Document No. 001-87702 Rev. *C ECN #4403815 Cypress Semiconductor Product Qualification Report QTP# 093003 VERSION*C June, 2014 PSoC® Emerald Device Family S4AD, Fab4 CY8C28243 CY8C28403 CY8C28413 CY8C28433 CY8C28445 CY8C28452 CY8C28513 CY8C28533 CY8C28545 CY8C28623 CY8C28643 CY8C28645 PSoC® Programmable Systemon-Chip FOR ANY QUESTIONS ON THIS REPORT, PLEASE CONTACT [email protected] or via a CYLINK CRM CASE Prepared By: Josephine Pineda Reliability Engineer Reviewed By: Zhaomin Ji Reliability Manager Approved By: Richard Oshiro Reliability Director Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 1 of 10 Document No. 001-87702 Rev. *C ECN #4403815 PRODUCT QUALIFICATION HISTORY QTP Number Description of Qualification Purpose Date 052004 PSoC 8C21001A Neutron Product Family on SONOS S4AD-5 Technology, Fab4 Aug 05 093003 PSoC CY8C28x45 Emerald Product Family on S4AD Technology, Fab4 Oct 09 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 2 of 10 Document No. 001-87702 Rev. *C ECN #4403815 PRODUCT DESCRIPTION (for qualification) Qualification Purpose: Qualify new PSoC CY8C28x45 Emerald Device Family on S4AD Technology, Fab4 Device Description: CY8C28243, CY8C28403, CY8C28413, CY8C28433, CY8C28445, CY8C28452, CY8C28513, CY8C28533, CY8C28545, CY8C28623, CY8C28643, CY8C28645 PSOC (R) Programmable System-on-Chip Cypress Division: Cypress Semiconductor Corporation – Programmable Systems Division Marketing Part #: TECHNOLOGY/FAB PROCESS DESCRIPTION S4AD-5 Number of Metal Layers: 2 Metal Composition: Metal 1: 500A TiW/6,000A Al /300A TiW Metal 2: 500A TiW/8,000A Al /300A TiW Passivation Type and Materials: 7,000A TEOS / 6,000A Si3N4 Generic Process Technology/Design Rule (-drawn): Single Poly, Double Metal, 0.35 m Gate Oxide Material/Thickness (MOS): SiO2 / 110A Name/Location of Die Fab (prime) Facility: Cypress Semiconductor - Minnesota Die Fab Line ID/Wafer Process ID: Fab 4, S4AD, SONOS PACKAGE AVAILABILITY PACKAGE ASSEMBLY SITE FACILITY 20-Lead SSOP CML-RA 28-Lead SSOP CML-RA 56-Lead SSOP JCET-CHINA (JT) 44- Lead TQFP JCET-CHINA (JT) 48- Lead QFN AMKOR-MB, ASE-TAIWAN (G), CML-RA Note: Package Qualification details upon request. 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Page 3 of 10 Document No. 001-87702 Rev. *C ECN #4403815 MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION Package Designation: Package Outline, Type, or Name: Mold Compound Name/Manufacturer: Mold Compound Flammability Rating: Mold Compound Alpha Emission Rate: SP28 28-Lead Shrunk Small Outline Package (SSOP) Kyocera KEG3000DA-CY V-O per UL94 N/A Oxygen Rating Index: 70 Lead Frame Material: Copper Lead Finish, Composition / Thickness: NiPdAu Die Backside Method/Metallization: Backgrind Preparation Die Separation Method: 100% Saw Die Attach Supplier: Ablestik Die Attach Material: QMI 509 Die Attach Method: Dispensing Bond Diagram Designation: 001-49708, 001-49709 Wire Bond Method: Thermosonic Wire Material/Size: Au, 0.9mil Thermal Resistance Theta JA °C/W: 95°C/W Package Cross Section Yes/No: No Assembly Process Flow: 11-21099 Name/Location of Assembly (prime) facility: CML-RA MSL Level 3 Reflow Profile 260C ELECTRICAL TEST / FINISH DESCRIPTION Test Location: Cypress Philippines (CML-R, CML-RA), KYEC-Taiwan Note: Please contact a Cypress Representative for other package availability. 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Page 4 of 10 Document No. 001-87702 Rev. *C ECN #4403815 RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENTS Stress/Test Test Condition (Temp/Bias) Result P/F High Temperature Operating Life Early Failure Rate Dynamic Operating Condition, Vcc Max=5.5V/5.25V, 125C JESD22-A108 P High Temperature Operating Life Latent Failure Rate Dynamic Operating Condition, Vcc Max=5.5V/5.25V, 125C JESD22-A108 P High Accelerated Saturation Test (HAST) JESD22-A110:130C, 5.25V, 85%RH Precondition: JESD22 Moisture Sensitivity Level 1 P (168 Hrs, 85C/85%RH, 260C Reflow) Temperature Cycle MIL-STD-883, Method 1010, Condition C, -65C to 150C Precondition: JESD22 Moisture Sensitivity Level 1 P (168 Hrs, 85C/85%RH, 260C Reflow) JESD22-A102: 121C, 100%RH, 15 Psig Precondition: JESD22 Moisture Sensitivity Level 1 Pressure Cooker P (168 Hrs, 85C/85%RH, 260C Reflow) 150C 5C No Bias, Data Retention P JESD22-A117 and JESD22-A103 High Temperature Steady State life Static Operating Condition, Vcc Max= 5.5V, 125°C P JESD22-A108 Electrostatic Discharge Human Body Model (ESD-HBM) 2,200V JESD22, Method A114 P Electrostatic Discharge Human Body Model (ESD-HBM) 2,200V MIL-STD-883, Method 3015.7 P Electrostatic Discharge Charge Device Model (ESD-CDM) 500V JESD22-C101 P Endurance Test MIL-STD-883, Method 883-1033 P Age Bond Strength 200C, 4hrs MIL-STD-883, Method 883-2011 P Low Temperature Operating Life Dynamic Operating Condition, Vcc= 5.5V, -30 C,f =8MHz P JESD22-A108 SEM Analysis MIL-STD-883, Method 883-2018-2 P Acoustic Microscopy J-STD-020 Precondition: JESD22 Moisture Sensitivity Level (168 Hrs, 85C/85%RH, 260C Reflow) P Dynamic Latch up 125C, 8.3V, 9.5V P JESD78 Static Latch up 125C, 200mA, 240mA JESD78 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 5 of 10 P Document No. 001-87702 Rev. *C ECN #4403815 RELIABILITY FAILURE RATE SUMMARY Stress/Test High Temperature Operating Life 1 Early Failure Rate 1, 2 High Temperature Operating Life Long Term Failure Rate 1 2 3 3 Device Tested/ Device Hours # Fails Activation Energy Thermal A.F Failure Rate 1,727 Devices 0 N/A N/A 0 PPM 708,750 DHRs 0 0 .7 55 23 FIT Assuming an ambient temperature of 55C and a junction temperature rise of 15C. Chi-squared 60% estimations used to calculate the failure rate. Thermal Acceleration Factor is calculated from the Arrhenius equation E 1 1 AF = exp A - k T2 T1 where: EA =The Activation Energy of the defect mechanism. -5 K = Boltzmann’s constant = 8.62x10 eV/Kelvin. T1 is the junction temperature of the device under stress and T2 is the junction temperature of the device at use conditions. Company Confidential A printed copy of this document is considered uncontrolled. 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Page 6 of 10 Document No. 001-87702 Rev. *C ECN #4403815 Reliability Test Data QTP #: 052004 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: ACOUSTIC, MSL1 CY8C21534 (8C21534A) 4516647 610521157 TAIWAN-T COMP 15 0 CY8C21234 (8C21234A) 4516674 610521849 PHIL-M COMP 15 0 CY8C21234 (8C21234A) 4517851 610522407 PHIL-M COMP 15 0 STRESS: AGE BOND STRENGTH CY8C21534 (8C21534A) 4516647 610521157 TAIWAN-T COMP 10 0 CY8C21234 (8C21234A) 4516674 610521849 PHIL-M COMP 10 0 CY8C21234 (8C21234A) 4517851 610522407 PHIL-M COMP 10 0 STRESS: DATA RETENTION, PLASTIC, 150C CY8C21534 (8C21534A) 4516647 610521157 TAIWAN-T 500 256 0 CY8C21534 (8C21534A) 4516647 610521157 TAIWAN-T 1000 256 0 CY8C21234 (8C21234A) 4516674 610521849 PHIL-M 500 256 0 CY8C21234 (8C21234A) 4516674 610521849 PHIL-M 1000 254 0 CY8C21234 (8C21234A) 4517851 610522407 PHIL-M 500 252 0 CY8C21234 (8C21234A) 4517851 610522407 PHIL-M 1000 252 0 4516647 610521157 TAIWAN-T COMP 45 0 STRESS: ENDURANCE CY8C21534 (8C21534A) STRESS: ESD-CHARGE DEVICE MODEL, (500V) CY8C21534 (8C21534A) 4516647 610521157 TAIWAN-T COMP 9 0 CY8C21534 (8C21534A) 4516674 610522255 TAIWAN-T COMP 9 0 CY8C21534 (8C21534A) 4517851 610522404 TAIWAN-T COMP 9 0 STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, (2,200V) CY8C21534 (8C21534A) 4516647 610521157 TAIWAN-T COMP 9 0 CY8C21534 (8C21534A) 4516674 610522255 TAIWAN-T COMP 9 0 CY8C21534 (8C21534A) 4517851 610522404 TAIWAN-T COMP 9 0 STRESS: ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015, (2,200V) CY8C21534 (8C21534A) 4516647 610521157 TAIWAN-T COMP 3 0 CY8C21534 (8C21534A) 4516674 610522255 TAIWAN-T COMP 3 0 CY8C21534 (8C21534A) 4517851 610522404 TAIWAN-T COMP 3 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (125C, 5.5V, Vcc Max) CY8C21534 (8C21534A) 4516647 610521157 TAIWAN-T 120 1002 0 CY8C21234 (8C21234A) 4516674 610521849 PHIL-M 120 1002 0 CY8C21234 (8C21234A) 4517851 610522407 PHIL-M 120 1002 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (125C, 5.5V, Vcc Max) CY8C21534 (8C21534A) 4516647 610521157 TAIWAN-T 750 235 0 CY8C21534 (8C21534A) 4517851 610522404 TAIWAN-T 750 235 0 CY8C21534 (8C21534A) 4516674 610522255 TAIWAN-T 750 235 0 Company Confidential A printed copy of this document is considered uncontrolled. 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Page 7 of 10 Document No. 001-87702 Rev. *C ECN #4403815 Reliability Test Data QTP #: 052004 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: HIGH TEMP STEADY STATE LIFE TEST (125C, 5.5V) CY8C21534 (8C21534A) 4516647 610521157 TAIWAN-T 168 76 0 CY8C21534 (8C21534A) 4516647 610521157 TAIWAN-T 336 76 0 STRESS: HI-ACCEL SATURATION TEST (130C, 85%RH, 5.25V), PRE COND 168 HR 85C/85%RH (MSL1) CY8C21234 (8C21234A) 4516647 610527569 PHIL-M 128 49 0 CY8C21234 (8C21234A) 4516674 610521849 PHIL-M 128 44 0 CY8C21234 (8C21234A) 4517851 610522407 PHIL-M 128 44 0 500 45 0 STRESS: LOW TEMPERATURE OPERATING LIFE (-30C, 5.5V) CY8C21534 (8C21534A) 4516647 610521157 TAIWAN-T STRESS: PRESSURE COOKER TEST (121C, 100%RH), 15 Psig, PRE COND 168 HR 85C/85%RH (MSL1) CY8C21534 (8C21534A) 4516647 610521157 TAIWAN-T 168 45 0 CY8C21534 (8C21534A) 4516647 610521157 CY8C21234 (8C21234A) 4516674 610521849 TAIWAN-T 336 45 0 PHIL-M 168 45 0 CY8C21234 (8C21234A) 4516674 CY8C21234 (8C21234A) 4517851 610521849 PHIL-M 336 45 0 610522407 PHIL-M 168 45 0 CY8C21234 (8C21234A) 4517851 610522407 PHIL-M 336 45 0 STRESS: STATIC LATCH-UP TESTING (125C, 11V, 300mA) CY8C21534 (8C21534A) 4516647 610521157 TAIWAN-T COMP 3 0 CY8C21534 (8C21534A) 4516674 610522255 TAIWAN-T COMP 3 0 CY8C21534 (8C21534A) 4517851 610522404 TAIWAN-T COMP 3 0 610521157 TAIWAN-T COMP 3 0 STRESS: DYNAMIC LATCH-UP (8.3V) CY8C21534 (8C21534A) 4516647 STRESS: TC COND. C -65C TO 150C, PRE COND 168 HRS 85C/85%RH (MSL1) CY8C21534 (8C21534A) 4516647 610521157 TAIWAN-T 300 50 0 CY8C21534 (8C21534A) 4516647 610521157 TAIWAN-T 500 50 0 CY8C21534 (8C21534A) 4516647 610521157 TAIWAN-T 1000 50 0 CY8C21234 (8C21234A) 4516674 610521849 PHIL-M 300 45 0 CY8C21234 (8C21234A) 4516674 610521849 PHIL-M 1000 45 0 CY8C21234 (8C21234A) 4517851 610522407 PHIL-M 300 45 0 CY8C21234 (8C21234A) 4517851 610522407 PHIL-M 1000 44 0 3 0 STRESS: STATIC LATCH-UP TESTING (125C, 11V, 300mA) CY8C21534 (8C21534A) 4516647 610521157 TAIWAN-T COMP Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 8 of 10 Document No. 001-87702 Rev. *C ECN #4403815 Reliability Test Data QTP #: 093003 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: DYNAMIC LATCH-UP (125C, 9.5V, Vcc Max) CY8C28623 (8C28623AC) 4929836 610930197 PHIL-MB COMP 2 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (125C, 5.25V, Vcc Max) CY8C28433 (8C28433AC) 4929836 610930316 CML-RA 96 573 0 CY8C28433 (8C28433AC) 4929836 610930317 CML-RA 96 588 0 CY8C28433 (8C28433AC) 4929836 610930318 CML-RA 96 566 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (125C, 5.25V, Vcc Max) CY8C28433 (8C28433AC) 4929836 610930316 CML-RA 168 60 0 CY8C28433 (8C28433AC) 4929836 610930316 CML-RA 1000 60 0 CY8C28433 (8C28433AC) 4929836 610930317 CML-RA 168 60 0 CY8C28433 (8C28433AC) 4929836 610930317 CML-RA 1000 60 0 CY8C28433 (8C28433AC) 4929836 610930318 CML-RA 168 60 0 CY8C28433 (8C28433AC) 4929836 610930318 CML-RA 1000 60 0 CML-RA 168 77 0 CML-RA COMP 9 0 STRESS: ENDURANCE DATA RETENTION CY8C28433 (8C28433AC) 4929836 610930316 STRESS: ESD-CHARGE DEVICE MODEL, (500V) CY8C28623-( 8C28623AC) 4929836 STRESS: 610930197 ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015 (1,100V) CY8C28623-( 8C28623AC) 4929836 610930197 CML-RA COMP 3 0 CML-RA COMP 6 0 CML-RA COMP 3 0 STRESS: STATIC LATCH-UP TESTING (125C, 200mA) CY8C28623-( 8C28623AC) 4929836 610930197 STRESS: STATIC LATCH-UP TESTING (125C, 240mA) CY8C28623-( 8C28623AC) 4929836 610930197 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 9 of 10 Document No. 001-87702 Rev. *C ECN #4403815 Document History Page Document Title: Document Number: QTP 093003: PSOC EMERALD DEVICE FAMILY, S4AD, FAB4 001-87702 Rev. ECN Orig. of No. Change ** 4009835 NSR *A *B *C 4074126 ILZ 4084815 ZIJ 4403815 JYF Description of Change Initial Spec Release. Revision from Version 1.0 report in memo NSR-245. - Remove VERSION 1.0in the title page. - Updated the Cypress Technical Contact. - Replaced CML-R facitilies with JCET-CHINA and added ASETAIWAN (G), CML-RA for 48 QFN package in Assembly site facility. - Added CML-RA and KYEC in test location. - Removed the reference Cypress specs in reliability tests performed table and replaced with reference Industry standards. - Added QTP#093003 1000H LFR data and recalculated the LFR FIT rate. Added ESD-CDM & ESD-HBM data on QTP 093003 Added Static LU data to QTP 093003 Updated device division from CCD to PSD; Corrected data of Metal Composition in Technology/Fab Process Description table. Updated QTP title page and Reliability Tests Performed table (EFR/LFR, HAST,TCT, PCT, HTSSL, LTOL, Acoustic, Dynamic Latch-up) for template alignment. Distribution: WEB Posting: None Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 10 of 10