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APTGT100DU120TG
Dual common source
Fast Trench + Field Stop IGBT3
Power Module
C1
Application
 AC Switches
 Switched Mode Power Supplies
 Uninterruptible Power Supplies
C2
Q1
VCES = 1200V
IC = 100A @ Tc = 80°C
Q2
G1
G2
E1
E2
E
NTC1
NTC2
Features
 Fast Trench + Field Stop IGBT3 Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
 Kelvin emitter for easy drive
 Very low stray inductance
- Symmetrical design
- Lead frames for power connections
 High level of integration
 Internal thermistor for temperature monitoring
Benefits
 Stable temperature behavior
 Very rugged
 Solderable terminals for easy PCB mounting
 Direct mounting to heatsink (isolated package)
 Low junction to case thermal resistance
 Easy paralleling due to positive TC of VCEsat
 Low profile
 RoHS Compliant
Absolute maximum ratings
Parameter
Collector - Emitter Breakdown Voltage
IC
Continuous Collector Current
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
RBSOA
Reverse Bias Safe Operating Area
TC = 25°C
Max ratings
1200
140
100
200
±20
480
Tj = 125°C
200A @ 1100V
TC = 25°C
TC = 80°C
TC = 25°C
Unit
V
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1-6
APTGT100DU120TG – Rev 2 October, 2012
Symbol
VCES
APTGT100DU120TG
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
ICES
Test Conditions
Zero Gate Voltage Collector Current
VCE(sat)
Collector Emitter Saturation Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
VGE = 0V, VCE = 1200V
Tj = 25°C
VGE =15V
IC = 100A
Tj = 125°C
VGE = VCE , IC = 2 mA
VGE = 20V, VCE = 0V
Min
Typ
1.4
1.7
2.0
5.8
5.0
Max
Unit
250
2.1
µA
6.5
400
V
nA
Max
Unit
V
Dynamic Characteristics
Symbol
Cies
Coes
Cres
Td(on)
Tr
Td(off)
Tf
Td(on)
Tr
Td(off)
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Test Conditions
VGE = 0V
VCE = 25V
f = 1MHz
Inductive Switching (25°C)
VGE = ±15V
VBus = 600V
IC = 100A
RG = 3.9
Inductive Switching (125°C)
VGE = ±15V
VBus = 600V
IC = 100A
RG = 3.9
VGE = ±15V
Tj = 125°C
VBus = 600V
IC = 100A
Tj = 125°C
RG = 3.9
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Tf
Fall Time
Eon
Turn on Energy
Eoff
Turn off Energy
Min
Typ
7200
400
300
260
30
420
pF
ns
70
290
50
520
ns
90
10
mJ
10
Reverse diode ratings and characteristics
IRM
IF
Maximum Reverse Leakage Current
Test Conditions
VR=1200V
DC Forward Current
VF
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Er
Reverse Recovery Energy
IF = 100A
VGE = 0V
IF = 100A
VR = 600V
di/dt =2000A/µs
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Min
1200
Typ
Tj = 25°C
Tj = 125°C
Tc = 80°C
Tj = 25°C
Tj = 125°C
100
1.6
1.6
Tj = 25°C
170
Tj = 125°C
Tj = 25°C
280
9
Tj = 125°C
Tj = 25°C
Tj = 125°C
18
5
9
Max
250
500
Unit
V
µA
A
2.1
V
ns
µC
mJ
2-6
APTGT100DU120TG – Rev 2 October, 2012
Symbol Characteristic
VRRM Maximum Peak Repetitive Reverse Voltage
APTGT100DU120TG
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic
Resistance @ 25°C
R25
B 25/85 T25 = 298.15 K
RT 
Min
Typ
50
3952
Max
Unit
k
K
Min
Typ
Max
0.26
0.48
Unit
R25
T: Thermistor temperature

 1
1  RT: Thermistor value at T
 
exp  B25 / 85 
 T25 T 

Thermal and package characteristics
Symbol Characteristic
RthJC
VISOL
TJ
TSTG
TC
Torque
Wt
IGBT
Diode
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
To Heatsink
M5
4000
-40
-40
-40
2.5
°C/W
V
150
125
100
4.7
160
°C
N.m
g
See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com
www.microsemi.com
3-6
APTGT100DU120TG – Rev 2 October, 2012
SP4 Package outline (dimensions in mm)
APTGT100DU120TG
Typical Performance Curve
Output Characteristics (VGE=15V)
200
TJ=125°C
VGE=17V
150
100
VGE=13V
VGE=15V
IC (A)
IC (A)
TJ = 125°C
TJ=25°C
150
Output Characteristics
200
100
VGE=9V
50
50
0
0
0
1
2
VCE (V)
4
0
Transfert Characteristics
200
175
15
E (mJ)
100
50
TJ=125°C
3
4
Eon
Eoff
Er
10
75
2
VCE (V)
VCE = 600V
VGE = 15V
RG = 3.9 Ω
TJ = 125°C
20
TJ=125°C
125
1
Energy losses vs Collector Current
25
TJ=25°C
150
IC (A)
3
Eon
5
25
0
0
5
6
7
8
9
10
11
0
12
25
50
Switching Energy Losses vs Gate Resistance
Eon
200
160
IC (A)
E (mJ)
240
VCE = 600V
VGE =15V
IC = 100A
TJ = 125°C
15
100 125 150 175 200
Reverse Bias Safe Operating Area
25
20
75
IC (A)
VGE (V)
Eoff
10
120
Er
80
5
VGE=15V
TJ=125°C
RG=3.9 Ω
40
0
0
0
5
10
15
20
Gate Resistance (ohms)
25
0
300
600
900
VCE (V)
1200
1500
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.25
0.9
0.2
0.7
0.15
0.5
0.1
0.3
0.05
IGBT
0.1
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
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4-6
APTGT100DU120TG – Rev 2 October, 2012
Thermal Impedance (°C/W)
0.3
APTGT100DU120TG
Forward Characteristic of diode
200
VCE=600V
D=50%
RG=3.9 Ω
TJ=125°C
Tc=75°C
50
ZVS
40
ZCS
TJ=25°C
150
IF (A)
Fmax, Operating Frequency (kHz)
Operating Frequency vs Collector Current
60
30
TJ=125°C
100
20
50
10
TJ=125°C
Hard
switching
0
0
0
20
40
60
80
100
120
0
140
0.4
IC (A)
0.8
1.2
1.6
VF (V)
2
2.4
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.4
0.3
Diode
0.7
0.5
0.2
0.3
0.1
0.1
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
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5-6
APTGT100DU120TG – Rev 2 October, 2012
Thermal Impedance (°C/W)
0.5
APTGT100DU120TG
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Microsemi in writing signed by an officer of Microsemi.
Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime
without any notice. This product has been subject to limited testing and should not be used in conjunction with lifesupport or other mission-critical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi
disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or
warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other
intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or
user must conduct and complete all performance and other testing of this product as well as any user or customers final
application. User or customer shall not rely on any data and performance specifications or parameters provided by
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is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp
Life Support Application
Seller's Products are not designed, intended, or authorized for use as components in systems intended for space,
aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other
application in which the failure of the Seller's Product could create a situation where personal injury, death or property
damage or loss may occur (collectively "Life Support Applications").
Buyer agrees not to use Products in any Life Support Applications and to the extent it does it shall conduct extensive
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subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, damages and
expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damage
or otherwise associated with the use of the goods in Life Support Applications, even if such claim includes allegations
that Seller was negligent regarding the design or manufacture of the goods.
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6-6
APTGT100DU120TG – Rev 2 October, 2012
Buyer must notify Seller in writing before using Seller’s Products in Life Support Applications. Seller will study with
Buyer alternative solutions to meet Buyer application specification based on Sellers sales conditions applicable for the
new proposed specific part.