APT30M30JFLL
300V
POWER MOS 7
R
88A
FREDFET
0.030Ω
S
S
27
®
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
®
losses are addressed with Power MOS 7 by significantly lowering RDS(ON)
®
and Qg. Power MOS 7 combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
VDSS
ID
SO
"UL Recognized"
ISOTOP ®
• Increased Power Dissipation
• Easier To Drive
• Popular SOT-227 Package
• FAST RECOVERY BODY DIODE
MAXIMUM RATINGS
Symbol
2
T-
D
G
D
G
S
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT30M30JFLL
UNIT
300
Volts
Drain-Source Voltage
88
Continuous Drain Current @ TC = 25°C
1
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
VGSM
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
520
Watts
Linear Derating Factor
4.16
W/°C
PD
TJ,TSTG
352
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
EAS
1
-55 to 150
Amps
88
1
Single Pulse Avalanche Energy
°C
300
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
Volts
50
4
mJ
3000
STATIC ELECTRICAL CHARACTERISTICS
MIN
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
300
RDS(on)
Drain-Source On-State Resistance
IDSS
IGSS
VGS(th)
2
(VGS = 10V, ID = 44A)
TYP
MAX
UNIT
Volts
0.030
Ohms
Zero Gate Voltage Drain Current (VDS = 300V, VGS = 0V)
250
Zero Gate Voltage Drain Current (VDS = 240V, VGS = 0V, TC = 125°C)
1000
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
±100
nA
5
Volts
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
µA
7-2004
Characteristic / Test Conditions
050-7160 Rev B
Symbol
APT30M30JFLL
DYNAMIC CHARACTERISTICS
Symbol
Ciss
Characteristic
Test Conditions
Input Capacitance
Coss
VGS = 0V
Output Capacitance
VDS = 25V
Crss
Reverse Transfer Capacitance
f = 1 MHz
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain ("Miller") Charge
td(on)
Turn-on Delay Time
tr
3
RESISTIVE SWITCHING
VGS = 15V
VDD = 150V
ID = 88A @ 25°C
RG = 0.6Ω
9
INDUCTIVE SWITCHING @ 25°C
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
6
815
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
VDD = 200V, VGS = 15V
nC
ns
1185
ID = 88A, RG = 5Ω
INDUCTIVE SWITCHING @ 125°C
6
UNIT
pF
110
140
41
70
15
19
35
VDD = 150V
Fall Time
MAX
7030
1895
ID = 88A @ 25°C
Turn-off Delay Time
tf
TYP
VGS = 10V
Rise Time
td(off)
MIN
µJ
850
VDD = 200V, VGS = 15V
ID = 88A, RG = 5Ω
1250
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
Characteristic / Test Conditions
MIN
TYP
MAX
UNIT
IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current
1
(Body Diode)
352
VSD
Diode Forward Voltage
2
(VGS = 0V, IS = -88A)
1.3
Volts
8
V/ns
dv/
Peak Diode Recovery
dt
dv/
dt
88
5
t rr
Reverse Recovery Time
(IS = -88A, di/dt = 100A/µs)
Tj = 25°C
250
Tj = 125°C
500
Q rr
Reverse Recovery Charge
(IS = -88A, di/dt = 100A/µs)
Tj = 25°C
1.4
Tj = 125°C
4.9
IRRM
Peak Recovery Current
(IS = -88A, di/dt = 100A/µs)
Tj = 25°C
14
Tj = 125°C
25
Amps
ns
µC
Amps
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
TYP
MAX
0.24
RθJC
Junction to Case
RθJA
Junction to Ambient
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
0.9
0.20
0.7
0.15
Note:
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-7160 Rev B
7-2004
0.25
0.10
0.3
t1
t2
Duty Factor D = t1/t2
0.05
0.1
0
SINGLE PULSE
0.05
10-5
10-4
°C/W
4 Starting Tj = +25°C, L = 0.77mH, RG = 25Ω, Peak IL = 88A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID88A di/dt ≤ 700A/µs VR ≤ 300V TJ ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and inforation contained herein.
0.5
UNIT
Peak TJ = PDM x ZθJC + TC
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
Power
(Watts)
0.0651
0.123
0.0203F
0.173F
0.490F
Case temperature
ID, DRAIN CURRENT (AMPERES)
RC MODEL
Junction
temp. ( ”C)
0.0528
APT30M30JFLL
250
VGS =15 &10V
8V
200
7.5V
150
7V
100
6.5
6V
50
5.5V
0
VDS> ID (ON) x RDS(ON) MAX.
250 µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
150
100
TJ = +25°C
50
TJ = +125°C
0
TJ = -55°C
0
2
4
6
8
10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
80
70
60
50
40
30
20
10
0
25
1.10
VGS=10V
1.00
VGS=20V
0.90
0.80
0
20
40 60 80 100 120 140 160 180
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.10
1.05
1.00
0.95
0.90
-50
-25
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
2.5
1.2
I
V
D
= 44A
GS
= 10V
2.0
1.5
1.0
0.5
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, RDS(ON) vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
D
1.20
1.15
90
0.0
-50
1.30
NORMALIZED TO
= 10V @ I = 44A
GS
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
7-2004
200
V
050-7160 Rev B
ID, DRAIN CURRENT (AMPERES)
250
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.40
OPERATION HERE
LIMITED BY RDS (ON)
10,000
100
100µS
1mS
10
10mS
= 88A
VDS=60V
12
VDS=150V
VDS=240V
8
4
0
50
100
150
200
250
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
300
100
TJ =+150°C
TJ =+25°C
10
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
200
120
V
180
td(off)
100
80
V
DD
R
G
G
= 300V
T = 125°C
J
60
L = 100µH
40
= 5Ω
T = 125°C
J
L = 100µH
140
= 5Ω
= 200V
DD
R
160
tr and tf (ns)
td(on) and td(off) (ns)
Crss
100
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D
0
Coss
10
1
10
100
300
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
Ciss
1,000
TC =+25°C
TJ =+150°C
SINGLE PULSE
1
APT30M30JFLL
20,000
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (AMPERES)
352
tf
120
100
80
tr
60
td(on)
40
20
20
0
40
60
0
40
80
100
120
140
160
ID (A)
FIGURE 14, DELAY TIMES vs CURRENT
100
120
140
160
ID (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
V
DD
R
G
V
= 200V
I
= 5Ω
SWITCHING ENERGY (µJ)
7-2004
050-7160 Rev B
L = 100µH
EON includes
diode reverse recovery.
2000
Eoff
1500
1000
Eon
500
0
40
60
80
100
120
140
160
ID (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
SWITCHING ENERGY (µJ)
T = 125°C
J
2500
80
5000
3500
3000
60
DD
D
= 200V
= 88A
T = 125°C
4000
J
L = 100µH
E ON includes
Eoff
diode reverse recovery.
300
2000
Eon
1000
0
0
5
10 15 20 25 30 35 40 45 50
RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
Typical Performance Curves
APT30M30JFLL
90%
Gate Voltage
10%
Gate Voltage
TJ125°C
td(off)
td(on)
tr
5%
Drain Voltage
tf
Drain Current
90%
5%
10%
TJ125°C
90%
10%
Drain Voltage
Switching Energy
Switching Energy
Figure 18, Turn-on Switching Waveforms and Definitions
0
Drain Current
Figure 19, Turn-off Switching Waveforms and Definitions
APT60DS30
V DD
ID
V DS
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
4.0 (.157)
4.2 (.165)
(2 places)
3.3 (.129)
3.6 (.143)
14.9 (.587)
15.1 (.594)
1.95 (.077)
2.14 (.084)
* Source
30.1 (1.185)
30.3 (1.193)
Drain
* Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
38.0 (1.496)
38.2 (1.504)
* Source
Gate
Dimensions in Millimeters and (Inches)
ISOTOP® is a Registered Trademark of SGS Thomson.
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
7-2004
r = 4.0 (.157)
(2 places)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
050-7160 Rev B
7.8 (.307)
8.2 (.322)