BLF6G27-135; BLF6G27LS-135 WiMAX power LDMOS transistor Rev. 02 — 26 May 2008 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation 1-carrier N-CDMA[1] f VDS PL(AV) PL(p) Gp ηD (MHz) (V) (W) (W) (dB) (%) 2500 to 2700 32 20 200 16 ACPR885k ACPR1980k (dBc) (dBc) 22.5 −52[2] −67[2] [1] Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 to 13). PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz. [2] Measured within 30 kHz bandwidth. 1.2 Features n Typical 1-carrier N-CDMA performance (Single carrier IS-95 with pilot, paging, sync and 6 traffic channels [Walsh codes 8 to 13]. PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz) at a frequency of 2500 MHz and 2700 MHz, a supply voltage of 32 V and an IDq of 1200 mA: u Average output power = 20 W u Power gain = 16 dB u Drain efficiency = 22.5 % u ACPR885k = −52.0 dBc in 30 kHz bandwidth n Easy power control n Integrated ESD protection n Excellent ruggedness n High efficiency n Excellent thermal stability n Designed for broadband operation (2500 MHz to 2700 MHz) n Internally matched for ease of use n Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications n RF power amplifiers for base stations and multicarrier applications in the 2500 MHz to 2700 MHz frequency range BLF6G27-135; BLF6G27LS-135 NXP Semiconductors WiMAX power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BLF6G27-135 (SOT502A) 1 drain 2 gate 3 source 1 1 [1] 3 2 2 3 sym112 BLF6G27LS-135 (SOT502B) 1 drain 2 gate 3 source 1 1 [1] 3 2 2 3 sym112 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description BLF6G27-135 - flanged LDMOST ceramic package; 2 mounting holes; SOT502A 2 leads Version BLF6G27LS-135 - earless flanged LDMOST ceramic package; 2 leads SOT502B 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS Conditions Min Max Unit drain-source voltage - 65 V VGS gate-source voltage −0.5 +13 V ID drain current - 34 A Tstg storage temperature −65 +150 °C Tj junction temperature - 200 °C 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Type Typ Unit Rth(j-case) thermal resistance from junction to case Tcase = 80 °C; PL = 135 W (CW) BLF6G27-135 0.5 K/W BLF6G27LS-135 0.45 K/W BLF6G27-135_BLF6G27LS-135_2 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 02 — 26 May 2008 2 of 13 BLF6G27-135; BLF6G27LS-135 NXP Semiconductors WiMAX power LDMOS transistor 6. Characteristics Table 6. Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 0.5 mA 65 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 216 mA 1.4 2 2.4 V IDSS drain leakage current VGS = 0 V; VDS = 28 V - - 4.2 µA IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V 30.6 34 - A IGSS gate leakage current VGS = +11 V; VDS = 0 V - - 420 nA gfs forward transconductance VDS = 10 V; ID = 6.3 A - 12 - S RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 7.2 A - 0.085 0.135 Ω Crs feedback capacitance VGS =0 V; VDS = 28 V; f = 1 MHz - 3.15 - pF 7. Application information Table 7. Application information Mode of operation: 1-carrier N-CDMA, single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 to 13). PAR = 9.7 dB at 0.01 % probability on the CCDF, channel bandwidth is 1.2288 MHz; f1 = 2500 MHz; f2 = 2600 MHz; f3 = 2700 MHz; RF performance at VDS = 32 V; IDq = 1200 mA; Tcase = 25 °C; unless otherwise specified, in a class-AB production circuit. Symbol Parameter Conditions Min Typ Max Unit Gp power gain PL(AV) = 20 W 14 16 - dB RLin input return loss PL(AV) = 20 W - −10 - dB ηD drain efficiency PL(AV) = 20 W 19.0 22.5 - % ACPR885k adjacent channel power ratio (885 kHz) PL(AV) = 20 W [1] −48 −52 - dBc ACPR1980k adjacent channel power ratio (1980 kHz) PL(AV) = 20 W [1] −65 −67 - dBc PL(M) peak output power [2] 185 200 - W [1] Measured within 30 kHz bandwidth. [2] Measured at 2.7 GHz and 3 dB compression of the CCDF at 0.01 % probability. 7.1 Ruggedness in class-AB operation The BLF6G27-135 and BLF6G27LS-135 are capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; IDq = 1200 mA; PL = PL(1dB); f = 2700 MHz. BLF6G27-135_BLF6G27LS-135_2 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 02 — 26 May 2008 3 of 13 BLF6G27-135; BLF6G27LS-135 NXP Semiconductors WiMAX power LDMOS transistor 7.2 NXP WiMAX signal 7.2.1 WiMAX signal description frame duration = 5 ms; bandwidth = 10 MHz; sequency = 1 frame; frequency band = WCS; sampling rate = 11.2 MHz; n = 28 / 25; G = Tg / Tb = 1 / 8; FFT = 1024; zone type = PUSC; δ = 97.7 %; number of symbols = 46; number of subchannels = 30; PAR = 9.5 dB. Preamble: 1 symbol × 30 subchannels; PL = PL(nom) + 3.86 dB. Table 8. Frame structure Modulation technique Data length Zone 0 Frame contents FCH 2 symbols × 4 subchannels QPSK1/2 3 bit Zone 0 data 2 symbols × 26 subchannels 64QAM3/4 692 bit Zone 0 data 44 symbols × 30 subchannels 64QAM3/4 10000 bit 7.2.2 Graphs 001aah641 2.5 Gp (dB) EVM (%) 2.0 18 1.5 16 1.0 14 0.5 12 0 4 8 12 16 20 24 28 PL(AV) (W) Gp 15 ηD 10 5 0 0 VDS = 32 V; IDq = 1200 mA; f = 2600 MHz. 4 8 12 16 20 24 28 PL(AV) (W) VDS = 32 V; IDq = 1200 mA; f = 2600 MHz. EVM as function of average load power; typical values Fig 2. Power gain and drain efficiency as functions of average load power; typical values BLF6G27-135_BLF6G27LS-135_2 Product data sheet 25 ηD (%) 20 10 0 Fig 1. 001aah642 20 © NXP B.V. 2008. All rights reserved. Rev. 02 — 26 May 2008 4 of 13 BLF6G27-135; BLF6G27LS-135 NXP Semiconductors WiMAX power LDMOS transistor 001aah643 −20 ACPR (dBc) −30 (1) −40 −50 (2) (3) −60 −70 0 4 8 12 16 20 24 28 PL(AV) (W) VDS = 32 V; IDq = 1200 mA. (1) f = 2600 MHz ± 10 MHz (2) f = 2600 MHz ± 20 MHz (3) f = 2600 MHz ± 30 MHz Fig 3. Adjacent channel power ratio as function of average load power; typical values 7.3 Single carrier N-CDMA broadband performance at 9 W average 7.3.1 Graphs 001aah644 19 Gp (dB) 18 17 25 ηD (%) 24 23 001aah645 −45 ACPR (dBc) −50 (1) (2) ACPR885k −55 (2) (1) Gp 16 22 −60 21 −65 ηD 15 14 20 13 2500 2550 2600 19 2700 2650 ACPR1500k (2) (1) ACPR1980k −70 −75 2500 2550 2600 f (MHz) 2650 2700 f (MHz) VDS = 32 V; IDq = 1200 mA; Single Carrier N-CDMA; PAR = 9.7 dB at 0.01 % probability; IBW = 30 kHz. VDS = 32 V; IDq = 1200 mA; Single Carrier N-CDMA; PAR = 9.7 dB at 0.01 % probability; IBW = 30 kHz. (1) Low frequency component (2) High frequency component Fig 4. Power gain and drain efficiency as functions of frequency; typical values Fig 5. Adjacent channel power ratio as function of frequency; typical values BLF6G27-135_BLF6G27LS-135_2 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 02 — 26 May 2008 5 of 13 BLF6G27-135; BLF6G27LS-135 NXP Semiconductors WiMAX power LDMOS transistor 001aah646 19 Gp (dB) 18 42 ηD (%) 35 001aah647 −35 ACPR (dBc) −45 28 17 −55 Gp 16 21 15 14 14 7 ACPR885k (1) (2) −65 ηD 0 102 13 1 10 ACPR1500k −75 (2) (1) (1) (2) ACPR1980k −85 1 102 10 PL (W) PL (W) VDS = 32 V; IDq = 1200 mA; f = 2600 MHz; Single Carrier N-CDMA; PAR = 9.7 dB at 0.01 % probability; Channel Bandwidth = 1.23 MHz; IBW = 30 kHz. VDS = 32 V; IDq = 1200 mA; f = 2600 MHz; Single Carrier N-CDMA; PAR = 9.7 dB at 0.01 % probability; Channel Bandwidth = 1.23 MHz; IBW = 30 kHz. (1) Low frequency component (2) High frequency component Fig 6. Power gain and drain efficiency as functions of load power; typical values Fig 7. 001aah648 17 Adjacent channel power ratio as function of load power; typical values 001aah649 3 Gp (dB) Pi (W) 16 (1) (2) (3) 2 (3) (2) (1) 15 1 14 1 0 102 10 1 PL (W) PL (W) VDS = 32 V; IDq = 1200 mA; Single Carrier N-CDMA; PAR = 9.7 dB at 0.01 % probability; Channel Bandwidth = 1.23 MHz; IBW = 30 kHz. VDS = 32 V; IDq = 1200 mA; Single Carrier N-CDMA; PAR = 9.7 dB at 0.01 % probability; Channel Bandwidth = 1.23 MHz; IBW = 30 kHz. (1) f = 2500 MHz (1) f = 2500 MHz (2) f = 2600 MHz (2) f = 2600 MHz (3) f = 2700 MHz (3) f = 2700 MHz Fig 8. Power gain as function of load power; typical values Fig 9. Input power as function of load power; typical values BLF6G27-135_BLF6G27LS-135_2 Product data sheet 102 10 © NXP B.V. 2008. All rights reserved. Rev. 02 — 26 May 2008 6 of 13 BLF6G27-135; BLF6G27LS-135 NXP Semiconductors WiMAX power LDMOS transistor 8. Test information R2 VGG C4 R1 C5 C6 C7 L1 VDD C9 + C3 C8 − C2 C10 C1 BLF6G27-135 input-rev 1A 30RF35 NXP BLF6G27-135 output-rev 1A 30RF35 NXP 001aah650 Striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with εr = 3.5 and thickness = 0.76 mm. See Table 9 for list of components. Fig 10. Component layout for 2500 MHz to 2700 MHz test circuit Table 9. List of components For test circuit, see Figure 10. Component Description Value Remarks C1, C3, C4, C10 multilayer ceramic chip capacitor 8.2 pF ATC 100B or equivalent C2 multilayer ceramic chip capacitor 4.7 µF; 50 V TDK C4532X7R1H475M or equivalent C5 multilayer ceramic chip capacitor 10 µF; 50 V TDK C5750X7R1H106M or equivalent C9 multilayer ceramic chip capacitor 1.5 µF; 50 V TDK C3225X7R1H155M or equivalent C6, C7 multilayer ceramic chip capacitor 100 nF Vishay VJ1206Y104KXB or equivalent C8 electrolytic capacitor 470 µF; 63 V ATC 100B or equivalent L1 ferrite SMD bead - Ferroxcube BDS 3/3/4.6-4S2 or equivalent R1 SMD resistor 5.1 Ω SMD 1206 R2 SMD resistor 9.1 Ω SMD 1206 BLF6G27-135_BLF6G27LS-135_2 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 02 — 26 May 2008 7 of 13 NXP Semiconductors BLF6G27-135; BLF6G27LS-135 WiMAX power LDMOS transistor Table 10. Measured test circuit impedances f Zi Zo (GHz) (Ω) (Ω) 2.5 1.60 + j1.07 1.44 + j1.86 2.6 1.38 + j2.08 1.17 + j2.80 2.7 1.17 + j2.77 0.97 + j3.41 BLF6G27-135_BLF6G27LS-135_2 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 02 — 26 May 2008 8 of 13 BLF6G27-135; BLF6G27LS-135 NXP Semiconductors WiMAX power LDMOS transistor 9. Package outline Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A D A F 3 D1 U1 B q c C 1 H L E1 p U2 E w1 M A M B M A 2 w2 M C M b 0 5 Q 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 4.72 3.43 12.83 12.57 0.15 0.08 inches 0.186 0.135 0.505 0.006 0.495 0.003 OUTLINE VERSION E E1 F H L p Q q U1 U2 w1 w2 20.02 19.96 19.61 19.66 9.50 9.30 9.53 9.25 1.14 0.89 19.94 18.92 5.33 4.32 3.38 3.12 1.70 1.45 27.94 34.16 33.91 9.91 9.65 0.25 0.51 0.788 0.786 0.772 0.774 0.374 0.375 0.366 0.364 0.067 1.100 0.057 1.345 1.335 0.390 0.380 0.01 0.02 D D1 0.045 0.785 0.035 0.745 0.210 0.133 0.170 0.123 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 99-12-28 03-01-10 SOT502A Fig 11. Package outline SOT502A BLF6G27-135_BLF6G27LS-135_2 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 02 — 26 May 2008 9 of 13 BLF6G27-135; BLF6G27LS-135 NXP Semiconductors WiMAX power LDMOS transistor Earless flanged LDMOST ceramic package; 2 leads SOT502B D A F 3 D D1 c U1 1 L H E1 U2 E 2 w2 M D M b 0 5 Q 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 4.72 3.43 12.83 12.57 0.15 0.08 inches 0.186 0.135 0.505 0.006 0.495 0.003 OUTLINE VERSION E E1 F H L Q U1 U2 w2 20.02 19.96 19.61 19.66 9.50 9.30 9.53 9.25 1.14 0.89 19.94 18.92 5.33 4.32 1.70 1.45 20.70 20.45 9.91 9.65 0.25 0.788 0.786 0.772 0.774 0.374 0.375 0.366 0.364 0.045 0.785 0.035 0.745 0.210 0.170 0.067 0.815 0.057 0.805 D D1 REFERENCES IEC JEDEC JEITA 0.390 0.010 0.380 EUROPEAN PROJECTION ISSUE DATE 03-01-10 07-05-09 SOT502B Fig 12. Package outline SOT502B BLF6G27-135_BLF6G27LS-135_2 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 02 — 26 May 2008 10 of 13 BLF6G27-135; BLF6G27LS-135 NXP Semiconductors WiMAX power LDMOS transistor 10. Abbreviations Table 11. Abbreviations Acronym Description CCDF Complementary Cumulative Distribution Function CDMA Code Division Multiple Access CW Continuous Wave EVM Error Vector Magnitude FCH Frame Control Header FFT Fast Fourier Transform IBW Instantaneous BandWidth IS-95 CDMA Interim Standard 95 LDMOS Laterally Diffused Metal-Oxide Semiconductor LDMOST Laterally Diffused Metal-Oxide Semiconductor Transistor N-CDMA Narrowband Code Division Multiple Access PAR Peak-to-Average power Ratio PUSC Partial Usage of SubChannels RF Radio Frequency SMD Surface Mounted Device VSWR Voltage Standing-Wave Ratio WCS Wireless Communications Service WiMAX Worldwide Interoperability for Microwave Access 11. Revision history Table 12. Revision history Document ID Release date Data sheet status Change notice Supersedes BLF6G27-135_BLF6G27LS-135_2 20080526 Product data sheet BLF6G27-135_BLF6G27LS-135_1 20080221 Preliminary data sheet - BLF6G27-135_BLF6G27LS-135_2 Product data sheet - BLF6G27-135_ BLF6G27LS-135_1 - © NXP B.V. 2008. All rights reserved. Rev. 02 — 26 May 2008 11 of 13 NXP Semiconductors BLF6G27-135; BLF6G27LS-135 WiMAX power LDMOS transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 12.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BLF6G27-135_BLF6G27LS-135_2 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 02 — 26 May 2008 12 of 13 NXP Semiconductors BLF6G27-135; BLF6G27LS-135 WiMAX power LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.2.1 7.2.2 7.3 7.3.1 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation. . . . . . . . . . 3 NXP WiMAX signal . . . . . . . . . . . . . . . . . . . . . . 4 WiMAX signal description . . . . . . . . . . . . . . . . . 4 Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Single carrier N-CDMA broadband performance at 9 W average . . . . . . . . . . . . . . 5 Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information. . . . . . . . . . . . . . . . . . . . . 12 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 26 May 2008 Document identifier: BLF6G27-135_BLF6G27LS-135_2