Variable Capacitance Diodes MA2Z393 N type GaAs epitaxial planar type Unit : mm For VCO of a communications equipment INDICATES CATHODE 0.4 ± 0.15 1.7 ± 0.1 ■ Absolute Maximum Ratings Ta = 25°C 1.25 ± 0.1 2.5 ± 0.2 Unit VR 10 V Forward current (DC) IF 50 mA Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C + 0.1 Reverse voltage (DC) 0.16 − 0.06 Rating 0 to 0.05 Symbol 0.9 ± 0.1 Parameter 2 + 0.1 1 • Small series resistance rD and high Q value • Large capacitance ratio during low-voltage operation 0.3 − 0.05 ■ Features 0.4 ± 0.15 1 : Anode 2 : Cathode S-Mini Type Package (2-pin) Marking Symbol: 7P ■ Electrical Characteristics Ta = 25°C Parameter Symbol Conditions Min Typ Max Unit Reverse current (DC) IR VR = 6 V 50 nA Forward voltage (DC) VF IF = 500 mA 0.8 V VR Reverse voltage (DC) Diode capacitance Series resistance* IR = 1 µA 10 CD(1V) VR = 1 V, f = 1 MHz 8 10.5 13 pF CD(4V) VR = 4 V, f = 1 MHz 2.1 3.6 5.1 pF 0.3 0.4 Ω rD CD = 4.5 pF, f = 470 MHz V Note) 1．Rated input/output frequency: 470 MHz 2．* : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER 1 MA2Z393 Variable Capacitance Diodes IF V F 120 CD VR IR V R 100 Ta = 25°C 12 Ta = 25°C f = 1 MHz Ta = 25°C 10 80 60 40 Diode capacitance CD (pF) Reverse current IR (nA) Forward current IF (mA) 100 10 1 0.1 0 0.2 0.4 0.6 0.8 1.0 Forward voltage VF (V) 2 6 4 2 20 0 8 1.2 0.01 0 2 4 6 8 Reverse voltage VR (V) 10 0 0.1 1 10 Reverse voltage VR (V) 100