TCST1030(L) Vishay Semiconductors Transmissive Optical Sensor with Phototransistor Output Description This device has a compact construction where the emitting-light sources and the detectors are located face-to-face on the same optical axis. The operating wavelength is 950 nm. The detector consists of a phototransistor. Applications D Position sensor for shaft encoder D Detection of opaque material such as paper, IBM cards, magnetic tapes etc. 95 10529 D Limit switch for mechanical motions in VCR D General purpose – wherever the space is limited D End of tape, begin of tape in streamer Features D Gap 3 mm D Package height: 8 mm D Plastic polycarbonate housing D Ambient light protected D L = long leads D Current Transfer Ratio (CTR) of typical 25% A E C C 96 11970 Order Instruction Ordering Code TCST1030 TCST1030(L) Document Number 83763 Rev. A4, 17–Jul–00 Resolution (mm) / Aperture (mm) / non / non Remarks High density packing leads (3.4 mm) High density packing long leads (16.2 mm) www.vishay.com 1 (8) TCST1030(L) Vishay Semiconductors Absolute Maximum Ratings Input (Emitter) Parameter Reverse voltage Forward current Forward surge current Power dissipation Junction temperature Test Conditions tp ≤ 10 ms Tamb ≤ 25°C Symbol VR IF IFSM PV Tj Value 6 60 3 100 100 Unit V mA A mW °C Symbol VCEO VECO IC PV Tj Value 70 7 100 150 100 Unit V V mA mW °C Symbol Ptot Tamb Tstg Tsd Value 250 –25 to +85 –25 to +100 260 Unit mW °C °C °C Output (Detector) Parameter Collector emitter voltage Emitter collector voltage Collector current Power dissipation Junction temperature Test Conditions Tamb ≤ 25°C Coupler Parameter Total power dissipation Operation temperature range Storage temperature range Soldering temperature Test Conditions Tamb ≤ 25°C 1.6 mm from case, t ≤ 10 s Electrical Characteristics (Tamb = 25°C) Input (Emitter) Parameter Forward voltage Junction capacitance Test Conditions IF = 60 mA VR = 0, f = 1 MHz Symbol VF Cj Min. Typ. 1.25 50 Max. 1.5 Unit V pF Test Conditions IC = 1 mA IE = 10 mA VCE = 25 V, IF = 0, E = 0 Symbol VCEO VECO ICEO Min. 70 7 Typ. Max. 10 100 Unit V V nA Test Conditions VCE = 5 V, IF = 10 mA IF = 10 mA, IC = 1 mA Symbol IC VCEsat Min. 1.2 Typ. 2.4 Max. Output (Detector) Parameter Collector emitter voltage Emitter collector voltage Collector dark current Coupler Parameter Collector current Collector emitter saturation voltage www.vishay.com 2 (8) 0.8 Unit mA V Document Number 83763 Rev. A4, 17–Jul–00 TCST1030(L) Vishay Semiconductors Switching Characteristics Parameter Turn-on time Turn-off time 0 IF Test Conditions IC = 1 mA, VCE = 5 V, RL = 100 W (see figure 1) Symbol ton foff Typ. 15.0 10.0 +5V IF 96 11698 IC = 2 mA; adjusted through input amplitude RG = 50 W tp = 0.01 T tp = 50 ms Unit ms ms IF 0 t tp IC Channel I 50 W 100 W Channel II Oscilloscope RL 1 MW y CL x 20 pF 100% 90% 95 10890 Figure 1. Test circuit 10% 0 t tr ts td ton tp td tr ton (= td + tr) tf toff pulse duration delay time rise time turn-on time ts tf toff (= ts + tf) storage time fall time turn-off time Figure 2. Switching times Document Number 83763 Rev. A4, 17–Jul–00 www.vishay.com 3 (8) TCST1030(L) Vishay Semiconductors Typical Characteristics (Tamb = 25_C, unless otherwise specified) 10000 ICEO– Collector Dark Current, with open Base ( nA ) P tot – Total Power Dissipation ( mW ) 400 300 Coupled device 200 Phototransistor IR-diode 100 VCE=25V IF=0 1000 100 10 0 1 0 30 60 90 120 150 Tamb – Ambient Temperature ( °C ) 95 11088 Figure 3. Total Power Dissipation vs. Ambient Temperature 0 95 11090 25 50 100 75 Tamb – Ambient Temperature ( °C ) Figure 6. Collector Dark Current vs. Ambient Temperature 1000.0 10.00 IC – Collector Current ( mA ) I F – Forward Current ( mA ) VCE=10V 100.0 10.0 1.0 0.1 0 VF – Forward Voltage ( V ) 96 11768 1.2 1.1 1.0 10.0 100.0 IF – Forward Current ( mA ) Figure 7. Collector Current vs. Forward Current 10.00 VCE=5V IF=20mA 1.0 0.9 0.8 0.7 0.6 –30–20–10 0 10 20 30 40 50 60 70 80 90 100 96 11767 Tamb – Ambient Temperature ( °C ) Figure 5. Relative Current Transfer Ratio vs. Ambient Temperature www.vishay.com 4 (8) IC – Collector Current ( mA ) CTR rel – Relative Current Transfer Ratio Figure 4. Forward Current vs. Forward Voltage 0.10 0.01 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 96 11862 1.00 IF=20mA 10mA 1.00 5mA 2mA 1mA 0.10 0.01 0.1 96 11769 1.0 10.0 100.0 VCE – Collector Emitter Voltage ( V ) Figure 8. Collector Current vs. Collector Emitter Voltage Document Number 83763 Rev. A4, 17–Jul–00 TCST1030(L) Vishay Semiconductors 130 VCE=5V I Crel – Relative Collector Current CTR – Current Transfer Ratio ( % ) 100 10 1 0.1 s 90 70 50 30 10 1.0 10.0 100.0 IF – Forward Current ( mA ) 96 11770 0.4 95 11087 Figure 9. Current Transfer Ratio vs. Forward Current t on / t off – Turn on / Turn off Time ( m s ) 0 110 0.2 0 0.2 0.4 s – Displacement ( mm ) Figure 11. Relative Collector Current vs. Displacement 20 Non Saturated Operation VS=5V RL=100W 15 10 ton 5 toff 0 0 95 11086 2 4 6 8 10 IC – Collector Current ( mA ) Figure 10. Turn on / off Time vs. Collector Current Document Number 83763 Rev. A4, 17–Jul–00 www.vishay.com 5 (8) TCST1030(L) Vishay Semiconductors Dimensions of TCST1030 in mm 96 12074 www.vishay.com 6 (8) Document Number 83763 Rev. A4, 17–Jul–00 TCST1030(L) Vishay Semiconductors Dimensions of TCST1030L in mm 95 11268 Document Number 83763 Rev. A4, 17–Jul–00 www.vishay.com 7 (8) TCST1030(L) Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 www.vishay.com 8 (8) Document Number 83763 Rev. A4, 17–Jul–00