Document No. 001-87727 Rev. ** ECN #: 4011453 Cypress Semiconductor Product Qualification Report QTP# 060201 May 2013 TM PSoC Mixed Signal Array Hydra Device Family S4AD-5 Technology, Fab4 CY8C29466 CY8C29566 CY8C29666 CY8C29866 CY8C27466 CY8C27566 CY8C27666 CY8C27866 PSoC™ Mixed Signal Array with On-Chip Controller CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Mira Ben-Tzur Reliability Director (408) 943-2675 Zhaomin Ji Principal Reliability Engineer (408) 943-2675 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 1 of 14 Document No. 001-87727 Rev. ** ECN #: 4011453 PRODUCT QUALIFICATION HISTORY Qual Report Description of Qualification Purpose Date Comp 052004 PSoC 8C21001A Neutron Product Family on SONOS S4AD-5 Technology, Fab4 Aug 05 060201 PSoC 8C29000A Hydra Product Family Transfer on SONOS S4AD-5 Technology, Fab4 Dec 07 080703 Qualify Hydra 8C29000A at CMI on SONOS S4AD-5 Technology, Fab4 Apr 08 082009 Qualify new MM2 mask on Hydra for Industrial (8C29000AC) S4AD-5 Technology, Fab4 Nov 08 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 2 of 14 Document No. 001-87727 Rev. ** ECN #: 4011453 PRODUCT DESCRIPTION (for qualification) Qualification Purpose: Qualify Hydra (8C29000A) Product Family Transfer on S4AD-5 process at Fab4 Marketing Part #: CY8C29466, CY8C29566, CY8C29666, CY8C29866, CY8C27466, CY8C27566, CY8C27666, CY8C27866 Device Description: Cypress Division: 3.3V and 5V Industrial Programmable System on Chip Cypress Semiconductor Corporation – Consumer and Computation Division TECHNOLOGY/FAB PROCESS DESCRIPTION S4AD-5 Number of Metal Layers: 2 Passivation Type and Materials: Metal 1: 500A TiW/6,000A Al 0.5% Cu /300A TiW Metal Composition Metal 2: 500A TiW/8,000A Al 0.5% Cu/300A TiW : 7,000A TeOs / 6,000A Si3N4 Generic Process Technology/Design Rule (µ- Single Poly, Double Metal, 0.35 µm Gate Oxide Material/Thickness (MOS): SiO2 / 110A Name/Location of Die Fab (prime) Facility: Cypress Semiconductor – Minnesota Die Fab Line ID/Wafer Process ID: Fab 4, S4AD-5, SONOS PACKAGE AVAILABILITY PACKAGE ASSEMBLY SITE FACILITY 28-Lead PDIP PHIL-M, CML-RA 28/48-Lead SSOP PHIL-M, TAIWAN-T, CML-RA, CHINA-JT 28-Lead SOIC CML-RA, CHINA-JT 48-Lead QFN KOREA-L, CML-RA, TAIWAN-G 44/100-Lead TQFP CML-RA, CHINA-JT Note: Package Qualification details upon request. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 3 of 14 Document No. 001-87727 Rev. ** ECN #: 4011453 MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION Package Designation: Package Outline, Type, or Name: Mold Compound Name/Manufacturer: Mold Compound Flammability Rating: SP28 28-Lead SSOP Sumitomo EME-G600 V-O per UL94 Oxygen Rating Index: N/A Lead Frame Material: Copper Lead Finish, Composition / Thickness: Ni-Pd-Au Die Backside Preparation Method/Metallization: Backgrind Die Separation Method: Wafer Saw Die Attach Supplier: Ablestik Die Attach Material: 8290 Die Attach Method: Epoxy Bond Diagram Designation: 10-05678 Wire Bond Method: Thermosonic Wire Material/Size: Au, 1.0mil Thermal Resistance Theta JA °C/W: 90°C/W Package Cross Section Yes/No: N/A Assembly Process Flow: 001−09888 Name/Location of Assembly (prime) facility: Amkor Philippines (M) MSL Level 3 Reflow Profile 260C ELECTRICAL TEST / FINISH DESCRIPTION Test Location: CML-R, KYEC Note: Please contact a Cypress Representative for other packages availability. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 4 of 14 Document No. 001-87727 Rev. ** ECN #: 4011453 RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENT Stress/Te st High Temperature Operating Life Early Failure Rate Test Condition (Temp/Bias AEC-Q100-008 and JESD22-A108 Result P/F P Dynamic Operating Condition, Vcc Max = 5.5V, 125°C AEC-Q100-008 and JESD22-A108 Dynamic Operating Condition, Vcc Max = 5.5V, 125°C P High Accelerated Saturation Test (HAST) 130°C, 5.25V, 85%RH P Temperature Cycle MIL-STD-883C, Method 1010, Condition C, -65°C to 150°C Precondition: JESD22 Moisture Sensitivity Level 1 168 Hrs, 85C/85%RH, 260°C+0, -5°C Reflow Precondition: JESD22 Moisture Sensitivity Level 3 192 Hrs, 30C/60%RH, 260°C+0, -5°C Reflow P Pressure Cooker 121°C, 100%RH, 15 Psig P High Temperature Operating Life Latent Failure Rate Precondition: JESD22 Moisture Sensitivity Level 1 168 Hrs, 85C/85%RH, 260°C+0, -5°C Reflow Precondition: JESD22 Moisture Sensitivity Level 1 168 Hrs, 85C/85%RH+3IR-Reflow, 260°C+0, -5°C Data Retention 150°C, No Bias P High Temperature Steady State life 125°C, 5.5V, Vcc Max P Electrostatic Discharge Human Body Model (ESD-HBM) 2,200V JESD22, Method A114-B P JESD22, Method A114-E Electrostatic Discharge Human Body Model (ESD-HBM) 2,200V MIL-STD-883, Method 3015.7 P Electrostatic Discharge Charge Device Model (ESD-CDM) 500V JESD22-C101 P Endurance Test MIL-STD-883, Method 883-1033 P Age Bond Strength 200C, 4hrs MIL-STD-883, Method 883-2011 P Current Density Meets the Technology Device Level Reliability Specifications P Low Temperature Operating Life -30C, 5.5V, 8MHZ P SEM Analysis MIL-STD-883, Method 883-2018-2 P Acoustic Microscopy J-STD-020 P Dynamic Latch up 125C, 8.3V P Latch up Sensitivity 125C, ± 200mA, ± 300mA P Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 5 of 14 Document No. 001-87727 Rev. ** ECN #: 4011453 RELIABILITY FAILURE RATE SUMMARY Stress/Test Device Tested/ Device Hours # Fails Activation Energy Thermal3 A.F Failure Rate High Temperature Operating Life Early Failure Rate1 2.445 Devices 0 N/A N/A 0 PPM High Temperature Operating Life1, 2 Long Term Failure Rate 780,750 DHRs 0 0 .7 55 21 FIT 1 2 3 Assuming an ambient temperature of 55°C and a junction temperature rise of 15°C. Chi-squared 60% estimations used to calculate the failure rate. Thermal Acceleration Factor is calculated from the Arrhenius equation E 1 1 AF = exp A - k T 2 T1 Where: EA =The Activation Energy of the defect mechanism. k = Boltzmann's constant = 8.62x10-5 eV/Kelvin. T1 is the junction temperature of the device under stress and T2 is the junction temperature of the device at use conditions. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 6 of 14 Document No. 001-87727 Rev. ** ECN #: 4011453 Reliability Test Data QTP #: 052004 Device STRESS: Fab Lot # Assy Lot # Assy Loc Duration Samp Rej ACOUSTIC, MSL1 CY8C21534 (8C21534A) 4516647 610521157 TAIWAN-T COMP 15 0 CY8C21234 (8C21234A) 4516674 610521849 PHIL-M COMP 15 0 CY8C21234 (8C21234A) 4517851 610522407 PHIL-M COMP 15 0 STRESS: AGE BOND STRENGTH CY8C21534 (8C21534A) 4516647 610521157 TAIWAN-T COMP 10 0 CY8C21234 (8C21234A) 4516674 610521849 PHIL-M COMP 10 0 CY8C21234 (8C21234A) 4517851 610522407 PHIL-M COMP 10 0 STRESS: DATA RETENTION, PLASTIC, 150C CY8C21534 (8C21534A) 4516647 610521157 TAIWAN-T 500 256 0 CY8C21534 (8C21534A) 4516647 610521157 TAIWAN-T 1000 256 0 CY8C21234 (8C21234A) 4516674 610521849 PHIL-M 500 256 0 CY8C21234 (8C21234A) 4516674 610521849 PHIL-M 1000 254 0 CY8C21234 (8C21234A) 4517851 610522407 PHIL-M 500 252 0 CY8C21234 (8C21234A) 4517851 610522407 PHIL-M 1000 252 0 4516647 610521157 TAIWAN-T COMP 45 0 STRESS: ENDURANCE CY8C21534 (8C21534A) STRESS: ESD-CHARGE DEVICE MODEL, (500V) CY8C21534 (8C21534A) 4516647 610521157 TAIWAN-T COMP 9 0 CY8C21534 (8C21534A) 4516674 610522255 TAIWAN-T COMP 9 0 CY8C21534 (8C21534A) 4517851 610522404 TAIWAN-T COMP 9 0 STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, (2,200V) CY8C21534 (8C21534A) 4516647 610521157 TAIWAN-T COMP 9 0 CY8C21534 (8C21534A) 4516674 610522255 TAIWAN-T COMP 9 0 CY8C21534 (8C21534A) 4517851 610522404 TAIWAN-T COMP 9 0 STRESS: Failure Mechanism ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015, (2,200V) CY8C21534 (8C21534A) 4516647 610521157 TAIWAN-T COMP 3 0 CY8C21534 (8C21534A) 4516674 610522255 TAIWAN-T COMP 3 0 CY8C21534 (8C21534A) 4517851 610522404 TAIWAN-T COMP 3 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 7 of 14 Document No. 001-87727 Rev. ** ECN #: 4011453 Reliability Test Data QTP #: 052004 Device STRESS: Fab Lot # Assy Lot # Assy Loc Duration Samp Rej HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (125C, 5.5V, Vcc Max) CY8C21534 (8C21534A) 4516647 610521157 TAIWAN-T 120 1002 0 CY8C21234 (8C21234A) 4516674 610521849 PHIL-M 120 1002 0 CY8C21234 (8C21234A) 4517851 610522407 PHIL-M 120 1002 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (125C, 5.5V, Vcc Max) CY8C21534 (8C21534A) 4516647 610521157 TAIWAN-T 750 235 0 CY8C21534 (8C21534A) 4517851 610522404 TAIWAN-T 750 235 0 CY8C21534 (8C21534A) 4516674 610522255 TAIWAN-T 750 235 0 STRESS: HIGH TEMP STEADY STATE LIFE TEST (125C, 5.5V) CY8C21534 (8C21534A) 4516647 610521157 TAIWAN-T 168 76 0 CY8C21534 (8C21534A) 4516647 610521157 TAIWAN-T 336 76 0 STRESS: HI-ACCEL SATURATION TEST (130C, 85%RH, 5.25V), PRE COND 168 HR 85C/85%RH (MSL1) CY8C21234 (8C21234A) 4516647 610527569 PHIL-M 128 49 0 CY8C21234 (8C21234A) 4516674 610521849 PHIL-M 128 44 0 CY8C21234 (8C21234A) 4517851 610522407 PHIL-M 128 44 0 500 45 0 STRESS: Failure Mechanism LOW TEMPERATURE OPERATING LIFE (-30C, 5.5V) CY8C21534 (8C21534A) 4516647 610521157 TAIWAN-T STRESS: PRESSURE COOKER TEST (121C, 100%RH), 15 Psig, PRE COND 168 HR 85C/85%RH (MSL1) CY8C21534 (8C21534A) 4516647 610521157 TAIWAN-T 168 45 0 CY8C21534 (8C21534A) 4516647 610521157 TAIWAN-T 336 45 0 CY8C21234 (8C21234A) 4516674 610521849 PHIL-M 168 45 0 CY8C21234 (8C21234A) 4516674 610521849 PHIL-M 336 45 0 CY8C21234 (8C21234A) 4517851 610522407 PHIL-M 168 45 0 CY8C21234 (8C21234A) 4517851 610522407 PHIL-M STRESS: STATIC LATCH-UP TESTING (125C, 11V, ±300mA) 336 45 0 CY8C21534 (8C21534A) 4516647 610521157 TAIWAN-T COMP 3 0 CY8C21534 (8C21534A) 4516674 610522255 TAIWAN-T COMP 3 0 CY8C21534 (8C21534A) 4517851 610522404 TAIWAN-T COMP 3 0 610521157 TAIWAN-T COMP 3 0 STRESS: DYNAMIC LATCH-UP (8.3V) CY8C21534 (8C21534A) 4516647 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 8 of 14 Document No. 001-87727 Rev. ** ECN #: 4011453 Reliability Test Data QTP #: 052004 Device STRESS: Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism TC COND. C -65C TO 150C, PRE COND 168 HRS 85C/85%RH (MSL1) CY8C21534 (8C21534A) 4516647 610521157 TAIWAN-T 300 50 0 CY8C21534 (8C21534A) 4516647 610521157 TAIWAN-T 500 50 0 CY8C21534 (8C21534A) 4516647 610521157 TAIWAN-T 1000 50 0 CY8C21234 (8C21234A) 4516674 610521849 PHIL-M 300 45 0 CY8C21234 (8C21234A) 4516674 610521849 PHIL-M 1000 45 0 CY8C21234 (8C21234A) 4517851 610522407 PHIL-M 300 45 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 9 of 14 Document No. 001-87727 Rev. ** ECN #: 4011453 Reliability Test Data QTP #: 060201 Device STRESS: Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism ESD ACOUSTIC, MSL3 CY8C29466 (8C29466A) 4547386 610608768 PHIL-M COMP 15 0 CY8C29466 (8C29466A) 4548960 610608766 PHIL-M COMP 15 0 CY8C29466 (8C29466A) 4549207 610610435 PHIL-M COMP 15 0 PHIL-M COMP 9 0 STRESS: ESD-CHARGE DEVICE MODEL, (500V) CY8C21434 (8C29466A) STRESS: 4547386 610608768 ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-E, (2,200V) CY8C21434 (8C29466A) 4547386 610608768 PHIL-M COMP 8 0 STRESS: NVM ENDURANCE / DATA RETENTION TEST CY8C29466 (8C29466A) 4547386 610608768 PHIL-M 1008 79 0 CY8C29466 (8C29466A) 4548960 610608766 PHIL-M 1008 78 0 CY8C29466 (8C29466A) 4549207 610610435 PHIL-M 1008 80 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 125C, 5.5V, Vcc Max CY8C29466 (8C29466A) 4547386 610608768 PHIL-M 48 815 0 CY8C29466 (8C29466A) 4548960 610608766 PHIL-M 48 815 0 CY8C29466 (8C29466A) 4549207 610610435 PHIL-M 48 815 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE, 125C, 5.5V, Vcc Max CY8C29466 (8C29466A) 4547386 610608768 PHIL-M 1000 84 0 CY8C29466 (8C29466A) 4548960 610608766 PHIL-M 1000 84 0 CY8C29466 (8C29466A) 4549207 610610435 PHIL-M 1000 84 0 STRESS: PRESSURE COOKER TEST, 121C, 100%RH, 15 Psig, PRE COND 192 HR 30C/60%RH, MSL3 CY8C29466 (8C29466A) 4547386 610608768 PHIL-M 96 80 0 CY8C29466 (8C29466A) 4547386 610608768 PHIL-M 168 80 0 CY8C29466 (8C29466A) 4548960 610608766 PHIL-M 96 79 0 CY8C29466 (8C29466A) 4548960 610608766 PHIL-M 168 79 0 CY8C29466 (8C29466A) 4549207 610610435 PHIL-M 96 76 0 CY8C29466 (8C29466A) 4549207 610610435 PHIL-M 168 76 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 10 of 14 Document No. 001-87727 Rev. ** ECN #: 4011453 Reliability Test Data QTP #: 060201 Device STRESS: Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism HI-ACCEL SATURATION TEST, 130C, 85%RH, 5.25V, PRE COND 192 HR 30C/60%RH, MSL3 CY8C29466 (8C29466A) 4547386 610608768 PHIL-M 128 80 0 CY8C29466 (8C29466A) 4548960 610608766 PHIL-M 96 78 0 CY8C29466 (8C29466A) 4548960 610608766 PHIL-M 128 78 0 CY8C29466 (8C29466A) 4549207 610610435 PHIL-M 96 78 0 CY8C29466 (8C29466A) 4549207 610610435 PHIL-M 128 78 0 STRESS: TC COND. C -65C TO 150C, PRE COND 192 HRS 30C/60%RH, MSL3 CY8C29466 (8C29466A) 4547386 610608768 PHIL-M 500 80 0 CY8C29466 (8C29466A) 4547386 610608768 PHIL-M 1000 75 0 CY8C29466 (8C29466A) 4548960 610608766 PHIL-M 500 80 0 CY8C29466 (8C29466A) 4548960 610608766 PHIL-M 1000 79 0 CY8C29466 (8C29466A) 4549207 610610435 PHIL-M 1000 80 0 COMP 3 0 STRESS: STATIC LATCH-UP TESTING (125C, 8.50V, ±200mA) CY8C21434 (8C29466A) 4547386 610608768 PHIL-M Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 11 of 14 Document No. 001-87727 Rev. ** ECN #: 4011453 Reliability Test Data QTP #: 080703 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism CY8C29666 (8C29666A) 4749916 610809099 CML-R COMPARABLE CY8C29466A (8C29466A) 4749916 610809465 PHIL-M COMPARABLE CY8C29666 (8C29666A) 4749916 610809099 CML-R COMPARABLE CY8C29466A (8C29466A) 4749916 610809465 PHIL-M COMPARABLE STRESS: E-TEST STRESS: SORT YIELD Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 12 of 14 Document No. 001-87727 Rev. ** ECN #: 4011453 Reliability Test Data QTP #: 082009 Device Fab Lot # STRESS: Assy Lot # 610837905 PHIL-M COMP 3 0 4824302 610837905 PHIL-M COMP 3 0 4824302 610837905 PHIL-M 1008 80 0 COMP 3 0 COMP 3 0 COMP 3 0 COMP 3 0 COMP 3 0 4824302 610837905 PHIL-M 4824302 610837905 PHIL-M 4824302 610837905 PHIL-M 4824302 610837905 PHIL-M 4824302 610837905 PHIL-M 4824302 610837905 PHIL-M COMP 3 0 4824302 610837905 PHIL-M COMP 30 0 4824302 N/A N/A COMPARABLE 4824302 N/A N/A COMPARABLE E-TEST DISTRIBUTION CY8C29466 (8A29466A) STRESS: 4824302 ESD-HUMAN BODY CIRCUIT PER JESD22-A114-B, 6000V CY8C29466 (8A29466A) STRESS: 0 ESD-HUMAN BODY CIRCUIT PER JESD22-A114-B, 4000V CY8C29466 (8A29466A) STRESS: 3 ESD-HUMAN BODY CIRCUIT PER JESD22-A114-B, 2000V CY8C29466 (8A29466A) STRESS: COMP ESD-HUMAN BODY CIRCUIT PER JESD22-A114-B, 1500V CY8C29466 (8A29466A) STRESS: PHIL-M ESD-HUMAN BODY CIRCUIT PER JESD22-A114-B, 1000V CY8C29466 (8A29466A) STRESS: 610837905 ESD-HUMAN BODY CIRCUIT PER JESD22-A114-B, 500V CY8C29466 (8A29466A) STRESS: 4824302 ENDURANCE CY8C29466 (8A29466A) STRESS: Failure Mechanism ESD-CHARGE DEVICE MODEL, 750V CY8C29466 (8A29466A) STRESS: Rej ESD-CHARGE DEVICE MODEL, 500V CY8C29466 (8A29466A) STRESS: Samp ESD-CHARGE DEVICE MODEL, 250V CY8C29466 (8A29466A) STRESS: Assy Loc Duration E-TEST YIELD CY8C29466 (8A29466A) STRESS: SORT YIELD CY8C29466 (8A29466A) STRESS: STATIC LATCH-UP TESTING, 125C, 7.88V, +/200mA CY8C29466 (8A29466A) STRESS: 4824302 610837905 PHIL-M COMP 6 0 COMP 3 0 STATIC LATCH-UP TESTING, 125C, 8.66V, +/240mA CY8C29466 (8A29466A) 4824302 610837905 PHIL-M Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 13 of 14 Document No. 001-87727 Rev. ** ECN #: 4011453 Document History Page Document Title: Fab4 Document Number: QTP#060201 : PSoC TM Mixed Signal Array Hydra Device Family S4AD-5 Technology, 001-87727 Rev. ECN Orig. of No. Change ** 4011453 ILZ Description of Change Initial Spec Release Qualification report published on Cypress.com is documented on memo HGA-650 and not in spec format. Initiated spec for QTP 060201 and data from HGA-650 was transferred to qualification report spec template Distribution: WEB Posting: None Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 14 of 14