CY7C1019CV33 1-Mbit (128 K × 8) Static RAM Datasheet.pdf

CY7C1019CV33
1-Mbit (128 K × 8) Static RAM
1-Mbit (128 K × 8) Static RAM
Features
Functional Description
■
Temperature Ranges
❐ Industrial: –40 °C to 85 °C
❐ Automotive-A: –40 °C to 85 °C
■
Pin and Function compatible with CY7C1019BV33
■
High Speed
❐ tAA = 10 ns
■
CMOS for optimum Speed and Power
■
Data Retention at 2.0 V
■
Center Power/Ground Pinout
■
Automatic Power Down when deselected
■
Easy Memory Expansion with CE and OE Options
■
Available in Pb-free 32-pin TSOP II package
The CY7C1019CV33 is a high performance CMOS static RAM
organized as 131,072 words by 8 bits. Easy memory expansion
is provided by an active LOW Chip Enable (CE), an active LOW
Output Enable (OE), and tristate drivers. This device has an
automatic power down feature that significantly reduces power
consumption when deselected.
Writing to the device is accomplished by taking Chip Enable (CE)
and Write Enable (WE) inputs LOW. Data on the eight I/O pins
(I/O0 through I/O7) is then written into the location specified on
the address pins (A0 through A16).
Reading from the device is accomplished by taking Chip Enable
(CE) and Output Enable (OE) LOW while forcing Write Enable
(WE) HIGH. Under these conditions, the contents of the memory
location specified by the address pins will appear on the I/O pins.
The eight input/output pins (I/O0 through I/O7) are placed in a
high impedance state when the device is deselected (CE HIGH),
the outputs are disabled (OE HIGH), or during a write operation
(CE LOW, and WE LOW).
For a complete list of related documentation, click here.
Logic Block Diagram
I/O
0
INPUT BUFFER
I/O
1
I/O
2
SENSE AMPS
ROW DECODER
A0
A1
A2
A3
A4
A5
A6
A7
A8
128K x 8
ARRAY
I/O
3
I/O
4
I/O
5
COLUMN
DECODER
CE
I/O
6
POWER
DOWN
I/O
WE
A9
A 10
A 11
A 12
A 13
A 14
A 15
A 16
7
OE
Cypress Semiconductor Corporation
Document Number: 38-05130 Rev. *O
•
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised November 17, 2015
CY7C1019CV33
Contents
Selection Guide ................................................................ 3
Pin Configuration ............................................................. 3
Maximum Ratings ............................................................. 4
Operating Range ............................................................... 4
Electrical Characteristics ................................................. 4
Capacitance ...................................................................... 5
Thermal Resistance .......................................................... 5
AC Test Loads and Waveforms ....................................... 5
Switching Characteristics ................................................ 6
Switching Waveforms ...................................................... 7
Truth Table ........................................................................ 9
Ordering Information ........................................................ 9
Ordering Code Definitions ........................................... 9
Document Number: 38-05130 Rev. *O
Package Diagram ............................................................ 10
Acronyms ........................................................................ 11
Document Conventions ................................................. 11
Units of Measure ....................................................... 11
Document History Page ................................................. 12
Sales, Solutions, and Legal Information ...................... 14
Worldwide Sales and Design Support ....................... 14
Products .................................................................... 14
PSoC® Solutions ...................................................... 14
Cypress Developer Community ................................. 14
Technical Support ..................................................... 14
Page 2 of 14
CY7C1019CV33
Selection Guide
-10 (Industrial/
Automotive-A)
Unit
Maximum Access Time
10
ns
Maximum Operating Current
80
mA
Maximum Standby Current
5
mA
Description
Pin Configuration
Figure 1. 32-pin TSOP II pinout (Top View) [1]
A0
A1
A2
A3
CE
I/O0
I/O1
VCC
V SS
I/O2
I/O3
WE
A4
A5
A6
A7
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A16
A15
A14
A13
OE
I/O7
I/O6
VSS
VCC
I/O5
I/O4
A12
A11
A10
A9
A8
Note
1. NC pins are not connected on the die.
Document Number: 38-05130 Rev. *O
Page 3 of 14
CY7C1019CV33
Maximum Ratings
Current into Outputs (LOW) ........................................ 20 mA
Static Discharge Voltage
(per MIL-STD-883, Method 3015) ........................... >2001 V
Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Latch up Current ..................................................... >200 mA
Storage Temperature ............................... –65 °C to +150 °C
Operating Range
Ambient Temperature
with Power Applied .................................. –55 °C to +125 °C
Range
Supply Voltage
on VCC to Relative GND [2] ..........................–0.5 V to +4.6 V
Ambient Temperature
VCC
0 °C to +70 °C
3.3 V  10%
Industrial
–40 C to +85 C
3.3 V  10%
Automotive-A
–40 C to +85 C
3.3 V  10%
Commercial
DC Voltage Applied to Outputs
in High Z State [2] ................................ –0.5 V to VCC + 0.5 V
DC Input Voltage [2] ............................ –0.5 V to VCC + 0.5 V
Electrical Characteristics
Over the Operating Range
Parameter
Description
Test Conditions
-10 (Industrial/Auto-A)
Unit
Min
Max
2.4
–
V
–
0.4
V
VOH
Output HIGH Voltage
VCC = Min, IOH = –4.0 mA
VOL
Output LOW Voltage
VCC = Min, IOL = 8.0 mA
VIH
Input HIGH Voltage
2.0
VCC + 0.3
V
VIL
Input LOW Voltage[2]
–0.3
0.8
V
IIX
Input Leakage Current
GND < VI < VCC
–1
+1
A
IOZ
Output Leakage Current
GND < VI < VCC, Output Disabled
–1
+1
A
ICC
VCC Operating Supply Current
VCC = Max, IOUT = 0 mA, f = fMAX = 1/tRC
–
80
mA
ISB1
Automatic CE Power down
Current – TTL Inputs
Max VCC, CE > VIH,
VIN > VIH or VIN < VIL, f = fMAX
–
15
mA
ISB2
Automatic CE Power down
Current – CMOS Inputs
Max VCC, CE > VCC – 0.3 V,
VIN > VCC – 0.3 V, or VIN < 0.3 V, f = 0
–
5
mA
Note
2. VIL (min.) = –2.0 V for pulse durations of less than 20 ns.
Document Number: 38-05130 Rev. *O
Page 4 of 14
CY7C1019CV33
Capacitance
Parameter [3]
Description
CIN
Input capacitance
COUT
Output capacitance
Test Conditions
TA = 25 °C, f = 1 MHz, VCC = 5.0 V
Max
Unit
8
pF
8
pF
Thermal Resistance
Parameter [3]
Description
JA
Thermal resistance
(junction to ambient)
JC
Thermal resistance
(junction to case)
Test Conditions
32-pin TSOP II Unit
Still air, soldered on a 3 × 4.5 inch, four-layer printed circuit
board
68.61
C/W
20.59
C/W
AC Test Loads and Waveforms
Figure 2. AC Test Loads and Waveforms [4]
R 317
3.3 V
3.0 V
OUTPUT
R2 GND
351
30 pF
(a)
Rise Time: 1 V/ns
High-Z characteristics:
ALL INPUT PULSES
90%
90%
10%
10%
R 317
3.3 V
OUTPUT
R2
351 
5 pF
(b)
Fall Time: 1 V/ns
(c)
Notes
3. Tested initially and after any design or process changes that may affect these parameters.
4. AC characteristics (except High Z) for all speeds are tested using the Thevenin load shown in section (a) in Figure 2. High Z characteristics are tested for all speeds
using the test load shown in section (c) in Figure 2.
Document Number: 38-05130 Rev. *O
Page 5 of 14
CY7C1019CV33
Switching Characteristics
Over the Operating Range
Parameter [5]
Description
-10 (Industrial/
Automotive-A)
Min
Unit
Max
Read Cycle
tRC
Read Cycle Time
10
–
ns
tAA
Address to Data Valid
–
10
ns
tOHA
Data Hold from Address Change
3
–
ns
tACE
CE LOW to Data Valid
–
10
ns
tDOE
OE LOW to Data Valid
–
5
ns
0
–
ns
–
5
ns
3
–
ns
tLZOE
tHZOE
tLZCE
tHZCE
tPU[8]
tPD
[8]
Write Cycle
OE LOW to Low Z
[6]
OE HIGH to High Z
CE LOW to Low Z
[6, 7]
[6]
CE HIGH to High Z
[6, 7]
–
5
ns
CE LOW to Power Up
0
–
ns
CE HIGH to Power Down
–
10
ns
[9, 10]
tWC
Write Cycle Time
10
–
ns
tSCE
CE LOW to Write End
8
–
ns
tAW
Address Setup to Write End
8
–
ns
tHA
Address Hold from Write End
0
–
ns
tSA
Address Setup to Write Start
0
–
ns
tPWE
WE Pulse Width
7
–
ns
tSD
Data Setup to Write End
5
–
ns
tHD
Data Hold from Write End
tLZWE
tHZWE
0
–
ns
WE HIGH to Low Z
[6]
3
–
ns
WE LOW to High Z
[6, 7]
–
5
ns
Notes
5. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5 V, input pulse levels of 0 to 3.0 V.
6. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device.
7. tHZOE, tHZCE, and tHZWE are specified with a load capacitance of 5 pF as in part (d) of Figure 2 on page 5. Transition is measured 500 mV from steady-state voltage.
8. This parameter is guaranteed by design and is not tested.
9. The internal write time of the memory is defined by the overlap of CE LOW and WE LOW. CE and WE must be LOW to initiate a write, and the transition of any of
these signals can terminate the write. The input data setup and hold timing should be referenced to the leading edge of the signal that terminates the write.
10. The minimum write cycle time for Write Cycle No. 3 (WE Controlled, OE LOW) should be equal to the sum of tHZWE and tSD.
Document Number: 38-05130 Rev. *O
Page 6 of 14
CY7C1019CV33
Switching Waveforms
Figure 3. Read Cycle No. 1 [11, 12]
tRC
ADDRESS
tOHA
DATA OUT
tAA
PREVIOUS DATA VALID
DATA VALID
Figure 4. Read Cycle No. 2 (OE Controlled) [12, 13]
ADDRESS
tRC
CE
tACE
OE
tHZOE
tDOE
DATA OUT
tHZCE
tLZOE
HIGH IMPEDANCE
DATA VALID
tLZCE
VCC
SUPPLY
CURRENT
HIGH
IMPEDANCE
tPD
tPU
ICC
50%
50%
ISB
Figure 5. Write Cycle No. 1 (CE Controlled) [14, 15]
tWC
ADDRESS
tSCE
CE
tSA
tSCE
tAW
tHA
tPWE
WE
tSD
DATA I/O
tHD
DATA VALID
Notes
11. Device is continuously selected. OE, CE = VIL.
12. WE is HIGH for read cycle.
13. Address valid prior to or coincident with CE transition LOW.
14. Data I/O is high impedance if OE = VIH.
15. If CE goes HIGH simultaneously with WE going HIGH, the output remains in a high impedance state.
Document Number: 38-05130 Rev. *O
Page 7 of 14
CY7C1019CV33
Switching Waveforms (continued)
Figure 6. Write Cycle No. 2 (WE Controlled, OE HIGH During Write) [16, 17]
tWC
ADDRESS
tSCE
CE
tAW
tHA
tSA
tPWE
WE
OE
tSD
DATA I/O
tHD
DATAIN VALID
NOTE 19
tHZOE
Figure 7. Write Cycle No. 3 (WE Controlled, OE LOW) [17, 18]
tWC
ADDRESS
tSCE
CE
tAW
tSA
tHA
tPWE
WE
tSD
DATA I/O
NOTE 19
tHD
DATA VALID
tHZWE
tLZWE
Notes
16. Data I/O is high impedance if OE = VIH.
17. If CE goes HIGH simultaneously with WE going HIGH, the output remains in a high impedance state.
18. The minimum write cycle pulse width should be equal to the sum of tSD and tHZWE.
19. During this period the I/Os are in the output state and input signals should not be applied.
Document Number: 38-05130 Rev. *O
Page 8 of 14
CY7C1019CV33
Truth Table
I/O0–I/O7
Mode
Power
CE
OE
WE
H
X
X
High Z
Power Down
Standby (ISB)
L
L
H
Data Out
Read
Active (ICC)
L
X
L
Data In
Write
Active (ICC)
L
H
H
High Z
Selected, Outputs Disabled
Active (ICC)
Ordering Information
Speed
(ns)
10
Package
Diagram
Ordering Code
Package Type
CY7C1019CV33-10ZXA
51-85095
32-pin TSOP II (Pb-free)
CY7C1019CV33-10ZXAT
51-85095
32-pin TSOP II (Pb-free)
Operating
Range
Automotive-A
Ordering Code Definitions
CY 7
C 1019 C V33 - 10 Z
X
A X
X = T or Blank
T = Tape and Reel; Blank = Tube
Temperature Range:
A = Automotive-A
Pb-free
Package Type:
Z = 32-pin TSOP II
Speed Grade: 10 ns
V33 = 3.3 V
Process Technology  0.16 µm
Part Identifier
Technology Code: C = CMOS
Marketing Code: 7 = SRAM
Company ID: CY = Cypress
Document Number: 38-05130 Rev. *O
Page 9 of 14
CY7C1019CV33
Package Diagram
Figure 8. 32-pin TSOP II (20.95 × 11.76 × 1.0 mm) ZS32 Package Outline, 51-85095
51-85095 *D
Document Number: 38-05130 Rev. *O
Page 10 of 14
CY7C1019CV33
Acronyms
Acronym
Document Conventions
Description
Units of Measure
CMOS
Complementary Metal Oxide Semiconductor
CE
Chip Enable
°C
degree Celsius
I/O
Input/Output
MHz
megahertz
OE
Output Enable
µA
microampere
SRAM
Static Random Access Memory
mA
milliampere
TSOP
Thin Small Outline Package
mm
millimeter
TTL
Transistor-Transistor Logic
ms
millisecond
WE
Write Enable
Document Number: 38-05130 Rev. *O
Symbol
Unit of Measure
ns
nanosecond
%
percent
pF
picofarad
V
volt
W
watt
Page 11 of 14
CY7C1019CV33
Document History Page
Document Title: CY7C1019CV33, 1-Mbit (128 K × 8) Static RAM
Document Number: 38-05130
Rev.
ECN No.
Submission
Date
Orig. of
Change
**
109245
12/16/01
HGK
New data sheet.
*A
113431
04/10/02
NSL
Updated AC Test Loads and Waveforms:
AC Test Loads split based on speed.
*B
115047
08/01/02
HGK
Added TSOP II Package related information in all instances across the
document.
Added Industrial Temperature related information in all instances across the
document.
Improved ICC limits in all instances across the document.
*C
119796
10/11/02
DFP
Updated Selection Guide (Changed value of maximum standby current from
5 nA to 5 mA).
*D
123030
12/17/02
DFP
Updated Truth Table (To reflect single Chip Enable option).
*E
419983
See ECN
NXR
Added 48-ball VFBGA Package related information in all instances across the
document.
Updated Ordering Information:
Added lead-free parts.
Replaced “Package Name” with “Package Diagram” in column heading and
updated details in the column.
*F
493543
See ECN
NXR
Removed 8 ns speed bin related information in all instances across the
document.
Updated Pin Configuration:
Added Note 1 and referred the same note in Figure 1.
Updated Electrical Characteristics:
Changed the description of IIX parameter from “Input Load Current” to “Input
Leakage Current”.
Removed IOS parameter and its details.
Updated Ordering Information.
*G
2761448
09/09/2009
VKN
Added Automotive-A Temperature Range related information in all instances
across the document.
*H
2897691
03/23/2010
RAME
Updated Ordering Information.
Updated Package Diagram.
*I
3057593
10/13/2010
PRAS
Updated Ordering Information and added Ordering Code Definitions.
Updated Package Diagram.
*J
3072834
11/11/2010
PRAS
Updated Ordering Information:
Removed obsolete parts.
Updated Package Diagram.
*K
3277371
06/08/2011
AJU
Updated Features.
Updated Selection Guide (Removed -12 (Industrial) and -15 (Industrial)
columns).
Updated Electrical Characteristics (Removed -12 (Industrial) and -15
(Industrial) columns).
Updated Switching Characteristics (Removed -12 (Industrial) and -15
(Industrial) columns).
Updated Package Diagram.
Updated to new template.
*L
4146968
10/04/2013
VINI
Updated to new template.
Completing Sunset Review.
Document Number: 38-05130 Rev. *O
Description of Change
Page 12 of 14
CY7C1019CV33
Document History Page (continued)
Document Title: CY7C1019CV33, 1-Mbit (128 K × 8) Static RAM
Document Number: 38-05130
Rev.
ECN No.
Submission
Date
Orig. of
Change
Description of Change
*M
4578508
11/24/2014
VINI
Updated Functional Description:
Added “For a complete list of related documentation, click here.” at the end.
Updated Switching Characteristics:
Added Note 10 and referred the same note in “Write Cycle”.
Updated Switching Waveforms:
Added Note 18 and referred the same note in Figure 7.
*N
4802185
06/18/2015
NILE
Updated Package Diagram:
spec 51-85095 – Changed revision from *B to *D.
Updated to new template.
*O
5017466
11/17/2015
VINI
Added Thermal Resistance.
Completing Sunset Review.
Document Number: 38-05130 Rev. *O
Page 13 of 14
CY7C1019CV33
Sales, Solutions, and Legal Information
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closest to you, visit us at Cypress Locations.
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© Cypress Semiconductor Corporation, 2001-2015. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of
any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for
medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as
critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems
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Disclaimer: CYPRESS MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS MATERIAL, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES
OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Cypress reserves the right to make changes without further notice to the materials described herein. Cypress does not
assume any liability arising out of the application or use of any product or circuit described herein. Cypress does not authorize its products for use as critical components in life-support systems where
a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress’ product in a life-support systems application implies that the manufacturer
assumes all risk of such use and in doing so indemnifies Cypress against all charges.
Use may be limited by and subject to the applicable Cypress software license agreement.
Document Number: 38-05130 Rev. *O
Revised November 17, 2015
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Page 14 of 14