7MBR75VR120-50 IGBT Modules IGBT MODULE (V series) 1200V / 75A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25°C unless otherwise specified) Items Symbols Inverter Collector-Emitter voltage Gate-Emitter voltage Collector current Converter Brake Collector power dissipation Collector-Emitter voltage Gate-Emitter voltage Collector current Collector power dissipation Repetitive peak reverse voltage (Diode) Repetitive peak reverse voltage Average output current Surge current (Non-Repetitive) I2t (Non-Repetitive) Conditions VCES VGES Ic Icp -Ic -Ic pulse Pc VCES VGES IC ICP PC VRRM VRRM IO IFSM I2 t Junction temperature Tj Operating junciton temperature (under switching conditions) Tjop Case temperature Maximum junction temperature Operating temperature (under switching conditions) Storage temperature Tc Tjmax Tjop Tstg Continuous 1ms Tc=80°C Tc=80°C 1ms 1 device Continuous 1ms 1 device Tc=80°C Tc=80°C 50Hz/60Hz, sine wave 10ms, Tj=150°C half sine wave Inverter, Brake Converter Inverter, Brake Converter Isolation voltage between terminal and copper base (*1) Viso between thermistor and others (*2) AC : 1min. Screw torque Mounting (*3) M5 - Maximum ratings 1200 ±20 75 150 75 150 385 1200 ±20 50 100 280 1200 1600 75 520 1352 175 150 150 150 125 175 150 -40 to +125 V V A W V V A W V V A A A2 s °C 2500 VAC 3.5 Nm Note *1: All terminals should be connected together during the test. Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test. Note *3: Recommendable value : 2.5-3.5 Nm (M5) 1 Units 7MBR75VR120-50 IGBT Modules Electrical characteristics (at Tj= 25°C unless otherwise specified) Items Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Symbols Conditions I CES I GES VGE (th) VGE = 0V, VCE = 1200V VGE = 0V, VGE = ±20V VCE = 20V, I C = 75mA VCE (sat) (terminal) VGE = 15V I C = 75A Collector-Emitter saturation voltage Inverter VCE (sat) (chip) Input capacitance Turn-on time Turn-off time Cies ton tr tr (i) toff tf VF (terminal) Tj=25°C Tj=125°C Tj=150°C Tj=25°C VGE = 15V Tj=125°C I C = 75A Tj=150°C VCE = 10V, VGE = 0V, f = 1MHz VCC = 600V I C = 75A VGE = +15 / -15V RG = 2.2Ω Tj=25°C Tj=125°C Tj=150°C Tj=25°C Tj=125°C Tj=150°C I F = 75A Forward on voltage Brake Units mA nA V V nF µs V VF (chip) I F = 75A trr I F = 75A Zero gate voltage collector current I CES VGE = 0V VCE = 1200V - - 1.0 mA Gate-Emitter leakage current I GES VCE = 0V VGE = +20 / -20V - - 200 nA VCE (sat) (terminal) VGE = 15V I C = 50A 465 3305 2.10 2.45 2.50 1.85 2.20 2.25 0.39 0.09 0.53 0.06 1.80 1.40 5000 495 3375 2.55 2.30 1.20 0.60 1.00 0.30 1.00 2.10 1.0 520 3450 Reverse recovery time Collector-Emitter saturation voltage VCE (sat) (chip) Turn-on time Turn-off time Reverse current Thermistor Converter Characteristics min. typ. max. 1.0 200 6.0 6.5 7.0 2.25 2.70 2.60 2.65 1.85 2.30 2.20 2.25 6.0 0.39 1.20 0.09 0.60 0.03 0.53 1.00 0.06 0.30 2.10 2.55 2.25 2.20 1.70 2.15 1.85 1.80 0.1 ton tr toff tf IRRM VGE = 15V I C = 50A Tj=25°C Tj=125°C Tj=150°C Tj=25°C Tj=125°C Tj=150°C VCE = 600V I C = 50A VGE = +15 / -15V RG = 15Ω VR = 1200V terminal chip Forward on voltage VFM (chip) Reverse current IRRM Resistance R B value B VR = 1600V T = 25°C T = 100°C T = 25 / 50°C Symbols Conditions I F = 75A µs V µs mA V mA Ω K Thermal resistance characteristics Items Thermal resistance (1device) Rth(j-c) Contact thermal resistance (1device) (*4) Rth(c-f) Inverter IGBT Inverter FWD Brake IGBT Converter Diode with Thermal Compound Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound. 2 Characteristics min. typ. max. 0.39 0.55 0.54 0.43 0.05 - Units °C/W 7MBR75VR120-50 IGBT Modules Characteristics (Representative) [ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) [ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) Tj= 25oC / chip Tj= 150oC / chip 150 150 15V VGE=20V 12V 125 Collector current: IC [A] Collector current: IC [A] VGE=20V 100 75 10V 50 25 125 75 10V 50 25 8V 8V 0 0 1 2 3 4 5 0 1 2 3 4 5 Collector-Emitter voltage: VCE[V] Collector-Emitter voltage: VCE[V] [ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip [ Inverter ] Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj= 25oC / chip 150 Collector - Emitter voltage: VCE [V] 8 Tj=25°C Collector current: IC [A] 12V 100 0 Tj=150°C 125 100 Tj=125°C 75 50 25 0 6 4 Ic=150A Ic=75A Ic=38A 2 0 0 1 2 3 4 5 5 10 Collector current: IC [A] Collector - Emitter voltage: VCE [200V/div] Gate - Emitter voltage: VGE [5V/div] 100.0 Cies 1.0 Cres Coes 0.1 0.0 0 10 20 20 25 [ Inverter ] Dynamic gate charge (typ.) Vcc=600V, Ic=75A, Tj= 25°C VGE=0V, f= 1MHz, Tj= 25oC 10.0 15 Gate - Emitter voltage: VGE [V] [ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.) Capacitance: Cies, Coes, Cres [nF] 15V 30 VGE VCE 0 Collector - Emitter voltage: VCE [V] 100 200 300 400 500 Gate charge: Qg [nC] 3 600 700 7MBR75VR120-50 IGBT Modules [ Inverter ] Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg=2.2Ω, Tj= 150°C 10000 1000 Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] [ Inverter ] Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg=2.2Ω, Tj= 125°C toff ton tr 100 tf 10 0 25 50 75 100 125 150 10000 1000 ton tf 10 175 0 Switching loss : Eon, Eoff, Err [mJ/pulse ] Switching loss : Eon, Eoff, Err [mJ/pulse ] 10000 toff ton tr 100 tf 10 1.0 10.0 25 50 75 100 125 150 Collector current: IC [A] 100.0 20 Eon(150°C) Eon(125°C) Eoff(150°C) Eoff(125°C) 15 10 Err(150°C) Err(125°C) 5 0 0 25 50 75 100 125 150 175 200 Gate resistance : Rg [Ω] Collector current: IC [A] [ Inverter ] Switching loss vs. gate resistance (typ.) Vcc=600V, Ic=75A, VGE=±15V [ Inverter ] Reverse bias safe operating area (max.) +VGE=15V,-VGE <= 15V, RG >= 2.2Ω ,Tj <= 125°C 14 200 12 Eon(150°C) 10 Eon(125°C) 8 Eoff(150°C) 175 Eoff(125°C) 6 Err(150°C) Err(125°C) 4 2 150 125 100 RBSOA (Repetitive pulse) 75 50 25 0 0 1 175 [ Inverter ] Switching loss vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg=2.2Ω Collector current: IC [A] Switching time : ton, tr, toff, tf [ nsec ] [ Inverter ] Switching time vs. gate resistance (typ.) Vcc=600V, Ic=75A, VGE=±15V, Tj= 125°C 0.1 tr 100 Collector current: IC [A] 1000 toff 10 0 100 400 800 1200 Collector-Emitter voltage : VCE [V] Gate resistance : Rg [Ω] 4 7MBR75VR120-50 IGBT Modules [ Inverter ] Forward current vs. forward on voltage (typ.) chip Tj=25°C 125 100 75 Tj=150°C Tj=125°C 50 25 0 0 1 2 1000 Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] Forward current : IF [A] 150 [ Inverter ] Reverse recovery characteristics (typ.) Vcc=600V, VGE=±15V, Rg=2.2Ω 3 4 trr(150°C) trr(125°C) Irr(150°C) Irr(125°C) 100 10 5 0 50 Forward on voltage : VF [V] 100 150 200 Forward current : IF [A] [ Converter ] Forward current vs. forward on voltage (typ.) chip Forward current : IF [A] 150 Tj=25°C Tj=125° C 125 100 75 50 25 0 0 1 2 3 4 Forward on voltage : VFM [V] [ Thermistor ] Temperature characteristic (typ.) 10.00 100 1.00 Resistance : R [kΩ] Thermal resistanse : Rth(j-c) [ °C/W ] Transient thermal resistance (max.) FWD[Inverter] IGBT[Brake] Conv. Diode IGBT[Inverter] 0.10 0.01 0.001 0.010 0.100 10 1 0.1 1.000 -60 Pulse width : Pw [sec] -40 -20 0 20 40 60 80 100 120 140 160 180 Temperature [°C ] 5 7MBR75VR120-50 [ Brake ] Collector current vs. Collector-Emitter voltage (typ.) [ Brake ] Collector current vs. Collector-Emitter voltage (typ.) Tj= 25oC / chip o Tj= 150 C / chip 100 VGE=20V 15V VGE=20V 12V Collector current: IC [A] 100 Collector current: IC [A] IGBT Modules 75 50 10V 25 15V 75 12V 50 10V 25 8V 8V 0 0 0 1 2 3 4 5 0 Collector-Emitter voltage: VCE[V] 4 5 Tj= 25oC / chip 8 Tj=25°C Collector - Emitter voltage: VCE [V] Collector current: IC [A] 3 [ Brake ] Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj=150°C 75 Tj=125°C 50 25 0 6 4 Ic=100A Ic=50A Ic=25A 2 0 0 1 2 3 4 5 5 10 Collector-Emitter voltage: VCE[V] Collector - Emitter voltage: VCE [200V/div] Gate - Emitter voltage: VGE [5V/div] 10.0 Cies 1.0 Cres Coes 0.1 10 20 20 25 [ Brake ] Dynamic gate charge (typ.) Vcc=600V, Ic=75A, Tj= 25°C VGE=0V, f= 1MHz, Tj= 25oC 0 15 Gate - Emitter voltage: VGE [V] [ Brake ] Capacitance vs. Collector-Emitter voltage (typ.) Capacitance: Cies, Coes, Cres [nF] 2 Collector-Emitter voltage: VCE[V] [ Brake ] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip 100 1 30 VGE VCE 0 Collector - Emitter voltage: VCE [V] 100 200 300 400 Gate charge: Qg [nC] 6 500 600 7MBR75VR120-50 IGBT Modules Outline Drawings, mm ( shows theoretical dimension. ) shows reference dimension. Section A-A Equivalent Circuit Schematic [ Converter ] [ Brake] [ Inverter ] 7 [ Thermistor ] 7MBR75VR120-50 IGBT Modules WARNING 1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of October 2008. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sure to obtain the latest specifications. 2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Device Technology Co., Ltd. is (or shall be deemed) granted. Fuji Electric Device Technology Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3. Although Fuji Electric Device Technology Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design fail-safe, flame retardant, and free of malfunction. 4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements. • Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment • Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc. 5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Device Technology Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty. • Transportation equipment (mounted on cars and ships) • Trunk communications equipment • Traffic-signal control equipment • Gas leakage detectors with an auto-shut-off feature • Emergency equipment for responding to disasters and anti-burglary devices • Safety devices • Medical equipment 6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation). • Space equipment • Aeronautic equipment • Nuclear control equipment • Submarine repeater equipment 7. Copyright ©1996-2008 by Fuji Electric Device Technology Co., Ltd. All rights reserved. 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