Document No. 001-87638 Rev. ** ECN #: 4005272 Cypress Semiconductor Product Qualification Report QTP# 97483 May 2013 Low Voltage Deep Synchronous FIFO High Speed 100-MHZ Operation R42D – Fab 4 CY7C4255V CY7C4265V CY7C4275V CY7C4285V CY7C4261V CY7C4271V CY7C4281V CY7C4291V CY7C4282V CY7C4292V 8K/16K/32K/64K x 18 16K/32K/64K/128K x 9 64K/128K x 9 CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Mira Ben-Tzur Reliability Director (408) 943-2675 Rene Rodgers Reliability Engineer, MTS (408) 943-2732 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 1 of 12 Document No. 001-87638 Rev. ** ECN #: 4005272 PRODUCT QUALIFICATION HISTORY Qual Report Description of Qualification Purpose Date Comp 97211 New R42D Technology Qualification Oct 97 97396 New 4Meg Product Qualification May 98 97483 New Synchronous FIFO Product Qualification Apr 00 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 2 of 12 Document No. 001-87638 Rev. ** ECN #: 4005272 PACKAGE ASSEMBLY SITE FACILITY 64-Pin STQFP ASE-Taiwan(G) 32-pin PLCC Amkor –Phil (MB) Note: Package Qualification details upon request Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 3 of 12 Document No. 001-87638 Rev. ** ECN #: 4005272 MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION Package Designation: Package Outline, Type, or Name: Mold Compound Name/Manufacturer: J68 68 lead Plastic Leaded Chip Carrier (PLCC) G600 Mold Compound Flammability Rating: V-O per UL 94 Oxygen Rating Index: None Lead Frame Material: Copper Lead Finish, Composition / Thickness: Pure Sn Die Backside Method/Metallization: Grinding Preparation Die Separation Method: Wafer Saw Die Attach Supplier: Ablestik Die Attach Material: 8361J Bond Diagram Designation 10-02241 Wire Bond Method: Thermosonic Wire Material/Size: Gold, 1.0mil Thermal Resistance Theta JA °C/W: 65.10 °C/W Package Cross Section Yes/No: Yes Assembly Process Flow: 49-14012 Name/Location of Assembly (prime) facility: Amkor Philippines (PHIL-M) MSL Level 3 Reflow Profile 260C ELECTRICAL TEST / FINISH DESCRIPTION Test Location: Cypress Philippines (CML-R) Fault Coverage: 100% Note: Please contact a Cypress Representative for other package availability Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 4 of 12 Document No. 001-87638 Rev. ** ECN #: 4005272 RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENTS Stress/Test Test Condition (Temp/Bias) Result P/F High Temperature Operating Life Early Failure Rate Dynamic Operating Condition, Vcc = 3.8, 150°C P High Temperature Operating Life Latent Failure Rate Dynamic Operating Condition, Vcc = 3.8, 150°C P Read and Record Life Test Dynamic Operating Condition, Vcc = 3.8V, 150°C P High Temperature Steady State Life Static Operating Condition, Vcc = 3.63V, 150°C P High Accelerated Saturation Test (HAST) JEDEC STD 22-A110, 130 C, 85%RH, 3.63V Precondition: JESD22 Moisture Sensitivity Level (192 Hrs., 30 C, 60% RH, 260C Reflow) 150 C, No bias P JESD22-A102, 121 C, 100%RH, 15 PSIG Precondition: JESD22 Moisture Sensitivity Level (192 Hrs., 30 C, 60% RH, 260C Reflow) MIL-STD-883C, Method 1010, Condition C, -65 C to 150 C Precondition: JESD22 Moisture Sensitivity Level (192 Hrs., 30 C, 60% RH, 260C Reflow) P High Temp Storage Pressure Cooker Test Temperature Cycle P P P Age Bond Strength 200C, 4HRS MIL-STD-883, Method 883-2011 Current Density Meets the Technology Device Level Reliability Specifications Electrostatic Discharge Human Body Model (ESD-HBM) 2,200V, JESD22-A114E Electrostatic Discharge Charge Device Model (ESD-CDM) Cold Life Test 500V, JESD22-C101C Dynamic Operating Condition, Vcc = 4.4V, -30C P Dynamic Latchup In accordance with JESD78 P Static Latchup 125°C , 200mA, In accordance with JESD78 P Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 5 of 12 P P P Document No. 001-87638 Rev. ** ECN #: 4005272 RELIABILITY FAILURE RATE SUMMARY Stress/Test High Temperature Operating Life Early Failure Rate 1,2 High Temperature Operating Life Long Term Failure Rate Device Tested/ Device Hours # Fails Activation Energy Thermal 3 AF Failure Rate 3418 Devices 1 N/A N/A 293 PPM 1,664,080 DHRs 2 0.7 170 11 FIT 1 Assuming an ambient temperature of 55C and a junction temperature rise of 15C. Chi-squared 60% estimations used to calculate the failure rate.. 3 Thermal Acceleration Factor is calculated from the Arrhenius equation 2 E 1 1 AF = exp A - k T 2 T1 where: EA =The Activation Energy of the defect mechanism. -5 k = Boltzmann's constant = 8.62x10 eV/Kelvin. T1 is the junction temperature of the device under stress and T2 is the junction temperature of the device at use conditions. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 6 of 12 Document No. 001-87638 Rev. ** ECN #: 4005272 Reliability Test Data QTP #: 97211 Device STRESS: Fab Lot # Assy Loc Duration Samp Rej Failure Mechanism ESD-CHARGE DEVICE MODEL, 1000V CY7C1021V33-VC STRESS: Assy Lot # 4719474 TAIWN-G 619704310 COMP 3 0 3 0 ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, 1100V CY7C1021V33-VC 4719474 TAIWN-G 619704310 COMP STRESS: HI-ACCEL SATURATION TEST, 130C, 85%RH, (3.63), PRE COND 192 HR 30C/60%RH, MSL3 CY7C1021V33-VC 4719474 TAIWN-G 619704310 128 64 0 CY7C1021V33-VC 4719474 TAIWN-G 619704310 256 64 0 CY7C1021V33-VC 4721588 TAIWN-G 619705012 128 96 0 STRESS: HIGH TEMP DYNAMIC STEADY STATE LIFE TEST ,150C,3.63V CY7C1021V33-VC 4719474 TAIWN-G 619704310 80 160 0 CY7C1021V33-VC 4719474 TAIWN-G 619704310 168 160 0 CY7C1021V33-VC 4721588 TAIWN-G 619705012 80 160 0 CY7C1021V33-VC 4721588 TAIWN-G 619705012 168 160 0 CY7C1021V33-VC 4722642 TAIWN-G 619705819 80 156 0 CY7C1021V33-VC 4722642 TAIWN-G 619705819 168 156 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE, 150C, 3.80V , Vcc Max CY7C1021V33-VC 4719474 TAIWN-G 619704310 80 538 0 CY7C1021V33-VC 4719474 TAIWN-G 619704310 500 538 1- Single Bit CY7C1021V33-VC 4721588 TAIWN-G 619705012 80 528 0 CY7C1021V33-VC 4721588 TAIWN-G 619705012 500 528 1- Single Bit CY7C1021V33-VC 4722642 TAIWN-G 619705819 80 525 0 CY7C1021V33-VC 4722642 TAIWN-G 619705819 500 525 0 STRESS: HIGH TEMP STORGAGE, PLASTIC, 150C CY7C1021V33-VC 4719474 TAIWN-G 619704310 336 48 0 CY7C1021V33-VC 4719474 TAIWN-G 619704310 1000 48 0 619704310 1000 527 0 STRESS: LONG LIFE VERIFICATION, 150C, 3.80V CY7C1021V33-VC 4719474 TAIWN-G Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 7 of 12 Document No. 001-87638 Rev. ** ECN #: 4005272 Reliability Test Data QTP #: 97211 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: READ & RECCORD LIFETEST , 150C, 3.80V CY7C1021V33-VC 4719474 TAIWN-G 619704310 80 10 0 CY7C1021V33-VC 4719474 TAIWN-G 619704310 1000 10 0 STRESS: TC CONDITION C, -65C TO 150C, PRE COND. 192 HRS 30C/60% RH, MSL3 CY7C1021V33-VC 4719474 TAIWN-G 619704310 300 90 0 CY7C1021V33-VC 4719474 TAIWN-G 619704310 1000 90 0 CY7C1021V33-VC 4721588 TAIWN-G 619705012 300 96 0 CY7C1021V33-VC 4721588 TAIWN-G 619705012 1000 96 0 CY7C1021V33-VC 4722642 TAIWN-G 619705819 300 90 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 8 of 12 Document No. 001-87638 Rev. ** ECN #: 4005272 Reliability Test Data QTP #: 97396 Device STRESS: Assy Loc Fab Lot # Assy Lot # Duration Samp Rej Failure Mechanism ESD-CHARGE DEVICE MODEL, 1000V CY7C1049V33-VC AMKOR-L 4743899 619711944 COMP 3 0 CY7C1049V33-VC CML-R 4751412 619801712 COMP 3 0 STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, 4,4000V CY7C1049V33-VC AMKOR-L 4744957 619800476 COMP 3 0 CY7C1041V33-VC 3 0 CML-R 4751412 619801712 COMP STRESS: HI-ACCEL SATURATION TEST, 130C, 85%RH, (3.63), PRE COND 192 HR 30C/60%RH, MSL3 CY7C1049V33-VC AMKOR-L 4743899 619711944 128 45 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 150C, 3.80V , Vcc Max CY7C1049V33-VC AMKOR-L 4744980 619711941 48 217 0 CY7C1049V33-VC AMKOR-L 4743899 619711944 48 410 1- METAL DEFECT CY7C1049V33-VC AMKOR-L 4745051 619800475 48 756 0 CY7C1049V33-VC AMKOR-L 4744957 619800476 48 443 0 CY7C1049V33-VC AMKOR-L 4741412 619801943 48 1186 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE, 150C, 3.80V , Vcc Max CY7C1049V33-VC AMKOR-L 4745051 619800475 80 380 0 CY7C1049V33-VC AMKOR-L 4745051 619800475 500 379 0 CY7C1049V33-VC AMKOR-L 4744957 619800476 80 304 0 CY7C1049V33-VC AMKOR-L 4744957 619800476 500 304 0 STRESS: HIGH TEMP DYNAMIC STEADY STATE LIFE TEST ,150C,3.63V CY7C1049V33-VC AMKOR-L 4745051 619800475 80 76 0 CY7C1049V33-VC AMKOR-L 4745051 619800475 168 76 0 CY7C1049V33-VC AMKOR-L 4744957 619800476 80 75 0 CY7C1049V33-VC AMKOR-L 4744957 619800476 168 74 0 STRESS: COLD LIFE TEST , -30C, 4.3V CY7C1049V33-VC AMKOR-L 4743899 619711944 500 41 0 CY7C1049V33-VC AMKOR-L 4743899 619711944 1000 41 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 9 of 12 Document No. 001-87638 Rev. ** ECN #: 4005272 Reliability Test Data QTP #: 97396 Device Assy Loc Fab Lot # Assy Lot # Duration Samp Rej Failure Mechanism STRESS: READ & RECCORD LIFETEST , 150C, 3.80V CY7C1049V33-VC AMKOR-L 4743899 619711944 80 10 0 CY7C1049V33-VC AMKOR-L 4743899 619711944 500 10 0 STRESS: TC CONDITION C, -65C TO 150C, PRE COND. 192 HRS 30C/60% RH, MSL3 CY7C1049V33-VC AMKOR-L 4743899 619711944 300 45 0 CY7C1049V33-VC AMKOR-L 4743899 619711944 1000 45 0 CY7C1049V33-VC AMKOR-L 4745051 619800475 300 45 0 CY7C1049V33-VC AMKOR-L 4745051 619800475 1000 45 0 CY7C1049V33-VC AMKOR-L 4744957 619800476 300 45 0 CY7C1049V33-VC AMKOR-L 4744957 619800476 1000 45 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 10 of 12 Document No. 001-87638 Rev. ** ECN #: 4005272 Reliability Test Data QTP #: 97843 Device STRESS: Assy Loc Assy Lot # Duration Samp Rej COMP 3 0 3 0 Failure Mechanism ESD-CHARGE DEVICE MODEL, 1500V CY7C4285V-JC STRESS: Fab Lot # ALPHA-X 4801569 219801126 ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, 2,200V CY7C4285V-JC ALPHA-X 4801569 219801126 COMP STRESS: HI-ACCEL SATURATION TEST, 130C, 85%RH, (3.63), PRE COND 192 HR 30C/60%RH, MSL3 CY7C4285V-JC ALPHA-X 4801569 219801126 128 45 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 150C, 3.80V , Vcc Max CY7C4285V-JC ALPHA-X 4801569 219801126 48 406 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE, 150C, 3.80V , Vcc Max CY7C4285V-JC ALPHA-X 4801569 219801126 80 405 0 CY7C4285V-JC ALPHA-X 4801569 219801126 500 405 0 STRESS: HIGH TEMP DYNAMIC STEADY STATE LIFE TEST ,150C,3.63V CY7C4285V-JC ALPHA-X 4801569 219801126 80 76 0 CY7C4285V-JC ALPHA-X 4801569 219801126 168 76 0 STRESS: READ & RECCORD LIFETEST , 150C, 3.80V CY7C4285V-JC ALPHA-X 4801569 219801126 48 10 0 CY7C4285V-JC ALPHA-X 4801569 219801126 80 10 0 CY7C4285V-JC ALPHA-X 4801569 219801126 500 10 0 STRESS: TC CONDITION C, -65C TO 150C, PRE COND. 192 HRS 30C/60% RH, MSL3 CY7C4285V-JC ALPHA-X 4801569 219801126 300 45 0 CY7C4285V-JC ALPHA-X 4801569 219801126 1000 45 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 11 of 12 Document No. 001-87638 Rev. ** ECN #: 4005272 Document History Page Document Title: QTP# 97483: LOW VOLTAGE DEEP SYNC FIFO'S - R42D TECHNOLOGY, FAB4, DEVICE:CY7C42*v 001-87638 Document Number: Rev. ECN Orig. of No. Change ** 4005272 ILZ Description of Change Initial Spec Release Qualification report published on Cypress.com is not in spec format. Initiated spec for QTP 97483 and updated current assembly site and package information qualified for package options for this device qualifcation. Distribution: WEB Posting: None Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 12 of 12