Cypress Semiconductor Product Qualification Report QTP# 044505 VERSION 1.0 July 2005 FX2LP/FX1-128 Device Family C8Q-3R Technology, Fab 4 CY7C68013A CY7C68014A EZ-USB FX2LP™ USB Microcontroller CY7C64713 EZ-USB FX1™ USB Microcontroller Full –Speed USB Peripheral Controller CY7C68300B CY7C68301B CY7C68320 CY7C68321 EZ-USB AT2LP™ USB 2.0 to ATA/ATAPI Bridge CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Sabbas Daniel Quality Engineering Director (408) 943-2685 Fredrick Whitwer Principal Reliability Engineer (408) 943-2722 Cypress Semiconductor FX2LP/FX1-128 Device Family, C8Q-3R Technology, Fab4 Device: CY7C68013/4/5/6A, CY7C64713, CY7C68300/1B, CY7C68320/1 QTP# 044505, V, 1.0 Page 2 of 11 July 2005 PRODUCT QUALIFICATION HISTORY Qual Report Description of Qualification Purpose Date Comp 033805 FX2LP/FX1/AT2LP New Device Family on New C8Q-3R Technology, Fab4 Jan 05 044505 7C6810**B Device Family (FX2LP-128) on C8Q-3R Technology, Fab4 Jun 05 Cypress Semiconductor FX2LP/FX1-128 Device Family, C8Q-3R Technology, Fab4 Device: CY7C68013/4/5/6A, CY7C64713, CY7C68300/1B, CY7C68320/1 QTP# 044505, V, 1.0 Page 3 of 11 July 2005 PRODUCT DESCRIPTION (for qualification) Qualification Purpose: New Device Family FX2LP/FX1-128 in C8Q-3R Technology from Fab4 Marketing Part #: CY68013/4/5/6A, CY7C64713, CY7C68300/1B, CY7C68320/1 Device Description: 3.3V, Commercial, available in 100/128-pin TQFP, 56-pin SSOP and QFN Cypress Division: Cypress Semiconductor Corporation – Consumer & Computation Division (CCD) Overall Die (or Mask) REV Level (pre-requisite for qualification): Rev. B What ID markings on Die: 7C68100A TECHNOLOGY/FAB PROCESS DESCRIPTION Number of Metal Layers: 4 Metal Composition: Metal 1: 300A Ti/3,200A Al 0.5% Cu /300A TiW Metal 2: 150A Ti/4,000A Al 0.5% Cu/300A TiW Metal 3: 150A Ti/4,000A Al 0.5% Cu/300A TiW Metal 4: 150A Ti/4,000A Al 0.5% Cu/300A TiW Passivation Type and Materials: 1,000A TeOs / 9,000A Si3N4 Free Phosphorus contents in top glass layer (%): 0% Number of Transistors in Device: 700K Number of Gates in Device 120K Generic Process Technology/Design Rule (µ-drawn): CMOS, 0.13 µm Gate Oxide Material/Thickness (MOS): SiO2 DGOX 32/55A Name/Location of Die Fab (prime) Facility: CMI/Fab4 Die Fab Line ID/Wafer Process ID: Fab4, C8Q-3R PACKAGE AVAILABILITY PACKAGE ASSEMBLY SITE FACILITY 100-Pin TQFP Cypress Phil (CML-R) 128-Pin TQFP ASE-Taiwan (TAIWN-G) 56-Pin SSOP Cypress Phil. (CML-R) 56-Pin QFN Seoul-Korea (SEOL-L) Note: Package Qualification details upon request. Cypress Semiconductor FX2LP/FX1-128 Device Family, C8Q-3R Technology, Fab4 Device: CY7C68013/4/5/6A, CY7C64713, CY7C68300/1B, CY7C68320/1 MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION Package Designation: Package Outline, Type, or Name: Mold Compound Name/Manufacturer: Mold Compound Flammability Rating: AZ128 128-Pin Thin Quad Flat Pack (TQFP) Hitachi CEL9200CYR V-O per UL94 Oxygen Rating Index: N/A Lead Frame Designation: N/A Lead Frame Material: Copper Lead Finish, Composition / Thickness: Pure Sn Die Backside Preparation Method/Metallization: Grinding Die Separation Method: Sawing Die Attach Supplier: Dexter Die Attach Material: QMI 505 Die Attach Method: Dispensing Bond Diagram Designation: 10-06610 Wire Bond Method: Thermosonic Wire Material/Size: Au, 1.0mil Thermal Resistance Theta JA °C/W: 42.27°C/W Package Cross Section Yes/No: No Assembly Process Flow: 49-41035 Name/Location of Assembly (prime) facility: Taiwan-G ELECTRICAL TEST / FINISH DESCRIPTION Test Location: CML-R Fault Coverage: 99.5% Note: Please contact a Cypress Representative for other packages availability. QTP# 044505, V, 1.0 Page 4 of 11 July 2005 Cypress Semiconductor FX2LP/FX1-128 Device Family, C8Q-3R Technology, Fab4 Device: CY7C68013/4/5/6A, CY7C64713, CY7C68300/1B, CY7C68320/1 QTP# 044505, V, 1.0 Page 5 of 11 July 2005 RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENT Stress/Test Test Condition (Temp/Bias) Result P/F High Temperature Operating Life Dynamic Operating Condition, Vcc Max = 2.35V, 125°C Early Failure Rate Dynamic Operating Condition, Vcc Max = 3.8V, 125°C High Temperature Operating Life Dynamic Operating Condition, Vcc Max = 2.35V, 125°C Latent Failure Rate Dynamic Operating Condition, Vcc Max = 3.8V, 125°C Long Life Verification Dynamic Operating Condition, Vcc Max = 3.8V, 125°C P Low Temperature Operating Life -30C, 4.3V P High Temperature Steady State life 150°C, 3.63V, Vcc Max P High Accelerated Saturation Test (HAST) 130°C, 1.8V/3.63V, 85%RH Precondition: JESD22 Moisture Sensitivity Level 3 P P P 192 Hrs, 30°C/60%RH+3IR-Reflow, 260°C+0, -5°C Temperature Cycle MIL-STD-883C, Method 1010, Condition C, -65°C to 150°C Precondition: JESD22 Moisture Sensitivity Level 3 P 192 Hrs, 30°C/60%RH+3IR-Reflow, 260°C+0, -5°C Pressure Cooker 121°C, 100%RH Precondition: JESD22 Moisture Sensitivity Level 3 P 192 Hrs, 30°C/60%RH+3IR-Reflow, 260°C+0, -5°C Electrostatic Discharge Human Body Model (ESD-HBM) 2,200V MIL-STD-883, Method 3015.7 P Electrostatic Discharge Human Body Model (ESD-HBM) 2,200V JESD22, Method A114-B P Electrostatic Discharge Charge Device Model (ESD-CDM) 500V Cypress Spec. 25-00020 P Age Bond Strength 200C, 4hrs MIL-STD-883, Method 883-2011 P Ball Shear Cypress Spec 24-00018 P Acoustic Microscopy Spec. 25-00104 P Latch up Sensitivity 125°C, ± 100mA/300 mA P In accordance with JEDEC 17. Cypress Spec. 01-00081 Cypress Semiconductor FX2LP/FX1-128 Device Family, C8Q-3R Technology, Fab4 Device: CY7C68013/4/5/6A, CY7C64713, CY7C68300/1B, CY7C68320/1 QTP# 044505, V, 1.0 Page 6 of 11 July 2005 RELIABILITY FAILURE RATE SUMMARY Device Tested/ Device Hours # Fails Activation Energy Thermal3 A.F Failure Rate High Temperature Operating Life Early Failure Rate1 2,477 Devices 0 N/A N/A 0 PPM High Temperature Operating Life1,2 Long Term Failure Rate 806,008 DHRs 0 0 .7 55 21 FIT Stress/Test 1 2 3 Assuming an ambient temperature of 55°C and a junction temperature rise of 15°C. Chi-squared 60% estimations used to calculate the failure rate. Thermal Acceleration Factor is calculated from the Arrhenius equation E 1 1 AF = exp A - k T 2 T1 where: EA =The Activation Energy of the defect mechanism. k = Boltzmann's constant = 8.62x10-5 eV/Kelvin. T1 is the junction temperature of the device under stress and T2 is the junction temperature of the device at use conditions. Cypress Semiconductor FX2LP/FX1-128 Device Family, C8Q-3R Technology, Fab4 Device: CY7C68013/4/5/6A, CY7C64713, CY7C68300/1B, CY7C68320/1 QTP# 044505, V, 1.0 Page 7 of 11 July 2005 Reliability Test Data QTP #: Device Fab Lot # 033805 Assy Lot # Assy Loc Duration Samp Rej 610434406 TAIWN-G COMP 17 0 H20592 TAIWN-G COMP 16 0 610434407/8 TAIWN-G COMP 17 0 H20549 TAIWN-G COMP 16 0 CY7C68013A (7C681000A) 4416666 610434406 TAIWN-G COMP 5 0 CY7C68013A (7C682001A) 4416701 610437657 TAIWN-G COMP 5 0 H20549 TAIWN-G COMP 3 0 610437657 TAIWN-G COMP 5 0 TAIWN-G COMP 3 0 STRESS: ACOUSTIC -MSL3 CY7C68013A (7C681000A) 4416666 CY2SSTU877 (7C87741A) 4416666B CY7C68013A (7C681000A) 4416701 CY2SSTU877 (7C87740A) 4417143 STRESS: AGE BOND STRENGTH CY2SSTU877 (7C87740A) 4417143 STRESS: BALL SHEAR CY7C68013A (7C682001A) 4416701 STRESS: DYNAMIC LATCH-UP TESTING (6.9V) CY7C68013A (7C682001A) 4416701 610437657 STRESS: ESD-CHARGE DEVICE MODEL (500V) CY7C68013A (7C682001A) 4416666 610437607 TAIWN-G COMP 9 0 CY7C68013A (7C682000A) 4416666 610437102 TAIWN-G COMP 9 0 CY7C68013A (7C681000A) 4416701 610434407/8 TAIWN-G COMP 9 0 CY7C68013A (7C682000A) 4416701 610437702 TAIWN-G COMP 9 0 H20549 TAIWN-G COMP 9 0 CY2SSTU877 (7C87740A) 4417143 STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, 2,200V CY7C68013A (7C682001A) 4416666 610437607 TAIWN-G COMP 9 0 CY7C68013A (7C681000A) 4416701 610434407/8 TAIWN-G COMP 9 0 CY2SSTU877 (7C82877A) 4413035 H19747 TAIWN-G COMP 9 0 CY2SSTU877 (7C87740A) 4417143 H20549 TAIWN-G COMP 9 0 STRESS: ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015, 2,200V CY7C68013A (7C682001A) 4416666 610437607 TAIWN-G COMP 3 0 CY7C68013A (7C681000A) 4416701 610434407/8 TAIWN-G COMP 3 0 CY2SSTU877 (7C82877A) 4413035 H19747 TAIWN-G COMP 3 0 CY2SSTU877 (7C87740A) 4417143 H20549 TAIWN-G COMP 3 0 Failure Mechanism Cypress Semiconductor FX2LP/FX1-128 Device Family, C8Q-3R Technology, Fab4 Device: CY7C68013/4/5/6A, CY7C64713, CY7C68300/1B, CY7C68320/1 QTP# 044505, V, 1.0 Page 8 of 11 July 2005 Reliability Test Data QTP #: Device Fab Lot # Assy Lot # 033805 Assy Loc Duration Samp Rej Failure Mechanism STRESS: HIGH TEMP STEADY STATE LIFE TEST (150C, 3.63V) CY7C68013A (7C682005A) 4416701 610438121 TAIWN-G 80 80 0 CY7C68013A (7C682005A) 4416701 610438121 TAIWN-G 168 80 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (125C, 3.8V, Vcc Max) CY7C68013A (7C682001A) 4416666 610437607 TAIWN-G 96 499 0 CY7C68013A (7C682005A) 4417143 610443845 TAIWN-G 96 514 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (125C, 3.8V, Vcc Max) CY7C68013A (7C682001A) 4416666 610437607 TAIWN-G 168 200 0 CY7C68013A (7C682001A) 4416666 610437607 TAIWN-G 1000 194 0 CY7C68013A (7C682005A) 4417143 610443845 TAIWN-G 168 208 0 CY7C68013A (7C682005A) 4417143 610443845 TAIWN-G 1000 208 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (125C, 2.35V, Vcc Max) CY2SSTU877 (7C87741A) 4416666B H20592 TAIWN-G 96 276 0 CY2SSTU877 (7C82877A) 4416701 H20501 TAIWN-G 96 126 0 CY2SSTU877 (7C87741A) 4416701 H20500 TAIWN-G 96 89 0 CY2SSTU877 (7C87740A) 4416791B H20536 TAIWN-G 96 169 0 CY2SSTU877 (7C87741A) 4417975 H20583 TAIWN-G 96 304 0 CY2SSTU877 (7C87741A) 4419587 H20650 TAIWN-G 96 500 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (125C, 2.35V, Vcc Max) CY2SSTU877 (7C87741A) 4416666B H20592 TAIWN-G 1000 253 0 CY2SSTU877 (7C87740A) 4417143 H20549 TAIWN-G 168 150 0 CY2SSTU877 (7C87740A) 4417143 H20549 TAIWN-G 1000 150 0 STRESS: HI-ACCEL SATURATION TEST (130C, 85%RH, 3.63V), PRE COND 192 HR, 30C/60%RH, MSL3 CY7C68013A (7C682001A) 4416666 610437607 TAIWN-G 128 47 0 CY7C68013A (7C682001A) 4416666 610437607 TAIWN-G 256 47 0 CY7C68013A (7C682000A) 4416701 610437702 TAIWN-G 128 47 0 CY7C68013A (7C682000A) 4416701 610437702 TAIWN-G 256 45 0 STRESS: HI-ACCEL SATURATION TEST (130C, 85%RH, 1.8V), PRE COND 192 HR, 30C/60%RH, MSL3 CY2SSTU877 (7C87741A) 4417975 H20583 TAIWN-G 128 43 0 Cypress Semiconductor FX2LP/FX1-128 Device Family, C8Q-3R Technology, Fab4 Device: CY7C68013/4/5/6A, CY7C64713, CY7C68300/1B, CY7C68320/1 QTP# 044505, V, 1.0 Page 9 of 11 July 2005 Reliability Test Data QTP #: Device Fab Lot # Assy Lot # 033805 Assy Loc Duration Samp Rej STRESS: LOW TEMPERATURE OPERATING LIFE (-30C, 4.3V) CY7C68013A (7C682005A) 4416701 610438121 TAIWN-G 500 80 0 STRESS: HIGH TEMPERATURE STORAGE, 150C, no bias CY7C68013A (7C681000A) 4416701 610434407/8 TAIWN-G 500 50 0 CY7C68013A (7C681000A) 4416701 610434407/8 TAIWN-G 1000 50 0 CY2SSTU877 (7C87740A) 4417143 H20549 TAIWN-G 500 45 0 CY2SSTU877 (7C87740A) 4417143 H20549 TAIWN-G 1000 45 0 STRESS: PRESSURE COOKER TEST (121C, 100%RH), PRE COND 192 HR, 30C/60%RH, MSL3 CY7C68013A (7C681000A) 4416666 610434406 TAIWN-G 168 50 0 CY7C68013A (7C681000A) 4416666 610434406 TAIWN-G 288 50 0 CY7C68013A (7C681000A) 4416701 610434407/8 TAIWN-G 168 50 0 CY7C68013A (7C681000A) 4416701 610434407/8 TAIWN-G 288 50 0 CY2SSTU877 (7C82877A) 4413035 H19747 TAIWN-G 168 47 0 CY2SSTU877 (7C82877A) 4413035 H19747 TAIWN-G 288 47 0 CY2SSTU877 (7C87740A) 4417143 H20549 TAIWN-G 168 45 0 CY2SSTU877 (7C87740A) 4417143 H20549 TAIWN-G 288 45 0 STRESS: TC COND. C -65C TO 150C, PRE COND 192 HRS, 30C/60%RH, MSL3 CY7C68013A (7C681000A) 4416666 610434406 TAIWN-G 300 50 0 CY7C68013A (7C681000A) 4416666 610434406 TAIWN-G 500 50 0 CY7C68013A (7C681000A) 4416666 610434406 TAIWN-G 1000 50 0 CY7C68013A (7C681000A) 4416701 610434407/8 TAIWN-G 168 50 0 CY7C68013A (7C681000A) 4416701 610434407/8 TAIWN-G 500 50 0 CY7C68013A (7C681000A) 4416701 610434407/8 TAIWN-G 1000 50 0 CY2SSTU877 (7C82877A) 4413035 H19747 TAIWN-G 300 46 0 CY2SSTU877 (7C82877A) 4413035 H19747 TAIWN-G 500 45 0 CY2SSTU877 (7C82877A) 4413035 H19747 TAIWN-G 1000 45 0 CY2SSTU877 (7C87740A) 4417143 H20549 TAIWN-G 300 45 0 CY2SSTU877 (7C87740A) 4417143 H20549 TAIWN-G 500 45 0 CY2SSTU877 (7C87740A) 4417143 H20549 TAIWN-G 1000 45 0 Failure Mechanism Cypress Semiconductor FX2LP/FX1-128 Device Family, C8Q-3R Technology, Fab4 Device: CY7C68013/4/5/6A, CY7C64713, CY7C68300/1B, CY7C68320/1 QTP# 044505, V, 1.0 Page 10 of 11 July 2005 Reliability Test Data QTP #: Device Fab Lot # Assy Lot # 033805 Assy Loc Duration Samp Rej STRESS: STATIC LATCH-UP TESTING (125C, 5.5V, ±300mA) CY2SSTU877 (7C82877A) 4413035 H19747 TAIWN-G COMP 3 0 CY2SSTU877 (7C87740A) 4417143 H20549 TAIWN-G COMP 3 0 COMP 3 0 COMP 3 0 STRESS: STATIC LATCH-UP TESTING (125C, 6.5V, ±300mA) CY7C68013A (7C682001A) 4416666 610437607 TAIWN-G STRESS: STATIC LATCH-UP TESTING (125C, 7.5V, ±300mA) CY7C68013A (7C682001A) 4416701 610437657 TAIWN-G Failure Mechanism Cypress Semiconductor FX2LP/FX1-128 Device Family, C8Q-3R Technology, Fab4 Device: CY7C68013/4/5/6A, CY7C64713, CY7C68300/1B, CY7C68320/1 QTP# 044505, V, 1.0 Page 11 of 11 July 2005 Reliability Test Data QTP #: Device Fab Lot # 044505 Assy Lot # Assy Loc Duration Samp Rej STRESS: ESD-CHARGE DEVICE MODEL (500V) CY7C68013A (7C681000B) 4445356 610500431 TAIWN-G COMP 9 0 9 0 COMP 3 0 STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, 2,200V CY7C68013A (7C681000B) 4445356 610500431 TAIWN-G COMP STRESS: ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015, 2,200V CY7C68013A (7C681000B) 4445356 610500431 TAIWN-G STRESS: STATIC LATCH-UP TESTING (125C, 7.5V, ±100mA) CY7C68013A (7C681000B) 4450548 610508837 TAIWN-G COMP 6 0 CY7C68013A (7C681000B) 4503135 610511953 TAIWN-G COMP 6 0 CY7C68013A (7C681000B) 4507150 610517384 TAIWN-G COMP 6 0 Failure Mechanism