APT35GT120JU2 ISOTOP® Boost chopper Trench + Field Stop IGBT3 K C G E K E C G ISOTOP VCES = 1200V IC = 35A @ Tc = 80°C Application AC and DC motor control Switched Mode Power Supplies Power Factor Correction Brake switch Features Trench + Field Stop IGBT3 Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated ISOTOP® Package (SOT-227) Very low stray inductance High level of integration Benefits Low conduction losses Stable temperature behavior Very rugged Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive TC of VCEsat RoHS Compliant Absolute maximum ratings Parameter Collector - Emitter Breakdown Voltage TC = 25°C Max ratings 1200 55 35 80 ±20 260 TC = 80°C 27 TC = 25°C TC = 80°C TC = 25°C Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation IFAV Maximum Average Forward Current Duty cycle=0.5 IFRMS RMS Forward Current (Square wave, 50% duty) 34 Unit V A V W A These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. www.microsemi.com 1-8 APT35GT120JU2 – Rev 2 October 2012 Symbol VCES IC1 IC2 ICM VGE PD APT35GT120JU2 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1200V Tj = 25°C VGE =15V IC = 35A Tj = 125°C VGE = VCE, IC = 3mA VGE = ±20V, VCE = 0V Min Typ 1.4 1.7 2.0 Test Conditions VGE = 0V VCE = 25V f = 1MHz Min 5.0 Max 5 2.1 Unit mA 6.5 500 V nA Max Unit V Dynamic Characteristics Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Td(off) Turn-off Delay Time Tf Td(on) Tr Td(off) Tf Eon Eoff Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Resistive Switching (25°C) VGE = 15V VBus = 600V IC = 35A RG = 27 Inductive Switching (125°C) VGE = 15V VBus = 600V IC = 35A RG = 27 www.microsemi.com Typ 2530 132 115 85 30 420 62 90 45 520 90 5.8 4.6 pF ns ns mJ 2-8 APT35GT120JU2 – Rev 2 October 2012 Symbol Cies Coes Cres Td(on) Tr APT35GT120JU2 Chopper diode ratings and characteristics Symbol VF Characteristic Diode Forward Voltage IRM Maximum Reverse Leakage Current CT Junction Capacitance Reverse Recovery Time trr Test Conditions IF = 30A IF = 60A IF = 30A VR = 1200V VR = 1200V VR = 200V IF=1A,VR=30V di/dt =100A/µs Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C 31 IF = 30A VR = 800V di/dt =200A/µs Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 370 500 5 12 660 3450 220 4650 37 Reverse Recovery Time IRRM Qrr trr Qrr IRRM Maximum Reverse Recovery Current Reverse Recovery Charge Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current IF = 30A VR = 800V di/dt =1000A/µs Min Typ 2.0 2.3 1.8 Max 2.5 V 250 500 32 Tj = 125°C Unit µA pF ns A nC ns nC A Thermal and package characteristics Symbol Characteristic Min RthJC Junction to Case Thermal Resistance RthJA VISOL TJ,TSTG TL Torque Wt Junction to Ambient (IGBT & Diode) Typ IGBT Diode RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Storage Temperature Range Max Lead Temp for Soldering:0.063” from case for 10 sec Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) Package Weight 2500 -55 Max 0.48 1.1 20 Unit °C/W V 150 300 1.5 29.2 °C N.m g Operating Frequency vs Collector Current 60 V CE=600V D=50% RG=27Ω TJ =125°C 50 40 30 20 10 0 0 10 20 30 40 50 60 IC (A) www.microsemi.com 3-8 APT35GT120JU2 – Rev 2 October 2012 Fmax, Operating Frequency (kHz) Typical IGBT Performance Curve APT35GT120JU2 Output Characteristics (VGE=15V) Output Characteristics 70 70 60 TJ=125°C VGE=17V 50 IC (A) IC (A) 50 40 30 VGE=15V VGE=9V 30 20 10 10 0 0 1 2 VCE (V) 3 4 0 1 2 VCE (V) TJ=25°C 50 10 E (mJ) TJ=125°C 30 8 Eoff 6 20 4 10 2 0 0 5 6 7 8 9 10 11 10 12 20 30 Switching Energy Losses vs Gate Resistance VCE = 600V VGE =15V IC = 35A TJ = 125°C 40 50 60 70 80 IC (A) VGE (V) Reverse Safe Operating Area 90 Eon 80 70 60 5 IC (A) E (mJ) Eon VCE = 600V VGE = 15V RG = 27Ω TJ = 125°C 12 40 6 4 14 60 7 3 Energy losses vs Collector Current Transfert Characteristics 70 8 VGE=13V 40 20 0 IC (A) TJ = 125°C 60 TJ=25°C Eoff 50 40 30 4 VGE=15V TJ=125°C RG=27Ω 20 3 10 0 2 10 15 20 25 30 35 40 45 Gate Resistance (ohms) 50 0 55 400 800 1200 1600 VCE (V) IGBT Single Pulse 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 4-8 APT35GT120JU2 – Rev 2 October 2012 Thermal Impedance (°C/W) maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.5 0.9 0.45 0.4 0.7 0.35 0.3 0.5 0.25 0.2 0.3 0.15 0.1 0.1 0.05 0.05 0 0.00001 APT35GT120JU2 www.microsemi.com 5-8 APT35GT120JU2 – Rev 2 October 2012 Typical Diode Performance Curve www.microsemi.com 6-8 APT35GT120JU2 – Rev 2 October 2012 APT35GT120JU2 APT35GT120JU2 SOT-227 (ISOTOP®) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 1.95 (.077) 2.14 (.084) Cathode 30.1 (1.185) 30.3 (1.193) Collector * Emitter terminals are shorted internally. Current handling capability is equal for either Emitter terminal. 38.0 (1.496) 38.2 (1.504) Emitter Gate ISOTOP® is a registered trademark of ST Microelectronics NV www.microsemi.com 7-8 APT35GT120JU2 – Rev 2 October 2012 Dimensions in Millimeters and (Inches) APT35GT120JU2 DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. If the recipient of this document has entered into a disclosure agreement with Microsemi, then the terms of such Agreement will also apply. This document and the information contained herein may not be modified, by any person other than authorized personnel of Microsemi. 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