TSD1664 Low Vcesat NPN Transistor SOT-89 SOT-223 PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 32V BVCBO 40V IC 1A VCE(SAT) Features ● ● Ordering Information Low VCE(SAT) 0.15V @ IC / IB = 500mA / 50mA (Typ.) Complementary part with TSB1132 Part No. TSD1664CY RM TSD1664CW RP Structure ● ● 0.15V @ IC / IB = 500mA / 50mA Package Packing TO-92 TO-223 1Kpcs / 7” Reel 2.5Kpcs / 13” Reel Epitaxial Planar Type NPN Silicon Transistor Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Limit Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage Emitter-Base Voltage VCEO VEBO 32 5 V V IC 1 2 (note1) A Collector Current DC Pulse Collector Power Dissipation PD Operating Junction Temperature TJ 0.5 2 (note 2) +150 TSTG - 55 to +150 Operating Junction and Storage Temperature Range Note: 1. Single pulse, Pw=20ms, Duty≤50% 2. When mounted on a 40 x 50 x 0.7mm ceramic board. W o C o C Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Collector-Base Breakdown Voltage IC = 50uA, IE = 0 BVCBO 40 -- -- V Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage IC = 1mA, IB = 0 IE = 50uA, IC = 0 BVCEO BVEBO 32 5 --- --- V V Collector Cutoff Current Emitter Cutoff Current VCB = 20V, IE = 0 VEB = 4V, IC = 0 ICBO IEBO --- --- 0.5 0.5 uA uA Collector-Emitter Saturation Voltage DC Current Transfer Ratio IC / IB = 500mA / 50mA VCE = 3V, IC = 100mA VCE =5V, IC=-50mA, f=100MHz VCB = 10V, IE = 0, f=1MHz VCE(SAT) hFE -82 0.15 -- 0.4 390 V fT 50 150 -- MHz Cob -- 10 20 pF Transition Frequency Output Capacitance hFE values are classified as follows: Rank P Q hFE 82~180 120~270 R 180~390 1/5 Version: A07 TSD1664 Low Vcesat NPN Transistor Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Figure 1. DC Current Gain Figure 2. VCE(SAT) v.s. Ic Figure 3. Transition Frequency v.s. IE Figure 4. Collector Output Capacitance vs. Vcb 2/5 Version: A07 TSD1664 Low Vcesat NPN Transistor SOT-89 Mechanical Drawing DIM A B C D E F G H I J 3/5 SOT-89 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 4.40 4.60 0.173 0.181 1.50 1.7 0.059 0.070 2.30 2.60 0.090 0.102 0.40 0.52 0.016 0.020 1.50 1.50 0.059 0.059 3.00 3.00 0.118 0.118 0.89 1.20 0.035 0.047 4.05 4.25 0.159 0.167 1.4 1.6 0.055 0.068 0.35 0.44 0.014 0.017 Version: A07 TSD1664 Low Vcesat NPN Transistor SOT-223 Mechanical Drawing DIM A B C D E F G H I J K 4/5 SOT-223 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 6.350 6.850 0.250 0.270 2.900 3.100 0.114 0.122 3.450 3.750 0.136 0.148 0.595 0.635 0.023 0.025 4.550 4.650 0.179 0.183 2.250 2.350 0.088 0.093 0.835 1.035 0.032 0.041 6.700 7.300 0.263 0.287 0.250 0.355 0.010 0.014 10 16 10 16 1.550 1.800 0.061 0.071 Version: A07 TSD1664 Low Vcesat NPN Transistor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 5/5 Version: A07