TCMT11.. Series Vishay Semiconductors Optocoupler with Phototransistor Output Description The TCMT11.. Series consist of a phototransistor optically coupled to a gallium arsenide infraredemitting diode in an 4- lead up to 16- lead plastic Miniflat package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements. 16467 Applications Programmable logic controllers, modems, answering machines, general applications Coll. Emitter 9 D Low profile package (half pitch) D AC Isolation test voltage Vio = 3.75 kVRMS D Low coupling capacitance of typical 0.3 pF D Current Transfer Ratio (CTR) selected into groups D Low temperature coefficient of CTR D Wide ambient temperature range D Underwriters Laboratory (UL) 1577 recognized, 16281 Features 1 2 8 Anode Cath. 4 PIN 16 PIN file number E-76222 D CSA (C-UL) 1577 recognized file number E- 76222 - Double Protection C D Coupling System M Order Instruction Ordering Code TCMT1100 TCMT1101 TCMT1102 TCMT1103 TCMT1104 TCMT1105 TCMT1106 TCMT1107 TCMT1108 TCMT1109 TCMT4100 Document Number 83510 Rev. A2, 15–Dec–00 CTR Ranking 50 to 600% 40 to 80% 63 to 125% 100 to 200% 160 to 320% 50 to 150% 100 to 300% 80 to 160% 130 to 260% 200 to 400% 50 to 600% Remarks 4 Pin = Single channel 4 Pin = Single channel 4 Pin = Single channel 4 Pin = Single channel 4 Pin = Single channel 4 Pin = Single channel 4 Pin = Single channel 4 Pin = Single channel 4 Pin = Single channel 4 Pin = Single channel 16 Pin = Quad channel www.vishay.com 1 (12) TCMT11.. Series Vishay Semiconductors Absolute Maximum Ratings Input (Emitter) Parameter Reverse voltage Forward current Forward surge current Power dissipation Junction temperature Test Conditions tp ≤ 10 ms Tamb ≤ 25°C Symbol VR IF IFSM PV Tj Value 6 60 1.5 100 125 Unit V mA A mW °C Symbol VCEO VECO IC ICM PV Tj Value 70 7 50 100 150 125 Unit V V mA mA mW °C Symbol VIO 1) Ptot Tamb Value 3.75 250 –40 to +100 Unit kV mW °C Tstg Tsd –40 to +100 235 °C °C Output (Detector) Parameter Collector emitter voltage Emitter collector voltage Collector current Peak collector current Power dissipation Junction temperature Test Conditions tp/T = 0.5, tp ≤ 10 ms Tamb ≤ 25°C Coupler Parameter Test Conditions AC isolation test voltage (RMS) Total power dissipation Tamb ≤ 25°C Operating ambient temperature range Storage temperature range Soldering temperature 1) Related to standard climate 23/50 DIN 50014 www.vishay.com 2 (12) Document Number 83510 Rev. A2, 15–Dec–00 TCMT11.. Series Vishay Semiconductors Electrical Characteristics (Tamb = 25°C) Input (Emitter) Parameter Forward voltage Junction capacitance Test Conditions IF = 50 mA VR = 0 V, f = 1 MHz Symbol VF Cj Min. Typ. 1.25 50 Max. 1.6 Unit V pF Test Conditions IC = 100 mA IE = 100 mA VCE = 20 V, IF = 0, E = 0 Symbol VCEO VECO ICEO Min. 70 7 Typ. Max. 100 Unit V V nA Test Conditions IF = 10 mA, IC = 1 mA Symbol VCEsat Min. Max. 0.3 Unit V IF = 10 mA, VCE = 5 V, RL = 100 f = 1 MHz fc 100 kHz Ck 0.3 pF Output (Detector) Parameter Collector emitter voltage Emitter collector voltage Collector dark current Coupler Parameter Collector emitter saturation voltage Cut-off frequency Coupling capacitance W Typ. Current Transfer Ratio (CTR) Parameter IC/IF Test Conditions VCE = 5 V, IF = 5 mA VCE = 5 V, IF = 10 mA VCE = 5 V, IF = 10 mA VCE = 5 V, IF = 10 mA VCE = 5 V, IF = 10 mA VCE = 5 V, IF = 5 mA VCE = 5 V, IF = 5 mA VCE = 5 V, IF = 5 mA VCE = 5 V, IF = 5 mA VCE = 5 V, IF = 5 mA VCE = 5 V, IF = 5 mA Document Number 83510 Rev. A2, 15–Dec–00 Type TCMT1100 TCMT1101 TCMT1102 TCMT1103 TCMT1104 TCMT1105 TCMT1106 TCMT1107 TCMT1108 TCMT1109 TCMT4100 Symbol CTR CTR CTR CTR CTR CTR CTR CTR CTR CTR CTR Min. 0.5 0.4 0.63 1.0 1.6 0.5 1.0 0.8 1.3 2.0 0.5 Typ. Max. 6.0 0.8 1.25 2.0 3.2 1.5 3.0 1.6 2.6 4.0 6.0 Unit www.vishay.com 3 (12) TCMT11.. Series Vishay Semiconductors Switching Characteristics Parameter Delay time Rise time Fall time Storage time Turn-on time Turn-off time Turn-on time Turn-off time IF 0 Test Conditions VS = 5 V, IC = 2 mA, RL = 100 ((see figure g 1)) Symbol td tr tf ts ton toff ton toff W VS = 5 V, IF = 10 mA, RL = 1 k W ((see figure g 2)) Typ. 3.0 3.0 4.7 0.3 6.0 5.0 9.0 18.0 +5V IF W IF 0 t tp m m m m m m m m m 96 11698 IC = 2 mA; adjusted through input amplitude RG = 50 tp = 0.01 T tp = 50 s Unit s s s s s s s s IC Channel I Oscilloscope 50 W 100 Channel II W RL = 1 M W 100% 90% CL = 20 pF 95 10804 Figure 1. Test circuit, non-saturated operation 10% 0 t tr ts td 0 IF +5V IF = 10 mA ton IC W tp td tr ton (= td + tr) RG = 50 tp = 0.01 T tp = 50 s m tf toff pulse duration delay time rise time turn-on time ts tf toff (= ts + tf) storage time fall time turn-off time Figure 3. Switching times Channel I 50 W 1k W Channel II Oscilloscope RL > 1 M W CL < 20 pF 95 10843 Figure 2. Test circuit, saturated operation www.vishay.com 4 (12) Document Number 83510 Rev. A2, 15–Dec–00 TCMT11.. Series Vishay Semiconductors Typical Characteristics (Tamb = 25_C, unless otherwise specified) 10000 Coupled device ICEO– Collector Dark Current, with open Base ( nA ) P tot – Total Power Dissipation ( mW ) 300 250 200 Phototransistor 150 IR-diode 100 50 VCE=20V IF=0 1000 100 10 0 1 0 40 80 120 Tamb – Ambient Temperature ( °C ) 96 11700 0 Figure 4. Total Power Dissipation vs. Ambient Temperature IC – Collector Current ( mA ) I F – Forward Current ( mA ) 100 75 100 100.0 10.0 1.0 0.1 VCE=5V 10 1 0.1 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VF – Forward Voltage ( V ) 96 11862 0.1 100 10 Figure 8. Collector Current vs. Forward Current 2.0 100 20mA IC – Collector Current ( mA ) VCE=5V IF=5mA 1.5 1.0 0.5 0 –25 1 IF – Forward Current ( mA ) 95 11027 Figure 5. Forward Current vs. Forward Voltage CTR rel – Relative Current Transfer Ratio 50 Figure 7. Collector Dark Current vs. Ambient Temperature 1000.0 95 11025 25 Tamb – Ambient Temperature ( °C ) 95 11026 IF=50mA 10mA 10 5mA 2mA 1 1mA 0.1 0 25 50 75 Tamb – Ambient Temperature ( °C ) Figure 6. Relative Current Transfer Ratio vs. Ambient Temperature Document Number 83510 Rev. A2, 15–Dec–00 0.1 95 10985 1 100 10 VCE – Collector Emitter Voltage ( V ) Figure 9. Collector Current vs. Collector Emitter Voltage www.vishay.com 5 (12) TCMT11.. Series 1.0 t on / t off – Turn on / Turn off Time ( m s ) VCEsat – Collector Emitter Saturation Voltage ( V ) Vishay Semiconductors 20% 0.8 CTR=50% 0.6 0.4 0.2 10% 0 Saturated Operation VS=5V RL=1k 40 W 30 toff 20 10 ton 0 1 100 10 0 IC – Collector Current ( mA ) 95 11028 5 10 15 20 IF – Forward Current ( mA ) 95 11031 Figure 10. Collector Emitter Saturation Voltage vs. Collector Current Figure 12. Turn on / off Time vs. Forward Current 10 Non Saturated Operation VS=5V RL=100 m t on / t off – Turn on / Turn off Time ( s ) 1000 CTR – Current Transfer Ratio ( % ) 50 VCE=5V 100 10 1 8 W ton 6 toff 4 2 0 0.1 95 11029 1 100 10 0 IF – Forward Current ( mA ) Pin 1 Indication 4 6 10 IC – Collector Current ( mA ) 95 11030 Figure 11. Current Transfer Ratio vs. Forward Current 2 Figure 13. Turn on / off Time vs. Collector Current Type System Letter T1100M 901TK27 15230 Date Code (YM) Company Logo Production Location Figure 14. Marking example www.vishay.com 6 (12) Document Number 83510 Rev. A2, 15–Dec–00 TCMT11.. Series Vishay Semiconductors Dimensions of TCMT1... in mm 16283 Document Number 83510 Rev. A2, 15–Dec–00 www.vishay.com 7 (12) TCMT11.. Series Vishay Semiconductors Dimensions of TCMT4... in mm 15226 www.vishay.com 8 (12) Document Number 83510 Rev. A2, 15–Dec–00 TCMT11.. Series Vishay Semiconductors Dimensions of Reel in mm A N W1 Reel Hub W2 Version G Tape Width 16 A 330 ± 1 16515 N 100 ± 1.5 W1 16.4 + 2 W2 max 22.4 Dimensions of Leader and Trailer in mm Trailer no devices Leader devices no devices End Start min. 200 min. 400 96 11818 Document Number 83510 Rev. A2, 15–Dec–00 www.vishay.com 9 (12) TCMT11.. Series Vishay Semiconductors Dimensions of Tape in mm 16511 www.vishay.com 10 (12) Document Number 83510 Rev. A2, 15–Dec–00 TCMT11.. Series Vishay Semiconductors Dimensions of Tape in mm 16510 Document Number 83510 Rev. A2, 15–Dec–00 www.vishay.com 11 (12) TCMT11.. Series Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 www.vishay.com 12 (12) Document Number 83510 Rev. A2, 15–Dec–00