PD -97151 IRFH7934PbF HEXFET® Power MOSFET Applications l l Control MOSFET of Sync-Buck Converters used for Notebook Processor Power Control MOSFET for Isolated DC-DC VDSS 30V RDS(on) max Qg 3.5m @VGS = 10V 20nC : Converters in Networking Systems Benefits l l l l l l l l Very low RDS(ON) at 4.5V VGS Low Gate Charge Fully Characterized Avalanche Voltage and Current 100% Tested for RG Lead-Free (Qualified up to 260°C Reflow) RoHS compliant (Halogen Free) Low Thermal Resistance Large Source Lead for more reliable Soldering S S S D D G D D PQFN 5X6 Absolute Maximum Ratings Max. Units 30 ± 20 V ID @ TA = 25°C Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Parameter ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 19 ID @ TC = 25°C 76 IDM Continuous Drain Current, VGS @ 10V Pulsed Drain Current 190 PD @TA = 25°C Power Dissipation 3.1 VDS VGS 24 c PD @TA = 70°C g Power Dissipation g TJ Linear Derating Factor Operating Junction and TSTG Storage Temperature Range A W 2.0 g W/°C 0.025 -55 to + 150 °C Thermal Resistance Parameter f RθJC Junction-to-Case RθJA Junction-to-Ambient g Typ. Max. ––– 2.9 ––– 40 Units °C/W ORDERING INFORMATION: See detailed ordering and shipping information on the last page of this data sheet. Notes through are on page 10 www.irf.com 1 2/11/09 IRFH7934PbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 30 ––– ––– ΔΒVDSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.021 ––– RDS(on) Static Drain-to-Source On-Resistance ––– 2.9 3.5 ––– 4.2 5.1 V V/°C Reference to 25°C, ID = 1mA mΩ VGS(th) Gate Threshold Voltage 1.35 1.8 2.35 V ΔVGS(th) Gate Threshold Voltage Coefficient ––– -6.5 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 1.0 ––– ––– 150 Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 gfs Forward Transconductance 110 ––– ––– Qg IGSS Conditions VGS = 0V, ID = 250μA μA nA S VGS = 10V, ID = 24A VGS = 4.5V, ID = 19A e e VDS = VGS, ID = 50μA VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VDS = 15V, ID = 19A Total Gate Charge ––– 20 30 Qgs1 Pre-Vth Gate-to-Source Charge ––– 4.8 ––– VDS = 15V Qgs2 Post-Vth Gate-to-Source Charge ––– 2.5 ––– VGS = 4.5V Qgd Gate-to-Drain Charge ––– 6.3 ––– Qgodr Gate Charge Overdrive ––– 6.4 ––– Qsw Switch Charge (Qgs2 + Qgd) ––– 8.8 ––– Qoss RG Output Charge ––– 15 ––– nC Gate Resistance ––– 1.7 3.1 Ω td(on) Turn-On Delay Time ––– 12 ––– VDD = 15V, VGS = 4.5V tr Rise Time ––– 16 ––– ID = 19A td(off) Turn-Off Delay Time ––– 14 ––– tf Fall Time ––– 7.5 ––– Ciss Input Capacitance ––– 3100 ––– Coss Output Capacitance ––– 623 ––– Crss Reverse Transfer Capacitance ––– 241 ––– nC ID = 19A See Fig.17 & 18 ns VDS = 16V, VGS = 0V RG=1.8Ω See Fig.15 VGS = 0V pF VDS = 15V ƒ = 1.0MHz Avalanche Characteristics EAS Parameter Single Pulse Avalanche Energy IAR Avalanche Current c d Typ. Max. Units ––– 97 mJ ––– 19 A Diode Characteristics Parameter IS Continuous Source Current ISM (Body Diode) Pulsed Source Current Min. Typ. Max. Units ––– ––– Conditions MOSFET symbol 3.9 A showing the integral reverse D G ––– 190 VSD (Body Diode) Diode Forward Voltage ––– ––– ––– 1.0 V p-n junction diode. TJ = 25°C, IS = 19A, VGS = 0V trr Reverse Recovery Time ––– 20 30 ns TJ = 25°C, IF = 19A, VDD = 15V Qrr Reverse Recovery Charge ––– 28 42 nC di/dt = 325A/μs ton Forward Turn-On Time 2 c S e eSee Fig.16 Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) www.irf.com IRFH7934PbF 1000 1000 100 BOTTOM TOP 10 2.7V ≤ 60μs PULSE WIDTH Tj = 25°C ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 10V 5.0V 4.5V 3.5V 3.3V 3.0V 2.9V 2.7V 100 BOTTOM 2.7V 10 ≤ 60μs PULSE WIDTH Tj = 150°C 1 1 0.1 1 10 100 0.1 VDS, Drain-to-Source Voltage (V) 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics 1000 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) VGS 10V 5.0V 4.5V 3.5V 3.3V 3.0V 2.9V 2.7V 100 TJ = 150°C 10 TJ = 25°C 1 0.1 VDS = 15V ≤ 60μs PULSE WIDTH 0.01 1.0 2.0 3.0 4.0 5.0 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com ID = 24A VGS = 10V 1.5 1.0 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature (°C) Fig 4. Normalized On-Resistance vs. Temperature 3 IRFH7934PbF 14 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd VGS, Gate-to-Source Voltage (V) C, Capacitance (pF) 100000 Coss = Cds + Cgd 10000 Ciss 1000 Coss Crss ID= 19A 12 VDS= 15V 10 8 6 4 2 0 100 1 10 0 100 20 30 40 50 60 70 Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 ID, Drain-to-Source Current (A) 1000 ISD, Reverse Drain Current (A) 10 QG Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) 100 TJ = 150°C 10 TJ = 25°C 1 VGS = 0V 0.2 0.4 0.6 0.8 1.0 VSD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage OPERATION IN THIS AREA LIMITED BY R DS (on) 100 100μsec 10 1msec DC 1 10msec TA = 25°C Tj = 150°C Single Pulse 0.1 0.1 4 VDS= 24V 1.2 0.1 1 10 100 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRFH7934PbF VGS(th) Gate threshold Voltage (V) 25 ID , Drain Current (A) 20 15 10 5 2.0 ID = 50μA 1.6 1.2 0 0.8 25 50 75 100 125 150 -75 -50 -25 0 25 50 75 100 125 150 TJ , Temperature ( °C ) TJ , Ambient Temperature (°C) Fig 9. Maximum Drain Current vs. Ambient Temperature Fig 10. Threshold Voltage vs. Temperature 100 Thermal Response ( ZthJC ) D = 0.50 10 0.20 0.10 0.05 0.02 0.01 1 τJ 0.1 R1 R1 τJ τ1 R2 R2 R3 R3 R4 R4 τC τ1 τ2 τ2 τ3 τ3 τ4 τ4 Ci= τi/Ri Ci i/Ri 0.01 SINGLE PULSE ( THERMAL RESPONSE ) τ Ri (°C/W) τι (sec) 6.955975 0.065034 15.08336 5.307554 1.818966 0.00141 16.08526 0.757022 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 14 EAS, Single Pulse Avalanche Energy (mJ) ( Ω) RDS (on), Drain-to -Source On Resistance m IRFH7934PbF ID = 24A 12 10 8 6 TJ = 125°C 4 TJ = 25°C 2 0 2 3 4 5 6 7 8 9 10 400 I D 2.5A 3.7A BOTTOM 19A TOP 300 200 100 0 25 VGS, Gate-to-Source Voltage (V) 50 75 VDS VGS + V - DD IAS 20V RD D.U.T. RG DRIVER D.U.T RG 150 Fig 13. Maximum Avalanche Energy vs. Drain Current 15V VDS 125 Starting TJ, Junction Temperature (°C) Fig 12. On-Resistance vs. Gate Voltage L 100 + -VDD V10V GS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 A 0.01Ω tp Fig 14a. Unclamped Inductive Test Circuit V(BR)DSS tp Fig 15a. Switching Time Test Circuit VDS 90% 10% VGS I AS Fig 14b. Unclamped Inductive Waveforms 6 td(on) tr td(off) tf Fig 15b. Switching Time Waveforms www.irf.com IRFH7934PbF D.U.T Driver Gate Drive P.W. + - - - * D.U.T. ISD Waveform Reverse Recovery Current + RG • • • • dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test V DD P.W. Period VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + D= Period + - Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent ISD Ripple ≤ 5% * VGS = 5V for Logic Level Devices Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs Current Regulator Same Type as D.U.T. Id Vds Vgs 50KΩ 12V .2μF .3μF D.U.T. + V - DS Vgs(th) VGS 3mA IG ID Qgs1 Qgs2 Qgd Qgodr Current Sampling Resistors Fig 17. Gate Charge Test Circuit www.irf.com Fig 18. Gate Charge Waveform 7 IRFH7934PbF PQFN Package Details Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 www.irf.com IRFH7934PbF PQFN Part Marking PQFN Tape and Reel Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ www.irf.com 9 IRFH7934PbF Orderable part number Package Type IRFH7934TRPBF PQFN 5mm x 6mm Standard Pack Form Quantity Tape and Reel 4000 Note Qualification information† Qualification level Moisture Sensitivity Level RoHS compliant Cons umer (per JE DE C JE S D47F PQFN 5mm x 6mm †† ††† guidelines ) MS L2 †††† ††† (per JE DE C J-S T D-020D ) Yes † Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability †† Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ ††† Applicable version of JEDEC standard at the time of product release. †††† Higher MSL ratings may be available for the specific package types listed here. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.535mH, RG = 25Ω, IAS = 19A. Pulse width ≤ 400μs; duty cycle ≤ 2%. Rthjc is guaranteed by design When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.2/2009 10 www.irf.com