR = 10.526 - NR = 0.96647 - VAR = 34.368 V IKR = 0.25052 A ISC = 0.037223 fA NC = 1.3152 - RB = 15 IRB = 0.21215 mA RBM = 1.3491 RE = 1.9289 RC = 0.12691 CJE = 3.7265 fF VJE = 0.70367 V MJE = 0.37747 - TF = 4.5899 ps XTF = 0.3641 - VTF = 0.19762 V ITF = 1.3364 mA PTF = 0 deg CJC = 96.941 fF VJC = 0.99532 V MJC = 0.48652 - XCJC = 0.08161 - TR = 1.4935 ns CJS = 0 fF VJS = 0.75 V MJS = 0 - XTB = 0 - EG = 1.11 eV XTI = 3 - FC = 0.99469 - TNOM 300 K - RS = 20 L BI = 0.47 nH L BO = 0.53 nH L EI = 0.23 nH L EO = 0.05 nH L CI = 0.56 nH L CO = 0.58 nH CBE = 136 fF CCB = 6.9 fF CCE = 134 fF C'-E'-Diode Data (Berkley-SPICE 2G.6 Syntax) : IS = 2 fA N= 1.02 All parameters are ready to use, no scaling is necessary Package Equivalent Circuit: Valid up to 6GHz The SOT-343 package has two emitter leads. To avoid high complexity of the package equivalent circuit, both leads are combined in one electrical connection. Extracted on behalf of Infineon Technologies AG by: Institut für Mobil-und Satellitentechnik (IMST) For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/silicondiscretes 3 Aug-20-2001 SIEGET 25 BFP405 For non-linear simulation: Use transistor chip parameters in Berkeley SPICE 2G.6 syntax for all simulators. If you need simulation of the reverse characteristics, add the diode with the C'-E'- diode data between collector and emitter. Simulation of package is not necessary for frequencies < 100MHz. For higher frequencies add the wiring of package equivalent circuit around the non-linear transistor and diode model. Note: This transistor is constructed in a common emitter configuration. This feature causes an additional reverse biased diode between emitter and collector, which does not effect normal operation. C B E E EHA07307 Transistor Schematic Diagram The common emitter configuration shows the following advantages: Higher gain because of lower emitter inductance. Power is dissipated via the grounded emitter leads, because the chip is mounted on copper emitter leadframe. Please note, that the broadest lead is the emitter lead. Common Emitter S- and Noise-parameter For detailed S- and Noise-parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies Application Notes CD-ROM or see Internet: http://www.infineon.com/silicondiscretes 4 Aug-20-2001 SIEGET 25 Total power dissipation Ptot = f (TS ) BFP405 Transition frequency fT = f (IC) f = 2 GHz VCE = parameter in V 100 30 GHz mW 1.5 to 4 80 24 1 22 0.75 20 fT P tot 70 60 18 16 50 14 12 40 0.5 10 30 8 6 20 4 10 0 0 2 20 40 60 80 100 120 °C 0 0 150 2 4 6 8 mA 10 TS 14 IC Permissible Pulse Load RthJS = f (tp) Permissible Pulse Load P totmax/P totDC = f (tp) 10 1 RthJS Ptotmax / PtotDC 10 3 K/W D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 - 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 2 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 10 0 -7 10 0 tp 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 5 Aug-20-2001 SIEGET 25 BFP405 Power gain Gma, Gms , |S21 |2 = f (f) Power gain Gma, Gms = f (I C) VCE = 2 V, IC = 5 mA VCE = 2V f = parameter in GHz 40 32 dB 0.9 dB 32 1.8 24 2.4 24 G G 28 20 20 3 4 16 5 16 6 12 12 8 Gm |S 2 8 4 4 0 0.0 1.0 2.0 3.0 4.0 GHz 0 0 6.0 2 4 6 8 10 mA 14 IC f Power gain Gma,Gms = f (VCE ) Collector-base capacitance Ccb = f (VCB) IC=5mA f = 1MHz f = parameter in GHz 0.30 30 GHz 0.9 1.8 22 2.4 3 G 20 18 Ccb pF 24 4 16 0.20 0.15 5 14 6 12 0.10 10 8 6 0.05 4 2 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 V 0.00 0.0 4.5 VCE 0.5 1.0 1.5 2.0 2.5 3.0 V 4.0 VCB 6 Aug-20-2001 SIEGET 25 Noise figure F = f (IC ) Noise figure F = f (IC) VCE = 2 V, ZS = ZSopt VCE = 2 V, f = 1.8 GHz 4.0 BFP405 4.0 dB dB 2.5 2.5 F 3.0 F 3.0 2.0 2.0 1.5 1.5 f = 6 GHz f = 5 GHz f = 4 GHz f = 3 GHz f = 2.4 GHz f = 1.8 GHz f = 0.9 GHz 1.0 0.5 0.0 0 2 4 6 8 mA ZS = 50 Ohm ZS = ZSopt 1.0 0.5 0.0 0 12 2 4 6 mA 8 IC 12 IC Noise figure F = f ( f ) Source impedance for min. VCE = 2 V, ZS = ZSopt Noise Figure versus Frequency VCE = 2V, I C = 2mA / 5 mA 3.0 +j50 +j25 dB +j100 +j10 2.0 4GHz 3GHz 1.8GHz F 5GHz 0.9GHz 6GHz 0 1.5 IC = 5 mA IC = 2 mA 1.0 10 25 50 2mA 5mA -j10 0.5 100 -j25 -j100 -j50 0.0 0.0 1.0 2.0 3.0 4.0 GHz 6.0 f 7 Aug-20-2001