Document No.001-87678 Rev. *B ECN # 4394116 Cypress Semiconductor Product Qualification Report QTP# 99202 VERSION *B May 2014 Low Voltage Synchronous/Asynchronous RAM R52D-3 Technology at Fab 4 CY7C056V CY7C057V CY7C09569V CY7C09579V 3.3V, 16K/32K x 36 FLEx36™ Asynchronous Dual - Port Static RAM 3.3V, 16K/32K x 36 FLEx36™ Synchronous Dual - Port Static RAM FLEx36™ is a Trademark of Cypress Semiconductor Corporation FOR ANY QUESTIONS ON THIS REPORT, PLEASE CONTACT [email protected] or via a CYLINK CRM CASE Prepared By: Lorena R. Zapanta (ILZ) Reliability Engineer Reviewed By: Rene Rodgers (RT) Reliability Manager Approved By: Richard Oshiro(RGO) Reliability Director Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 1 of 10 Document No.001-87678 Rev. *B ECN # 4394116 PRODUCT QUALIFICATION HISTORY Qual Report Description of Qualification Purpose Date Comp 99202 CY7C09569V/CY7C09579V, R52D-3 Technology Sep 99 040701 CY7C09579V GOOBI/Burn-In Reduction to 12hrs (144 TQFP) May 04 042301 CY7C09579V Burn-In Reduction to 6hrs (172 BGA) Nov 04 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 2 of 10 Document No.001-87678 Rev. *B ECN # 4394116 PRODUCT DESCRIPTION (for qualification) Qualification Purpose: Qualify CY7C09569V / CY7C09579V and its FLEx36 family in qualified R52D-3 Technology, Fab4. Marketing Part #: CY7C056V / CY7C057V / CY7C09569V / CY7C09579V Device Description: 3.3V, Commercial and Industrial offered in 144-P TQFP and 172-B FBGA Package Cypress Division: Cypress Semiconductor Corporation – Data Com Division (DCD) Overall Die (or Mask) REV Level (pre-requisite for qualification): What ID markings on Die: Rev. A 7C05793A TECHNOLOGY/FAB PROCESS DESCRIPTION - R52D-3 Number of Metal Layers: 2 Metal Composition: Passivation Type and Materials: Metal 1: 500 Å TiW/6000 Å Al-.5%Cu/300 Å TiW Metal 2: 300Å CoTi/8000Å Al.5%Cu/300Å TiW 1000Å Oxide + 9000Å Nitride Free Phosphorus contents in top glass layer(%): 0% Number of Transistors in Device 29,066,890 Number of Gates in Device 4.8 million Generic Process Technology/Design Rule (drawn): Gate Oxide Material/Thickness (MOS): CMOS, Double Metal /0.25 m Name/Location of Die Fab (prime) Facility: Cypress Semiconductor - Bloomington, MN Die Fab Line ID/Wafer Process ID: Fab4/R52D-3 SiO2 / 50 Å PACKAGE AVAILABILITY PACKAGE ASSEMBLY FACILITY SITE 144-pin TQFP TAIWN-G 256-ball FBGA (extended qual to 172-ball) TAIWN-G Note: Package Qualification details upon request Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 3 of 10 Document No.001-87678 Rev. *B ECN # 4394116 MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION Package Designation: Package Outline, Type, or Name: Mold Compound Name/Manufacturer: Mold Compound Flammability Rating: A144 144-pin Thin Quad Flat Pack (TQFP) Sumitomo EME 7320 V-O per UL94 Oxygen Rating Index: >28% Lead Frame Material: Copper Lead Finish, Composition / Thickness: Solder Plate, 85%Sn, 15%Pb Die Backside Preparation Method/Metallization: N/A Die Separation Method: Wafer Saw Die Attach Supplier: Ablestik Die Attach Material: 8361 Bond Diagram Designation 10-03561 Wire Bond Method: Thermosonic Wire Material/Size: Gold/ 1.3mil Thermal Resistance Theta JA °C/W: 42C/W Package Cross Section Yes/No: N/A Name/Location of Assembly (prime) facility: ASE Taiwan (TAIWN-G) ELECTRICAL TEST / FINISH DESCRIPTION Test Location: ASE Taiwan (TAIWN-G), KYEC Fault Coverage: 100% Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 4 of 10 Document No.001-87678 Rev. *B ECN # 4394116 RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENT Stress/Test Test Condition (Temp/Bias ) Dynamic Operating Condition, Vcc Max =3.8V, 125°C Result P/F Dynamic Operating Condition, Vcc Max = 4.5V, 150°C P High Accelerated Saturation Test (HAST) 130°C, 3.63V, 85%RH Precondition: JESD22 Moisture Sensitivity MSL 3 192 Hrs, 30°C / 60%RH, 220C+5, -0C Reflow P Temperature Cycle MIL-STD-883C, Method 1010, Condition C, -65°C to 150°C Precondition: JESD22 Moisture Sensitivity MSL 3 192 Hrs, 30°C / 60%RH, 220C+5, -0C Reflow P Pressure Cooker 121ºC, 100%RH, 15 Psig Precondition: JESD22 Moisture Sensitivity MSL 3 192 Hrs, 30°C / 60%RH, 220C+5, -0C Reflow P High Temperature Operating Life P Early Failure Rate High Temperature Operating Life Latent Failure Rate Electrostatic Discharge Human Body Model (ESD-HBM) 2,200V, JESD22-A114 Electrostatic Discharge Charge Device Model (ESD-CDM) 500V, JESD22-C101 High Temperature Steady State Life Static Operating Condition, Vcc = 3.63V, 150C P High Temperature Storage 165C, No bias P Age Bond Pull MIL-STD-883, Method 2011 P Current Density P P Meets the Technology Device Level Reliability Specifications Static Latch-up 125°C , 200mA, In accordance with JESD78 P Acoustic Microscopy, MSL 3 J-STD-020 P Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 5 of 10 Document No.001-87678 Rev. *B ECN # 4394116 RELIABILITY FAILURE RATE SUMMARY Stress/Test High Temperature Operating Life Early Failure Rate1 @125C High Temperature Operating Life2,3 Long Term Failure Rate 1 2 3 4 # Fails Activation Energy Thermal AF4 Failure Rate 5850 0 N/A N/A 0 PPM 387,780 DHRs 2 0.7 170 30 FIT Device Tested/ Device Hours A production burn-in of 48 Hrs at 150C, 3.8V is required for the product. Assuming an ambient temperature of 55C and a junction temperature rise of 15C. Chi-squared 60% estimations used to calculate the failure rate. Thermal Acceleration Factor is calculated from the Arrhenius equation E 1 1 AF = exp A - k T 2 T1 where: EA =The Activation Energy of the defect mechanism. -5 k = Boltzmann's constant = 8.62x10 eV/Kelvin. T1 is the junction temperature of the device under stress and T2 is the junction temperature of the device at use conditions. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 6 of 10 Document No.001-87678 Rev. *B ECN # 4394116 Reliability Test Data QTP # : 99202 Device STRESS: Fab Lot # Assy Lot # Assy Loc Duration Samp Rej HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 150C, 4V, Vcc Max CY7C09579V-AC 4909273 619912249 TAIWN-G 48 773 0 CY7C09579V-AC 4922904 619920052 TAIWN-G 48 784 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE, 150C, 3.8V, Vcc Max CY7C09579V-AC 4909273 619912249 TAIWN-G 80 396 0 CY7C09579V-AC 4909273 619912249 TAIWN-G 500 386 1 CY7C09579V-AC 4922904 619920052 TAIWN-G 80 393 0 CY7C09579V-AC 4922904 619920052 TAIWN-G 500 387 1 STRESS: 4909273 619912249 TAIWN-G 128 48 0 CY7C09579V-AC 4922904 619920052 TAIWN-G 128 48 0 4909273 619912249 TAIWN-G 168 48 0 CY7C09579V-AC 4922904 619920052 TAIWN-G 168 50 0 TAIWN-G COMP 3 0 ESD-CHARGE DEVICE MODEL, 500V CY7C09579V-AC STRESS: 4909273 619912249 ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015, 2,800V CY7C09579V-AC 4909273 619912249 TAIWN-G COMP 3 0 CY7C09579V-AC 4909273 619912249 TAIWN-G COMP 3 0 3 0 3 0 STRESS: DYNAMIC LATCH-UP TESTING CY7C057V-AC STRESS: 4909273 619912249 TAIWAN-G COMP STATIC LATCH-UP TESTING, 125C, 9.5V, +/- 200mA CY7C09579V-AC STRESS: Gate Oxide Defect PRESSURE COOKER TEST, 121C, 100%RH, MSL3 CY7C09579V-AC STRESS: Particle Defect HI-ACCEL SATURATION TEST, 130C, 85%RH, 3.63V), PRE COND 192 HR 30C/60%RH, MSL3 CY7C09579V-AC STRESS: Failure Mechanism 4909273 619912249 TAIWN-G COMP TC COND. C -65C TO 150C, PRECONDITION 192 HRS 30C/60%RH, MSL3 CY7C09579V-AC 4909273 619912249 TAIWN-G 300 47 1 Failed ISB3 CY7C09579V-AC 4909273 619912249 TAIWN-G 500 46 1 Particle Defect CY7C09579V-AC 4909273 619912249 TAIWN-G 1000 46 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 7 of 10 Document No.001-87678 Rev. *B ECN # 4394116 Reliability Test Data QTP #: 040701 Device STRESS: Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 150C, 3.8V, Vcc Max CY7C09579V (7C05793A) 4351632 610408280 TAIWN-G 48 1001 0 CY7C09579V (7C05793A) 4351632 610408280N TAIWN-G 48 974 0 CY7C09579V (7C05793A) 4351704 610408279 TAIWN-G 48 1860 0 CY7C09579V (7C05793A) 4352920 610412218N TAIWN-G 48 1028 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 8 of 10 Document No.001-87678 Rev. *B ECN # 4394116 Reliability Test Data QTP #: 042301 Device STRESS: Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 125C, 3.8V, Vcc Max CY7C09579V (7C05793A) 422508 CY7C09579V (7C05793A) 423864 CY7C09579V (7C05793A) CY7C09579V (7C05793A) 610438476 TAIWN-G 96 492 0 610434477 TAIWN-G 96 160 0 423864 610434477N1 TAIWN-G 96 159 0 423864 610434477N1 TAIWN-G 96 177 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 9 of 10 Document No.001-87678 Rev. *B ECN # 4394116 Document History Page Document Title: QTP # 99202: LOW VOLTAGE SYNCHRONOUS/ASYNCHRONOUS RAM R52D-3 TECHNOLOGY AT FAB 4 001-87678 Document Number: Rev. ECN Orig. of No. Change ** 4007788 ILZ *A 4392970 ILZ Description of Change Initial Spec Release Qualification report published on Cypress.com is documented on memo LGQ-144 and not in spec format. Initiated spec for QTP 99202 and data from LGQ-144 was transferred to qualification report spec template. Sunset Review Updated front page to reflect new qualification report template per Spec 001-57716 Page 3 – Major package information table - Deleted Assembly process flow - obsolete spec Reliability tests performed per specification requirements Deleted revision of the following standards: Temperature Cycle, X-ray, Thermal Shock: Deleted Rev C,MIL-STD-883 ESD-HBM , Deleted Rev A., JESD22-A114 ESD-CDM : Deleted Rev C, JESD22-C101 Ball Shear: Ball shear, JESD22-B116 Thermal Shock: Deleted JESD22-A106 *B 4394116 ILZ Correction on Page 1 Added this information “ FOR ANY QUESTIONS ON THIS REPORT, PLEASE CONTACT [email protected] or via a CYLINK CRM CASE Distribution: WEB Posting: None Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 10 of 10