600V 94A APT94N60L2C3 APT94N60L2C3G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Super Junction MOSFET • Ultra Low RDS(ON) TO-264 • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Extreme dv/dt Rated D • Dual die (parallel) G • Popular T-MAX Package S Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with two parallel MOSFET die. It is intended for switch-mode operation. It is not suitable for linear mode operation. All Ratings per die: TC = 25°C unless otherwise specified. MAXIMUM RATINGS Symbol VDSS ID Parameter APT94N60L2C3(G) UNIT Drain-Source Voltage 600 Volts Continuous Drain Current @ TC = 25°C 94 1 Amps 282 IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±20 Gate-Source Voltage Transient ±30 Total Power Dissipation @ TC = 25°C 833 Watts Linear Derating Factor 6.67 W/°C VGSM PD TJ,TSTG TL dv /dt Operating and Storage Junction Temperature Range Volts -55 to 150 °C Lead Temperature: 0.063" from Case for 10 Sec. 300 Drain-Source Voltage slope (VDS = 480V, ID = 94A, TJ = 125°C) 50 V/ns Amps IAR Repetitive Avalanche Current 7 20 EAR Repetitive Avalanche Energy 7 1 EAS Single Pulse Avalanche Energy mJ 1800 4 STATIC ELECTRICAL CHARACTERISTICS BV(DSS) Drain-Source Breakdown Voltage (VGS = 0V, ID = 500μA) RDS(on) Drain-Source On-State Resistance IDSS IGSS VGS(th) MIN 2 TYP MAX 600 (VGS = 10V, ID = 60A) Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V) UNIT Volts 0.03 0.035 1.0 50 Ohms μA Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V, TC = 150°C) 500 Gate-Source Leakage Current (VGS = ±20V, VDS = 0V) ±200 nA 3.9 Volts Gate Threshold Voltage (VDS = VGS, ID = 5.4mA) 2.10 3 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. "COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG." Microsemi Website - http://www.microsemi.com 3-2012 Characteristic / Test Conditions 050-7148 Rev E Symbol APT94N60L2C3(G) DYNAMIC CHARACTERISTICS Symbol Characteristic Test Conditions Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge 5 Qgs Gate-Source Charge Qgd Gate-Drain ("Miller ") Charge td(on) Turn-on Delay Time tr 4400 Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy 6 505 pF 640 48 nC 240 18 27 110 165 8 12 ns 2040 INDUCTIVE SWITCHING @ 25°C VDD = 400V, VGS = 15V ID = 94A, RG = 5Ω 6 UNIT 290 INDUCTIVE SWITCHING VGS = 13V VDD = 380V ID = 94A @ 125°C RG = 0.9Ω Fall Time MAX 13600 VGS = 10V VDD = 300V ID = 94A @ 25°C Turn-off Delay Time tf TYP VGS = 0V VDS = 25V f = 1 MHz Rise Time td(off) MIN 3515 μJ 2920 INDUCTIVE SWITCHING @ 125°C VDD = 400V, VGS = 15V ID =94A, RG = 5Ω 3970 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX IS Continuous Source Current (Body Diode) 94 ISM Pulsed Source Current 282 VSD Diode Forward Voltage 2 (Body Diode) 4 (VGS = 0V, IS = -94A) 1 UNIT Amps 1.2 Volts 6 V/ns /dt Peak Diode Recovery /dt t rr Reverse Recovery Time (IS = -94A, di/dt = 100A/μs) 861 ns Q rr Reverse Recovery Charge (IS = -94A, di/dt = 100A/μs) 46 μC dv dv 7 THERMAL CHARACTERISTICS Symbol Characteristic RθJC Junction to Case RθJA Junction to Ambient MIN TYP MAX UNIT 0.15 °C/W 62 1 Continuous current limited by package lead temperature. 4 Pulse Test: Pulse width < 380 μs, Duty Cycle < 2% 2 Repetitive Rating: Pulse width limited by maximum junction temperature 5 See MIL-STD-750 Method 3471 3 Repetitive avalanche causes additional power losses that can be calculated as 6 Eon includes diode reverse recovery. PAV = EAR*f . Pulse width tp limited by Tj max. 7 Maximum 125°C diode commutation speed = di/dt 600A/μs Microsemi reserves the right to change, without notice, the specifications and information contained herein. D = 0.9 0.14 0.12 0.7 0.10 0.5 0.08 Note: 0.06 P DM ZθJC, THERMAL IMPEDANCE (°C/W) 050-7148 Rev E 3-2012 0.16 0.3 0.04 t1 t2 t Duty Factor D = 1 /t2 Peak T J = P DM x Z θJC + T C 0.1 0.02 SINGLE PULSE 0.05 0 10-5 10-4 10-3 10-2 RECTANGULAR PULSE DURATION (SECONDS) Figure 1, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 0.1 APT94N60L2C3(G) Typical Performance Curves 250 10 &15V 160 6.5V VDS> ID (ON) x RDS (ON)MAX. 250μSEC. PULSE TEST @ <0.5 % DUTY CYCLE 140 6V 150 5.5V 100 5V 50 120 ID, DRAIN CURRENT (A) 100 80 60 40 TJ= 25°C 4.5V 20 4V 0 0 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 2, Low Voltage Output Characteristics 1.4 GS ID, DRAIN CURRENT (A) VGS = 10V IDR, REVERSE VGS = 20V 1 3 4 5 6 7 8 80 70 60 50 40 30 20 0.9 10 0.8 0 40 80 120 160 25 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 1. 1 .05 1 .95 -50 0 50 100 50 75 100 125 150 TC, CASE TEMPERATURE (C°) FIGURE 5, Maximum Drain Current vs Case Temperature 3.0 .15 0. 0 200 ID, DRAIN CURRENT (A) FIGURE 4, RDS(ON) vs Drain Current BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) 2 90 = 10V @ 47A 1.2 2.5 2.0 1.5 1 0.5 0 150 -50 TJ, Junction Temperature (°C) FIGURE 6, Breakdown Voltage vs Temperature 0 50 100 150 TJ, JUNCTION TEMPERATURE (C°) FIGURE 7, On-Resistance vs Temperature 800 1.2 1.1 ID, DRAIN CURRENT (A) VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) 1 VGS, GATE-TO-SOURCE VOLTAGE (V) FIGURE 3, Transfer Characteristics 1.3 1.1 0 100 NORMALIZED TO V TJ= -55°C TJ= 125°C 100 1 0.9 0.8 0.7 0.6 10μs 100μs 1ms 10 10ms 100ms DC line 1 -50 0 50 100 150 TC, Case Temperature (°C) FIGURE 8, Threshold Voltage vs Temperature 1 10 100 800 VDS, DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 9, Maximum Safe Operating Area 050-8069 Rev E 3-2012 IC, DRAIN CURRENT (A) 200 APT94N60L2C3(G) Typical Performance Curves 12 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 60,000 Ciss C, CAPACITANCE (pF) 10,000 1,000 Coss Crss 100 10 0 100 200 300 400 500 600 td(on) and td(off) (ns) IDR, REVERSE DRAIN CURRENT (A) VDS= 130V 8 VDS= 325V TJ = =25°C 10 4 2 0 td(off) 500 V DD 400 R G = 400V = 4.3 Ω T = 125°C J L = 100μH 300 200 100 0 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (V) FIGURE 12, Source-Drain Diode Forward Voltage DD 50 G DD R T = 125°C J L = 100μH tf 50 00 tr 50 80 120 160 10000 G = 400V = 4.3Ω T = 125°C J Eoff L = 100μH EON includes 8000 diode reverse recovery. 6000 4000 Eon 2000 0 40 80 120 160 ID (A) FIGURE 14 , Rise and Fall Times vs Current 18000 V DD = 400V 16000 I = 94A 14000 T = 125°C J L = 100μH D Eoff EON includes 12000 diode reverse recovery. 10000 8000 6000 Eon 4000 2000 0 40 V = 4.3Ω 00 0 0 12000 = 400V SWITCHING ENERGY (μJ) R td(on) ID (A) FIGURE 13, Delay Times vs Current 00 V VDS= 520V 6 600 TJ= +150°C 1 tr, and tf (ns) 10 200 400 600 800 Qg, TOTAL GATE CHARGE (nC) FIGURE 11, Gate Charges vs Gate-To-Source Voltage 700 100 SWITCHING ENERGY (uJ) D 0 VDS, DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 10, Capacitance vs Drain-To-Source Voltage 050-8069 Rev E 3-2012 I = 94A 0 10 20 30 40 50 RG, GATE RESISTANCE (Ohms) FIGURE 16, Switching Energy vs Gate Resistance 0 0 25 50 75 100 125 150 ID (A) FIGURE 15, Switching Energy vs Current APT94N60L2C3(G) Typical Performance Curves Gate Voltage 10% T 90% Gate Voltage TJ = 125 C TJ = 125 C td(on) td(off) tr Collector Current Collector Current tf 90% 90% 5% 5% 10% Collector Voltage 0 10% Collector Voltage Switching Energy Switching Energy Figure 18, Turn-off Switching Waveforms and Definitions Figure 17, Turn-on Switching Waveforms and Definitions 75DQ60 APT30DF60 IC V CE G D.U.T. Figure 19,20, Inductive Switching Test Circuit Figure Inductive Switching Test Circuit TO-264 (L) Package Outline e3 100% Sn Plated 4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 19.51 (.768) 20.50 (.807) 3.10 (.122) 3.48 (.137) 5.79 (.228) 6.20 (.244) Drai n 25.48 (1.003) 26.49 (1.043) 2.29 (.090) 2.69 (.106) 19.81 (.780) 21.39 (.842) 0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118) 0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) 2.29 (.090) 2.69 (.106) Gate Drain Source 050-8069 Rev E 3-2012 V DD