Document No.001-96051 Rev. *A ECN #: 4803254 Cypress Semiconductor Product Qualification Report QTP# 141603 VERSION *A June, 2015 128Kb and 256Kb F-RAM Memory Product Qualification 130nm Technology, TI Fab FM24V02A-G 256-Kbit (32K × 8) Serial (I2C) F-RAM FM24V01A-G 128-Kbit (16K × 8) Serial (I2C) F-RAM FM25V02A-G 256-Kbit (32K × 8) Serial (SPI) F-RAM FM25V01A-G 128-Kbit (16K × 8) Serial (SPI) F-RAM FM25V02A-DG 256-Kbit (32K × 8) Serial (SPI) F-RAM FM25V02A-DGQ 256-Kbit (32K × 8) Serial (SPI) F-RAM FOR ANY QUESTIONS ON THIS REPORT, PLEASE CONTACT [email protected] or via a CYLINK CRM CASE Prepared By: Becky Thomas Reliability Engineer Reviewed By: Zhaomin Ji Reliability Engineer Approved By: Don Darling Reliability Director Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 1 of 13 Document No.001-96051 Rev. *A ECN #: 4803254 PACKAGE/PRODUCT QUALIFICATION HISTORY QTP Number Description of Qualification Purpose Date 02-60-5112 / 124901 TI Process Qualification 130nm F-RAM Process Aug 2008 / Dec 2012 133705 New Product Qualification, 1Mb and 2Mb F-RAM Memory Aug 2014 141603 New Product Qualification, 128Kb and 256Kb F-RAM Memory Jan 2015 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 2 of 13 Document No.001-96051 Rev. *A ECN #: 4803254 PRODUCT DESCRIPTION (for qualification) Qualification Purpose: New Product Qualification, 128Kb and 256Kb F-RAM Memory Marketing Part #: FM24V02A-G, FM24V01A-G, FM25V02A-G, FM25V01A-G, FM25V02A-DG, FM25V02A-DGQ Device Description: 128Kb and 256Kb F-RAM Serial and Parallel Memory Cypress Division: Cypress Semiconductor Corporation – Memory Products Division (MPD) TECHNOLOGY/FAB PROCESS DESCRIPTION Number of Metal Layers: Proprietary* Metal Composition: Proprietary* Proprietary* Passivation Type and Thickness: Generic Process Technology/Design Rule (-drawn): CMOS / 130nm Gate Oxide Material/Thickness (MOS): Proprietary* Name/Location of Die Fab (prime) Facility: Texas Instruments / Dallas Die Fab Line ID/Wafer Process ID: DMOS 5 / E035.1 *Texas Instruments’ proprietary information is available with signed NDA. PACKAGE AVAILABILITY PACKAGE ASSEMBLY FACILITY SITE 8-pin SOIC, 150 mils UTAC, Thailand (UT) 8-pin SOIC, 150 mils CML, Philippines (RA) 8-pin TDFN UTAC, Thailand (UT) Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 3 of 13 Document No.001-96051 Rev. *A ECN #: 4803254 MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION Package Designation: SW815 Package Outline, Type, or Name: 8LD SOIC (150mils) Mold Compound Name/Manufacturer: Mold Compound Flammability Rating: G3000DA / Kyocera V-0 / UL94 Mold Compound Alpha Emission Rate: <0.1 Oxygen Rating Index: >28% 50% Typical Lead Frame Designation: FMP Lead Frame Material: Cu Substrate Material: N/A Lead Finish, Composition / Thickness: NiPdAu Die Backside Preparation Method/Metallization: Backgrind Die Separation Method: Wafer Saw Die Attach Supplier: Henkel Die Attach Material: QMI 509 Bond Diagram Designation 001-87480 Wire Bond Method: Thermosonic Wire Material/Size: Au / 0.8 mil Thermal Resistance Theta JA C/W: 146C/W Package Cross Section Yes/No: No Assembly Process Flow: 001-91441/M Name/Location of Assembly (prime) facility: CML-RA MSL LEVEL 3 REFLOW PROFILE 260C ELECTRICAL TEST / FINISH DESCRIPTION Test Location: CMI, USA; UTAC, Thailand; CML, Philippines / UTAC, Thailand; CML, Philippines Note: Please contact a Cypress Representative for other package availability. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 4 of 13 Document No.001-96051 Rev. *A ECN #: 4803254 RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENTS Stress/Test Test Condition (Temp/Bias) Result P/F P Data Retention (Plastic) 150 C, non-biased, 1,000 Hours JESD22-A117 and JESD22-A103 Data Retention (Plastic) 125 C, non-biased, 1,000 Hours JESD22-A117 and JESD22-A103 P High Temperature Operating Life Early Failure Rate Dynamic Operating Condition, Vcc = 3.60V, 125 C, 96 Hours JESD22-A108 P Endurance Test MIL-STD-883, Method 883-1033, 1.1E6 cycles (full 256Kb array) + 7.5E9 (single byte), Vcc = 3.60V, followed by 168hour Data Retention at 150C. Dynamic Operating Condition, Vcc = 3.60V, 125 C, 1,000 Hours JESD22-A108 JESD22-A102: 121 C, 100%RH, 15 PSIG, 168 Hours and 288 Hours Precondition: JESD22 Moisture Sensitivity Level 3 (192 Hrs, 30 C, 60% RH) MIL-STD-883, Method 1010, Condition C, -65 C to 150 C, 500 and 1,000 Cycles Precondition: JESD22 Moisture Sensitivity Level 3 (192 Hrs, 30 C, 60% RH) J-STD-020 Precondition: JESD22 Moisture Sensitivity Level 3 (192 Hrs, 30 C, 60% RH) (1,100V / 2,200V / 3,300V) JEDEC EIA/JESD22-A114-B P High Temperature Operating Life Latent Failure Rate Pressure Cooker Test Temperature Cycle Acoustic Microscopy Electrostatic Discharge Human Body Model (ESDHBM): FM25V02A-G, FM24V02A-G, FM25V01A-G, FM24V01A-G Electrostatic Discharge Charge Device Model (ESDCDM): FM25V02A-G, FM24V02A-G, FM25V02ADGQ, FM25V01A-G, FM24V01A-G Static Latch up: FM25V02A-G, FM24V02A-G, FM25V01A-G, FM24V01A-G P P P P P (500V / 750V / 1,000V / 1,250V / 1,500V / 1,750V / 2,000V) JESD22-C101 P 85C, ±140mA, 5.4V JESD78 P Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 5 of 13 Document No.001-96051 Rev. *A ECN #: 4803254 RELIABILITY FAILURE RATE SUMMARY Stress/Test High Temperature Operating Life Early Failure Rate High Temperature Operating Life1,2 Long Term Failure Rate Device Tested/ Device Hours # Fails Activation Energy Thermal AF3 Failure Rate 1784 Devices* 0 N/A N/A 0 PPM 0 0.7 55 17 FITs 1599 Devices 547,000 DHRs** 231,000 DHRs* 188,000 DHRs *Leverage EFR/LFR data from New Product Qualification, 1Mb and 2Mb F-RAM Memory QTP#133705 (SPEC#001-93908) *Leverage HTOL data from TI 130nm F-RAM Process QTP#124901 (SPEC#001-85093) 1 2 3 Assuming an ambient temperature of 55C and a junction temperature rise of 15C. Chi-squared 60% estimations used to calculate the failure rate. Thermal Acceleration Factor is calculated from the Arrhenius equation E 1 1 AF = exp A - k T 2 T1 where: EA =The Activation Energy of the defect mechanism. K = Boltzmann's constant = 8.62x10-5 eV/Kelvin. T1 is the junction temperature of the device under stress and T2 is the junction temperature of the device at use conditions. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 6 of 13 Document No.001-96051 Rev. *A ECN #: 4803254 Reliability Test Data QTP #: 141603 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: DATA RETENTION (125C, 1,000 hours) FM25V02A-G 4438076 611435736 CML-RA 500 80 0 FM25V02A-G 4438076 611435736 CML-RA 1000 80 0 STRESS: DATA RETENTION (150C, 1,000 hours) CY15B102Q-SXE 4351641 611410018 UTAC - UT 500 77 0 CY15B102Q-SXE 4351641 611410018 UTAC - UT 1000 77 0 15 0 STRESS: ACOUSTIC Microscopy, Before and After MSL3 Preconditioning FM25V02A-G 4438076 611435736 CML-RA COMP STRESS: HIGH TEMPERATURE OPERATING LIFE- EARLY FAILURE RATE (125C, 96 hours, 3.60V) FM25V02A-G 4438076 611435736 CML-RA 96 1599 0 STRESS: ENDURANCE (1.1E6 cycles (full 256Kb array) + 7.5E9 (single byte), 3.60V, followed by 168hour Data Retention at 150C) FM25V02A-G 4438076 611435736 CML-RA 168 77 0 STRESS: HIGH TEMPERATURE OPERATING LIFE- LATENT FAILURE RATE (125C, 1,000 hours, 3.60V) FM25V02A-G 4438076 611435736 CML-RA 168 188 0 FM25V02A-G 4438076 611435736 CML-RA 1000 188 0 STRESS: ESD- CHARGED DEVICE MODEL (500V) FM25V02A-G 4438076 611435736 CML-RA COMP 9 0 FM24V02A-G 4438076 611435737 CML-RA COMP 9 0 FM25V02A-DGQ 4438076 611435722 UTAC - UT COMP 9 0 FM25V01A-G 4438076 611442260 CML-RA COMP 9 0 FM24V01A-G 4438076 611442261 CML-RA COMP 9 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 7 of 13 Document No.001-96051 Rev. *A ECN #: 4803254 Reliability Test Data QTP #: 141603 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: ESD- CHARGED DEVICE MODEL (750V) FM25V02A-G 4438076 611435736 CML-RA COMP 3 0 FM24V02A-G 4438076 611435737 CML-RA COMP 3 0 FM25V02A-DGQ 4438076 611435722 UTAC - UT COMP 3 0 FM25V01A-G 4438076 611442260 CML-RA COMP 3 0 FM24V01A-G 4438076 611442261 CML-RA COMP 3 0 STRESS: ESD- CHARGED DEVICE MODEL (1,000V) FM25V02A-G 4438076 611435736 CML-RA COMP 3 0 FM24V02A-G 4438076 611435737 CML-RA COMP 3 0 FM25V02A-DGQ 4438076 611435722 UTAC - UT COMP 3 0 FM25V01A-G 4438076 611442260 CML-RA COMP 3 0 FM24V01A-G 4438076 611442261 CML-RA COMP 3 0 STRESS: ESD- CHARGED DEVICE MODEL (1,250V) FM25V02A-G 4438076 611435736 CML-RA COMP 3 0 FM24V02A-G 4438076 611435737 CML-RA COMP 3 0 FM25V02A-DGQ 4438076 611435722 UTAC - UT COMP 3 0 FM25V01A-G 4438076 611442260 CML-RA COMP 3 0 FM24V01A-G 4438076 611442261 CML-RA COMP 3 0 STRESS: ESD- CHARGED DEVICE MODEL (1,500V) FM25V02A-G 4438076 611435736 CML-RA COMP 3 0 FM24V02A-G 4438076 611435737 CML-RA COMP 3 0 FM25V02A-DGQ 4438076 611435722 UTAC - UT COMP 3 0 FM25V01A-G 4438076 611442260 CML-RA COMP 3 0 FM24V01A-G 4438076 611442261 CML-RA COMP 3 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 8 of 13 Document No.001-96051 Rev. *A ECN #: 4803254 Reliability Test Data QTP #: 141603 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: ESD- CHARGED DEVICE MODEL (1,750V) FM25V02A-G 4438076 611435736 CML-RA COMP 3 0 FM24V02A-G 4438076 611435737 CML-RA COMP 3 0 FM25V02A-DGQ 4438076 611435722 UTAC - UT COMP 3 0 FM25V01A-G 4438076 611442260 CML-RA COMP 3 0 FM24V01A-G 4438076 611442261 CML-RA COMP 3 0 STRESS: ESD- CHARGED DEVICE MODEL (2,000V) FM25V02A-G 4438076 611435736 CML-RA COMP 3 0 FM24V02A-G 4438076 611435737 CML-RA COMP 3 0 FM25V02A-DGQ 4438076 611435722 UTAC - UT COMP 3 0 FM25V01A-G 4438076 611442260 CML-RA COMP 3 0 FM24V01A-G 4438076 611442261 CML-RA COMP 3 0 STRESS: ESD-HUMAN BODY CIRCUIT (1,100V) FM25V02A-G 4438076 611435736 CML-RA COMP 3 0 FM24V02A-G 4438076 611435737 CML-RA COMP 3 0 FM25V01A-G 4438076 611442260 CML-RA COMP 3 0 FM24V01A-G 4438076 611442261 CML-RA COMP 3 0 STRESS: ESD-HUMAN BODY CIRCUIT (2,200V) FM25V02A-G 4438076 611435736 CML-RA COMP 8 0 FM24V02A-G 4438076 611435737 CML-RA COMP 8 0 FM25V01A-G 4438076 611442260 CML-RA COMP 8 0 FM24V01A-G 4438076 611442261 CML-RA COMP 8 0 STRESS: ESD-HUMAN BODY CIRCUIT (3,300V) FM25V02A-G 4438076 611435736 CML-RA COMP 3 0 FM24V02A-G 4438076 611435737 CML-RA COMP 3 0 FM25V01A-G 4438076 611442260 CML-RA COMP 3 0 FM24V01A-G 4438076 611442261 CML-RA COMP 3 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 9 of 13 Document No.001-96051 Rev. *A ECN #: 4803254 Reliability Test Data QTP #: 141603 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: PRESSURE COOKER TEST (121C, 100%RH, with MSL3 Preconditioning) FM25V02A-G 4438076 611435736 CML-RA 168 79 0 FM25V02A-G 4438076 611435736 CML-RA 288 78 0 STRESS: STATIC LATCH-UP TESTING (85C, ±140mA, 5.4V) FM25V02A-G 4438076 611435736 CML-RA COMP 6 0 FM24V02A-G 4438076 611435737 CML-RA COMP 6 0 FM25V01A-G 4438076 611442260 CML-RA COMP 6 0 FM24V01A-G 4438076 611442261 CML-RA COMP 6 0 STRESS: TEMPERATURE CYCLE, CONDITION C (-65C TO 150C), with MSL3 Preconditioning FM25V02A-G 4438076 611435736 CML-RA 500 80 0 FM25V02A-G 4438076 611435736 CML-RA 1000 80 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 10 of 13 Document No.001-96051 Rev. *A ECN #: 4803254 Reliability Test Data QTP #: 133705 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej 15 0 Failure Mechanism STRESS: ACOUSTIC Microscopy, Before and After MSL3 Preconditioning FM25V20A-G 4346426 611343226 UTAC - UT COMP STRESS: HIGH TEMPERATURE OPERATING LIFE- EARLY FAILURE RATE (125C, 96 hours, 3.60V) FM25V20A-G 4346426 611343226 UTAC - UT 96 1784 0 STRESS: HIGH TEMPERATURE OPERATING LIFE- LATENT FAILURE RATE (125C, 1,000 hours, 3.60V) FM25V20-G 060801410 060801410 UTAC - UT 1000 77 0 FM25V20-G 057847882 057847882 UTAC - UT 1000 77 0 FM25V20-G 15199101 15199101 UTAC - UT 1000 77 0 STRESS: ESD- CHARGED DEVICE MODEL(500V) FM25V20A-G 4346426 611343226 UTAC - UT COMP 12 0 FM28V202-TG 4346426 611343224 UTAC - UT COMP 12 0 STRESS: ESD- CHARGED DEVICE MODEL(750V) FM25V20A-G 4346426 611343226 UTAC - UT COMP 3 0 FM28V202-TG 4346426 611343224 UTAC - UT COMP 3 0 STRESS: ESD- CHARGED DEVICE MODEL(1,000V) FM25V20A-G 4346426 611343226 UTAC - UT COMP 3 0 FM28V202-TG 4346426 611343224 UTAC - UT COMP 3 0 STRESS: ESD- CHARGED DEVICE MODEL(1,250V) FM25V20A-G 4346426 611343226 UTAC - UT COMP 3 0 FM28V202-TG 4346426 611343224 UTAC - UT COMP 3 0 STRESS: ESD-HUMAN BODY CIRCUIT (1,100V) FM25V20A-G 4346426 611343226 UTAC - UT COMP 3 0 FM28V202-TG 4346426 611343224 UTAC - UT COMP 3 0 STRESS: ESD-HUMAN BODY CIRCUIT (1,500V) FM25V20A-G 4346426 611343226 UTAC - UT COMP 5 0 FM28V202-TG 4346426 611343224 UTAC - UT COMP 5 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 11 of 13 Document No.001-96051 Rev. *A ECN #: 4803254 Reliability Test Data QTP #: 133705 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: ESD-HUMAN BODY CIRCUIT (2,200V) FM25V20A-G 4346426 611343226 UTAC - UT COMP 8 0 FM28V202-TG 4346426 611343224 UTAC - UT COMP 8 0 UTAC - UT COMP 3 0 80 0 STRESS: ESD-HUMAN BODY CIRCUIT (3,300V) FM25V20A-G 4346426 611343226 STRESS: PRESSURE COOKER TEST (121C, 100%RH, with MSL3 Preconditioning FM25V20A-G 4346426 611343226 UTAC - UT 168 STRESS: STATIC LATCH-UP TESTING (85C, ±140mA, 5.4V) FM25V20A-G 4346426 611343226 UTAC - UT COMP 6 0 FM28V202-TG 4346426 611343224 UTAC - UT COMP 6 0 STRESS: TEMPERATURE CYCLE, CONDITION C (-65C TO 150C), with MSL3 Preconditioning FM25V20A-G 4346426 611343226 UTAC - UT 500 80 0 FM25V20A-G 4346426 611343226 UTAC - UT 1000 80 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 12 of 13 Document No.001-96051 Rev. *A ECN #: 4803254 Document History Page Document Title: Document Number: Rev. ECN No. ** 4623063 *A 4803254 QTP #141603:128KB AND 256KB F-RAM MEMORY PRODUCT QUALIFICATION 001-96051 Orig. of Change BECK BECK Description of Change Initial Release Indicated “Proprietary” Items on the “TECHNOLOGY/FAB PROCESS DESCRIPTION” Table, Page 4. Distribution: WEB Posting: None Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 13 of 13