DISCRETE SEMICONDUCTORS DATA SHEET LLE18100X NPN silicon planar epitaxial microwave power transistor Product specification November 1994 Philips Semiconductors Product specification NPN silicon planar epitaxial microwave power transistor LLE18100X FEATURES DESCRIPTION APPLICATIONS • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR NPN silicon planar epitaxial microwave power transistor in a SOT437A glued cap metal ceramic flange package, with emitter connected to flange. Intended for use in common emitter, class AB power amplifiers in CW conditions for professional applications at 1.85 GHz. • Interdigitated structure provides high emitter efficiency • Gold metallization realizes very good stability of the characteristics and excellent lifetime • Multicell geometry gives good balance of dissipated power and low thermal resistance • Internal input prematching ensures good stability and allows an easier design of wideband circuits. PINNING - SOT437A PIN QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common emitter class AB amplifier. MODE OF OPERATION class AB (CW) f (GHz) VCE (V) 1.85 24 ICQ (A) 0.1 PL1 (W) Gpo (dB) ZI/ZL (Ω) ≥ 9 ≥ 8 see Figs 8 and 9 PIN CONFIGURATION DESCRIPTION 1 collector 2 base 3 emitter connected to flange fpage 1 c handbook, halfpage b 3 MBB012 2 Top view e MBC045 Fig.1 Simplified outline and symbol. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. November 1994 2 Philips Semiconductors Product specification NPN silicon planar epitaxial microwave power transistor LLE18100X LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 45 V VCER collector-emitter voltage RBE = 220 Ω − 30 V VCEO collector-emitter voltage open base − 15 V VEBO emitter-base voltage open collector − 3 V IC collector current − 2 A Ptot total power dissipation − 23 W −65 150 °C − 200 °C − 235 °C Tmb = 75 °C Tstg storage temperature range Tj junction temperature Tsld soldering temperature t ≤ 10 s note 1 Note 1. Up to 0.2 mm from ceramic. MRA545 10 IC (A) 30 Ptot (W) 25 1 20 handbook, halfpage MRA544 handbook, halfpage 15 (1) 10−1 10 5 10−2 1 10 VCE (V) 0 102 Tmb ≤ 75 °C (1) Region of permissible DC operation 50 100 150 250 200 Tmb (oC) Ptot max = 23 W. Fig.3 Fig.2 DC SOAR. November 1994 0 3 Maximum power dissipation derating as a function of mounting base temperature. Philips Semiconductors Product specification NPN silicon planar epitaxial microwave power transistor LLE18100X THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS Rth j-mb thermal resistance from junction to mounting base Rth mb-h thermal resistance from mounting base to heatsink Tj = 100 °C MAX. 4.2 K/W 0.2 K/W CHARACTERISTICS Tmb = 25 °C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector cut-off current VCB = 20 V; IE = 0 − 1 mA ICER collector cut-off current VCE = 30 V; RBE = 220 Ω − 10 mA ICEO collector cut-off current VCE = 20 V; IB = 0 − 10 mA IEBO emitter cut-off current VEB = 1.5 V; IC = 0 − 100 µA hFE DC current gain VCE = 3 V; IC = 1 A 15 100 APPLICATION INFORMATION Microwave performance up to Tmb = 25 °C in a common emitter class AB amplifier (note 1). MODE OF OPERATION class AB (CW) f (GHz) 1.85 ICQ (A) VCE (V) 24 0.1 PL1 (W) ≥ 9; typ. 11 Note 1. The test circuit is split into 2 independant halves each being 30 × 40 mm in size. November 1994 4 Gpo (dB) ≥ 8; typ. 10 Zi/ZL (Ω) see Figs 8 and 9 Philips Semiconductors Product specification NPN silicon planar epitaxial microwave power transistor LLE18100X 30 mm handbook, full pagewidth 3 1 9.1 3 30 mm 3.5 3.4 2 0.7 40 mm 5 1 0.7 3.2 2.3 6.5 11 6 1 6 2 3 0.7 0.7 40 mm 1 input output 11.5 0.635 3.2 0.635 4.9 2 5.5 10 MCD660 Dimensions in mm Substrate : Epsilam 10 Thickness : 0.635 mm Permittivity : εr = 10 Fig.4 Prematching test circuit board. List of components (see bias circuit) COMPONENT DESCRIPTION TR1 transistor, BDT85 (or equivalent) D1 diode, BY239800 (or equivalent) note 1 D2 diode, BY239800 note 2 VALUE R1 resistor 100 Ω R2 resistor 3.3 kΩ R3 resistor 56 Ω P1 potentiometer, 10 turns (sfernice) 4.7 kΩ C1 electrolytic capacitor 10 µF, 40 V C5, C6 feedthrough bypass capacitor 1500 pF L1 5 turns 0.5 mm copper wire with ferrite bead L2 5 turns 0.5 mm copper wire Notes 1. In thermal contact with TR1. 2. In thermal contact with D.U.T. November 1994 5 CATALOGUE NO. Erie, ref. 1250-003 Philips Semiconductors Product specification NPN silicon planar epitaxial microwave power transistor BIAS CIRCUIT handbook, full pagewidth LLE18100X PREMATCHINGTEST CIRCUIT +VCC R1 C6 TR1 C5 R2 L2 L1 P1 R3 D1 D.U.T. C1 D2 0V MBC421 - 1 Fig.5 Class AB bias circuit at 1.85 GHz. MRA543 PL (W) MRA542 −15 handbook, halfpage handbook,15 halfpage dim (dBc) −20 ICQ = 100 mA 10 mA 3 mA ICQ = 3 mA −25 10 −30 30 mA −35 5 −40 100 mA 0 0 0.4 0.8 1.2 −45 1.6 0 2 PIN (W) 6 8 POUT (W) VCE = 24 V f = 1.85 GHz VCE = 24 V f = 1.85 GHz Fig.6 Load power as a function of input power. November 1994 4 Fig.7 6 Intermodulation distortion as a function of average output power. Philips Semiconductors Product specification NPN silicon planar epitaxial microwave power transistor LLE18100X 1 handbook, full pagewidth 0.5 2 0.2 5 1.65 Zi 10 1.75 +j 0 0.2 0.5 1 –j 2 5 10 ∞ 1.85 GHz 10 5 0.2 2 0.5 1 MGA247 VCE = 24 V; Zo = 10 Ω; ICQ = 0.1 A. Fig.8 Input impedance as a function of frequency; typical values. 1 handbook, full pagewidth 0.5 2 0.2 5 ZL +j 0 10 1.65 0.2 1.75 0.5 1 2 5 10 ∞ 1.85 GHz –j 10 5 0.2 2 0.5 1 MGA248 VCE = 24 V; Zo = 10 Ω; ICQ = 0.1 A. Fig.9 Optimum load impedance as a function of frequency; typical values. November 1994 7 Philips Semiconductors Product specification NPN silicon planar epitaxial microwave power transistor LLE18100X PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 2 leads SOT437A D A F 3 U1 B q c C 1 H U2 E w1 M A B p A 2 w2 M C b 0 Q 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D E F H p Q q U1 U2 w1 w2 mm 5.03 4.31 1.66 1.39 0.13 0.07 6.99 6.22 6.99 6.22 1.66 1.39 17.02 16.00 3.43 3.17 2.29 2.03 14.22 19.03 18.77 6.48 6.22 0.51 1.02 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ SOT437A November 1994 EUROPEAN PROJECTION ISSUE DATE 97-05-23 8 Philips Semiconductors Product specification NPN silicon planar epitaxial microwave power transistor LLE18100X DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. November 1994 9