APT35GT120JU2-Rev2.pdf

APT35GT120JU2
ISOTOP® Boost chopper
Trench + Field Stop IGBT3
K
C
G
E
K
E
C
G
ISOTOP
VCES = 1200V
IC = 35A @ Tc = 80°C
Application
 AC and DC motor control
 Switched Mode Power Supplies
 Power Factor Correction
 Brake switch
Features
 Trench + Field Stop IGBT3 Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
 ISOTOP® Package (SOT-227)
 Very low stray inductance
 High level of integration
Benefits
 Low conduction losses
 Stable temperature behavior
 Very rugged
 Direct mounting to heatsink (isolated package)
 Low junction to case thermal resistance
 Easy paralleling due to positive TC of VCEsat
 RoHS Compliant

Absolute maximum ratings
Parameter
Collector - Emitter Breakdown Voltage
TC = 25°C
Max ratings
1200
55
35
80
±20
260
TC = 80°C
27
TC = 25°C
TC = 80°C
TC = 25°C
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
IFAV
Maximum Average Forward Current
Duty cycle=0.5
IFRMS
RMS Forward Current (Square wave, 50% duty)
34
Unit
V
A
V
W
A
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
www.microsemi.com
1-8
APT35GT120JU2 – Rev 2 October 2012
Symbol
VCES
IC1
IC2
ICM
VGE
PD
APT35GT120JU2
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
ICES
Zero Gate Voltage Collector Current
VCE(sat)
Collector Emitter saturation Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
Test Conditions
VGE = 0V, VCE = 1200V
Tj = 25°C
VGE =15V
IC = 35A
Tj = 125°C
VGE = VCE, IC = 3mA
VGE = ±20V, VCE = 0V
Min
Typ
1.4
1.7
2.0
Test Conditions
VGE = 0V
VCE = 25V
f = 1MHz
Min
5.0
Max
5
2.1
Unit
mA
6.5
500
V
nA
Max
Unit
V
Dynamic Characteristics
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Td(off)
Turn-off Delay Time
Tf
Td(on)
Tr
Td(off)
Tf
Eon
Eoff
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Resistive Switching (25°C)
VGE = 15V
VBus = 600V
IC = 35A
RG = 27
Inductive Switching (125°C)
VGE = 15V
VBus = 600V
IC = 35A
RG = 27
www.microsemi.com
Typ
2530
132
115
85
30
420
62
90
45
520
90
5.8
4.6
pF
ns
ns
mJ
2-8
APT35GT120JU2 – Rev 2 October 2012
Symbol
Cies
Coes
Cres
Td(on)
Tr
APT35GT120JU2
Chopper diode ratings and characteristics
Symbol
VF
Characteristic
Diode Forward Voltage
IRM
Maximum Reverse Leakage Current
CT
Junction Capacitance
Reverse Recovery Time
trr
Test Conditions
IF = 30A
IF = 60A
IF = 30A
VR = 1200V
VR = 1200V
VR = 200V
IF=1A,VR=30V
di/dt =100A/µs
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
31
IF = 30A
VR = 800V
di/dt =200A/µs
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
370
500
5
12
660
3450
220
4650
37
Reverse Recovery Time
IRRM
Qrr
trr
Qrr
IRRM
Maximum Reverse Recovery Current
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
IF = 30A
VR = 800V
di/dt =1000A/µs
Min
Typ
2.0
2.3
1.8
Max
2.5
V
250
500
32
Tj = 125°C
Unit
µA
pF
ns
A
nC
ns
nC
A
Thermal and package characteristics
Symbol Characteristic
Min
RthJC
Junction to Case Thermal Resistance
RthJA
VISOL
TJ,TSTG
TL
Torque
Wt
Junction to Ambient (IGBT & Diode)
Typ
IGBT
Diode
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
Storage Temperature Range
Max Lead Temp for Soldering:0.063” from case for 10 sec
Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine)
Package Weight
2500
-55
Max
0.48
1.1
20
Unit
°C/W
V
150
300
1.5
29.2
°C
N.m
g
Operating Frequency vs Collector Current
60
V CE=600V
D=50%
RG=27Ω
TJ =125°C
50
40
30
20
10
0
0
10
20
30
40
50
60
IC (A)
www.microsemi.com
3-8
APT35GT120JU2 – Rev 2 October 2012
Fmax, Operating Frequency (kHz)
Typical IGBT Performance Curve
APT35GT120JU2
Output Characteristics (VGE=15V)
Output Characteristics
70
70
60
TJ=125°C
VGE=17V
50
IC (A)
IC (A)
50
40
30
VGE=15V
VGE=9V
30
20
10
10
0
0
1
2
VCE (V)
3
4
0
1
2
VCE (V)
TJ=25°C
50
10
E (mJ)
TJ=125°C
30
8
Eoff
6
20
4
10
2
0
0
5
6
7
8
9
10
11
10
12
20
30
Switching Energy Losses vs Gate Resistance
VCE = 600V
VGE =15V
IC = 35A
TJ = 125°C
40
50
60
70
80
IC (A)
VGE (V)
Reverse Safe Operating Area
90
Eon
80
70
60
5
IC (A)
E (mJ)
Eon
VCE = 600V
VGE = 15V
RG = 27Ω
TJ = 125°C
12
40
6
4
14
60
7
3
Energy losses vs Collector Current
Transfert Characteristics
70
8
VGE=13V
40
20
0
IC (A)
TJ = 125°C
60
TJ=25°C
Eoff
50
40
30
4
VGE=15V
TJ=125°C
RG=27Ω
20
3
10
0
2
10
15
20 25 30 35 40 45
Gate Resistance (ohms)
50
0
55
400
800
1200
1600
VCE (V)
IGBT
Single Pulse
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
www.microsemi.com
4-8
APT35GT120JU2 – Rev 2 October 2012
Thermal Impedance (°C/W)
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.5
0.9
0.45
0.4
0.7
0.35
0.3
0.5
0.25
0.2
0.3
0.15
0.1
0.1
0.05
0.05
0
0.00001
APT35GT120JU2
www.microsemi.com
5-8
APT35GT120JU2 – Rev 2 October 2012
Typical Diode Performance Curve
www.microsemi.com
6-8
APT35GT120JU2 – Rev 2 October 2012
APT35GT120JU2
APT35GT120JU2
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
r = 4.0 (.157)
(2 places)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
4.0 (.157)
4.2 (.165)
(2 places)
3.3 (.129)
3.6 (.143)
14.9 (.587)
15.1 (.594)
1.95 (.077)
2.14 (.084)
Cathode
30.1 (1.185)
30.3 (1.193)
Collector
* Emitter terminals are shorted
internally. Current handling
capability is equal for either
Emitter terminal.
38.0 (1.496)
38.2 (1.504)
Emitter
Gate
ISOTOP® is a registered trademark of ST Microelectronics NV
www.microsemi.com
7-8
APT35GT120JU2 – Rev 2 October 2012
Dimensions in Millimeters and (Inches)
APT35GT120JU2
DISCLAIMER
The information contained in the document (unless it is publicly available on the Web without access restrictions) is
PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted,
transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. If the
recipient of this document has entered into a disclosure agreement with Microsemi, then the terms of such Agreement
will also apply. This document and the information contained herein may not be modified, by any person other than
authorized personnel of Microsemi. No license under any patent, copyright, trade secret or other intellectual property
right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication,
inducement, estoppels or otherwise. Any license under such intellectual property rights must be approved by
Microsemi in writing signed by an officer of Microsemi.
Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime
without any notice. This product has been subject to limited testing and should not be used in conjunction with lifesupport or other mission-critical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi
disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or
warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other
intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or
user must conduct and complete all performance and other testing of this product as well as any user or customers final
application. User or customer shall not rely on any data and performance specifications or parameters provided by
Microsemi. It is the customer’s and user’s responsibility to independently determine suitability of any Microsemi
product and to test and verify the same. The information contained herein is provided “AS IS, WHERE IS” and with all
faults, and the entire risk associated with such information is entirely with the User. Microsemi specifically disclaims
any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. The product
is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp
Life Support Application
Seller's Products are not designed, intended, or authorized for use as components in systems intended for space,
aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other
application in which the failure of the Seller's Product could create a situation where personal injury, death or property
damage or loss may occur (collectively "Life Support Applications").
Buyer agrees not to use Products in any Life Support Applications and to the extent it does it shall conduct extensive
testing of the Product in such applications and further agrees to indemnify and hold Seller, and its officers, employees,
subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, damages and
expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damage
or otherwise associated with the use of the goods in Life Support Applications, even if such claim includes allegations
that Seller was negligent regarding the design or manufacture of the goods.
www.microsemi.com
8-8
APT35GT120JU2 – Rev 2 October 2012
Buyer must notify Seller in writing before using Seller’s Products in Life Support Applications. Seller will study with
Buyer alternative solutions to meet Buyer application specification based on Sellers sales conditions applicable for the
new proposed specific part.
Similar pages