APT30M30JLL_B.pdf

APT30M30JLL
300V
POWER MOS 7
R
MOSFET
®
Symbol
27
2
T-
D
G
SO
"UL Recognized"
ISOTOP ®
D
• Increased Power Dissipation
• Easier To Drive
• Popular SOT-227 Package
MAXIMUM RATINGS
S
S
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
®
losses are addressed with Power MOS 7 by significantly lowering RDS(ON)
®
and Qg. Power MOS 7 combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
88A 0.030Ω
G
S
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT30M30JLL
UNIT
Drain-Source Voltage
300
Volts
ID
Continuous Drain Current @ TC = 25°C
88
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
VGSM
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
520
Watts
Linear Derating Factor
4.16
W/°C
VDSS
PD
TJ,TSTG
1
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
EAS
1
Amps
352
-55 to 150
°C
300
Amps
88
(Repetitive and Non-Repetitive)
1
Single Pulse Avalanche Energy
Volts
50
4
mJ
3000
STATIC ELECTRICAL CHARACTERISTICS
MIN
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
300
RDS(on)
Drain-Source On-State Resistance
IDSS
IGSS
VGS(th)
2
(VGS = 10V, ID = 44A)
TYP
MAX
Volts
0.030
Zero Gate Voltage Drain Current (VDS = 300V, VGS = 0V)
100
Zero Gate Voltage Drain Current (VDS = 240V, VGS = 0V, TC = 125°C)
500
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
Ohms
µA
±100
nA
5
Volts
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
7-2004
Characteristic / Test Conditions
050-7154 Rev B
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT30M30JLL
Test Conditions
Characteristic
MIN
TYP
Ciss
Input Capacitance
Coss
Output Capacitance
VDS = 25V
1895
Reverse Transfer Capacitance
f = 1 MHz
110
VGS = 10V
140
VDD = 150V
41
Crss
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain ("Miller") Charge
td(on)
Turn-on Delay Time
tr
ID = 88A @ 25°C
tf
19
VDD = 150V
RG = 0.6Ω
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
9
INDUCTIVE SWITCHING @ 25°C
6
815
VDD = 200V, VGS = 15V
6
ns
35
ID = 88A @ 25°C
Fall Time
nC
15
VGS = 15V
Turn-off Delay Time
pF
70
RESISTIVE SWITCHING
Rise Time
td(off)
UNIT
7030
VGS = 0V
3
MAX
ID = 88A, RG = 5Ω
1185
INDUCTIVE SWITCHING @ 125°C
850
VDD = 200V, VGS = 15V
ID = 88A, RG = 5Ω
µJ
1250
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
MIN
Characteristic / Test Conditions
TYP
MAX
88
UNIT
IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current
1
VSD
Diode Forward Voltage
2
t rr
Reverse Recovery Time (IS = -88A, dl S/dt = 100A/µs)
450
ns
Q
Reverse Recovery Charge (IS = -88A, dl S/dt = 100A/µs)
10.0
µC
rr
dv/
dt
Peak Diode Recovery
dv/
352
(Body Diode)
1.3
(VGS = 0V, IS = -88A)
dt
5
Amps
Volts
5
V/ns
MAX
UNIT
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
RθJC
Junction to Case
RθJA
Junction to Ambient
TYP
0.24
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 0.77mH, RG = 25Ω, Peak IL = 88A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID88A di/dt ≤ 700A/µs VR ≤ 300V TJ ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and inforation contained herein.
0.9
0.20
0.7
0.15
Note:
0.10
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-7154 Rev B
7-2004
0.25
0.5
0.3
t1
t2
Duty Factor D = t1/t2
0.05
0.1
0
Peak TJ = PDM x ZθJC + TC
0.05
10-5
SINGLE PULSE
10-4
°C/W
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
Power
(Watts)
0.0651
0.123
0.0203F
0.173F
0.490F
Case temperature
ID, DRAIN CURRENT (AMPERES)
Junction
temp. ( ”C)
0.0528
APT30M30JLL
250
RC MODEL
VGS =15 &10V
8V
200
7.5V
150
7V
100
6.5
6V
50
5.5V
0
VDS> ID (ON) x RDS(ON) MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
150
100
TJ = +25°C
50
TJ = +125°C
0
TJ = -55°C
0
2
4
6
8
10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
80
70
60
50
40
30
20
10
0
25
1.10
VGS=10V
1.00
VGS=20V
0.90
0.80
0
20
40 60 80 100 120 140 160 180
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.10
1.05
1.00
0.95
0.90
-50
-25
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
2.5
1.2
I
D
V
= 44A
GS
= 10V
2.0
1.5
1.0
0.5
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, RDS(ON) vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
D
1.20
1.15
90
0.0
-50
1.30
NORMALIZED TO
= 10V @ I = 44A
GS
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
7-2004
200
V
050-7154 Rev B
ID, DRAIN CURRENT (AMPERES)
250
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.40
OPERATION HERE
LIMITED BY RDS (ON)
10,000
100
100µS
1mS
10
10mS
D
= 88A
VDS=60V
VDS=150V
VDS=240V
8
4
0
50
100
150
200
250
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
300
100
TJ =+150°C
TJ =+25°C
10
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
200
120
V
180
td(off)
100
80
V
DD
R
G
G
= 300V
T = 125°C
J
60
L = 100µH
40
= 5Ω
T = 125°C
J
L = 100µH
140
= 5Ω
= 200V
DD
R
160
tr and tf (ns)
td(on) and td(off) (ns)
Crss
100
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
12
0
Coss
10
1
10
100
300
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
Ciss
1,000
TC =+25°C
TJ =+150°C
SINGLE PULSE
1
APT30M30JLL
20,000
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (AMPERES)
352
tf
120
100
80
tr
60
td(on)
40
20
20
0
40
60
0
40
80
100
120
140
160
ID (A)
FIGURE 14, DELAY TIMES vs CURRENT
100
120
140
160
ID (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
5000
3500
V
R
G
I
= 5Ω
T = 125°C
050-7154 Rev B
SWITCHING ENERGY (µJ)
7-2004
J
2500
L = 100µH
EON includes
diode reverse recovery.
2000
Eoff
1500
1000
Eon
500
0
40
V
= 200V
60
80
100
120
140
160
ID (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
SWITCHING ENERGY (µJ)
3000
DD
60
DD
D
80
= 200V
= 88A
T = 125°C
4000
J
L = 100µH
E ON includes
Eoff
diode reverse recovery.
300
2000
Eon
1000
0
0
5
10 15 20 25 30 35 40 45 50
RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
Typical Performance Curves
APT30M30JLL
90%
Gate Voltage
10%
Gate Voltage
TJ125°C
td(off)
td(on)
tr
5%
Drain Voltage
tf
Drain Current
90%
5%
10%
TJ125°C
90%
10%
Drain Voltage
Switching Energy
Switching Energy
Figure 18, Turn-on Switching Waveforms and Definitions
0
Drain Current
Figure 19, Turn-off Switching Waveforms and Definitions
APT60DS30
V DD
ID
V DS
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
4.0 (.157)
4.2 (.165)
(2 places)
3.3 (.129)
3.6 (.143)
14.9 (.587)
15.1 (.594)
1.95 (.077)
2.14 (.084)
* Source
30.1 (1.185)
30.3 (1.193)
Drain
* Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
38.0 (1.496)
38.2 (1.504)
* Source
Gate
Dimensions in Millimeters and (Inches)
ISOTOP® is a Registered Trademark of SGS Thomson.
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
7-2004
r = 4.0 (.157)
(2 places)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
050-7154 Rev B
7.8 (.307)
8.2 (.322)
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