033805 rev 3.0 7C681000A, FX2LP, C8Q-3R.pdf

Cypress Semiconductor
Product Qualification Report
QTP# 033805 VERSION 3.0
March 2007
FX2LP/FX1/AT2LP Device Family
C8Q-3R Technology, Fab 4
CY7C68013A
CY7C68014A
CY7C68015A
CY7C68016A
EZ-USB FX2LP™ USB Microcontroller
CY7C64713
EZ-USB FX1™ USB Microcontroller
Full –Speed USB Peripheral Controller
CY7C68300B
CY7C68301B
CY7C68320
CY7C68321
EZ-USB AT2LP™ USB 2.0 to ATA/ATAPI Bridge
CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA:
Mira Ben-Tzur
Quality Engineering Director
(408) 943-2675
Fredrick Whitwer
Principal Reliability Engineer
(408) 943-2722
Cypress Semiconductor
FX2LP/FX1/AT2LP Device Family, C8Q-3R Technology, Fab4
Device: CY7C68013/4/5/6A, CY7C64713, CY7C68300/1B, CY7C68320/1
QTP# 033805, V, 3.0
Page 2 of 10
March 2007
PRODUCT QUALIFICATION HISTORY
Qual
Report
033805
Description of Qualification Purpose
FX2LP/FX1/AT2LP New Device family on New C8Q-3R Technology, Fab4
Date
Comp
Jan 05
Cypress Semiconductor
FX2LP/FX1/AT2LP Device Family, C8Q-3R Technology, Fab4
Device: CY7C68013/4/5/6A, CY7C64713, CY7C68300/1B, CY7C68320/1
QTP# 033805, V, 3.0
Page 3 of 10
March 2007
PRODUCT DESCRIPTION (for qualification)
Qualification Purpose: New Device Family FX2LP in C8Q-3R Technology from Fab4
Marketing Part #:
CY68013/4/5/6A, CY7C64713, CY7C68300/1B, CY7C68320/1
Device Description:
3.3V, Commercial, available in 100/128-pin TQFP, 56-pin SSOP and QFN
Cypress Division:
Cypress Semiconductor Corporation – Consumer & Computation Division (CCD)
TECHNOLOGY/FAB PROCESS DESCRIPTION
Number of Metal Layers:
4
Metal Composition:
Metal 1: 100A Ti/3,200A Al 0.5% Cu/300A TiW
Metal 2: 150A Ti/4,230A Al 0.5% Cu/300A TiW
Metal 3: 150A Ti/4,230A Al 0.5% Cu/300A TiW
Metal 4: 150A Ti/8,000A Al 0.5% Cu/300A TiW
Passivation Type and Materials:
1,000A TeOs / 9,000A Si3N4
Generic Process Technology/Design Rule (µ-drawn):
CMOS, 0.13 µm
Gate Oxide Material/Thickness (MOS):
SiO2 DGOX 32/55A
Name/Location of Die Fab (prime) Facility:
CMI/Bloomington MN
Die Fab Line ID/Wafer Process ID:
Fab4, C8Q-3R
PACKAGE AVAILABILITY
PACKAGE
ASSEMBLY SITE FACILITY
100-Pin TQFP
CML-R
128-Pin TQFP
TAIWN-G, CML-R
56-Pin SSOP
CML-R
56-Pin QFN
SEOL-L
Note: Package Qualification details upon request.
Cypress Semiconductor
FX2LP/FX1/AT2LP Device Family, C8Q-3R Technology, Fab4
Device: CY7C68013/4/5/6A, CY7C64713, CY7C68300/1B, CY7C68320/1
MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION
Package Designation:
Package Outline, Type, or Name:
Mold Compound Name/Manufacturer:
Mold Compound Flammability Rating:
A100
100-Pin TQFP
Hitachi CEL9200CYR
V-O per UL94
Oxygen Rating Index:
N/A
Lead Frame Designation:
N/A
Lead Frame Material:
Copper
Lead Finish, Composition / Thickness:
NiPdAu
Die Backside Preparation Method/Metallization:
Grinding
Die Separation Method:
Sawing
Die Attach Supplier:
Dexter
Die Attach Material:
QMI 505
Die Attach Method:
Dispensing
Bond Diagram Designation:
10-05741
Wire Bond Method:
Thermosonic
Wire Material/Size:
Au, 1.0mil
Thermal Resistance Theta JA °C/W:
48.2°C/W
Package Cross Section Yes/No:
No
Assembly Process Flow:
11-20046
Name/Location of Assembly (prime) facility:
CML-R
MSL Level
3
Reflow Profile
260C
ELECTRICAL TEST / FINISH DESCRIPTION
Test Location:
CML-R
Note: Please contact a Cypress Representative for other packages availability.
QTP# 033805, V, 3.0
Page 4 of 10
March 2007
Cypress Semiconductor
FX2LP/FX1/AT2LP Device Family, C8Q-3R Technology, Fab4
Device: CY7C68013/4/5/6A, CY7C64713, CY7C68300/1B, CY7C68320/1
QTP# 033805, V, 3.0
Page 5 of 10
March 2007
RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENT
Stress/Test
Test Condition
(Temp/Bias)
Result
P/F
High Temperature Operating Life
Dynamic Operating Condition, Vcc Max=2.35V, 125°C
Early Failure Rate
Dynamic Operating Condition, Vcc Max=3.8V, 125°C
High Temperature Operating Life
Dynamic Operating Condition, Vcc Max=3.8V, 125°C
P
Low Temperature Operating Life
-30C, 4.3V
P
High Temperature Steady State life
150°C, 3.63V, Vcc Max
P
High Temp Storage
150 C, no bias
P
High Accelerated Saturation Test
(HAST)
130°C, 1.8V/3.63V, 85%RH
Precondition: JESD22 Moisture Sensitivity Level 3
P
P
Latent Failure Rate
192 Hrs, 30C/60%RH+3IR-Reflow, 260°C+0, -5°C
Temperature Cycle
MIL-STD-883C, Method 1010, Condition C, -65°C to 150°C
Precondition: JESD22 Moisture Sensitivity Level 3
P
192 Hrs, 30C/60%RH+3IR-Reflow, 260°C+0, -5°C
Pressure Cooker
121°C, 100%RH, 15 Psig
Precondition: JESD22 Moisture Sensitivity Level 3
P
192 Hrs, 30C/60%RH+3IR-Reflow, 260°C+0, -5°C
Electrostatic Discharge
Human Body Model (ESD-HBM)
2,200V
MIL-STD-883, Method 3015.7
P
Electrostatic Discharge
Human Body Model (ESD-HBM)
2,200V
JESD22, Method A114-B
P
Electrostatic Discharge
Charge Device Model (ESD-CDM)
500V
Cypress Spec. 25-00020
P
Age Bond Strength
200C, 4hrs
MIL-STD-883, Method 883-2011
P
Ball Shear
Cypress Spec 24-00018
P
Acoustic Microscopy
Spec. 25-00104
P
Dynamic Latchup Sensitivity
Cypress Spec. 01-00081
P
Latchup Sensitivity
125C, ± 300mA
Cypress Spec. 01-00081
P
Cypress Semiconductor
FX2LP/FX1/AT2LP Device Family, C8Q-3R Technology, Fab4
Device: CY7C68013/4/5/6A, CY7C64713, CY7C68300/1B, CY7C68320/1
QTP# 033805, V, 3.0
Page 6 of 10
March 2007
RELIABILITY FAILURE RATE SUMMARY
Device Tested/
Device Hours
#
Fails
Activation
Energy
Thermal3
A.F
Failure
Rate
High Temperature Operating Life
Early Failure Rate1
2,477 Devices
0
N/A
N/A
0 PPM
High Temperature Operating Life1,2
Long Term Failure Rate
806,008 DHRs
0
0 .7
55
21 FIT
Stress/Test
1
2
3
Assuming an ambient temperature of 55°C and a junction temperature rise of 15°C.
Chi-squared 60% estimations used to calculate the failure rate.
Thermal Acceleration Factor is calculated from the Arrhenius equation
E  1 1  
AF = exp  A  -  
 k  T 2 T1  
where:
EA =The Activation Energy of the defect mechanism.
k = Boltzmann's constant = 8.62x10-5 eV/Kelvin.
T1 is the junction temperature of the device under stress and T2 is the junction temperature of the device
at use conditions.
Cypress Semiconductor
FX2LP/FX1/AT2LP Device Family, C8Q-3R Technology, Fab4
Device: CY7C68013/4/5/6A, CY7C64713, CY7C68300/1B, CY7C68320/1
QTP# 033805, V, 3.0
Page 7 of 10
March 2007
Reliability Test Data
QTP #:
Device
Fab Lot #
033805
Assy Lot #
Assy Loc Duration
Samp
Rej
STRESS: ACOUSTIC-MSL3
CY68013A (7C681000A)
4416666
610434406
TAIWN-G
COMP
17
0
CY2SSTU877 (7C87741A)
4416666B
H20592
TAIWN-G
COMP
16
0
CY68013A (7C681000A)
4416701
610434407/8
TAIWN-G
COMP
17
0
CY2SSTU877 (7C87740A)
4417143
H20549
TAIWN-G
COMP
16
0
STRESS: AGE BOND STRENGTH
CY68013A (7C681000A)
4416666
610434406
TAIWN-G
COMP
5
0
CY68013A (7C682001A)
4416701
610437657
TAIWN-G
COMP
5
0
CY2SSTU877 (7C87740A)
4417143
H20549
TAIWN-G
COMP
3
0
4416701
610437657
TAIWN-G
COMP
5
0
TAIWN-G
COMP
3
0
STRESS: BALL SHEAR
CY68013A (7C682001A)
STRESS: DYNAMIC LATCH-UP TESTING (6.9V)
CY68013A (7C682001A)
4416701
610437657
STRESS: ESD-CHARGE DEVICE MODEL (500V)
CY68013A (7C682001A)
4416666
610437607
TAIWN-G
COMP
9
0
CY68013A (7C682000A)
4416666
610437102
TAIWN-G
COMP
9
0
CY68013A (7C681000A)
4416701
610434407/8
TAIWN-G
COMP
9
0
CY68013A (7C682000A)
4416701
610437702
TAIWN-G
COMP
9
0
CY2SSTU877 (7C87740A)
4417143
H20549
TAIWN-G
COMP
9
0
STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, 2,200V
CY68013A (7C682001A)
4416666
610437607
TAIWN-G
COMP
9
0
CY68013A (7C681000A)
4416701
610434407/8
TAIWN-G
COMP
9
0
CY2SSTU877 (7C82877A)
4413035
H19747
TAIWN-G
COMP
9
0
CY2SSTU877 (7C87740A)
4417143
H20549
TAIWN-G
COMP
9
0
STRESS: ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015, 2,200V
CY68013A (7C682001A)
4416666
610437607
TAIWN-G
COMP
3
0
CY68013A (7C681000A)
4416701
610434407/8
TAIWN-G
COMP
3
0
CY2SSTU877 (7C82877A)
4413035
H19747
TAIWN-G
COMP
3
0
CY2SSTU877 (7C87740A)
4417143
H20549
TAIWN-G
COMP
3
0
Failure Mechanism
Cypress Semiconductor
FX2LP/FX1/AT2LP Device Family, C8Q-3R Technology, Fab4
Device: CY7C68013/4/5/6A, CY7C64713, CY7C68300/1B, CY7C68320/1
QTP# 033805, V, 3.0
Page 8 of 10
March 2007
Reliability Test Data
QTP #:
Device
Fab Lot #
Assy Lot #
033805
Assy Loc Duration Samp
Rej
Failure Mechanism
STRESS: HIGH TEMP STEADY STATE LIFE TEST (150C, 3.63V)
CY68013A (7C682005A)
4416701
610438121
TAIWN-G
80
80
0
CY68013A (7C682005A)
4416701
610438121
TAIWN-G
168
80
0
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (125C, 3.8V, Vcc Max)
CY68013A (7C682001A)
4416666
610437607
TAIWN-G
96
499
0
CY68013A (7C682005A)
4417143
610443845
TAIWN-G
96
514
0
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (125C, 3.8V, Vcc Max)
CY68013A (7C682001A)
4416666
610437607
TAIWN-G
168
200
0
CY68013A (7C682001A)
4416666
610437607
TAIWN-G
1000
194
0
CY68013A (7C682005A)
4417143
610443845
TAIWN-G
168
208
0
CY68013A (7C682005A)
4417143
610443845
TAIWN-G
1000
208
0
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (125C, 2.35V, Vcc Max)
CY2SSTU877 (7C87741A)
4416666B
H20592
TAIWN-G
96
276
0
CY2SSTU877 (7C82877A)
4416701
H20501
TAIWN-G
96
126
0
CY2SSTU877 (7C87741A)
4416701
H20500
TAIWN-G
96
89
0
CY2SSTU877 (7C87740A)
4416791B
H20536
TAIWN-G
96
169
0
CY2SSTU877 (7C87741A)
4417975
H20583
TAIWN-G
96
304
0
CY2SSTU877 (7C87741A)
4419587
H20650
TAIWN-G
96
500
0
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (125C, 3.8V, Vcc Max)
CY2SSTU877 (7C87741A)
4416666B
H20592
TAIWN-G
1000
253
0
CY2SSTU877 (7C87740A)
4417143
H20549
TAIWN-G
168
150
0
CY2SSTU877 (7C87740A)
4417143
H20549
TAIWN-G
1000
150
0
STRESS: HI-ACCEL SATURATION TEST (130C, 85%RH, 3.63V), PRE COND 192 HR, 30C/60%RH, MSL3
CY68013A (7C682001A)
4416666
610437607
TAIWN-G
128
47
0
CY68013A (7C682001A)
4416666
610437607
TAIWN-G
256
47
0
CY68013A (7C682000A)
4416701
610437702
TAIWN-G
128
47
0
CY68013A (7C682000A)
4416701
610437702
TAIWN-G
256
45
0
STRESS: HI-ACCEL SATURATION TEST (130C, 85%RH, 1.8V), PRE COND 192 HR, 30C/60%RH, MSL3
CY2SSTU877 (7C87741A)
4417975
H20583
TAIWN-G
128
43
0
Cypress Semiconductor
FX2LP/FX1/AT2LP Device Family, C8Q-3R Technology, Fab4
Device: CY7C68013/4/5/6A, CY7C64713, CY7C68300/1B, CY7C68320/1
QTP# 033805, V, 3.0
Page 9 of 10
March 2007
Reliability Test Data
QTP #:
Device
Fab Lot #
Assy Lot #
033805
Assy Loc Duration Samp
Rej
STRESS: LOW TEMPERATURE OPERATING LIFE (-30C, 4.3V)
CY68013A (7C682005A)
4416701
610438121
TAIWN-G
500
80
0
STRESS: HIGH TEMPERATURE STORAGE, 150C, no bias
CY68013A (7C681000A)
4416701
610434407/8
TAIWN-G
500
50
0
CY68013A (7C681000A)
4416701
610434407/8
TAIWN-G
1000
50
0
CY2SSTU877 (7C87740A)
4417143
H20549
TAIWN-G
500
45
0
CY2SSTU877 (7C87740A)
4417143
H20549
TAIWN-G
1000
45
0
STRESS: PRESSURE COOKER TEST (121C, 100%RH), PRE COND 192 HR, 30C/60%RH, MSL3
CY68013A (7C681000A)
4416666
610434406
TAIWN-G
168
50
0
CY68013A (7C681000A)
4416666
610434406
TAIWN-G
288
50
0
CY68013A (7C681000A)
4416701
610434407/8
TAIWN-G
168
50
0
CY68013A (7C681000A)
4416701
610434407/8
TAIWN-G
288
50
0
CY2SSTU877 (7C82877A)
4413035
H19747
TAIWN-G
168
47
0
CY2SSTU877 (7C82877A)
4413035
H19747
TAIWN-G
288
47
0
CY2SSTU877 (7C87740A)
4417143
H20549
TAIWN-G
168
45
0
CY2SSTU877 (7C87740A)
4417143
H20549
TAIWN-G
288
45
0
STRESS: TC COND. C -65C TO 150C, PRE COND 192 HRS, 30C/60%RH, MSL3
CY68013A (7C681000A)
4416666
610434406
TAIWN-G
300
50
0
CY68013A (7C681000A)
4416666
610434406
TAIWN-G
500
50
0
CY68013A (7C681000A)
4416666
610434406
TAIWN-G
1000
50
0
CY68013A (7C681000A)
4416701
610434407/8
TAIWN-G
168
50
0
CY68013A (7C681000A)
4416701
610434407/8
TAIWN-G
500
50
0
CY68013A (7C681000A)
4416701
610434407/8
TAIWN-G
1000
50
0
CY2SSTU877 (7C82877A)
4413035
H19747
TAIWN-G
300
46
0
CY2SSTU877 (7C82877A)
4413035
H19747
TAIWN-G
500
45
0
CY2SSTU877 (7C82877A)
4413035
H19747
TAIWN-G
1000
45
0
CY2SSTU877 (7C87740A)
4417143
H20549
TAIWN-G
300
45
0
CY2SSTU877 (7C87740A)
4417143
H20549
TAIWN-G
500
45
0
CY2SSTU877 (7C87740A)
4417143
H20549
TAIWN-G
1000
45
0
Failure Mechanism
Cypress Semiconductor
FX2LP/FX1/AT2LP Device Family, C8Q-3R Technology, Fab4
Device: CY7C68013/4/5/6A, CY7C64713, CY7C68300/1B, CY7C68320/1
QTP# 033805, V, 3.0
Page 10 of 10
March 2007
Reliability Test Data
QTP #:
Device
Fab Lot #
Assy Lot #
033805
Assy Loc Duration Samp
Rej
STRESS: STATIC LATCH-UP TESTING (125C, 5.5V, ±300mA)
CY2SSTU877 (7C82877A)
4413035
H19747
TAIWN-G
COMP
3
0
CY2SSTU877 (7C87740A)
4417143
H20549
TAIWN-G
COMP
3
0
COMP
3
0
COMP
3
0
STRESS: STATIC LATCH-UP TESTING (125C, 6.5V, ±300mA)
CY68013A (7C682001A)
4416666
610437607
TAIWN-G
STRESS: STATIC LATCH-UP TESTING (125C, 7.5V, ±300mA)
CY68013A (7C682001A)
4416701
610437657
TAIWN-G
Failure Mechanism
Similar pages