APT30M36JLL_B.pdf

APT30M36JLL
300V
POWER MOS 7
R
76A 0.036Ω
MOSFET
®
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
®
losses are addressed with Power MOS 7 by significantly lowering RDS(ON)
®
and Qg. Power MOS 7 combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
VDSS
ID
27
2
T-
D
G
SO
"UL Recognized"
ISOTOP ®
D
• Increased Power Dissipation
• Easier To Drive
• Popular SOT-227 Package
MAXIMUM RATINGS
Symbol
S
S
G
S
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT30M36JLL
UNIT
300
Volts
Drain-Source Voltage
76
Continuous Drain Current @ TC = 25°C
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
VGSM
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
463
Watts
Linear Derating Factor
3.70
W/°C
PD
TJ,TSTG
1
304
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
EAS
1
-55 to 150
Amps
76
1
Single Pulse Avalanche Energy
°C
300
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
Volts
50
4
mJ
2500
STATIC ELECTRICAL CHARACTERISTICS
MIN
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
300
RDS(on)
Drain-Source On-State Resistance
IDSS
IGSS
VGS(th)
2
(VGS = 10V, ID = 38A)
TYP
MAX
Volts
0.036
Zero Gate Voltage Drain Current (VDS = 300V, VGS = 0V)
100
Zero Gate Voltage Drain Current (VDS = 240V, VGS = 0V, TC = 125°C)
500
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
Ohms
µA
±100
nA
5
Volts
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
7-2004
Characteristic / Test Conditions
050-7152 Rev B
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT30M36JLL
Test Conditions
Characteristic
MIN
TYP
Ciss
Input Capacitance
Coss
Output Capacitance
VDS = 25V
1540
Crss
Reverse Transfer Capacitance
f = 1 MHz
75
VGS = 10V
115
VDD = 150V
35
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain ("Miller") Charge
td(on)
ID = 76A @ 25°C
tf
28
VDD = 150V
RG = 0.6Ω
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
5
INDUCTIVE SWITCHING @ 25°C
6
660
VDD = 200V, VGS = 15V
6
ns
29
ID = 76A @ 25°C
Turn-off Delay Time
nC
15
VGS = 15V
Rise Time
td(off)
pF
45
RESISTIVE SWITCHING
Turn-on Delay Time
tr
UNIT
6480
VGS = 0V
3
MAX
ID = 76A, RG = 5Ω
790
INDUCTIVE SWITCHING @ 125°C
770
VDD = 200V, VGS = 15V
ID = 76A, RG = 5Ω
µJ
740
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
MIN
Characteristic / Test Conditions
TYP
MAX
76
UNIT
IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current
1
VSD
Diode Forward Voltage
2
t rr
Reverse Recovery Time (IS = -76A, dl S/dt = 100A/µs)
530
ns
Q rr
Reverse Recovery Charge (IS = -76A, dl S/dt = 100A/µs)
11.5
µC
dv/
Peak Diode Recovery
dt
304
(Body Diode)
1.3
(VGS = 0V, IS = -76A)
Amps
Volts
5
V/ns
MAX
UNIT
dv/
5
dt
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
RθJC
Junction to Case
RθJA
Junction to Ambient
TYP
0.27
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 0.87mH, RG = 25Ω, Peak IL = 76A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID76A di/dt ≤ 700A/µs VR ≤ 300V TJ ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and inforation contained herein.
0.9
0.20
0.7
0.15
0.5
Note:
0.10
0.3
0.05
0.1
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-7152 Rev B
7-2004
0.30
0.25
10-5
t1
t2
SINGLE PULSE
0.05
0
10-4
°C/W
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1
Typical Performance Curves
200
RC MODEL
0.0260
Power
(watts)
10V
0.00119F
0.0585
0.0354F
0.185
0.463F
ID, DRAIN CURRENT (AMPERES)
Junction
temp. (°C)
APT30M36JLL
VGS=15V
9V
160
8V
120
7.5V
80
7V
40
6.5V
Case temperature. (°C)
6V
VDS> ID (ON) x RDS (ON)MAX.
250 µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
200
150
100
TJ = +25°C
50
TJ = +125°C
0
TJ = -55°C
0
2
4
6
8
10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
80
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
60
50
40
30
20
10
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.5
D
1.2
VGS=10V
1.1
1.0
VGS=20V
0.9
0.8
0
20
40
60
80 100 120 140 160
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.15
1.10
1.05
1.00
0.95
0.90
-50
= 38A
GS
= 10V
2.0
1.5
1.0
0.5
0.0
-50
D
1.3
-25
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
I
V
NORMALIZED TO
= 10V @ I = 38A
GS
1.1
1.0
0.9
0.8
7-2004
ID, DRAIN CURRENT (AMPERES)
V
1.20
70
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.4
0.7
0.6
-50
-25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-7152 Rev B
ID, DRAIN CURRENT (AMPERES)
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
250
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
0
10,000
50
100µS
10
1mS
5
10mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
= 76A
D
VDS= 60V
12
VDS=150V
10
VDS= 240V
8
6
4
2
0
0
20
40 60 80 100 120 140 160 180
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
80
100
TJ =+150°C
50
TJ =+25°C
10
5
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
V
DD
R
G
= 200V
= 5Ω
T = 125°C
tf
J
L = 100µH
V
50
DD
R
G
100
= 200V
tr and tf (ns)
td(on) and td(off) (ns)
Crss
120
60
= 5Ω
T = 125°C
J
40
L = 100µH
30
td(on)
20
80
tr
60
40
20
10
0
40
60
0
40
100
120
140
ID (A)
FIGURE 14, DELAY TIMES vs CURRENT
80
100
120
140
ID (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
DD
R
G
= 5Ω
Eoff
T = 125°C
J
L = 100µH
E ON includes
diode reverse recovery.
1000
500
Eon
2500
Eoff
2000
1500
Eon
V
1000
DD
I
D
60
80
100
120
140
ID (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
= 200V
= 76A
T = 125°C
J
500
0
40
80
= 200V
SWITCHING ENERGY (µJ)
V
1500
60
3000
2000
SWITCHING ENERGY (µJ)
100
140
td(off)
70
7-2004
500
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
200
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
14
Coss
1,000
10
1
5
10
50 100
300
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
050-7152 Rev B
Ciss
5,000
100
1
APT30M36JLL
20,000
OPERATION HERE
LIMITED BY RDS (ON)
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (AMPERES)
304
0
L = 100µH
EON includes
diode reverse recovery.
0
5
10 15 20 25 30 35 40 45 50
RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
Typical Performance Curves
APT30M36JLL
90%
10%
Gate Voltage
Gate Voltage
TJ125°C
td(off)
td(on)
tf
tr
Drain Current
90%
5%
5%
10%
TJ125°C
Drain Voltage
90%
10%
Drain Voltage
0
Drain Current
Switching Energy
Switching Energy
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT60DS30
V DD
ID
V DS
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
4.0 (.157)
4.2 (.165)
(2 places)
3.3 (.129)
3.6 (.143)
14.9 (.587)
15.1 (.594)
1.95 (.077)
2.14 (.084)
* Source
30.1 (1.185)
30.3 (1.193)
Drain
* Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
38.0 (1.496)
38.2 (1.504)
* Source
Gate
Dimensions in Millimeters and (Inches)
ISOTOP® is a Registered Trademark of SGS Thomson.
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
7-2004
r = 4.0 (.157)
(2 places)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
050-7152 Rev B
7.8 (.307)
8.2 (.322)
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