DISCRETE SEMICONDUCTORS DATA SHEET BFT46 N-channel silicon FET Product specification File under Discrete Semiconductors, SC07 December 1997 Philips Semiconductors Product specification N-channel silicon FET BFT46 DESCRIPTION Symmetrical n-channel silicon epitaxial planar junction field-effect transistor in a microminiature plastic envelope. The transistor is intended for low level general purpose amplifiers in thick and thin-film circuits. handbook, halfpage 3 g PINNING 1 1 = drain d s 2 Top view MAM385 2 = source 3 = gate Note : Drain and source are interchangeable. Fig.1 Simplified outline and symbol, SOT23. Marking code BFT46 = M3p QUICK REFERENCE DATA ±VDS max. Gate-source voltage (open drain) −VGSO max. 25 V Total power dissipation up to Tamb = 40 °C Ptot max. 250 mW > 0,2 mA < 1,5 mA yfs > 0,5 mS Vn < 0,5 µV Drain-source voltage 25 V Drain current VDS = 10 V; VGS = 0 IDSS Transfer admittance (common source) ID = 0,2 mA; VDS = 10 V; f = 1 kHz Equivalent noise voltage VDS = 10 V; ID = 200 µA; B = 0,6 to 100 Hz December 1997 2 Philips Semiconductors Product specification N-channel silicon FET BFT46 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Drain-source voltage ±VDS max. 25 V Drain-gate voltage (open source) VDGO max. 25 V Gate-source voltage (open drain) −VGSO max. 25 V Drain current ID max. 10 mA IG max. 5 mA Ptot max. 250 mW Gate current Total power dissipation up to Tamb = 40 °C(1) −65 to +150 °C Storage temperature range Tstg Junction temperature Tj max. 150 °C Rth j-a = 430 K/W THERMAL RESISTANCE From junction to ambient(1) Note 1. Mounted on a ceramic substrate of 8 mm × 10 mm × 0,7 mm. CHARACTERISTICS Tj = 25 °C unless otherwise specified Gate cut-off current −VGS = 10 V; VDS = 0 −IGSS < 0,2 nA > 0,2 mA < 1,5 mA > 0,1 V < 1,0 V < 1,2 V Drain current VDS = 10 V; VGS = 0 IDSS Gate-source voltage ID = 50 µA; VDS = 10 V −VGS Gate-source cut-off voltage −V(P)GS ID = 0,5 nA; VDS = 10 V y-parameters at f = 1 kHz; VDS = 10 V; VGS = 0; Tamb = 25 °C Transfer admittance yfs > 1,0 mS Output admittance yos < 10 µS VDS = 10 V; ID = 200 µA; Tamb = 25 °C Transfer admittance yfs > 0,5 mS Output admittance yos < 5 µS Cis < 5 pF Crs < 1,5 pF Vn < 0,5 µV Input capacitance at f = 1 MHz; VDS = 10 V; VGS = 0; Tamb = 25 °C Feedback capacitance at f = 1 MHz; VDS = 10 V; VGS = 0; Tamb = 25 °C Equivalent noise voltage VDS = 10 V; ID = 200 µA; Tamb = 25 °C B = 0,6 to 100 Hz December 1997 3 Philips Semiconductors Product specification N-channel silicon FET BFT46 MDA245 300 handbook, halfpage Ptot (mW) 200 100 0 40 0 80 120 200 160 Tamb (°C) Fig.2 Power derating curve. MDA272 1.5 ID handbook, full pagewidth (mA) 1.25 1 0.75 VGS = 0 V max 0.5 − 0.1 V typ 0.25 − 0.2 V − 0.3 V min 0 −1.25 − 0.4 V VGS (V) −1 −0.75 −0.5 −0.25 0 5 Fig.3 Typical values. VDS = 10 V; Tj = 25 °C. December 1997 4 10 15 VDS (V) 20 Philips Semiconductors Product specification N-channel silicon FET BFT46 MDA273 1 MDA274 1.25 −V(P)GS handbook, halfpage handbook, halfpage ID (mA) (V) at ID = 0.5 nA 1 − VGS = 0 V 0.75 0.1 V typ 0.5 0.75 0.2 V 0.3 V 0.5 0.25 0.25 0 0 50 100 Tj (°C) 0 150 Fig.4 Typical values. VDS = 10 V. 1 1.5 IDSS (mA) at VGS = 0 0.5 Correlation between −V(P)GS and IDSS. VDS = 10 V; Tj = 25 °C. Fig.5 MDA269 3 MDA270 5 |yos| handbook, halfpage |yfs| (mS) (mS) 4 2 typ 3 typ 2 1 1 0 0 Fig.6 0.25 0.5 ID (mA) 0 0.75 0 yfs versus ID. VDS = 10 V; f = 1 kHz; Tamb = 25 °C. December 1997 Fig.7 5 0.25 0.5 ID (mA) 0.75 yos versus ID. VDS = 10 V; f = 1 kHz; Tamb = 25 °C. Philips Semiconductors Product specification N-channel silicon FET BFT46 MDA271 103 handbook, halfpage |yos| (µA/V) Cis (pF) 102 4 typ 10 1 0 2 10 20 VDS (V) 0 30 0 yos versus VDS. ID = 0,4 mA; f = 1 kHz; Tamb = 25 °C. Fig.8 MDA266 6 handbook, halfpage −2 −3 VGS (V) −4 Fig.9 Typical values. VDS = 10 V; Tamb = 25 °C. MDA267 1.5 −1 MDA268 10 handbook, halfpage handbook, halfpage IGSS Crs (nA) (pF) 1 1 typ 10−1 0.5 10−2 0 0 −1 −2 −3 VGS (V) 10−3 −4 Fig.10 Typical values. VDS = 10 V, Tamb = 25 °C. December 1997 0 50 100 Tj (°C) 150 Fig.11 IGSS versus Tj. −VGSS = 10V; VDS = 0. 6 Philips Semiconductors Product specification N-channel silicon FET BFT46 MDA264 104 handbook, full pagewidth en (nV/ Hz) 103 102 typ 10 1 10 102 103 104 105 f (Hz) 106 Fig.12 VDS = 10 V; ID = 0,2 mA; Tamb = 25 °C. MDA265 104 handbook, full pagewidth in (fA/ Hz) 103 102 10 1 10 typ 102 103 104 Fig.13 VDS = 10 V; ID = 0,2 mA; Tamb = 25 °C. December 1997 7 105 f (Hz) 106 Philips Semiconductors Product specification N-channel silicon FET BFT46 PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-02-28 SOT23 December 1997 EUROPEAN PROJECTION 8 Philips Semiconductors Product specification N-channel silicon FET BFT46 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Short-form specification The data in this specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. December 1997 9