APTGT100DU120TG Dual common source Fast Trench + Field Stop IGBT3 Power Module C1 Application AC Switches Switched Mode Power Supplies Uninterruptible Power Supplies C2 Q1 VCES = 1200V IC = 100A @ Tc = 80°C Q2 G1 G2 E1 E2 E NTC1 NTC2 Features Fast Trench + Field Stop IGBT3 Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated Kelvin emitter for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections High level of integration Internal thermistor for temperature monitoring Benefits Stable temperature behavior Very rugged Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive TC of VCEsat Low profile RoHS Compliant Absolute maximum ratings Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA Reverse Bias Safe Operating Area TC = 25°C Max ratings 1200 140 100 200 ±20 480 Tj = 125°C 200A @ 1100V TC = 25°C TC = 80°C TC = 25°C Unit V A V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-6 APTGT100DU120TG – Rev 2 October, 2012 Symbol VCES APTGT100DU120TG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES Test Conditions Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current VGE = 0V, VCE = 1200V Tj = 25°C VGE =15V IC = 100A Tj = 125°C VGE = VCE , IC = 2 mA VGE = 20V, VCE = 0V Min Typ 1.4 1.7 2.0 5.8 5.0 Max Unit 250 2.1 µA 6.5 400 V nA Max Unit V Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 100A RG = 3.9 Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 100A RG = 3.9 VGE = ±15V Tj = 125°C VBus = 600V IC = 100A Tj = 125°C RG = 3.9 Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn on Energy Eoff Turn off Energy Min Typ 7200 400 300 260 30 420 pF ns 70 290 50 520 ns 90 10 mJ 10 Reverse diode ratings and characteristics IRM IF Maximum Reverse Leakage Current Test Conditions VR=1200V DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Er Reverse Recovery Energy IF = 100A VGE = 0V IF = 100A VR = 600V di/dt =2000A/µs www.microsemi.com Min 1200 Typ Tj = 25°C Tj = 125°C Tc = 80°C Tj = 25°C Tj = 125°C 100 1.6 1.6 Tj = 25°C 170 Tj = 125°C Tj = 25°C 280 9 Tj = 125°C Tj = 25°C Tj = 125°C 18 5 9 Max 250 500 Unit V µA A 2.1 V ns µC mJ 2-6 APTGT100DU120TG – Rev 2 October, 2012 Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage APTGT100DU120TG Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic Resistance @ 25°C R25 B 25/85 T25 = 298.15 K RT Min Typ 50 3952 Max Unit k K Min Typ Max 0.26 0.48 Unit R25 T: Thermistor temperature 1 1 RT: Thermistor value at T exp B25 / 85 T25 T Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt IGBT Diode Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To Heatsink M5 4000 -40 -40 -40 2.5 °C/W V 150 125 100 4.7 160 °C N.m g See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com www.microsemi.com 3-6 APTGT100DU120TG – Rev 2 October, 2012 SP4 Package outline (dimensions in mm) APTGT100DU120TG Typical Performance Curve Output Characteristics (VGE=15V) 200 TJ=125°C VGE=17V 150 100 VGE=13V VGE=15V IC (A) IC (A) TJ = 125°C TJ=25°C 150 Output Characteristics 200 100 VGE=9V 50 50 0 0 0 1 2 VCE (V) 4 0 Transfert Characteristics 200 175 15 E (mJ) 100 50 TJ=125°C 3 4 Eon Eoff Er 10 75 2 VCE (V) VCE = 600V VGE = 15V RG = 3.9 Ω TJ = 125°C 20 TJ=125°C 125 1 Energy losses vs Collector Current 25 TJ=25°C 150 IC (A) 3 Eon 5 25 0 0 5 6 7 8 9 10 11 0 12 25 50 Switching Energy Losses vs Gate Resistance Eon 200 160 IC (A) E (mJ) 240 VCE = 600V VGE =15V IC = 100A TJ = 125°C 15 100 125 150 175 200 Reverse Bias Safe Operating Area 25 20 75 IC (A) VGE (V) Eoff 10 120 Er 80 5 VGE=15V TJ=125°C RG=3.9 Ω 40 0 0 0 5 10 15 20 Gate Resistance (ohms) 25 0 300 600 900 VCE (V) 1200 1500 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.25 0.9 0.2 0.7 0.15 0.5 0.1 0.3 0.05 IGBT 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 4-6 APTGT100DU120TG – Rev 2 October, 2012 Thermal Impedance (°C/W) 0.3 APTGT100DU120TG Forward Characteristic of diode 200 VCE=600V D=50% RG=3.9 Ω TJ=125°C Tc=75°C 50 ZVS 40 ZCS TJ=25°C 150 IF (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 60 30 TJ=125°C 100 20 50 10 TJ=125°C Hard switching 0 0 0 20 40 60 80 100 120 0 140 0.4 IC (A) 0.8 1.2 1.6 VF (V) 2 2.4 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 0.4 0.3 Diode 0.7 0.5 0.2 0.3 0.1 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 5-6 APTGT100DU120TG – Rev 2 October, 2012 Thermal Impedance (°C/W) 0.5 APTGT100DU120TG DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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