LX5506E ® TM InGaP HBT 4 – 6 GHz Power Amplifier P RODUCTION D ATA S HEET It operates with a single positive voltage supply of 3.3V (nominal), with +26dBm of P1dB and up to 23dB power gain in the 5.15 - 5.85GHz frequency range with a simple output matching capacitor pair. LX5506E is available in a 16-pin 3mmx3mm micro-lead package (MLP). The compact footprint, low profile, and excellent thermal capability of the MLP package makes the LX5506E an ideal solution for broadband, high-gain power amplifier requirements for IEEE 802.11a, and Hiperlan2 portable WLAN applications. Advanced InGaP HBT Single-Polarity Voltage Supply EVM ~ 2.5% at Pout=18dBm for 64QAM/ 54Mbps OFDM (3.3V) Power Gain ~ 23dB at 5.25GHz & Pout=18dBm Power Gain ~ 20dB at 5.85GHz & Pout=18dBm P1dB ~ +26dBm across 5.15 – 5.85 GHz Total Current ~ 200mA for Pout=18dBm at 5.25GHz ACPR ~ -48dBc at 30MHz Offset at Pout=18dBm Integrated Power Detectors Complete On-Chip Input Match Simple Output Capacitor Match Small Footprint: 3x3mm2 Low Profile: 0.9mm bs ol et e The LX5506E is a power amplifier optimized for the FCC Unlicensed National Information Infrastructure (U-NII) band, HyperLAN2 and Japan WLAN applications in the 4.9-5.85 GHz frequency range. The PA is implemented as a three-stage monolithic microwave integrated circuit (MMIC) with active bias, onchip input matching and output prematching. It also features a pair of onchip differential output power detectors to help reduce BOM cost and PCB board space for system implementations. The device is manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) IC process (MOCVD). WWW . Microsemi .C OM KEY FEATURES DESCRIPTION IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com APPLICATIONS FCC U-N11 Wireless IEEE 802.11a HiperLAN2 LQ LX5506E O PRODUCT HIGHLIGHT PACKAGE ORDER INFO Plastic MLPQ 16-Pin Ro HS Compliant / Pb-free Transition D/C: 0418 LX5506ELQ Note: Available in Tape & Reel. Append the letters “TR” to the part number. (i.e. LX5506ELQ-TR) This device is classified as ESD Level 0 in accordance with JESD22-A114-B, (HBM) testing. Appropriate ESD procedures should be observed when handling this device. Copyright © 2000 Rev. 1.3c, 2005-03-02 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 1 LX5506E ® TM InGaP HBT 4 – 6 GHz Power Amplifier P RODUCTION D ATA S HEET ABSOLUTE MAXIMUM RATINGS PACKAGE PIN OUT WWW . Microsemi .C OM bs ol et e DC Supply Voltage, RF Off...............................................................................6V Collector Current ........................................................................................600mA Total Power Dissipation....................................................................................3W RF Input Power........................................................................................... 15dBm Thermal Resistance (Junction-to-Case, θJC).................................................6°C/W Maximum Junction Temperature (TJ max) .................................................. 150°C Operation Ambient Temperature .......................................................-40 to +85°C Storage Temperature.......................................................................... -65 to 150°C Peak Temperature for solder Reflow (40 second max)................... 260°C (+0, -5) Note: Exceeding these ratings could cause damage to the device. All voltages are with respect to Ground. Currents are positive into, negative out of specified terminal. X LQ PACKAGE (Bottom View) RoHS / Pb-free 100% Matte Tin Lead Finish FUNCTIONAL PIN DESCRIPTION Name RF IN Pin # 2, 3 Description RF input for the power amplifier. This pin is DC-shorted to GND but AC-coupled to the transistor base of the first stage. 4 Supply voltage for the bias reference and control circuits. This pin can be combined with VC1, VC2 and VC3 pins, resulting in a single supply voltage (referred to as Vc). 5 6 7 Bias control voltage for the first stage. Bias control voltage for the second stage. Bias control voltage for the third stage. DET REF 9 8 Detector output voltage for the third stage PA output power. Detector output voltage for the reference power detector. RF OUT 10, 11 VC1 VC2 VC3 16 15 14 GND Center Metal The center metal base of the MLP package provides both DC/RF ground as well as heat sink for the power amplifier. NC 1,12,13 These pins are unused and not connected to the device inside the package. They can be treated either as open pins, or connected to ground metal. VCC O VB1 VB2 VB3 PACKAGE DATA Copyright © 2000 Rev. 1.3c, 2005-03-02 RF output for the power amplifier. This pin is DC-blocked from the collector of the output stage. DC supply voltage for the first stage amplifier. DC supply voltage for the second stage amplifier. DC supply voltage for the third stage amplifier. Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 2 LX5506E ® TM InGaP HBT 4 – 6 GHz Power Amplifier P RODUCTION D ATA S HEET PARAMETER CONDITION SYMBOL MIN. f 5.15 Pout 25 Frequency Range Output Power at 1dB Compression Power Gain at Pout=18dBm MIN. 5.35 5.7 TYP. MAX. UNIT 5.85 25 GHz 26 dBm dB 23 20 2.5 3 % Ic_total 200 210 mA Icq 105 105 mA Iref 2.3 2.3 mA dB 64QAM/54Mbps bs ol et e Total Current at Pout=18dBm MAX. 26 Gp EVM at Pout=18dBm Quiescent Current Bias Control Reference Current For Icq=105mA Small-Signal Gain Gain Flatness Over 200MHz Gain Variation Over Temperature -20 to +85 C o Input Return Loss Output Return Loss Reverse Isolation S21 22 19 ∆S21 +/-0.5 +/-0.5 dB ∆S21 S11 +/-2 +/-1 dB -12 -10 dB S22 -7 -10 dB S12 Second Harmonic Pout = 18dBm Third Harmonic Pout = 18dBm Detector Response Pout = 18dBm Ramp-On Time 10~90% dB dBc dBc -40 2 3 V tON 100 100 ns EVM & CURRENT VS. POUT EVM Ictotal 10 EVM Ictotal 9 240 300 280 8 260 7 240 6 220 5 200 4 180 3 160 2 140 220 180 3 160 2 140 1 120 10 11 12 13 14 15 16 17 18 19 20 21 1 Pout(dBm) Typical EVM and Total Current vs. POUT @ 5.15GHz (VC = 3.3V, FREV = 2.9V, ICQ = 105mA, Freq= 5.15GHz, 64QAM / 54MBps) 120 10 11 12 13 14 15 16 17 18 19 20 21 Pout(dBm) Typical EVM and Total Current vs. POUT @ 5.85GHz (VC = 3.3V, VREF = 2.9V, ICQ = 105mA, Freq = 5.85GHz, 64QAM / 54Mbps Notes: All EVM data are for OFDM signal of 64QAM/54Mbps from Yokogawa VG6000, and are actual measured data without any de-embedding. Source EVM is 1.4 - 1.8% for input power levels for test. Copyright © 2000 Rev. 1.3c, 2005-03-02 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 3 ELECTRICALS O 4 Ictotal(mA) 200 Ictotal(mA) 5 EVM(%) 6 -40 -40 -40 260 7 -40 -40 DET EVM & CURRENT VS POUT 8 EVM(%) TYP. WWW . Microsemi .C OM ELECTRICAL CHARACTERISTICS Unless otherwise specified, the following specifications apply over following test conditions:. Vc = 3.3V, Vref = 2.9V, Icq = 105mA, TA = 25°C LX5506E ® TM InGaP HBT 4 – 6 GHz Power Amplifier P RODUCTION D ATA S HEET EVM & CURRENT VS FREQUENCY EVM_Undeembedded Ictotal 205 3 195 2.5 190 2 185 1.5 5.1 -40 -41 -42 -43 -44 -45 -46 -47 -48 -49 -50 -51 -52 -53 -54 -55 Freq.=5.15GHz Freq.=5.85GHz bs ol et e 200 Ictotal(mA) 3.5 ACPR@30MHz Offset 4 EVM(%) TYPICAL ACPR VS POUT 210 5.2 5.3 5.4 5.5 5.6 5.7 5.8 180 5.9 WWW . Microsemi .C OM 4.5 10 11 12 13 14 15 Frequency (GHz) 16 17 18 19 20 21 Pout (dBm) Typical EVM and Total Current vs. Frequency Typical ACPR vs POUT (VC = 3.3V, FREV = 2.9V, ICQ = 105mA, POUT = 18dBm, 64QAM / 54MBps) (VC = 3.3V, VREF = 2.9V, ICQ = 105mA, 64QAM / 54Mbps, 30MHz Offset) TYPICAL POWER SWEEP @ 5.25GHZ POWER DETECTOR RESPONSE Typical Power Sweep Data @ 5.25GHz Typical Power Detector Response (VC = 3.3V, FREV = 2.9V, ICQ = 105mA, Freq = 5.25GHz, CW Input) (VC = 3.3V, VREF = 2.9V, ICQ = 105mA, Freq = 5.25GHz, 64QAM / 54Mbps) SMALL SIGNAL GAIN OVER TEMP 25 20 15 10 5 0 -5 -10 -15 -20 -25 -30 -35 -40 -45 -50 25 S21 (dB) 24 23 22 21 20 19 +85oC +25oC 0oC -20oC -40oC 18 17 5.0 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 6.0 Typical S Parameter Data at Room Temperature (VC = 3.3V, FREV = 2.9V, ICQ = 105mA) Copyright © 2000 Rev. 1.3c, 2005-03-02 16 15 5.15 freq, GHz CHARTS dB(S(2,2)) dB(S(2,1)) dB(S(1,2)) dB(S(1,1)) O S PARAMETER 5.25 5.35 5.45 5.55 5.65 5.75 5.85 Freq (GHz) Typical Small Signal Gain Variation Over Temperature (VC = 3.3V, VREF = 2.9V, ICQ = 105mA at Room Temperature) Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 4 LX5506E ® TM InGaP HBT 4 – 6 GHz Power Amplifier P RODUCTION D ATA S HEET PACKAGE DIMENSIONS 16-Pin MLPQ 3x3 (75 x 75 mil DAP) D b A A1 A3 b D E e D2 E2 K L D2 E2 e A1 Dim MILLIMETERS MIN MAX 0.80 1.00 0 0.05 0.20 REF 0.18 0.30 3.00 BSC 3.00 BSC 0.50 BSC 1.55 1.80 1.55 1.80 0.2 0.35 0.50 INCHES MIN MAX 0.031 0.039 0 0.002 0.008 REF 0.007 0.012 0.118 BSC 0.118 BSC 0.020 BSC 0.061 0.071 0.061 0.071 0.008 0.012 0.020 bs ol et e E WWW . Microsemi .C OM LQ K L A Note: A3 Copyright © 2000 Rev. 1.3c, 2005-03-02 MECHANICALS O 1. Dimensions do not include mold flash or protrusions; these shall not exceed 0.155mm(.006”) on any side. Lead dimension shall not include solder coverage. Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 5 LX5506E ® TM InGaP HBT 4 – 6 GHz Power Amplifier P RODUCTION D ATA S HEET NOTES O bs ol et e WWW . Microsemi .C OM NOTES PRODUCTION DATA – Information contained in this document is proprietary to Microsemi and is current as of publication date. This document may not be modified in any way without the express written consent of Microsemi. Product processing does not necessarily include testing of all parameters. Microsemi reserves the right to change the configuration and performance of the product and to discontinue product at any time. Copyright © 2000 Rev. 1.3c, 2005-03-02 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 6