BLF573S HF / VHF power LDMOS transistor Rev. 01 — 8 December 2008 Preliminary data sheet 1. Product profile 1.1 General description A 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific and medical applications in the HF to 500 MHz band. Table 1. Production test information Mode of operation CW f VDS PL Gp ηD (MHz) (V) (W) (dB) (%) 225 50 300 26.5 70 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features n Typical CW performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq of 900 mA: u Average output power = 300 W u Power gain = 26.5 dB u Efficiency = 70 % n Easy power control n Integrated ESD protection n Excellent ruggedness n High efficiency n Excellent thermal stability n Designed for broadband operation (HF and VHF band) n Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications n Industrial, scientific and medical applications n Broadcast transmitter applications BLF573S NXP Semiconductors HF / VHF power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description 1 drain 2 gate 3 source Simplified outline Graphic symbol 1 1 3 [1] 2 2 3 sym112 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number BLF573S Package Name Description Version - earless flanged LDMOST ceramic package, 2 leads SOT502B 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS Conditions Min Max Unit drain-source voltage - 110 V VGS gate-source voltage −0.5 +11 V ID drain current - 42 A Tstg storage temperature −65 +150 °C Tj junction temperature - 225 °C 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Rth(j-c) thermal resistance from junction to case Tcase = 80 °C; PL = 300 W [1] Typ Unit 0.21 K/W Rth(j-c) is measured under RF conditions. BLF573S_1 Preliminary data sheet [1] © NXP B.V. 2008. All rights reserved. Rev. 01 — 8 December 2008 2 of 14 BLF573S NXP Semiconductors HF / VHF power LDMOS transistor 6. Characteristics Table 6. DC characteristics Tj = 25 °C unless otherwise specified Symbol Parameter Conditions V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 3.75 mA Min Typ Max Unit 110 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 375 mA 1.25 1.7 2.25 V VGSq gate-source quiescent voltage VDS = 50 V; ID = 900 mA 1.45 1.95 2.45 V IDSS drain leakage current VGS = 0 V; VDS = 50 V - - 4.2 µA IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V 44 56 - A IGSS gate leakage current VGS = 11 V; VDS = 0 V - - 420 nA gfs forward transconductance VDS = 10 V; ID = 18.75 A - 20 - S RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 12.49 A - 0.09 - Ω Crs feedback capacitance VGS = 0 V; VDS = 50 V; f = 1 MHz - 2.3 - pF Ciss input capacitance VGS = 0 V; VDS = 50 V; f = 1 MHz - 300 - pF Coss output capacitance VGS = 0 V; VDS = 50 V; f = 1 MHz - 103 - pF Table 7. RF characteristics Mode of operation: CW; f = 225 MHz; RF performance at VDS = 50 V; IDq = 900 mA; Tcase = 25 °C; unless otherwise specified; in a class-AB production test circuit Symbol Parameter Conditions Min Typ Max Unit Gp power gain PL = 300 W 25 26.5 28 dB RLin input return loss PL = 300 W 10 13 - dB ηD drain efficiency PL = 300 W 67 70 - % BLF573S_1 Preliminary data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 8 December 2008 3 of 14 BLF573S NXP Semiconductors HF / VHF power LDMOS transistor 001aaj141 800 Coss (pF) 600 400 200 0 0 10 20 30 40 50 VDS (V) VGS = 0 V; f = 1 MHz. Fig 1. Output capacitance as a function of drain-source voltage; capacitance value without internal matching 6.1 Ruggedness in class-AB operation The BLF573S is capable of withstanding a load mismatch corresponding to VSWR = 13 : 1 through all phases under the following conditions: VDS = 50 V; IDq = 900 mA; PL = 300 W; f = 225 MHz. 7. Application information 7.1 Impedance information Table 8. Typical impedance Measured ZS and ZL test circuit impedances. f ZS ZL MHz Ω Ω 225 0.7 + j2.0 1.95 + j2.0 drain ZL gate ZS 001aaf059 Fig 2. Definition of transistor impedance BLF573S_1 Preliminary data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 8 December 2008 4 of 14 BLF573S NXP Semiconductors HF / VHF power LDMOS transistor 7.2 Reliability 001aaj142 105 Years (1) (2) (3) (4) (5) (7) (8) (9) (10) (11) (6) 104 103 102 10 1 0 4 8 12 16 20 Idc (A) TTF (0.1 % failure fraction). (1) Tj = 100 °C (2) Tj = 110 °C (3) Tj = 120 °C (4) Tj = 130 °C (5) Tj = 140 °C (6) Tj = 150 °C (7) Tj = 160 °C (8) Tj = 170 °C (9) Tj = 180 °C (10) Tj = 190 °C (11) Tj = 200 °C Fig 3. BLF573S electromigration (ID, total device) BLF573S_1 Preliminary data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 8 December 2008 5 of 14 BLF573S NXP Semiconductors HF / VHF power LDMOS transistor 8. Test information 8.1 RF Performance The following figures are measured in a class-AB production test circuit. 8.1.1 1-Tone CW 001aaj143 30 ηD (%) ηD Gp (dB) 28 001aaj144 30 80 Gp (dB) 60 28 26 40 26 24 20 24 (7) (6) (5) Gp 22 0 100 200 0 400 300 (1) (2) (3) (4) 22 0 100 200 PL (W) 300 400 PL (W) VDS = 50 V; IDq = 900 mA; f = 225 MHz. VDS = 50 V; f = 225 MHz. (1) IDq = 500 mA (2) IDq = 700 mA (3) IDq = 900 mA (4) IDq = 1100 mA (5) IDq = 1300 mA (6) IDq = 1500 mA (7) IDq = 1700 mA Fig 4. Power gain and drain efficiency as functions of load power; typical values Fig 5. Power gain as function of load power; typical values BLF573S_1 Preliminary data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 8 December 2008 6 of 14 BLF573S NXP Semiconductors HF / VHF power LDMOS transistor 001aaj145 60 PL (dBm) 58 ideal PL (2) 56 (1) PL 54 52 50 24 26 28 30 32 34 Pi (dBm) VDS = 50 V; IDq = 900 mA; f = 225 MHz. (1) PL(1dB) = 55.2 dBm (331 W) (2) PL(3dB) = 55.8 dBm (380 W) Fig 6. Load power as function of input power; typical values BLF573S_1 Preliminary data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 8 December 2008 7 of 14 BLF573S NXP Semiconductors HF / VHF power LDMOS transistor 8.1.2 2-Tone CW 001aaj146 30 Gp (dB) ηD (%) ηD 28 26 Gp 24 22 0 100 200 300 IMD3 (dBc) 60 −20 40 −40 20 001aaj147 0 80 (1) (2) (3) (4) (5) (6) (7) (8) −60 −80 0 400 500 PL(PEP) (W) 0 VDS = 50 V; IDq = 900 mA; f1 = 224.95 MHz; f2 = 225.05 MHz. 100 200 300 400 500 PL(PEP) (W) VDS = 50 V; f1 = 224.95 MHz; f2 = 225.05 MHz. (1) IDq = 500 mA (2) IDq = 700 mA (3) IDq = 900 mA (4) IDq = 1100 mA (5) IDq = 1300 mA (6) IDq = 1500 mA (7) IDq = 1700 mA (8) IDq = 1800 mA Fig 7. Power gain and drain efficiency as functions of peak envelope load power; typical values Fig 8. Third order intermodulation distortion as a function of peak envelope load power; typical values 8.2 Test circuit Table 9. List of components For production test circuit, see Figure 9 and Figure 10. Printed-Circuit Board (PCB): Rogers 5880; εr = 2.2 F/m; height = 0.79 mm; Cu (top/bottom metallization); thickness copper plating = 35 µm. Component Description Value B1 ferrite SMD bead 100 Ω; 100 MHz Remarks Ferroxcube BDS3/3/8.9-4S2 or equivalent C1, C18 multilayer ceramic chip capacitor 100 pF [1] C2 multilayer ceramic chip capacitor 39 pF [1] C3, C4 multilayer ceramic chip capacitor 180 pF [1] C5, C6, C7 multilayer ceramic chip capacitor 220 pF [1] C8, C20 multilayer ceramic chip capacitor 1 nF [1] C9 multilayer ceramic chip capacitor 4.7 µF C10 multilayer ceramic chip capacitor 30 pF [1] C11, C12, C13 multilayer ceramic chip capacitor 51 pF [1] C14 43 pF [1] multilayer ceramic chip capacitor TDK C4532X7R1E475MT020U or equivalent BLF573S_1 Preliminary data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 8 December 2008 8 of 14 BLF573S NXP Semiconductors HF / VHF power LDMOS transistor Table 9. List of components …continued For production test circuit, see Figure 9 and Figure 10. Printed-Circuit Board (PCB): Rogers 5880; εr = 2.2 F/m; height = 0.79 mm; Cu (top/bottom metallization); thickness copper plating = 35 µm. Component Description Value Remarks C15 multilayer ceramic chip capacitor 33 pF [1] C16 multilayer ceramic chip capacitor 36 pF [1] C17 multilayer ceramic chip capacitor 16 pF [1] C19 electrolytic capacitor 220 µF; 63 V L1 2 turns enamelled copper wire D = 3 mm; d = 1 mm; length = 2 mm; leads = 2 × 6 mm L2 4 turns enamelled copper wire D = 2 mm; d = 1 mm; length = 13 mm; leads = 2 × 5 mm L3 stripline - (L × W) 96 mm × 3 mm L4, L5 stripline - (L × W) 15 mm × 8 mm L6 stripline - (L × W) 105 mm × 6 mm L7 stripline - (L × W) 3 mm × 6 mm L8 stripline - (L × W) 12 mm × 6 mm R1 metal film resistor 100 Ω; 0.6 W [1] American Technical Ceramics type 100B or capacitor of same quality. VDD C19 VGG C9 B1 C8 C20 R1 L1 C13 input 50 Ω C1 C3 C14 C7 L7 L3 L4 C2 L5 C4 C5 C6 L2 L6 C16 C10 C11 L8 C18 output 50 Ω C17 C12 C15 001aaj148 Fig 9. Class-AB common-source production test circuit BLF573S_1 Preliminary data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 8 December 2008 9 of 14 BLF573S NXP Semiconductors HF / VHF power LDMOS transistor B1 C19 C9 C8 C7 C3 C20 C13 C14 R1 L2 L1 C18 C1 C2 C4 C5 C6 C17 C16 C11 C12 C10 C15 001aaj149 Fig 10. Component layout for class-AB production test circuit BLF573S_1 Preliminary data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 8 December 2008 10 of 14 BLF573S NXP Semiconductors HF / VHF power LDMOS transistor 9. Package outline Earless flanged LDMOST ceramic package; 2 leads SOT502B D A F 3 D D1 c U1 1 L H E1 U2 E 2 w2 M D M b 0 5 Q 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 4.72 3.43 12.83 12.57 0.15 0.08 inches 0.186 0.135 0.505 0.006 0.495 0.003 OUTLINE VERSION E E1 F H L Q U1 U2 w2 20.02 19.96 19.61 19.66 9.50 9.30 9.53 9.25 1.14 0.89 19.94 18.92 5.33 4.32 1.70 1.45 20.70 20.45 9.91 9.65 0.25 0.788 0.786 0.772 0.774 0.374 0.375 0.366 0.364 0.045 0.785 0.035 0.745 0.210 0.170 0.067 0.815 0.057 0.805 D D1 REFERENCES IEC JEDEC JEITA 0.390 0.010 0.380 EUROPEAN PROJECTION ISSUE DATE 03-01-10 07-05-09 SOT502B Fig 11. Package outline SOT502B BLF573S_1 Preliminary data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 8 December 2008 11 of 14 BLF573S NXP Semiconductors HF / VHF power LDMOS transistor 10. Abbreviations Table 10. Abbreviations Acronym Description CW Continuous Wave EDGE Enhanced Data rates for GSM Evolution GSM Global System for Mobile communications HF High Frequency LDMOS Laterally Diffused Metal-Oxide Semiconductor LDMOST Laterally Diffused Metal-Oxide Semiconductor Transistor RF Radio Frequency SMD Surface Mount Device TTF Time To Failure VHF Very High Frequency VSWR Voltage Standing-Wave Ratio 11. Revision history Table 11. Revision history Document ID Release date Data sheet status Change notice Supersedes BLF573S_1 20081208 Preliminary data sheet - - BLF573S_1 Preliminary data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 8 December 2008 12 of 14 BLF573S NXP Semiconductors HF / VHF power LDMOS transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 12.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BLF573S_1 Preliminary data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 8 December 2008 13 of 14 BLF573S NXP Semiconductors HF / VHF power LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 6.1 7 7.1 7.2 8 8.1 8.1.1 8.1.2 8.2 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation. . . . . . . . . . 4 Application information. . . . . . . . . . . . . . . . . . . 4 Impedance information . . . . . . . . . . . . . . . . . . . 4 Reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 6 RF Performance . . . . . . . . . . . . . . . . . . . . . . . . 6 1-Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 2-Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Contact information. . . . . . . . . . . . . . . . . . . . . 13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 8 December 2008 Document identifier: BLF573S_1